公开(公告)号：US5619050A

公开(公告)日：1997-04-08

申请号：US399345

申请日：1995-03-06

申请人： Hirofumi Uenoyama ,  Kenichi Ao ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Yukihiro Takeuchi

发明人： Hirofumi Uenoyama ,  Kenichi Ao ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Yukihiro Takeuchi

IPC分类号： G01P15/125 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82

CPC分类号： G01P15/0802 ,  G01P15/12 ,  Y10S73/01

摘要： A semiconductor acceleration sensor capable of reducing a leakage current and manufacturing method thereof is disclosed. A beam structure is disposed on a silicon substrate. The beam structure has a movable section, and the movable section is disposed spaced at a prescribed distance above silicon substrate. A movable electrode section is formed in one portion of movable section. Fixed electrodes made of an impurity diffusion layer are formed in silicon substrate to correspond to both sides of a movable electrode section. A peripheral circuit is formed in silicon substrate. The beam structure and the peripheral circuit are electrically connected by an electroconductive thin film, made of polysilicon. Then, when a voltage is applied to the beam structure, and a voltage is applied to both fixed electrodes, an inversion layer is formed, and an electrical current flows between the fixed electrodes. In the case where an acceleration is received and movable section is displaced, the electrical current flowing between the fixed electrodes changes.

摘要翻译： 公开了能够减小漏电流的半导体加速度传感器及其制造方法。 梁结构设置在硅衬底上。 梁结构具有可移动部分，并且可移动部分设置在硅基板上方规定距离处。 可动电极部分形成在可动部分的一部分中。 在硅衬底中形成由杂质扩散层制成的固定电极，以对应于可动电极部分的两侧。 在硅衬底中形成外围电路。 光束结构和外围电路通过由多晶硅制成的导电薄膜电连接。 然后，当向梁结构施加电压并且向两个固定电极施加电压时，形成反型层，并且电流在固定电极之间流动。 在接收到加速度并且可移动部分移位的情况下，在固定电极之间流动的电流改变。

公开(公告)号：US07582489B2

公开(公告)日：2009-09-01

申请号：US12068988

申请日：2008-02-14

申请人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

发明人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

IPC分类号： H01L21/00 ,  G01B7/30

CPC分类号： H01L27/22 ,  G01P3/487 ,  G01R33/02 ,  Y10T428/1193

摘要： A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

摘要翻译： 磁传感器装置包括半导体衬底和用于检测磁场的磁阻抗装置。 磁阻抗装置设置在基板上。 磁传感器装置具有最小尺寸并且制造成本低。 这里，磁阻抗装置以这样的方式检测磁场，使得当将交流电流施加到装置并且通过外部电路测量阻抗时，根据磁场改变装置的阻抗。

公开(公告)号：US20080145956A1

公开(公告)日：2008-06-19

申请号：US12068988

申请日：2008-02-14

申请人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

发明人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

IPC分类号： H01L21/00

CPC分类号： H01L27/22 ,  G01P3/487 ,  G01R33/02 ,  Y10T428/1193

摘要： A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

摘要翻译： 磁传感器装置包括半导体衬底和用于检测磁场的磁阻抗装置。 磁阻抗装置设置在基板上。 磁传感器装置具有最小尺寸并且制造成本低。 这里，磁阻抗装置以这样的方式检测磁场，使得当将交流电流施加到装置并且通过外部电路测量阻抗时，根据磁场改变装置的阻抗。

公开(公告)号：US20050156309A1

公开(公告)日：2005-07-21

申请号：US11075881

申请日：2005-03-10

申请人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

发明人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Kenichi Ao

IPC分类号： B81C1/00 ,  H01L21/301 ,  H01L21/68 ,  H01L21/48

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

摘要翻译： 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

公开(公告)号：US06753201B2

公开(公告)日：2004-06-22

申请号：US10154784

申请日：2002-05-28

申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

IPC分类号： H01L2100

CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

公开(公告)号：US06448624B1

公开(公告)日：2002-09-10

申请号：US08908939

申请日：1997-08-08

申请人： Seiichiro Ishio ,  Kenichi Ao ,  Minoru Murata ,  Yasuki Shimoyama ,  Tomohito Kunda ,  Norio Kitao

发明人： Seiichiro Ishio ,  Kenichi Ao ,  Minoru Murata ,  Yasuki Shimoyama ,  Tomohito Kunda ,  Norio Kitao

IPC分类号： H01L2982

CPC分类号： G01P15/123 ,  G01P1/006 ,  G01P15/0802 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor sensor chip is provided with a weight portion supported in a frame via beams whereby acceleration up to substantially ±1 G can be detected by utilizing piezoresistance effect of resistor elements formed on the beams. The semiconductor sensor chip is supported by a seat having a thermal expansion coefficient equivalent to that of the semiconductor sensor chip via the frame. The frame and the seat are adhered to each other by a flexible adhesive agent mixed with a plurality of resin beads functioning as spacers and under an adhesion state, air damping of the weight portion is carried out by setting a dimension of an air gap between the weight portion and the seat to a range of 7 through 15 &mgr;m.

摘要翻译： 半导体传感器芯片具有通过光束支撑在框架中的重量部分，由此通过利用形成在梁上的电阻元件的压阻效应可以检测到大致±1G的加速度。 半导体传感器芯片由具有与半导体传感器芯片的热膨胀系数相当的热膨胀系数经由框架支撑。 框架和座椅通过与作为间隔件起作用的多个树脂珠混合的柔性粘合剂彼此粘合，并且在粘合状态下，通过将重量部分的空气阻力设定在 重量部分和座椅到7到15毫米的范围。

公开(公告)号：US06270685B1

公开(公告)日：2001-08-07

申请号：US09436358

申请日：1999-11-09

申请人： Seiichiro Ishio ,  Kenichi Ao

发明人： Seiichiro Ishio ,  Kenichi Ao

IPC分类号： C23F100

CPC分类号： B81C1/0042 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/084 ,  H01L21/0334

摘要： In a method for producing a semiconductor dynamic sensor, an anisotropic etching mask is formed on a (100) crystal orientation silicon substrate with a main portion and form-compensation portions formed at the corners of the main portion. Each of the form-compensation portions has a rectangular shape with a long side and a short side. Further, one of the long and short sides of the etching mask stretches in the direction of the silicon substrate, and the other side stretches in the direction of the silicon substrate. As a result, the silicon substrate can be etched into a predetermined shape without making large corner-undercut portions on a nonetched portion corresponding to the main portion of the mask.

摘要翻译： 在制造半导体动态传感器的方法中，在主要部分的（100）晶体取向硅衬底上形成各向异性蚀刻掩模，并且形成在主要部分的角部处的形状补偿部分。 每个形状补偿部分具有长边和短边的矩形形状。 此外，蚀刻掩模的长边和短边之一在硅衬底的<011>方向上延伸，另一侧在硅衬底的<0（超芯（1）} 1>方向上延伸。 结果，可以将硅衬底蚀刻成预定形状，而不会在对应于掩模的主要部分的非蚀刻部分上形成大的拐角切口部分。

公开(公告)号：US6143584A

公开(公告)日：2000-11-07

申请号：US121893

申请日：1998-07-24

申请人： Tsuyoshi Fukada ,  Masakazu Kanosue ,  Kenichi Ao ,  Minoru Murata ,  Seiichiro Ishio

发明人： Tsuyoshi Fukada ,  Masakazu Kanosue ,  Kenichi Ao ,  Minoru Murata ,  Seiichiro Ishio

IPC分类号： G01P15/12 ,  H01L21/00

CPC分类号： G01P15/123 ,  G01P15/124

摘要： A semiconductor sensor has gauge resistors. The gauge resistors connect with aluminum electrodes through contact holes, and form a bridge circuit. The gauge resistors are formed on each chip area of a semiconductor substrate before dicing the chip areas. Then, the resistances of the gauge resistors or the output of the bridge circuit are measured. Contact positions of the gauge resistors or the size and/or shape of the contact holes are adjusted based on the result of the measurement in order to adjust the offset voltage of the bridge circuit formed on each chip area.

摘要翻译： 半导体传感器具有量规电阻。 量规电阻器通过接触孔与铝电极连接，形成桥接电路。 在切割芯片区域之前，在半导体衬底的每个芯片区域上形成量规电阻器。 然后，测量电阻的电阻或桥接电路的输出。 基于测量结果调整量规电阻器的接触位置或接触孔的尺寸和/或形状，以调整在每个芯片区域上形成的桥接电路的偏移电压。

公开(公告)号：US5828116A

公开(公告)日：1998-10-27

申请号：US786764

申请日：1997-01-21

申请人： Kenichi Ao

发明人： Kenichi Ao

IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L21/60 ,  H01L21/607 ,  H01L29/82

CPC分类号： H01L24/85 ,  G01P15/0802 ,  G01P15/123 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05644 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48455 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/49171 ,  H01L2224/49173 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2224/78318 ,  H01L2224/85148 ,  H01L2224/85203 ,  H01L2224/85206 ,  H01L24/45 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10158 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15787

摘要： The present invention provides an improved method of wire-bonding on a semiconductor chip, especially a small acceleration sensor chip which is mounted on a substrate with an adhesive having low stress characteristics such as a silicon resin. Further, the present invention provides a semiconductor device having a structure in which the improved method of wire bonding is easily applicable. The wire-bonding is performed by giving ultrasonic vibrations to the wires and the pads on which the wires are bonded while imposing pressure thereon. The vibration is given in a direction along a radial line extending from the center of the semiconductor chip.

摘要翻译： 本发明提供了一种在半导体芯片上的引线接合的改进方法，特别是使用诸如硅树脂的具有低应力特性的粘合剂安装在基板上的小型加速度传感器芯片。 此外，本发明提供一种半导体器件，其具有可以容易地应用改进的引线接合方法的结构。 通过对电线和其上焊接有电线的焊盘施加超声波振动，同时施加压力来进行引线接合。 沿着从半导体芯片的中心延伸的径向线的方向给出振动。