公开(公告)号：US20110271758A1

公开(公告)日：2011-11-10

申请号：US13093328

申请日：2011-04-25

申请人： Minekazu SAKAI ,  Kenichi Ao

发明人： Minekazu SAKAI ,  Kenichi Ao

IPC分类号： G01C19/56

CPC分类号： G01C19/5747

摘要： In an angular velocity sensor, a beam portion couples a pair of vibrators with each other and couples each of the vibrators to a substrate to enable the pair of vibrators to be movable in a first direction and a second direction that are perpendicular to each other. The driving portion vibrates the pair of vibrators in opposite phases in the first direction. The detecting portion detects displacement of the pair of vibrators in the second direction as a change in capacitance. The detecting portion includes first and second detecting electrodes. The restricting portion restricts displacement of the pair of vibrators in the second direction based on the change in capacitance. The restricting portion includes first and second restricting electrodes, and an electrode interval between the restricting electrodes is twice a width of the detecting electrodes in the second direction.

摘要翻译： 在角速度传感器中，梁部分将一对振动器彼此连接并将每个振动器耦合到基板，以使得一对振动器能够在彼此垂直的第一方向和第二方向上移动。 驱动部分在第一方向上以相反的相位振动一对振动器。 检测部分检测一对振动器在第二方向上的位移，作为电容的变化。 检测部分包括第一和第二检测电极。 限制部分基于电容的变化来限制一对振动器在第二方向上的位移。 限制部分包括第一和第二限制电极，并且限制电极之间的电极间隔是第二方向上检测电极宽度的两倍。

公开(公告)号：US06906394B2

公开(公告)日：2005-06-14

申请号：US10448277

申请日：2003-05-30

申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

IPC分类号： G01P15/125 ,  B81B3/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/762 ,  H01L29/84 ,  H01L27/01

CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

公开(公告)号：US06429506B1

公开(公告)日：2002-08-06

申请号：US09525514

申请日：2000-03-15

申请人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Hiroshi Muto ,  Kenichi Ao ,  Shinji Yoshihara ,  Sumitomo Inomata

发明人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Hiroshi Muto ,  Kenichi Ao ,  Shinji Yoshihara ,  Sumitomo Inomata

IPC分类号： H01L21301

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

摘要翻译： 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

公开(公告)号：US5998234A

公开(公告)日：1999-12-07

申请号：US825456

申请日：1997-03-28

申请人： Minoru Murata ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Seiichiro Ishiou

发明人： Minoru Murata ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Seiichiro Ishiou

IPC分类号： G01P15/12 ,  H01L21/301 ,  H01L21/78 ,  H01L29/06 ,  H01L29/84 ,  H01L21/00 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/78 ,  H01L2224/16 ,  H01L29/0657 ,  H01L2924/01019 ,  H01L2924/10158 ,  H01L2924/10253

摘要： On a back face of a silicon wafer before dicing, tapered grooves having sloped side walls are formed by anisotropic etching along with thin portions. Strain gauges are formed on each thin portion, thereby forming a sensor chip on the silicon wafer. The back face of the silicon wafer is attached to a self-adhesive seat. Thereafter, the silicon wafer is cut along the grooves by a dicing blade to divide it into each sensor chip. In dicing, the side faces of the dicing blade cut the sloped side walls of the tapered grooves. As a result, the silicon wafer is diced into individual sensor chip having no cracks and chippings.

摘要翻译： 在切割之前的硅晶片的背面上，具有倾斜侧壁的锥形槽通过各向异性蚀刻以及薄的部分形成。 应变计形成在每个薄部分上，从而在硅晶片上形成传感器芯片。 硅晶片的背面安装在自粘座上。 此后，通过切割刀片沿着沟槽切割硅晶片，以将其划分成每个传感器芯片。 在切割中，切割刀片的侧面切割锥形槽的倾斜侧壁。 结果，将硅晶片切割成没有裂纹和碎屑的单独的传感器芯片。

公开(公告)号：US5656936A

公开(公告)日：1997-08-12

申请号：US588329

申请日：1996-01-18

申请人： Kenichi Ao ,  Yoshimi Yoshino ,  Yasuaki Makino ,  Seiki Aoyama

发明人： Kenichi Ao ,  Yoshimi Yoshino ,  Yasuaki Makino ,  Seiki Aoyama

IPC分类号： G01B7/00 ,  G01D5/14 ,  G01D5/16 ,  G01D5/18 ,  G01D5/245 ,  G01P3/488 ,  G01R33/09 ,  G01B7/30

CPC分类号： G01D5/147 ,  G01P3/488

摘要： A displacement detector to obtain high-precision displacement detection with a small-sized, low-cost apparatus. A displacement detector comprises rectangular teeth formed on the outer circumference surface at a pitch of .lambda., a gearwheel made of a magnetic material, a magnet having a width larger than the pitch .lambda. of the gearwheel and so disposed that the N-pole thereof faces the teeth, and a pair of MREs constructed by alternately connecting the long strip portions and short strip portions thereof to have a zigzag shape. A uniform cyclic magnet field from the magnet to the gearwheel is formed within a gap between the gearwheel and the magnet. On the same phase of the magnet field are disposed the pair of MREs so that the directions of the long strip portions thereof and the directions of the magnetic force lines make angles of approximately 45.degree. and approximately 135.degree., respectively.

摘要翻译： 一种位移检测器，用小型，低成本的装置获得高精度位移检测。 位移检测器包括以λ的间距形成在外圆周表面上的矩形齿，由磁性材料制成的齿轮，具有大于齿轮的间距λ的宽度的磁体，并且被布置成使得其N极面向 齿，以及通过交替地将长带部分和短条带部分交替地连接以形成锯齿形的一对MRE。 在磁体和磁体之间的间隙内形成有从磁体到齿轮的均匀的循环磁场。 在磁场的相同相位上设置一对MRE，使得其长条状部分的方向和磁力线的方向分别为大约45度和大约135度的角度。

公开(公告)号：US5587343A

公开(公告)日：1996-12-24

申请号：US401044

申请日：1995-03-08

申请人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama

发明人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama

IPC分类号： G01L1/18 ,  G01L1/22 ,  G01P15/08 ,  G01P15/12 ,  H01L21/28 ,  H01L29/51 ,  H01L29/84 ,  H01L21/00 ,  B44C1/22

CPC分类号： H01L21/28238 ,  G01P15/0802 ,  G01P15/124 ,  H01L29/51 ,  H01L29/84 ,  G01P2015/0828

摘要： A method for fabricating a semiconductor sensor wherein deflection of a movable member is disclosed. A silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the silicon oxide film by means of a low-pressured chemical vapor deposition process. At this time, silane is caused to flow into an oven, and the supply of silane is stopped when a layer of polycrystalline silicon has been deposited on the silicon substrate, and a first polycrystalline silicon layer is formed. By means of stopping the supply of silane, a silicon oxide layer of a thickness of several angstroms to several tens of angstroms is formed on the first polycrystalline silicon layer by atmosphere O.sub.2. A second polycrystalline silicon layer of a thickness of 1 .mu.m is formed on the silicon oxide layer by means of causing silane to flow into the oven. Patterning by dry etching or the like through a photo-lithographic process is performed to form a movable member. The silicon oxide film below the movable member is then etched.

摘要翻译： 一种制造半导体传感器的方法，其中公开了可移动部件的偏转。 在硅基板上形成氧化硅膜，通过低压化学气相沉积工艺在氧化硅膜上形成由多晶硅构成的可动部件。 此时，使硅烷流入烘箱，当在硅衬底上沉积多晶硅层时，停止供给硅烷，形成第一多晶硅层。 通过停止硅烷的供给，通过气氛O2在第一多晶硅层上形成厚度为几埃至数十埃的氧化硅层。 通过使硅烷流入烘箱中，在氧化硅层上形成厚度为1μm的第二多晶硅层。 进行通过光刻法的干蚀刻等的图案化，形成可动部件。 然后蚀刻可动件下方的氧化硅膜。

公开(公告)号：US5532910A

公开(公告)日：1996-07-02

申请号：US502580

申请日：1995-07-14

申请人： Yasutoshi Suzuki ,  Kenichi Ao ,  Yoshimi Yoshino ,  Ryoichi Narita ,  Hiroshi Omi

发明人： Yasutoshi Suzuki ,  Kenichi Ao ,  Yoshimi Yoshino ,  Ryoichi Narita ,  Hiroshi Omi

IPC分类号： C23C18/16 ,  H01G4/228 ,  H01L21/00 ,  H01L23/50 ,  H01L25/00 ,  H01L25/16 ,  H05K1/02 ,  H05K1/18 ,  H05K3/20 ,  H05K3/24 ,  H05K3/32 ,  H05K3/34 ,  H05K5/02

CPC分类号： H01L21/67121 ,  H01L25/16 ,  H05K3/321 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15747 ,  H01L2924/19041 ,  H01L2924/19106 ,  H05K1/0231 ,  H05K1/181 ,  H05K2201/0397 ,  H05K2201/10636 ,  H05K2201/10924 ,  H05K2203/0315 ,  H05K2203/1157 ,  H05K3/202 ,  H05K3/244 ,  Y02P70/611

摘要： A hybrid integrated circuit having a lead frame electrically connected to electronic components by means of a silver (Ag) paste, the hybrid integrated circuit comprising: an electroless-plated coating on the lead frame, the coating being free from an insulating surface oxide layer at least in a connection area in which the electrical connection is provided. A process of producing this hybrid integrated circuit comprises: a first step of electroless-plating a lead frame by using a phosphorus-containing reducing agent to form a coating on the lead frame; a second step of mounting electronic components on the lead frame and then electrically and mechanically connecting the former to the latter by means of an electroconductive paste; and a third step of maintaining the surface of the electroless-plated coating free from a phosphorus-containing oxide layer during the connecting operation.

摘要翻译： 一种混合集成电路，其具有通过银（Ag）糊电连接到电子部件的引线框架，所述混合集成电路包括：引线框架上的无电镀层，所述涂层不含绝缘表面氧化物层 至少在提供电连接的连接区域中。 制造该混合集成电路的方法包括：通过使用含磷还原剂对引线框架进行无电镀以在引线框架上形成涂层的第一步骤; 将电子部件安装在引线框架上，然后通过导电浆料将前者与后者电连接和机械连接的第二步骤; 以及在连接操作期间保持无电镀涂层的表面不含磷的氧化物层的第三步骤。

公开(公告)号：US08829627B2

公开(公告)日：2014-09-09

申请号：US13479393

申请日：2012-05-24

申请人： Tetsuo Fujii ,  Keisuke Gotoh ,  Kenichi Ao

发明人： Tetsuo Fujii ,  Keisuke Gotoh ,  Kenichi Ao

IPC分类号： H01L29/84 ,  G01P1/02 ,  B60C23/04 ,  G01L9/00 ,  G01P15/08 ,  G01L19/00 ,  B81B7/02 ,  G01P15/125

CPC分类号： G01L9/0073 ,  B60C23/0488 ,  B81B7/02 ,  B81B2201/025 ,  B81B2207/015 ,  G01L9/0085 ,  G01L19/0092 ,  G01P1/023 ,  G01P15/08 ,  G01P15/125

摘要： A dynamic quantity sensor device includes: first and second dynamic quantity sensors having first and second dynamic quantity detecting units; and first and second substrates, which are bonded to each other to provide first and second spaces. The first and second units are air-tightly accommodated in the first and second spaces, respectively. A SOI layer of the first substrate is divided into multiple semiconductor regions by trenches. First and second parts of the semiconductor regions provide the first and second units, respectively. The second part includes: a second movable semiconductor region having a second movable electrode, which is provided by a sacrifice etching of the embedded oxide film; and a second fixed semiconductor region having a second fixed electrode. The second sensor detects the second dynamic quantity by measuring a capacitance between the second movable and fixed electrodes, which is changeable in accordance with the second dynamic quantity.

摘要翻译： 动态量传感器装置包括：具有第一和第二动态量检测单元的第一和第二动态量传感器; 以及彼此结合以提供第一和第二空间的第一和第二基板。 第一和第二单元分别气密地容纳在第一和第二空间中。 第一衬底的SOI层被沟槽分成多个半导体区域。 半导体区域的第一和第二部分分别提供第一和第二单元。 第二部分包括：具有第二可移动电极的第二可移动半导体区域，其通过对嵌入的氧化膜的牺牲蚀刻而提供; 以及具有第二固定电极的第二固定半导体区域。 第二传感器通过测量可根据第二动态量改变的第二可动电极和固定电极之间的电容来检测第二动态量。

公开(公告)号：US07290449B2

公开(公告)日：2007-11-06

申请号：US11079246

申请日：2005-03-15

申请人： Kenichi Ao

发明人： Kenichi Ao

IPC分类号： G01C19/56 ,  G01P9/04

CPC分类号： G01C19/5719 ,  G01P15/125

摘要： A physical quantity sensor includes: a substrate; an angular speed sensor disposed on the substrate; and an acceleration sensor disposed on the substrate. The angular speed sensor includes an oscillator capable of oscillating by a driving force and displaceable in accordance with a Coriolis force attributed to an angular speed of the oscillator. The acceleration sensor includes a movable portion displaceable in accordance with an acceleration applied to the acceleration sensor. The oscillator has a driving direction, which is not parallel to a displacement direction of the movable portion. The physical quantity sensor having the angular speed sensor and the acceleration sensor detects both of the angular speed and the acceleration with high accuracy.

摘要翻译： 物理量传感器包括：基板; 设置在所述基板上的角速度传感器; 以及设置在基板上的加速度传感器。 角速度传感器包括能够通过驱动力振动并且可以根据归因于振荡器的角速度的科里奥利力移动的振荡器。 加速度传感器包括可根据施加到加速度传感器的加速度移动的可移动部分。 振荡器具有与可动部的位移方向不平行的驱动方向。 具有角速度传感器和加速度传感器的物理量传感器以高精度检测角速度和加速度两者。

公开(公告)号：US20050217377A1

公开(公告)日：2005-10-06

申请号：US11079246

申请日：2005-03-15

申请人： Kenichi Ao

发明人： Kenichi Ao

IPC分类号： G01C19/56 ,  G01C19/5755 ,  G01C19/5769 ,  G01P3/04 ,  G01P15/125

CPC分类号： G01C19/5719 ,  G01P15/125

摘要： A physical quantity sensor includes: a substrate; an angular speed sensor disposed on the substrate; and an acceleration sensor disposed on the substrate. The angular speed sensor includes an oscillator capable of oscillating by a driving force and displaceable in accordance with a Coriolis force attributed to an angular speed of the oscillator. The acceleration sensor includes a movable portion displaceable in accordance with an acceleration applied to the acceleration sensor. The oscillator has a driving direction, which is not parallel to a displacement direction of the movable portion. The physical quantity sensor having the angular speed sensor and the acceleration sensor detects both of the angular speed and the acceleration with high accuracy.

摘要翻译： 物理量传感器包括：基板; 设置在所述基板上的角速度传感器; 以及设置在基板上的加速度传感器。 角速度传感器包括能够通过驱动力振动并且可以根据归因于振荡器的角速度的科里奥利力移动的振荡器。 加速度传感器包括可根据施加到加速度传感器的加速度移动的可移动部分。 振荡器具有与可动部的位移方向不平行的驱动方向。 具有角速度传感器和加速度传感器的物理量传感器以高精度检测角速度和加速度两者。