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    Method for manufacturing semiconductor laser
    43.
    发明申请
    Method for manufacturing semiconductor laser 有权
    制造半导体激光器的方法

    公开(公告)号：US20100151611A1

    公开(公告)日：2010-06-17

    申请号：US12591286

    申请日：2009-11-16

    申请人： Tsuyoshi Fujimoto ,  Nozomi Ohashi ,  Masaru Kuramoto ,  Eiji Nakayama

    发明人： Tsuyoshi Fujimoto ,  Nozomi Ohashi ,  Masaru Kuramoto ,  Eiji Nakayama

    IPC分类号： H01L21/28

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/22

    摘要： A method for manufacturing a semiconductor laser includes the steps of forming a mask layer having a stripe-shaped mask portion corresponding to a ridge stripe to be formed on a nitride-based group III-V compound semiconductor layer, etching the nitride-based group III-V compound semiconductor layer to a predetermined depth using the mask layer to form the ridge stripe, forming a resist to cover the mask layer and the nitride-based group III-V compound semiconductor layer, etching-back the resist until the stripe-shaped mask portion of the mask layer is exposed, removing the exposed mask portion of the mask layer by etching to expose the upper surface of the ridge stripe, forming a metal film on the resist and the exposed ridge stripe to form an electrode on the ridge stripe, removing the resist together with the metal film formed thereon, and removing the mask layer by etching.

    摘要翻译： 一种制造半导体激光器的方法包括以下步骤：形成具有对应于氮化物基III-V族化合物半导体层上形成的脊条的条形掩模部分的掩模层，蚀刻氮化物基III族 -V化合物半导体层到预定深度，使用掩模层形成脊条，形成抗蚀剂以覆盖掩模层和基于氮化物的III-V族化合物半导体层，将抗蚀剂刻蚀至条状 掩模层的掩模部分被暴露，通过蚀刻去除掩模层的暴露的掩模部分以暴露脊条的上表面，在抗蚀剂和暴露的脊条上形成金属膜，以在脊条上形成电极 与形成在其上的金属膜一起除去抗蚀剂，并通过蚀刻去除掩模层。

    METHOD FOR PRODUCING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, AND OPTICAL DISK DRIVE
    44.
    发明申请
    METHOD FOR PRODUCING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, AND OPTICAL DISK DRIVE 有权
    生产半导体激光，半导体激光，光学拾取和光盘驱动的方法

    公开(公告)号：US20100080107A1

    公开(公告)日：2010-04-01

    申请号：US12568855

    申请日：2009-09-29

    申请人： Rintaro Koda ,  Masaru Kuramoto ,  Eiji Nakayama ,  Tsuyoshi Fujimoto

    发明人： Rintaro Koda ,  Masaru Kuramoto ,  Eiji Nakayama ,  Tsuyoshi Fujimoto

    IPC分类号： G11B7/00 ,  H01L33/00 ,  H01S5/16 ,  H01S5/028

    CPC分类号： H01S5/16 ,  B82Y20/00 ,  H01S5/168 ,  H01S5/2275 ,  H01S5/2277 ,  H01S5/34333

    摘要： A method for producing a semiconductor laser having an edge window structure includes the steps of forming masks of insulating films on a nitride-based III-V compound semiconductor substrate including first regions and second regions periodically arranged in parallel therebetween; and growing a nitride-based III-V compound semiconductor layer in a region not covered by the masks. The first region between each two adjacent second regions has two or more positions, symmetrical with respect to a center line thereof, where laser stripes are to be formed. The masks are formed on one or both sides of each of the positions where the laser stripes are to be formed at least near a position where edge window structures are to be formed such that the masks are symmetrical with respect to the center line. The nitride-based III-V compound semiconductor layer includes an active layer containing at least indium and gallium.

    摘要翻译： 一种具有边缘窗结构的半导体激光器的制造方法，其特征在于，在氮化物系III-V族化合物半导体基板上形成绝缘膜的掩模的工序，所述掩模包括第一区域和第二区域， 以及在未被掩模覆盖的区域中生长氮化物III-V族化合物半导体层。 每个两个相邻的第二区域之间的第一区域具有相对于其中心线对称的两个或更多个位置，其中将形成激光条纹。 掩模形成在每个位置的一个或两侧上，其中激光条形成至少靠近要形成边缘窗口结构的位置，使得掩模相对于中心线对称。 基于氮化物的III-V族化合物半导体层包括至少含有铟和镓的活性层。

    Semiconductor Laser Device
    46.
    发明申请
    Semiconductor Laser Device 有权
    半导体激光器件

    公开(公告)号：US20080285611A1

    公开(公告)日：2008-11-20

    申请号：US11887412

    申请日：2006-03-30

    申请人： Tsuyoshi Fujimoto

    发明人： Tsuyoshi Fujimoto

    IPC分类号： H01S5/00

    CPC分类号： H01S5/223 ,  H01S5/0021 ,  H01S5/2206 ,  H01S5/2237

    摘要： An object of the invention is to achieve a high output gain waveguide semiconductor laser device exhibiting high reliability by suppressing growth of DLD. A semiconductor laser device includes a semiconductor laser structure of a gain waveguide formed on a semiconductor substrate in which two grooves extending in an oscillation direction thereof are formed, wherein a current injection stripe is arranged between the two grooves. Preferably, a quantum well constituting an active layer of the semiconductor laser device is composed of GaAs.

    摘要翻译： 本发明的一个目的是通过抑制<100> DLD的生长来实现具有高可靠性的高输出增益波导半导体激光器件。 半导体激光器件包括形成在半导体衬底上的增益波导的半导体激光器结构，其中形成有沿其振荡方向延伸的两个沟槽，其中在两个沟槽之间布置有电流注入条纹。 优选地，构成半导体激光器件的有源层的量子阱由GaAs构成。

    Semiconductor laser device
    47.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US06717186B2

    公开(公告)日：2004-04-06

    申请号：US10230988

    申请日：2002-08-30

    申请人： Tsuyoshi Fujimoto ,  Kiyofumi Muro ,  Takeshi Koiso

    发明人： Tsuyoshi Fujimoto ,  Kiyofumi Muro ,  Takeshi Koiso

    IPC分类号： H01L3300

    CPC分类号： H01S5/2231 ,  H01S5/2077 ,  H01S5/222

    摘要： A real index guided semiconductor laser device includes an optical waveguide layer at least on one side of an active layer that has a band gap energy not less than that of the active layer; a cladding layer on an outer side of the optical waveguide layer that has a band gap energy not less than that of the optical waveguide layer; a refractive index control layer having a striped window, buried in the optical waveguide layer by selective growth; and a semiconductor layer formed in the optical waveguide layer by selective growth prior to the selective growth of the refractive index control layer. In a laminated portion including the semiconductor layer and the refractive index control layer, a change in effective refractive index due to a change in thickness of the semiconductor layer is smaller than that of the refractive index control layer.

    摘要翻译： 实际的折射率引导半导体激光器件包括：有源层的至少一侧的光波导层，其具有不小于有源层的带隙能量; 在光波导层的外侧具有不小于光波导层的带隙能量的包层; 折射率控制层，其具有通过选择性生长掩埋在所述光波导层中的条纹窗口; 以及通过在折射率控制层的选择性生长之前的选择性生长而形成在光波导层中的半导体层。 在包括半导体层和折射率控制层的层叠部分中，由于半导体层的厚度变化引起的有效折射率的变化小于折射率控制层的变化。

    Semiconductor laser device
    48.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US06175582B1

    公开(公告)日：2001-01-16

    申请号：US09199435

    申请日：1998-11-25

    申请人： Yumi Naito ,  Yasuo Oeda ,  Tsuyoshi Fujimoto

    发明人： Yumi Naito ,  Yasuo Oeda ,  Tsuyoshi Fujimoto

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/3213 ,  H01S5/3432

    摘要： Optical guide layers are formed on both faces of the active layer, respectively, which optical guide layers have a band gap wider than that of the active layer, an n-type cladding layer and a p-type cladding layer respectively formed so as to sandwich the active layer and the optical guide layers therebetween, which cladding layers have a band gap wider than those of the optical guide layers, and carrier blocking layers are respectively formed between the active layer and the optical guide layers, which carrier blocking layers have a band gap wider than those of the active layer and the optical guide layers. The refractive index of the p-type cladding layer is lower than that of the n-type cladding layer. With such constitution inner losses are limited to a low level, as free carrier absorption is reduced, and the electric and thermal resistances of a semiconductor laser device are reduced, with the result that the laser device is enhanced in efficiency and output power.

    摘要翻译： 导光层分别形成在有源层的两个表面上，这些导光层的带隙宽于有源层，n型包覆层和p型覆层分别形成为夹层 其间的有源层和导光层分别形成在该有源层与导光层之间的这些包层具有比导光层宽的带隙和载流子阻挡层的载流子阻挡层， 间隙宽于有源层和光导层的宽度。 p型覆层的折射率比n型覆层的折射率低。 通过这样的结构，内部损耗被限制在低水平，随着自由载流子吸收减小，并且半导体激光器件的电阻和热电阻降低，结果激光器件的效率和输出功率提高。

    Semiconductor laser device
    49.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US6118799A

    公开(公告)日：2000-09-12

    申请号：US817602

    申请日：1997-06-10

    申请人： Atsushi Okubo ,  Yoshikazu Yamada ,  Tsuyoshi Fujimoto ,  Satoru Okada ,  Yumi Naito ,  Kiyofumi Muro

    发明人： Atsushi Okubo ,  Yoshikazu Yamada ,  Tsuyoshi Fujimoto ,  Satoru Okada ,  Yumi Naito ,  Kiyofumi Muro

    IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S3/085

    CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/2238 ,  H01S5/204 ,  H01S5/222 ,  H01S5/3432

    摘要： A semiconductor device including a buffer layer 32 on n-GaAs, a clad layer 31, a wave guide layer 30 and a carrier block layer 29 of n-AlGaAs, a side barrier layer 28 of non-doped AlGaAs, an active layer 27 which is formed by two non-doped GaAs quantum well layers and a barrier layer of AlGaAs, a side barrier layer 26 of non-doped AlGaAs, a carrier block layer 25, a wave guide layer 23 and a clad layer 22 of p-AlGaAs, and a cap layer 21 of p-GaAs are grown in this order. Inside the wave guide layer 23, current blocking layers 24 having a lower refractive index and higher Al-composition than that of the wave guide layer and sandwich a strip-shaped active region 34. This creates a refractive index difference between the active region 34 and buried regions 33 in which each of the current blocking layers 24 exists, thereby forming a refractive index guide structure. Thus, it is possible to obtain a high-output semiconductor laser device of the refractive index guided type which is easy to manufacture.

    摘要翻译： PCT No.PCT / JP95 / 02118 Sec。 371日期：1997年6月10日 102（e）日期1997年6月10日PCT提交1995年10月16日PCT公布。 WO96 / 12328 PCT出版物 日期：1996年04月25日包括n-GaAs上的缓冲层32，n-AlGaAs的覆盖层31，波导层30和载流子层29的半导体器件，非掺杂AlGaAs的侧面阻挡层28， 由两个非掺杂GaAs量子阱层和AlGaAs的势垒层，非掺杂AlGaAs的侧阻层26，载流子阻挡层25，波导层23和覆盖层22形成的有源层27 的p-AlGaAs，并且p-GaAs的覆盖层21依次生长。 在波导层23内，电流阻挡层24具有比波导层低的折射率和更高的Al组分，并且夹持条形有源区域34.这在活性区域34和 其中存在每个电流阻挡层24的埋入区域33，从而形成折射率引导结构。 因此，可以获得易于制造的折射率导向型的高输出半导体激光器件。

    Fluid pressure control device having changeover and electromagnetic valves having a common sleeve
    50.
    发明授权
    Fluid pressure control device having changeover and electromagnetic valves having a common sleeve 失效
    具有切换的流体压力控制装置和具有公共套筒的电磁阀

    公开(公告)号：US5413406A

    公开(公告)日：1995-05-09

    申请号：US245660

    申请日：1994-05-18

    申请人： Seiji Nokubo ,  Teruhisa Kohno ,  Tsuyoshi Fujimoto

    发明人： Seiji Nokubo ,  Teruhisa Kohno ,  Tsuyoshi Fujimoto

    IPC分类号： F16K31/06 ,  B60T8/36 ,  B60T8/50 ,  F16K31/42 ,  F16K31/00

    CPC分类号： B60T8/5037 ,  B60T8/368 ,  Y10T137/87217

    摘要： A fluid pressure control unit has a changeover valve and an electromagnetic discharge valve combined with each other so that with the opening and closing of the latter valve, the communication between the inlet leading to the pressure source and the first and second outlets leading to wheel brakes is changed over for normal braking, pressure reduction for antilock control and pressure reincrease. Part of the sleeve of the changeover valve is used as the frame of the discharge valve which functions as a magnetic circuit. This reduces the number of parts, eliminates the need for an O-ring and facilitates maintenance.

    摘要翻译： 流体压力控制单元具有彼此结合的切换阀和电磁排放阀，使得通过打开和关闭后者阀，通向压力源的入口与通向车轮制动器的第一和第二出口之间的连通 正常制动切换，防抱死控制和压力再加压减压。 切换阀的套筒的一部分用作用作磁路的排出阀的框架。 这减少了零件数量，消除了O型圈的需要，并有助于维护。