METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME
    44.
    发明申请
    METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME 审中-公开
    生产碳化硅(SiC)晶体和碳化硅(SiC)晶体的方法

    公开(公告)号:US20090205561A1

    公开(公告)日:2009-08-20

    申请号:US12305313

    申请日:2007-06-26

    IPC分类号: C30B9/10

    CPC分类号: C30B29/36 C01B32/956 C30B9/10

    摘要: A production method is provided that enables to produce a large-sized bulk silicon carbide (SiC) crystal of high quality at low cost. A large-sized bulk silicon carbide (SiC) crystal of high quality can be obtained at a lower temperature by reacting silicon (Si) and carbon (C) produced from a lithium carbide such as dilithium acetylide (Li2C2) with each other in an alkali metal melt and thereby producing or growing a silicon carbide (SiC) crystal. FIG. 17 shows a high-resolution TEM (HR-TEM) image of the resultant 2H—SiC crystal. A preferable lithium carbide is dilithium acetylide (Li2C2). A preferable alkali metal melt is a melt of lithium alone.

    摘要翻译: 提供一种能够以低成本制造高质量的大尺寸体积碳化硅(SiC)晶体的制造方法。 通过使硅(Si)与碳化锂(Li 2 C 2)等碳化锂制成的碳(C)在碱中相互反应,可以在较低的温度下获得高质量的大尺寸体积碳化硅(SiC) 金属熔化,从而生产或生长碳化硅(SiC)晶体。 图。 图17示出了所得2H-SiC晶体的高分辨率TEM(HR-TEM)图像。 优选的碳化锂是二乙炔锂(Li2C2)。 优选的碱金属熔体是单独的锂的熔体。

    Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device
    49.
    发明申请
    Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device 审中-公开
    III族氮化物晶体基板及其制造方法和III-III族氮化物半导体器件

    公开(公告)号:US20070296061A1

    公开(公告)日:2007-12-27

    申请号:US11578242

    申请日:2005-03-30

    IPC分类号: H01L29/20 C03B17/00

    摘要: A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

    摘要翻译: 一种制造III族氮化物晶体基板的方法,包括以下步骤:将含碱金属元素的物质,含III族元素的物质和含氮元素的物质引入反应器中,形成含有 至少反应器中的碱金属元素,III族元素和氮元素,以及来自熔体的生长III族氮化物晶体,其特征在于在干燥容器中处理含碱金属元素的物质,其中 至少在将含碱金属元素的物质引入反应器的步骤中,水分浓度被控制在至多1.0ppm。 可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法,以及III族氮化物半导体器件。

    Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device
    50.
    发明授权
    Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device 有权
    制造III族氮化物晶体的方法,制造半导体衬底的方法,III族氮化物晶体,半导体衬底和电子器件

    公开(公告)号:US07255742B2

    公开(公告)日:2007-08-14

    申请号:US10884252

    申请日:2004-07-02

    IPC分类号: C30B29/38

    摘要: The present invention provides a method of manufacturing Group III nitride crystals that are of high quality, are manufactured efficiently, and are useful and usable as a substrate for semiconductor manufacturing processes. A semiconductor layer that is made of a semiconductor and includes crystal-nucleus generation regions at its surface is formed. The semiconductor is expressed by a composition formula of AluGavIn1-u-vN (where 0≦u≦1, 0≦v≦1, and u+v≦1). Group III nitride crystals then are grown on the semiconductor layer by bringing the crystal-nucleus generation regions of the semiconductor layer into contact with a melt in an atmosphere including nitrogen. The melt contains nitrogen, at least one Group III element selected from the group consisting of gallium, aluminum, and indium, and at least one of alkali metal and alkaline-earth metal.

    摘要翻译: 本发明提供一种制造高品质的III族氮化物晶体的方法,其有效制造,并且可用作半导体制造工艺的基板。 形成由半导体构成的半导体层,其表面具有晶核生成区域。 半导体由以下组成式表示:在1-uv N中(其中0 <= u <= 1,0,..., <= v <= 1,u + v <= 1)。 然后通过在包括氮气的气氛中使半导体层的晶核生成区域与熔体接触,在半导体层上生长III族氮化物晶体。 熔体含有氮,至少一种选自镓,铝和铟的III族元素,以及碱金属和碱土金属中的至少一种。