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公开(公告)号：US07167489B2
公开(公告)日：2007-01-23
申请号：US10490582
申请日：2002-07-18
申请人： Toshiyuki Kawakami , Yukio Yamasaki , Tomoki Ono , Shigetoshi Ito , Susumu Omi
发明人： Toshiyuki Kawakami , Yukio Yamasaki , Tomoki Ono , Shigetoshi Ito , Susumu Omi
CPC分类号： H01S5/32341 , H01S5/0654 , H01S5/0655 , H01S5/10 , H01S5/1064 , H01S5/2231
摘要： According to an aspect of the present invention, a nitride semiconductor laser device includes a nitride semiconductor active layer, and a stripe-shaped waveguide for guiding light generated in the active layer. At least one pair of light-absorbing films are provided in at least local regions on the opposite sides of the stripe-shaped waveguide, to reach a distance within 0.3 μm from the waveguide. According to another aspect of the present invention, a gan-based semiconductor laser device includes first conductivity type semiconductor layers, a semiconductor active layer and second conductivity type semiconductor layers stacked sequentially. The laser device further includes a ridge stripe provided to cause a refractive index difference for confinement of light in a lateral direction crossing a longitudinal direction of a cavity, and a current-introducing window portion provided on the ridge stripe. The current-introducing window portion includes a narrow portion that is locally narrowed compared to the width of the ridge stripe.
摘要翻译： 根据本发明的一个方面，氮化物半导体激光器件包括氮化物半导体有源层和用于引导在有源层中产生的光的条形波导。 至少一对光吸收膜设置在条状波导的相对侧上的至少局部区域中，以达到距波导0.3μm的距离。 根据本发明的另一方面，一种基于半导体的半导体激光器件包括依次层叠的第一导电型半导体层，半导体有源层和第二导电型半导体层。 激光装置还包括设置成使得在与空腔的纵向方向交叉的横向方向上限制光的折射率差异的脊条和设置在脊条上的电流引入窗口部分。 电流引入窗口部分包括与脊条的宽度相比局部变窄的窄部分。
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42.发明授权公开(公告)号：US07015058B2
公开(公告)日：2006-03-21
申请号：US10917514
申请日：2004-08-13
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/2231 , H01S5/3202 , H01S2301/173
摘要： A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor formed on a GaN substrate, a laser optical waveguide region is formed elsewhere than right above a dislocation-concentrated region extending so as to vertically penetrate the substrate, and electrodes are formed on the top surface of the layered structure and on the bottom surface of the substrate elsewhere than right above or below the dislocation-concentrated region. In a portion of the top surface of the layered structure and in a portion of the bottom surface of the substrate right above and below the dislocation-concentrated region, dielectric layers may be formed to prevent the electrodes from making contact with those regions.
摘要翻译： 也可以使用III族氮化物半导体作为基板的氮化物半导体激光器件具有优异的操作特性和较长的激光振荡寿命。 在形成在GaN衬底上的III族氮化物半导体的分层结构中，激光光波导区域形成在垂直贯穿衬底的位错集中区域的正上方的别处，并且电极形成在 层叠结构，并且位于基底的底表面上，位于位错集中区域正上方或下方。 在层状结构的顶表面的一部分中，并且在位错集中区域的正上方和下方的衬底的底表面的一部分中，可以形成电介质层以防止电极与那些区域接触。
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43.发明申请Method and device for driving LED element, illumination apparatus, and display apparatus 失效用于驱动LED元件，照明装置和显示装置的方法和装置公开(公告)号：US20050168564A1
公开(公告)日：2005-08-04
申请号：US11043938
申请日：2005-01-28
CPC分类号： H05B33/0869 , H05B33/0803 , H05B33/0818 , H05B33/086 , H05B33/0863
摘要： A driving method and a driving device are provided for an LED element in which light emitting layers different from each other in light emission wavelength peak, put on each other with a barrier layer being interposed, are sandwiched by a pair of p-type and n-type layers, and color of emitted light from which substantially depends only upon driving current value. The method comprises a driving current value calculation step of obtaining a value for designating a current value corresponding to a desired color of emitted light from the LED element; a driving current generation step of generating a driving current having the current value designated by the value obtained in the driving current value calculation step; and a driving current supply step of supplying the LED element with the driving current generated in the driving current generation step.
摘要翻译： 提供了一种用于LED元件的驱动方法和驱动装置，其中插入有阻挡层的发光波长峰值彼此不同的发光层被夹在一起，由一对p型和n型 型层，以及基本上仅取决于驱动电流值的发射光的颜色。 该方法包括驱动电流值计算步骤，用于获得用于指定与来自LED元件的发射光的期望颜色相对应的电流值的值; 驱动电流产生步骤，产生具有由所述驱动电流值计算步骤中获得的值指定的电流值的驱动电流; 以及向所述LED元件供给在所述驱动电流产生步骤中产生的驱动电流的驱动电流供给步骤。
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44.发明授权公开(公告)号：US06891201B2
公开(公告)日：2005-05-10
申请号：US10466339
申请日：2002-01-09
CPC分类号： B82Y20/00 , H01L33/0075 , H01S5/0207 , H01S5/2231 , H01S5/32341 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor light emitting device includes a processed substrate (101a) including a groove and a hill formed on a main surface of a nitride semiconductor substrate, a nitride semiconductor underlayer (102) covering the groove and the hill of the processed substrate, and a light emitting device structure having a light emitting layer (106) including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between an n type layer (103-105) and a p type layer (107-110) over the nitride semiconductor underlayer. A current-constricting portion of the light emitting device structure is formed above a region more than 1 μm away from the center of the groove in the width direction and more than 1 μm away from the center of the hill in the width direction.
摘要翻译： 氮化物半导体发光器件包括：处理衬底（101a），其包括形成在氮化物半导体衬底的主表面上的沟槽和丘丘;覆盖所述沟槽和所述被处理衬底的所述山丘的氮化物半导体衬底（102），以及 具有包括量子阱层或量子阱层的发光层（106）和与n型层（103-105）和ap型层（107）之间的量子阱层接触的阻挡层的发光器件结构 -110）在氮化物半导体衬底上。 发光器件结构的电流限制部分形成在距宽度方向上的槽的中心超过1um的区域上方，并且在宽度方向上距离山的中心大于1mum。
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45.发明授权公开(公告)号：US06865201B2
公开(公告)日：2005-03-08
申请号：US10104931
申请日：2002-03-22
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/0421 , H01S5/22 , H01S5/3201 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2301/18
摘要： In connection with a nitride semiconductor laser device optimal for example for optical pickup and an optical information reproduction apparatus having superior condensation characteristics, the semiconductor laser device includes a substrate of nitride semiconductor, a lower clad layer of nitride semiconductor stacked thereon, an active layer stacked thereon, an upper clad layer of nitride semiconductor stacked thereon, and a contact layer of AlaInbGa1−a−bN stacked thereon having a lattice constant larger than the substrate of nitride semiconductor, and the device is cleaved and thus divided to have a surface serving as a resonator mirror.
摘要翻译： 关于优选例如光学拾取器的氮化物半导体激光器件和具有优异的冷凝特性的光学信息再现装置，半导体激光器件包括氮化物半导体的衬底，堆叠在其上的氮化物半导体的下部包覆层，堆叠的有源层 在其上层叠有氮化物半导体的上包层，以及其上堆叠有具有大于氮化物半导体衬底的晶格常数的AlInGaGaAs-a-bN的接触层，并且将该器件切割并因此被分割成具有用作 谐振镜。
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46.发明授权公开(公告)号：US06765233B2
公开(公告)日：2004-07-20
申请号：US09904162
申请日：2001-07-11
申请人： Yuhzoh Tsuda , Shigetoshi Ito , Seiki Yano
发明人： Yuhzoh Tsuda , Shigetoshi Ito , Seiki Yano
IPC分类号： H01L2715
CPC分类号： H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： A method for producing a semiconductor substrate of the present invention, includes the steps: forming a first patterned mask containing a material having a growth suppressing effect on a lower substrate; growing a semiconductor crystal on the lower substrate via the first patterned mask to form a first semiconductor crystal layer; forming a second patterned mask containing a material having a growth suppressing effect on or above the lower substrate, the second patterned mask at least having a surface which is positioned at a level different from a level of a surface of the first patterned mask, with respect to a surface of the lower substrate; and growing a semiconductor crystal on or above the lower substrate via the second patterned mask to form a second semiconductor crystal layer.
摘要翻译： 本发明的半导体衬底的制造方法包括以下步骤：在下基板上形成含有具有生长抑制作用的材料的第一图案掩模; 通过第一图案化掩模在下基板上生长半导体晶体以形成第一半导体晶体层; 形成第二图案化掩模，其包含在下基板上或上方具有生长抑制作用的材料，所述第二图案化掩模至少具有位于与第一图案化掩模的表面的水平不同的水平面的表面，相对于 到下基板的表面; 以及经由所述第二图案化掩模在所述下基板上或上方生长半导体晶体以形成第二半导体晶体层。
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公开(公告)号：US06737678B2
公开(公告)日：2004-05-18
申请号：US10188369
申请日：2002-07-03
申请人： Toshiyuki Kawakami , Yukio Yamasaki , Shigetoshi Ito , Susumu Omi
发明人： Toshiyuki Kawakami , Yukio Yamasaki , Shigetoshi Ito , Susumu Omi
IPC分类号： H01L2715
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/0207 , H01S5/1082 , H01S5/22 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： In a wafer having an LD structure 251 formed on a GaN-based substrate 250, cleavage guide grooves 252 are formed in its surface by scribing from above the LD structure 251 with a diamond needle. The cleavage guide grooves 252 are formed one along each of stripe-shaped waveguides 253 formed parallel to the direction of the wafer, and are formed in the shape of broken lines in the direction of the wafer.
摘要翻译： 在具有形成在GaN基基板250上的LD结构251的晶片中，通过用金刚石针从LD结构251的上方划线而在其表面上形成解理引导槽252。 解理引导槽252沿着平行于晶片的<1-100>方向形成的条形波导253形成一个，并且在晶片的<11-20>方向上形成为虚线的形状 。
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48.发明授权公开(公告)号：US06586779B2
公开(公告)日：2003-07-01
申请号：US10128490
申请日：2002-04-24
申请人： Yuhzoh Tsuda , Shigetoshi Ito
发明人： Yuhzoh Tsuda , Shigetoshi Ito
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , G11B7/127 , H01L33/325 , H01S5/0425 , H01S5/22 , H01S5/34333
摘要： There is provided a light emitting device having high luminous efficacy or emission intensity. The device includes a light emitting layer provided between n- and p-type layers of nitride semiconductor formed on a GaN substrate. The light emitting layer is formed of a well layer or a combination of well and barrier layers. The well layer is made of a nitride semiconductor containing an element X, N and Ga, wherein X is As, P or Sb. The ratio of the number of the atoms of element X to the sum of the number of the atoms of element X and N, is not more than 30 atomic percent. The well layer contains Mg, Be, Zn, Cd, C, Si, Ge, Sn, O, S, Se or Te as an impurity for improving the crystallinity of the well layer.
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49.发明授权公开(公告)号：US06452216B1
公开(公告)日：2002-09-17
申请号：US09952845
申请日：2001-09-11
申请人： Yuhzoh Tsuda , Takayuki Yuasa , Shigetoshi Ito , Mototaka Taneya
发明人： Yuhzoh Tsuda , Takayuki Yuasa , Shigetoshi Ito , Mototaka Taneya
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L33/32 , H01S5/0021 , H01S5/0207 , H01S5/3203 , H01S5/32341
摘要： A nitride semiconductor light emitting device includes a worked substrate including grooves and lands formed on a main surface of a nitride semiconductor substrate, a nitride semiconductor underlayer covering the grooves and the lands of the worked substrate and a nitride semiconductor multilayer emission structure including an emission layer including a quantum well layer or both a quantum well layer and a barrier layer in contact with the quantum well layer between an n-type layer and a p-type layer over the nitride semiconductor underlayer, while the width of the grooves is within the range of 11 to 30 &mgr;m and the width of the lands is within the range of 1 to 20 &mgr;m.
摘要翻译： 氮化物半导体发光器件包括：加工衬底，其包括形成在氮化物半导体衬底的主表面上的沟槽和焊盘;覆盖所述沟槽和所述加工衬底的焊盘的氮化物半导体衬底;以及氮化物半导体多层发射结构， 包括与氮化物半导体下层上的n型层和p型层之间的量子阱层接触的量子阱层或势垒层，而沟槽的宽度在该范围内 为11〜30μm，平台的宽度为1〜20μm的范围。
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公开(公告)号：US08807812B2
公开(公告)日：2014-08-19
申请号：US13362815
申请日：2012-01-31
CPC分类号： F21S48/1159 , F21S41/147 , F21S41/16 , F21S41/24 , G03B21/204
摘要： A light emitting device of the present invention includes: an LD chip for emitting excitation light; a light emitting body for emitting fluorescence upon irradiation with the excitation light from the LD chip; and a mirror including a light reflecting concave surface for reflecting the fluorescence from the light emitting body, the light reflecting concave surface of the mirror having a through-hole at a region other than a bottom region in the vicinity of the bottom of the light reflecting concave surface, and a truncated pyramid light converging section being inserted into the through-hole in order to guide the excitation light from the LD chip to the light emitting body.
摘要翻译： 本发明的发光器件包括：用于发射激发光的LD芯片; 用于从LD芯片照射激发光时发出荧光的发光体; 以及反射镜，其具有用于反射来自发光体的荧光的光反射凹面，反射镜的光反射凹面在反射光的底部附近的底部区域以外的区域具有通孔 凹入的表面和截锥形的会聚部分插入到通孔中，以将激发光从LD芯片引导到发光体。
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