公开(公告)号：US5002796A

公开(公告)日：1991-03-26

申请号：US354716

申请日：1989-05-22

申请人： Shoji Nishida

发明人： Shoji Nishida

IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/50 ,  C23C16/511 ,  G02F1/1343 ,  H01B1/08 ,  H01L21/205 ,  H01L31/04 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L31/1884 ,  C23C16/407 ,  G02F1/13439 ,  H01B1/08 ,  H01L31/075 ,  Y02B10/10 ,  Y02E10/548

摘要： A functional zinc oxide deposited thin film having high light permeability and low resistivity can be obtained at a low temperature of about 200.degree. C. on an inexpensive substrate such as glass by a method of activating a starting material gas by means of activation energy, in a space different from a film-forming space thereby forming a precursor contributing to the formation of a deposited film, activating a starting material gas in a space different from the film-forming space and the space just-mentioned above by means of activation energy thereby forming an active species that chemically reacts with the precursor, and introducing the precursor and the active species into the film-forming space, thereby depositing a film, wherein the starting material gas for forming the precursor is an alkyl zinc compound and the starting material for forming the active species is an oxygen gas or an ozone gas. This enables mass production of photovoltaic devices at high efficiency using a PN junction or PIN junction or high performance flat display device using liquid crystals, by which practical provision of power sources for domestic equipments or power sources for electric power appliance or large area display device can be obtained at a reduced cost.

摘要翻译： 通过活化能活化起始原料气体的方法，可以在廉价的基板如玻璃上，在约200℃的低温下获得具有高透光性和低电阻率的功能氧化锌沉积薄膜， 与成膜空间不同的空间，从而形成有助于形成沉积膜的前体，借助于活化能在与成膜空间不同的空间和上述空间中活化原料气体，从而 形成与前体发生化学反应的活性物质，并将前体和活性物质引入成膜空间，从而沉积膜，其中用于形成前体的起始原料气体是烷基锌化合物和用于 形成活性物质是氧气或臭氧气体。 这使得可以使用PN结或PIN结或使用液晶的高性能平面显示装置高效率地批量生产光电器件，通过该实施例，用于家用设备或用于电力设备或大面积显示装置的电源的电源的实际供应可以 以较低的成本获得。

公开(公告)号：US08344607B2

公开(公告)日：2013-01-01

申请号：US12627893

申请日：2009-11-30

申请人： Naofumi Aoki ,  Shoji Nishida

发明人： Naofumi Aoki ,  Shoji Nishida

IPC分类号： H01J1/00 ,  H01J19/06

CPC分类号： H01J1/3044 ,  H01J1/304 ,  H01J1/3046 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

摘要： An electron-emitting device includes an electroconductive member and a lanthanum boride layer on the electroconductive member and further includes an oxide layer between the electroconductive member and the lanthanum boride layer. The oxide layer can contain a lanthanum element. The lanthanum boride layer can be overlaid with a lanthanum oxide layer.

摘要翻译： 电子发射器件包括在导电元件上的导电元件和硼化镧层，并且还包括在导电元件和硼化镧层之间的氧化物层。 氧化物层可以含有镧元素。 硼化镧层可以覆盖有氧化镧层。

公开(公告)号：US06869863B2

公开(公告)日：2005-03-22

申请号：US10379457

申请日：2003-03-03

申请人： Shoji Nishida

发明人： Shoji Nishida

IPC分类号： H01L31/04 ,  H01L21/208 ,  H01L31/068 ,  H01L31/18 ,  H01L21/00 ,  C30B19/00

CPC分类号： H01L31/1804 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/955

摘要： Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step.

摘要翻译： 金属级硅在模具中熔融固化，形成板状硅层，在其上形成晶体硅层，从而提供廉价的太阳能电池，而不需要切片步骤。

公开(公告)号：US06818104B2

公开(公告)日：2004-11-16

申请号：US10669002

申请日：2003-09-24

申请人： Yukiko Iwasaki ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

发明人： Yukiko Iwasaki ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

IPC分类号： C25D1700

CPC分类号： H01L21/02032 ,  C25D11/32 ,  C25D17/10 ,  H01L21/0203 ,  H01L21/76259 ,  H01L29/0657 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363

摘要： In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).

摘要翻译： 在利用薄膜晶体半导体层制造半导体部件和太阳能电池的方法中，该方法包括以下步骤：（1）阳极氧化第一基板的表面以至少形成多孔层 （2）至少在多孔层的表面上形成半导体层，（3）在其周边区域去除半导体层，（4）将第二基板接合到半导体层的表面， （5）在所述多孔层的所述部分处从所述第一基板分离所述半导体层，以及（6）分离后处理所述第一基板的表面并重复上述步骤（1）至（5）。

公开(公告)号：US5575862A

公开(公告)日：1996-11-19

申请号：US352034

申请日：1994-11-30

申请人： Shoji Nishida

发明人： Shoji Nishida

IPC分类号： H01L31/04 ,  H01L21/20 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/18 ,  H01L31/06 ,  H01L31/0368

CPC分类号： H01L31/0745 ,  H01L31/03921 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/1824 ,  H01L31/186 ,  Y02E10/545 ,  Y02E10/546 ,  Y02P70/521

摘要： This invention provides an inexpensive polycrystalline silicon solar cell having a large grain size polycrystalline semiconductor layer grown on a low-cost metallurgical grade (MG) silicon substrate, and a process for its production. The polycrystalline silicon solar cell comprises a MG-silicon substrate, a metal oxide layer formed thereon and a polycrystalline silicon layer formed on the metal oxide layer. The process for producing the polycrystalline silicon solar cell comprises the steps of i) depositing the metal oxide layer on the MG-silicon substrate, ii) depositing a silicon layer on the surface of the metal oxide layer, iii) depositing a cap layer on the surface of the silicon layer and melting the silicon layer by heating from the upper part of the cap layer, followed by solidification to form a polycrystalline silicon layer, and iv) removing the cap layer and forming a semiconductor junction on the surface of the polycrystalline silicon layer.

摘要翻译： 本发明提供了一种在低成本冶金级（MG）硅衬底上生长的具有大晶粒尺寸多晶半导体层的便宜的多晶硅太阳能电池及其生产方法。 多晶硅太阳能电池包括MG-硅衬底，在其上形成的金属氧化物层和形成在金属氧化物层上的多晶硅层。 制造多晶硅太阳能电池的方法包括以下步骤：i）将金属氧化物层沉积在MG-硅衬底上，ii）在该金属氧化物层的表面上沉积一层硅层，iii） 表面，并且通过从盖层的上部加热熔化硅层，然后固化形成多晶硅层，以及iv）去除覆盖层并在多晶硅的表面上形成半导体结 层。

公开(公告)号：US5492859A

公开(公告)日：1996-02-20

申请号：US369325

申请日：1995-01-06

申请人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida

发明人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/2022 ,  H01L21/30604 ,  H01L21/76251 ,  H01L21/76256 ,  Y10S438/977

摘要： A process for producing a semiconductor device substrate comprises the steps of making a first substrate member porous, forming an insulating layer on a second substrate member, forming an amorphous layer on the insulating layer on the second substrate member, bonding the porous first substrate member to the amorphous layer at a temperature of an atmosphere in which the amorphous layer at least does not crystallize, causing solid-phase epitaxial growth of the amorphous layer by utilizing the porous first substrate member as crystal growth seed, and removing the bonded first substrate member after completion of the epitaxial growth by chemical etching.

摘要翻译： 一种制造半导体器件基板的方法包括以下步骤：使第一基板部件多孔，在第二基板部件上形成绝缘层，在第二基板部件上的绝缘层上形成非晶层，将多孔第一基板部件接合到 在非晶层至少不结晶的气氛的温度下的非晶层，通过利用多孔第一基板构件作为晶体生长种子，引起非晶层的固相外延生长，以及在第一基板构件之后移除结合的第一基板构件 通过化学蚀刻完成外延生长。

公开(公告)号：US5103851A

公开(公告)日：1992-04-14

申请号：US623526

申请日：1990-12-07

申请人： Shoji Nishida ,  Takao Yonehara

发明人： Shoji Nishida ,  Takao Yonehara

IPC分类号： H01L31/04 ,  H01L21/20 ,  H01L27/142 ,  H01L31/042 ,  H01L31/18

CPC分类号： H01L21/0242 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L31/03682 ,  H01L31/0475 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1852 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A solar battery characterized in the following respects of having at least one semiconductor multilayer structure (A) having at least, an electrode (a.sub.1); a semiconductor crystal (a.sub.2) of a first conductivity type formed on the electrode (a.sub.1); and at least one set of laminate layers consisting of a high resistance semiconductor layer (a.sub.3) and a semiconductor layer (a.sub.4) of a second conductivity type and a semiconductor layer (a.sub.5) of the first conductivity type which sequentially formed so as to cover the semiconductor crystal (a.sub.2) of the first conductivity type and at least one semiconductor multilayer structure (B) having at least: an electrode (b.sub.1); a semiconductor crystal (b.sub.2) of the second conductivity type formed on the electrode (b.sub.1); and at least one set of laminate layers consisting of a high resistance semiconductor layer (b.sub.3) and a semiconductor layer (b.sub.4) of the first conductivity type and a semiconductor layer (b.sub.5) of the second conductivity type which are alternately arranged on the same insulative substrate. The semiconductor multilayer structure sections (A) and (B) are alternately electrically connected by high resistance semiconductor layers (C) formed so as to cover the semiconductor multilayer structure sections (A) and (B). The surfaces of the high resistance semiconductor layers (C) form light receiving surfaces.

摘要翻译： 一种太阳能电池，其特征在于具有至少一个至少具有电极（a1）的至少一个半导体多层结构（A） 形成在电极（a1）上的第一导电类型的半导体晶体（a2）; 以及由高电阻半导体层（a3）和第二导电类型的半导体层（a4）和第一导电类型的半导体层（a5）组成的至少一组层叠层，其顺序地形成为覆盖 具有第一导电类型的半导体晶体（a2）和至少一个至少具有电极（b1）的半导体多层结构（B） 形成在电极（b1）上的第二导电类型的半导体晶体（b2）; 以及由第一导电类型的高电阻半导体层（b3）和半导体层（b4）和第二导电类型的半导体层（b5）组成的层叠层的至少一组交替地布置在相同的绝缘体 基质。 半导体多层结构部（A）和（B）通过形成为覆盖半导体多层结构部（A）和（B）的高电阻半导体层（C）交替电连接。 高电阻半导体层（C）的表面形成光接收表面。

公开(公告)号：US08388400B2

公开(公告)日：2013-03-05

申请号：US12627982

申请日：2009-11-30

申请人： Naofumi Aoki ,  Shoji Nishida

发明人： Naofumi Aoki ,  Shoji Nishida

IPC分类号： H01J1/304 ,  H01J1/30

CPC分类号： H01J9/025 ,  H01J1/304 ,  H01J1/3044 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0423 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

摘要： The following method is provided: a method of readily fabricating an electron-emitting device, coated with a low-work function material, having good electron-emitting properties with high reproducibility such that differences in electron-emitting properties between electron-emitting devices are reduced. Before a structure is coated with the low-work function material, a metal oxide layer is formed on the structure.

摘要翻译： 提供以下方法：容易地制造涂覆有低功函数材料的电子发射器件的方法，其具有良好的电子发射特性，具有高重现性，使得电子发射器件之间电子发射特性的差异减小 。 在用低功函数材料涂覆结构之前，在结构上形成金属氧化物层。

公开(公告)号：US07238973B2

公开(公告)日：2007-07-03

申请号：US10540261

申请日：2004-12-14

申请人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

发明人： Kazuya Notsu ,  Kiyofumi Sakaguchi ,  Nobuhiko Sato ,  Hajime Ikeda ,  Shoji Nishida

IPC分类号： H01L29/165 ,  H01L29/786

CPC分类号： H01L29/78687 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0262 ,  H01L21/76259 ,  H01L29/1054

摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain induction porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

摘要翻译： SiGe层生长在硅衬底上。 SiGe层或硅衬底和SiGe层通过对SiGe层进行阳极氧化以形成应变感应多孔层或多孔硅层和应变感应多孔层而被开孔化。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变感应多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 可以获得具有高应变硅层的高质量半导体衬底。

公开(公告)号：US06720237B2

公开(公告)日：2004-04-13

申请号：US10083585

申请日：2002-02-27

申请人： Yukiko Iwasaki ,  Tatsumi Shoji ,  Shoji Nishida

发明人： Yukiko Iwasaki ,  Tatsumi Shoji ,  Shoji Nishida

IPC分类号： H01L2130

CPC分类号： H01L21/76254 ,  H01L21/76259 ,  Y02E10/547

摘要： A method for manufacturing a semiconductor film includes a step of preparing a first member including a semiconductor substrate, a semiconductor layer, and a separation layer provided between the semiconductor substrate and the semiconductor layer, a step of bonding or attracting a second member which is hardly heated by induction heating, onto the semiconductor layer of the first member, and a step of separating semiconductor layer from the semiconductor substrate at the separation layer by heating the semiconductor substrate by induction heating.

摘要翻译： 一种制造半导体膜的方法包括制备包括半导体衬底，半导体层和设置在半导体衬底和半导体层之间的分离层的第一构件的步骤，接合或吸引几乎不起作用的第二构件的步骤 通过感应加热加热到第一构件的半导体层上，以及通过感应加热来加热半导体衬底，在分离层处分离半导体衬底的步骤。