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公开(公告)号:US20210319846A1
公开(公告)日:2021-10-14
申请号:US16847181
申请日:2020-04-13
Applicant: Micron Technology, Inc.
Inventor: Bret Addison Johnson , Vijayakrishna J. Vankayala
Abstract: As described, a device may include detection circuitry to detect a deck of a memory array. The deck may include a conductive identifier coupled between a logic high voltage node and the detection circuitry a control circuit coupled to the detection circuit. The control circuit may perform operations including transmitting a test enable signal to the detection circuitry. The detection circuitry may generate a valid signal indicative of an existence of the conductive identifier of the deck in response to the test enable signal. The operations may also include the control circuit receiving the valid signal from the detection circuitry and adjusting a memory operation associated with the memory array based at least in part on the valid signal.
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公开(公告)号:US20210286739A1
公开(公告)日:2021-09-16
申请号:US16819914
申请日:2020-03-16
Applicant: Micron Technology, Inc.
Inventor: Vijayakrishna J. Vankayala
IPC: G06F13/16 , G06F11/10 , H01L25/065
Abstract: Separate inter-die connectors for data and error correction information and related systems, methods, and devices are disclosed. An apparatus includes a master die, a target die including data storage elements, inter-die data connectors, and inter-die error correction connectors. The inter-die data connectors electrically couple the master die to the target die. The inter-die data connectors are configured to conduct data between the master die and the target die. The inter-die error correction connectors electrically couple the master die to the target die. The inter-die error correction connectors are separate from the inter-die data connectors. The inter-die error correction connectors are configured to conduct error correction information corresponding to the data between the master die and the target die.
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43.
公开(公告)号:US10783980B2
公开(公告)日:2020-09-22
申请号:US15975697
申请日:2018-05-09
Applicant: Micron Technology, Inc.
Inventor: William C. Waldrop , Vijayakrishna J. Vankayala
IPC: G11C29/42 , G06F11/10 , G06F11/16 , G11C7/22 , G11C11/4076 , G11C11/408 , G11C11/16 , G11C7/10 , G11C29/02 , G06F13/16 , G11C29/52
Abstract: Systems and methods providing for a parity error synchronization based on a programmed parity latency value by delaying an activation of a command disable signal to disable internal commands such that the command disable signal activates just prior to the parity error command.
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公开(公告)号:US10699768B2
公开(公告)日:2020-06-30
申请号:US16104124
申请日:2018-08-16
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Vijayakrishna J. Vankayala , Jason M. Brown
IPC: G11C11/4076 , G11C11/408
Abstract: Apparatuses and methods for a command decoder delay are disclosed. An example apparatus includes a command decoder which may receive memory access command. The command decoder may provide an output command based on the memory access command to a command path at a first time. The command decoder may also provide the output command to a data path at a second time, wherein the second time is delayed relative to the first time.
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公开(公告)号:US10684797B2
公开(公告)日:2020-06-16
申请号:US16119766
申请日:2018-08-31
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Vijayakrishna J. Vankayala
Abstract: Memory devices and methods utilize pipelines to process or control timing of commands received by the memory device. They may also use tracking circuitry configured to determine whether one or more of the commands are in the pipeline. The tracking circuitry includes an input counter configured to count commands entering into the pipeline and an output counter configured to count commands exiting the pipeline. Furthermore, the tracking circuitry includes comparison circuitry configured to compare values in the input counter and the output counter and to output a command-in-pipeline signal indicative of the one or more commands being in the pipeline when the values in the input counter and the output counter differ.
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公开(公告)号:US10002647B1
公开(公告)日:2018-06-19
申请号:US15442501
申请日:2017-02-24
Applicant: Micron Technology, Inc.
Inventor: Vijayakrishna J. Vankayala
IPC: G11C5/06 , G11C8/10 , H01L25/065
CPC classification number: G11C5/06 , G11C7/10 , G11C7/1048 , G11C7/1063 , G11C8/10 , G11C8/12 , H01L25/0657 , H01L2225/06541
Abstract: Apparatuses and methods for transmitting die state information between a plurality of dies are described. An example apparatus includes: a plurality of dies, wherein each die of the plurality of dies includes a first through electrode and a second through electrode; a first path including the first electrodes of the plurality of dies in series; and a second path including the first electrodes of the plurality of dies in series. The first path transmits first internal state information related to a first state of at least one die of the plurality of dies. The second path transmits second internal state information related to a second state of at least one die of the plurality of dies.
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47.
公开(公告)号:US20240223196A1
公开(公告)日:2024-07-04
申请号:US18607999
申请日:2024-03-18
Applicant: Micron Technology, Inc.
Inventor: Vijayakrishna J. Vankayala
CPC classification number: H03L7/191 , G11C7/1039 , H03K19/20 , H03L7/1976
Abstract: A memory device includes a clock input configured to receive a clock from a host device. The memory device also includes a command input configured to receive command and address bits from the host device. The memory device further includes multiple die stacked in a three-dimensional stack. A first die of the plurality of die includes a first plurality of memory cells and first local control circuitry. The first local circuitry includes division circuitry configured to receive the clock from the clock input, generate a divided clock having a lower frequency than that of the clock, and generate multiple clocks from the divided clock with each of the multiple clocks having a lower frequency than the divided clock. The memory device also includes one or more transmitters configured to transmit the multiple clocks using inter-die interconnects between the multiple die.
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公开(公告)号:US20230395566A1
公开(公告)日:2023-12-07
申请号:US17887372
申请日:2022-08-12
Applicant: Micron Technology, Inc.
Inventor: Vijayakrishna J. Vankayala
IPC: H01L25/065 , H01L25/00 , H01L23/00
CPC classification number: H01L25/0657 , H01L25/50 , H01L24/49 , H01L2224/49107 , H01L2224/4911 , H01L2224/49174 , H01L2224/49421 , H01L2924/1434
Abstract: Systems, methods, and devices related to techniques for repeating inter-die signals within a multi-die package of a memory device are disclosed. The multi-die package includes a memory stack including a first memory die handling interfacing with a host for the package and at least one second memory die coupled to and configured to communicate with the first memory die via an inter-die connection. A technique involves incorporating the use of a multiplexer positioned in front of the transmitter of each die to facilitate repetition of inter-die signals within the memory stack as needed depending on various factors associated with the memory stack, such as, but not limited to, the type of signal, the intended recipient of the inter-die signals, and the stack height of the memory stack.
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公开(公告)号:US11810641B2
公开(公告)日:2023-11-07
申请号:US16926505
申请日:2020-07-10
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Christian N. Mohr , Jennifer E. Taylor , Vijayakrishna J. Vankayala
IPC: G11C7/10 , G11C11/4093 , H03F3/45
CPC classification number: G11C7/1084 , G11C7/1096 , G11C11/4093 , H03F3/45475
Abstract: Apparatuses and methods for trimming input buffers based on identified mismatches. An example apparatus includes an input buffer having a first input stage circuit configured to receive a first signal, a second input stage circuit configured to receive a second signal, and an output stage coupled to the first and second input stage circuits and configured to provide an output signal. The first input stage circuit includes serially-coupled transistor pairs that are each coupled between the output stage and a bias voltage. Each of the plurality of serially-coupled transistors pairs are selectively enabled in response to a respective enable signal. The apparatus further including a trim circuit coupled to the first input stage circuit and comprising a plurality of programmable components. The trim circuit is configured to be programmed to provide the respective enable signals based on a detected transition voltage offset relative to a target transition voltage.
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公开(公告)号:US11742008B2
公开(公告)日:2023-08-29
申请号:US17240921
申请日:2021-04-26
Applicant: Micron Technology, Inc.
Inventor: Jason M. Brown , Vijayakrishna J. Vankayala , Todd A. Dauenbaugh
IPC: G11C7/22
Abstract: A memory device includes a first data driver configured to send according to a first clock signal a first data to a first data port; a second data driver configured to send according to a second clock signal a second data to a second data port, wherein the second clock signal does not match the first clock signal.
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