公开(公告)号：US20120329269A1

公开(公告)日：2012-12-27

申请号：US13602119

申请日：2012-09-01

申请人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

发明人： John C. Arnold ,  Griselda Bonilla ,  William J. Cote ,  Geraud Dubois ,  Daniel C. Edelstein ,  Alfred Grill ,  Elbert Huang ,  Robert D. Miller ,  Satya V. Nitta ,  Sampath Purushothaman ,  E. Todd Ryan ,  Muthumanickam Sankarapandian ,  Terry A. Spooner ,  Willi Volksen

IPC分类号： H01L21/768

CPC分类号： H01L21/76808 ,  H01L21/02063 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31633 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

摘要： Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.

摘要翻译： 提供了最小化或消除对低k和超低k有机硅酸盐金属间电介质层的等离子体损伤的方法。 等离子体损伤的降低通过在合适的点处中断蚀刻和剥离工艺流程来实现，以增加本发明的处理，其保护金属间电介质层免受等离子体条带处理期间的等离子体损伤。 以这种方式减少或消除等离子体损伤区域还能够减少光致抗蚀剂中的线图案和由其形成的金属线之间的线偏压，并且由于在反应性之后的湿清洁而改变线沟槽的线宽 用于形成线沟槽和通孔腔的离子蚀刻。 减少的线偏压对金属互连结构的电产量具有有益的影响。

公开(公告)号：US08252599B2

公开(公告)日：2012-08-28

申请号：US13221608

申请日：2011-08-30

申请人： Steven A. Hofstadler ,  Jared J. Drader ,  Jose R. Gutierrez ,  Paul J. Gleason ,  Rex O. Bare ,  Robert D. Miller ,  Jeffrey C. Smith

发明人： Steven A. Hofstadler ,  Jared J. Drader ,  Jose R. Gutierrez ,  Paul J. Gleason ,  Rex O. Bare ,  Robert D. Miller ,  Jeffrey C. Smith

IPC分类号： C12M1/00 ,  G01N31/00 ,  G01N31/22 ,  G01N9/00

CPC分类号： G01N1/10 ,  G01N1/02 ,  G01N35/0098 ,  G01N35/025 ,  G01N2035/00524

摘要： Sample processing units useful for mixing and purifying materials, such as fluidic materials are provided. A sample processing unit typically includes a container configured to contain a sample comprising magnetically responsive particles, and one or more magnets that are in substantially fixed positions relative to the container. A sample processing unit also generally includes a conveyance mechanism configured to convey the container to and from a position that is within magnetic communication with the magnet, e.g., such that magnetically responsive particles with captured analytes can be retained within the container when other materials are added to and/or removed from the container. Further, a sample processing unit also typically includes a rotational mechanism that is configured to rotate the container, e.g., to effect mixing of sample materials disposed within the container. Related carrier mechanisms, sample processing stations, systems, and methods are also provided.

摘要翻译： 提供了用于混合和净化材料（如流体材料）的样品处理单元。 样品处理单元通常包括被配置为容纳包含磁响应颗粒的样品和相对于容器处于基本固定位置的一个或多个磁体的容器。 样品处理单元还通常包括输送机构，其构造成将容器输送到与磁体磁连通的位置，例如使得当添加其它材料时，具有捕获的分析物的磁响应颗粒可以保留在容器内 到和/或从容器中取出。 此外，样品处理单元还通常包括旋转机构，其被配置为旋转容器，例如以实现设置在容器内的样品材料的混合。 还提供了相关的载体机构，样品处理站，系统和方法。

公开(公告)号：US20110243848A1

公开(公告)日：2011-10-06

申请号：US12750147

申请日：2010-03-30

申请人： Eric Andrew Appel ,  James L. Hedrick ,  Victor Y. Lee ,  Robert D. Miller ,  Joseph Sly

发明人： Eric Andrew Appel ,  James L. Hedrick ,  Victor Y. Lee ,  Robert D. Miller ,  Joseph Sly

IPC分类号： A61K49/00 ,  C08K3/08 ,  A61K9/10

CPC分类号： A61K49/0093 ,  A61K47/32 ,  A61K47/58 ,  A61K47/59 ,  A61K47/593 ,  A61K47/60 ,  A61K49/0036 ,  A61K49/0054 ,  A61K49/0073

摘要： A composition of matter comprising an amphiphilic star polymer, the star polymer comprising a crosslinked microgel core and 6 or more independent polymer arms covalently linked to the core, the 6 or more arms each comprising a hydrophilic polymer chain segment and a hydrophobic polymer chain segment; wherein each individual metal selected from the group consisting of beryllium, magnesium, calcium, strontium, barium, radium, aluminum, gallium, indium, thallium, germanium, tin, lead, arsenic, antimony, bismuth, tellurium, polonium, and metals of Groups 3 to 12 of the Periodic Table has a concentration in the star polymer of greater than or equal to 0 parts per million and less than or equal to 100 parts per million.

摘要翻译： 包含两亲性星形聚合物的物质组合物，所述星形聚合物包含交联的微凝胶核心和共价连接到核心上的6个或更多个独立的聚合物臂，所述6个或更多个臂各自包含亲水性聚合物链段和疏水性聚合物链段; 其中选自组中的铍，镁，钙，锶，钡，镭，铝，镓，铟，铊，锗，锡，铅，砷，锑，铋，碲，onium onium和金属中的每种单独的金属 星形聚合物中的3至12的浓度大于或等于0ppm，小于或等于100ppm。

公开(公告)号：US20090181178A1

公开(公告)日：2009-07-16

申请号：US12355316

申请日：2009-01-16

申请人： Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

发明人： Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

IPC分类号： C23C16/22

CPC分类号： H01L31/103 ,  Y10T428/31663

摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C═C or a [S]n linkage, where n is a defined above.

摘要翻译： 提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k电介质材料，其包括其中一部分C原子键合为Si-CH 3官能团的Si，C，O和H的原子 ，另一部分C原子键合为Si-R-Si，其中R为苯基， - [CH2] n-，其中n大于或等于1，HC-CH，C-CH2，CC或[ S] n连接，其中n是上面定义的。

公开(公告)号：US07521377B2

公开(公告)日：2009-04-21

申请号：US11329560

申请日：2006-01-11

申请人： Stephen M. Gates ,  Alfred Grill ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Nguyen

发明人： Stephen M. Gates ,  Alfred Grill ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Nguyen

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31695 ,  B05D1/60 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351

摘要： A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant.

摘要翻译： 描述了使用至少一种有机硅前体制造具有超低介电常数（或超低k）的介电材料的方法。 本发明中使用的有机硅前体包括含有Si-O结构和牺牲有机基团的分子作为离去基团。 使用含有分子尺度牺牲离去基团的有机硅前体使得能够控制纳米尺度的孔径，控制组成和结构均匀性并简化制造过程。 此外，从单一前体制造电介质膜能够更好地控制膜中的最终孔隙率和较窄的孔径分布，导致在相同的介电常数值下更好的机械性能。

公开(公告)号：US20080277796A1

公开(公告)日：2008-11-13

申请号：US12180010

申请日：2008-07-25

申请人： Stephen M. Gates ,  Robert D. Miller

发明人： Stephen M. Gates ,  Robert D. Miller

IPC分类号： H01L23/48 ,  H01L21/31

CPC分类号： H01L21/02112 ,  H01L21/02205 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A dense boron-based or phosphorus-based dielectric material is provided. Specifically, the present invention provides a dense boron-based dielectric material comprised of boron and at least one of carbon, nitrogen, and hydrogen or a dense phosphorus-based dielectric comprised of phosphorus and nitrogen. The present invention also provides electronic structures containing the dense boron-based or phosphorus-based dielectric as an etch stop, a dielectric Cu capping material, a CMP stop layer, and/or a reactive ion etching mask in a ULSI back-end-of-the-line (BEOL) interconnect structure. A method of forming the inventive boron-based or phosphorus-based dielectric as well as the electronic structure containing the same are also described in the present invention.

摘要翻译： 提供了一种致密的硼基或磷基介电材料。 具体地说，本发明提供由硼和碳，氮和氢中的至少一种构成的致密的硼基介电材料或由磷和氮组成的致密的磷基电介质。 本发明还提供了电子结构，其包含致密的硼基或磷基电介质作为蚀刻停止层，电介质铜封盖材料，CMP停止层和/或ULSI后端的反应离子蚀刻掩模 （BEOL）互连结构。 在本发明中还描述了形成本发明的硼基或磷基电介质的方法以及含有它们的电子结构。

公开(公告)号：US20080188578A1

公开(公告)日：2008-08-07

申请号：US12037507

申请日：2008-02-26

申请人： Craig Jon Hawker ,  James L. Hedrick ,  Robert D. Miller ,  Willi Volksen

发明人： Craig Jon Hawker ,  James L. Hedrick ,  Robert D. Miller ,  Willi Volksen

IPC分类号： C08J9/00 ,  C08G77/00

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/49894 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/024 ,  H05K3/28 ,  Y10S977/773 ,  Y10S977/788 ,  Y10T428/12528 ,  Y10T428/24504 ,  Y10T428/249953 ,  H01L2924/00

摘要： Precursors are provided for dielectric compositions that are useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric compositions are prepared by crosslinking a thermally decomposable porogen to a host polymer via a coupling agent, followed by heating to a temperature suitable to decompose the porogen. The porous materials that result have dielectric constants of less than 2.4.

摘要翻译： 提供了用于制造诸如集成电路器件和集成电路封装器件的电子器件的电介质组合物的前体。 介电组合物是通过将可热分解致孔剂通过偶联剂交联至主体聚合物，然后加热至适于分解致孔剂的温度来制备的。 导致的多孔材料的介电常数小于2.4。

公开(公告)号：US20080182178A1

公开(公告)日：2008-07-31

申请号：US11698182

申请日：2007-01-25

申请人： John A. Hoffnagle ,  David R. Medeiros ,  Robert D. Miller ,  Libor Vycklicky ,  Gregory M. Wallraff

发明人： John A. Hoffnagle ,  David R. Medeiros ,  Robert D. Miller ,  Libor Vycklicky ,  Gregory M. Wallraff

IPC分类号： G03C1/00 ,  G03F1/00

CPC分类号： G03F7/091 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/106 ,  Y10S430/146

摘要： Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organosilicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals “R” and “Y” represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.

摘要翻译： 包含可光漂白有机材料的组合物可以用193nm的光漂白，并且在曝光后通过刺激使其恢复到其初始状态。 （可逆光漂白）。 我们将这些组合物用于本领域已知的对比增强层和作为光致抗蚀剂的一部分，特别是在用于半导体制造的光刻工艺中。 它们可以包括聚合物，例如有机硅聚合物，包含芳族羟基化合物如苯酚和萘酚的聚合物的聚合物，例如苯酚甲醛聚合物和萘酚甲醛聚合物苯乙烯聚合物和酚醛丙烯酸酯聚合物或环状材料，其包含：其中基团“R”和“Y “表示有机或取代的有机部分，结构I，II和III表示碱性有机骨架，并且可以在任何可用的位置被未取代或被任意一个或多个取代基的组合取代。

公开(公告)号：US07309754B2

公开(公告)日：2007-12-18

申请号：US10673052

申请日：2003-09-26

申请人： Phillip Joe Brock ,  Michael W. Chaw ,  Dan Dawson ,  Craig Hawker ,  James L. Hedrick ,  Teddie P. Magbitang ,  Dennis McKean ,  Robert D. Miller ,  Richard I. Palmisano ,  Willi Volksen

发明人： Phillip Joe Brock ,  Michael W. Chaw ,  Dan Dawson ,  Craig Hawker ,  James L. Hedrick ,  Teddie P. Magbitang ,  Dennis McKean ,  Robert D. Miller ,  Richard I. Palmisano ,  Willi Volksen

IPC分类号： C08G73/00 ,  C08G73/08 ,  C08G59/00

CPC分类号： G11B5/102

摘要： An encapsulant fluid is provided comprising a mixture of a diene-containing compound and a dienophilic compound. At least one of the diene-containing and the dienophilic compounds is protected so that the compounds do not substantially react with each other at room temperature. The diene-containing and the dienophilic compounds undergo a reversible Diels-Alder polymerization reaction at a polymerization temperature above room temperature to form a solid debondable polymeric encapsulant. Also provided are methods for forming slider assemblies and methods for patterning a slider surface using the encapsulant.

摘要翻译： 提供了包含含二烯的化合物和二亲性化合物的混合物的密封剂流体。 至少一种含二烯和二亲性化合物被保护，使得化合物在室温下基本上不会彼此反应。 含二烯和二亲性化合物在聚合温度高于室温的条件下进行可逆的狄尔斯 - 阿尔德聚合反应，形成固体可分散的聚合物密封剂。 还提供了用于形成滑块组件的方法和使用该密封剂来构图滑块表面的方法。

公开(公告)号：US06828059B2

公开(公告)日：2004-12-07

申请号：US10224117

申请日：2002-08-20

申请人： Robert D. Miller ,  Tina L. Urso ,  Paul T. Hallifax

发明人： Robert D. Miller ,  Tina L. Urso ,  Paul T. Hallifax

IPC分类号： H01M400

CPC分类号： H01M4/02 ,  H01M2/0217 ,  H01M10/0431 ,  H01M10/05

摘要： An electrode assembly constructed of continuous anode and cathode electrodes that are overlaid in overlapping fashion and wound into a cell stack suitable for prismatic and cuboidal-shaped cases. The cathode electrode strip has some regions where the electrode material is pressed to a high density and has some regions where the active material is substantially removed from the current collector screen.

摘要翻译： 由连续阳极和阴极电极构成的电极组件，其以重叠的方式重叠并缠绕成适用于棱柱形和立方形状的电池组。 阴极电极带具有一些区域，其中电极材料被压制到高密度并且具有一些区域，其中活性材料基本上从集电器屏幕移除。