公开(公告)号：US20080023732A1

公开(公告)日：2008-01-31

申请号：US11829438

申请日：2007-07-27

Applicant: SUSAN FELCH ,  Gregg Higashi

Inventor： SUSAN FELCH ,  Gregg Higashi

IPC: H01L29/94 ,  H01L21/425

CPC classification number: H01L21/26506 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/324 ,  H01L29/6659 ,  H01L29/7833

Abstract: Embodiments of the present invention include methods for forming an ultra-shallow junction in a substrate. In one embodiment, the method includes providing a silicon substrate, co-implanting the silicon substrate with carbon and a dopant to form a doped silicon substrate, and exposing the silicon substrate to a short time thermal anneal. In certain embodiments, the silicon substrate is exposed to a rapid thermal anneal after co-implanting the silicon substrate but prior to exposing the silicon substrate to a short time thermal anneal. In certain embodiments, the pre-amorphization implant is performed on the silicon substrate prior to implanting the silicon substrate with carbon and a dopant. In certain embodiments, the silicon substrate is a monocrystalline silicon substrate.

Abstract translation: 本发明的实施例包括在衬底中形成超浅结的方法。 在一个实施例中，该方法包括提供硅衬底，将硅衬底与碳和掺杂剂共注入以形成掺杂硅衬底，以及将硅衬底暴露于短时间热退火。 在某些实施例中，在共同植入硅衬底之后但在将硅衬底暴露于短时间热退火之前，硅衬底暴露于快速热退火。 在某些实施例中，在用碳和掺杂剂注入硅衬底之前，在硅衬底上进行预非晶化注入。 在某些实施例中，硅衬底是单晶硅衬底。

公开(公告)号：US20050260347A1

公开(公告)日：2005-11-24

申请号：US10851561

申请日：2004-05-21

Applicant: Pravin Narwankar ,  Gregg Higashi

Inventor： Pravin Narwankar ,  Gregg Higashi

IPC: C23C16/30 ,  H01L21/314 ,  C23C16/00

CPC classification number: H01L21/3141 ,  C23C16/401 ,  H01L21/3143

Abstract: In one embodiment, a method for depositing a capping layer on a dielectric layer in a process chamber is provided which includes depositing the dielectric layer on a substrate surface, depositing a silicon-containing layer by an ALD process, comprising alternately pulsing a silicon precursor and an oxidizing gas into the process chamber, and exposing the silicon-containing layer to a nitridation process. In another embodiment, a method for depositing a silicon-containing capping layer on a dielectric layer in a process chamber by an ALD process is provided which includes flowing a silicon precursor into the process chamber, purging the process chamber with a purge gas, flowing an oxidizing gas comprising water formed by flowing a H2 gas and an oxygen-containing gas through a water vapor generator, and purging the process chamber with the purge gas.

Abstract translation: 在一个实施例中，提供了一种用于在处理室中的电介质层上沉积覆盖层的方法，其包括在基底表面上沉积电介质层，通过ALD工艺沉积含硅层，包括交替地脉冲硅前体和 氧化气体进入处理室，并将含硅层暴露于氮化过程。 在另一个实施例中，提供了一种通过ALD工艺在处理室中的电介质层上沉积含硅覆盖层的方法，其包括使硅前体流入处理室，用净化气体吹扫处理室， 包括通过使H 2气体和含氧气体流过水蒸气发生器而形成的水的氧化气体，以及用吹扫气体吹扫处理室。

公开(公告)号：US09175393B1

公开(公告)日：2015-11-03

申请号：US13222890

申请日：2011-08-31

Applicant: Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington ,  Andreas Hegedus

Inventor： Gregg Higashi ,  Khurshed Sorabji ,  Lori D. Washington ,  Andreas Hegedus

IPC: C23C16/50 ,  H01L21/306 ,  C23F1/00 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67115 ,  H01L21/6776

Abstract: A showerhead for a semiconductor-processing reactor formed by an array of showerhead tiles. Each showerhead tile has a plurality of process gas apertures, which may be in a central area of the tile or may extend over the entire tile. Each showerhead tile can be dimensioned for processing a respective substrate or the array can be dimensioned for processing a substrate. An exhaust region surrounds the process gas apertures. The exhaust region has at least one exhaust aperture, and may include an exhaust slot, a plurality of connected exhaust slots or a plurality of exhaust apertures. The exhaust region surrounds the array of showerhead tiles, or a respective portion of the exhaust region surrounds the plurality of process gas apertures in each showerhead tile or group of showerhead tiles. A gas curtain aperture may be between the exhaust region and the process gas apertures of one of the showerhead tiles or adjacent to the central area of the tile.

Abstract translation: 一种用于由喷头瓦片阵列形成的半导体处理反应器的喷头。 每个喷头瓦具有多个处理气体孔口，其可以在瓦片的中心区域中，或者可以在整个瓦片上延伸。 每个喷头砖的尺寸可以被设计用于处理相应的基板，或者该阵列的尺寸可以用于处理基板。 排气区围绕工艺气体孔。 排气区域具有至少一个排气孔，并且可以包括排气槽，多个连接的排气槽或多个排气孔。 排气区域围绕阵列的喷头瓦片，或者排气区域的相应部分围绕每个喷头瓦片或一组喷头瓦片中的多个处理气体孔。 气幕孔可以在排气区域和淋浴喷头瓦片之一的邻近瓦片的中心区域的处理气体孔之间。

公开(公告)号：US09070764B2

公开(公告)日：2015-06-30

申请号：US12475406

申请日：2009-05-29

Applicant: Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

Inventor： Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

IPC: H01L21/78 ,  H01L21/683

CPC classification number: H01L21/7813 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L2221/6835 ,  H01L2221/68381

Abstract: Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a flattened, pre-curved support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process includes bending the pre-curved support handle to have substantial curvature while peeling the epitaxial material from the substrate and forming an etch crevice therebetween. Compression is maintained within the epitaxial material during the etching process. The flattened, pre-curved support handle may be formed by flattening a pre-curved support material.

Abstract translation: 本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。 在一个实施例中，提供了一种用于形成ELO薄膜的方法，其包括在衬底上的牺牲层上沉积外延材料，将平坦化的预弯曲支撑手柄粘附到外延材料上，以及在蚀刻期间去除牺牲层 处理。 蚀刻工艺包括弯曲预弯曲的支撑手柄以具有相当大的曲率，同时从衬底剥离外延材料并在其间形成蚀刻缝隙。 在蚀刻过程中压缩保持在外延材料内。 扁平的预弯曲的支撑手柄可以通过使预弯曲的支撑材料变平而形成。

公开(公告)号：US09029687B2

公开(公告)日：2015-05-12

申请号：US12605151

申请日：2009-10-23

Applicant: Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

Inventor： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC: H01L31/00 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0735 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035281 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

Abstract: Methods and apparatus for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells are provided. A photovoltaic (PV) device generally includes a window layer; an absorber layer disposed below the window layer such that electrons are generated when photons travel through the window layer and are absorbed by the absorber layer; and a plurality of contacts for external connection coupled to the absorber layer, such that all of the contacts for external connection are disposed below the absorber layer and do not block any of the photons from reaching the absorber layer through the window layer. Locating all the contacts on the back side of the PV device avoids solar shadows caused by front side contacts, typically found in conventional solar cells. Therefore, PV devices described herein with back side contacts may allow for increased efficiency when compared to conventional solar cells.

Abstract translation: 提供了与常规太阳能电池相比，用于将电磁辐射如太阳能转换成电能的方法和装置，其效率提高。 光伏（PV）装置通常包括窗口层; 设置在窗口层下方的吸收层，使得当光子穿过窗口层并被吸收层吸收时，产生电子; 以及多个用于连接到吸收层的外部连接的触点，使得用于外部连接的所有触点都设置在吸收层下方，并且不阻挡任何光子通过窗口层到达吸收层。 定位PV设备背面的所有触点避免了由常规太阳能电池中常见的前端触点引起的太阳阴影。 因此，与传统的太阳能电池相比，具有背面接触的本文描述的PV器件可以提高效率。

公开(公告)号：US08895845B2

公开(公告)日：2014-11-25

申请号：US12940861

申请日：2010-11-05

Applicant: Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

Inventor： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC: H01L31/00 ,  H01L31/0304 ,  H01L31/0236 ,  H01L31/0735

CPC classification number: H01L31/0304 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03046 ,  H01L31/065 ,  H01L31/0682 ,  H01L31/0693 ,  H01L31/0735 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/544

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

Abstract translation: 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 根据本发明的实施例的光伏（PV）单元可以具有通过外延剥离（ELO）制造的非常薄的吸收层，所有电触点位于PV装置的背面以避免阴影，和/或 使用扩散器和反射器的前侧和后侧光捕获以增加入射到PV单元的前侧的光子的吸收。 可以将多个PV单元组合成PV组，并且可以将PV组阵列连接以形成具有在低温下施加的薄金属或导电聚合物的PV模块。 与常规太阳能电池相比，这样的创新可以允许PV装置的更高的效率和灵活性。

公开(公告)号：US08686284B2

公开(公告)日：2014-04-01

申请号：US12605140

申请日：2009-10-23

Applicant: Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

Inventor： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC: H01L31/00

CPC classification number: H01L31/0735 ,  H01L31/02168 ,  Y02E10/544

Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) device may incorporate front side and/or back side light trapping techniques in an effort to absorb as many of the photons incident on the front side of the PV device as possible in the absorber layer. The light trapping techniques may include a front side antireflective coating, multiple window layers, roughening or texturing on the front and/or the back sides, a back side diffuser for scattering the light, and/or a back side reflector for redirecting the light into the interior of the PV device. With such light trapping techniques, more light may be absorbed by the absorber layer for a given amount of incident light, thereby increasing the efficiency of the PV device.

Abstract translation: 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 光伏（PV）装置可以包括前侧和/或后侧光捕获技术，以尽量吸收在吸收层中尽可能多地入射到PV装置的前侧的光子。 光捕获技术可以包括前侧防反射涂层，多个窗口层，在前侧和/或后侧上的粗糙化或纹理化，用于散射光的后侧扩散器和/或用于将光重定向到的后侧反射器 PV设备的内部。 通过这种光捕获技术，对于给定量的入射光，更多的光可以被吸收层吸收，从而提高PV器件的效率。

公开(公告)号：US20100212591A1

公开(公告)日：2010-08-26

申请号：US12725332

申请日：2010-03-16

Applicant: Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

Inventor： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

IPC: C23C16/00

CPC classification number: C23C16/4583 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/481 ,  C23C16/54 ,  C30B25/025 ,  C30B25/14 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/6776 ,  H01L21/67784

Abstract: Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a reactor lid assembly for vapor deposition is provided which includes a first showerhead assembly and an isolator assembly disposed next to each other on a lid support, and a second showerhead assembly and an exhaust assembly disposed next to each other on the lid support, wherein the isolator assembly is disposed between the first and second showerhead assemblies and the second showerhead assembly is disposed between the isolator assembly and the exhaust assembly.

Abstract translation: 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了一种用于气相沉积的反应器盖组件，其包括在盖支撑件上彼此相邻设置的第一淋浴器组件和隔离器组件，以及在盖子上彼此相邻设置的第二淋浴喷头组件和排气组件 支撑件，其中隔离器组件设置在第一和第二喷头组件之间，并且第二喷头组件设置在隔离器组件和排气组件之间。

公开(公告)号：US20100206235A1

公开(公告)日：2010-08-19

申请号：US12725308

申请日：2010-03-16

Applicant: Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

Inventor： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

IPC: C23C16/458 ,  C23C16/00

CPC classification number: C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/54 ,  C30B25/025 ,  C30B25/12 ,  C30B29/40 ,  C30B29/42 ,  C30B35/005 ,  H01L21/67115 ,  H01L21/67784

Abstract: Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a wafer carrier track for levitating and traversing a wafer carrier within a vapor deposition reactor system is provided which includes upper and lower sections of a track assembly having a gas cavity formed therebetween. A guide path extends along an upper surface of the upper section and between two side surfaces which extend along and above the guide path and parallel to each other. A plurality of gas holes along the guide path extends from the upper surface of the upper section, through the upper section, and into the gas cavity. In some examples, the upper and lower sections of the track assembly may independently contain quartz, and in some examples, may be fused together.

Abstract translation: 本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。 在一个实施例中，提供了用于在气相沉积反应器系统内悬浮和横穿晶片载体的晶片载体轨道，其包括在其间形成有气体腔的轨道组件的上部和下部。 引导路径沿着上部的上表面延伸并且在引导路径上并且彼此平行的两个侧表面之间延伸。 沿着引导路径的多个气孔从上部的上表面延伸穿过上部并进入气体腔。 在一些示例中，轨道组件的上部和下部可以独立地包含石英，并且在一些示例中可以将其熔合在一起。

公开(公告)号：US20100126572A1

公开(公告)日：2010-05-27

申请号：US12605151

申请日：2009-10-23

Applicant: Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

Inventor： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

IPC: H01L31/0304 ,  H01L31/00 ,  H01L31/0232 ,  H01L31/02

CPC classification number: H01L31/022458 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035281 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

Abstract: Methods and apparatus for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells are provided. A photovoltaic (PV) device generally includes a window layer; an absorber layer disposed below the window layer such that electrons are generated when photons travel through the window layer and are absorbed by the absorber layer; and a plurality of contacts for external connection coupled to the absorber layer, such that all of the contacts for external connection are disposed below the absorber layer and do not block any of the photons from reaching the absorber layer through the window layer. Locating all the contacts on the back side of the PV device avoids solar shadows caused by front side contacts, typically found in conventional solar cells. Therefore, PV devices described herein with back side contacts may allow for increased efficiency when compared to conventional solar cells.

Abstract translation: 提供了与常规太阳能电池相比，用于将电磁辐射如太阳能转换成电能的方法和装置，其效率提高。 光伏（PV）装置通常包括窗口层; 设置在窗口层下方的吸收层，使得当光子穿过窗口层并被吸收层吸收时，产生电子; 以及多个用于连接到吸收层的外部连接的触点，使得用于外部连接的所有触点都设置在吸收层下方，并且不阻挡任何光子通过窗口层到达吸收层。 定位PV装置背面的所有触点避免了由常规太阳能电池中常见的前侧触点造成的太阳阴影。 因此，与常规太阳能电池相比，具有背面接触的本文描述的PV器件可以增加效率。