-
公开(公告)号：US10020089B2
公开(公告)日：2018-07-10
申请号：US14822551
申请日：2015-08-10
发明人： Jun Hatakeyama , Koji Hasegawa , Takayuki Nagasawa
CPC分类号： H01B1/124 , C08F8/36 , C08F12/08 , C08F212/08 , C08G2261/1452 , C08G2261/146 , C08G2261/722 , C08L25/08 , C08L25/18 , C08L33/10 , H01B1/125 , H01B1/127 , H01B1/128
摘要： The present invention provides a conductive polymer composite including (A) a π-conjugated polymer and (B) a dopant polymer which contains a repeating unit “a” represented by the following general formula (1) and has a weight-average molecular weight in the range of 1,000 to 500,000, wherein R1 represents a hydrogen atom or a methyl group; R2 represents a fluorine atom or a trifluoromethyl group; Z represents a single bond or —C(═O)—O—; “m” is an integer of 1 to 4; and “a” is a number satisfying 0
-
公开(公告)号：US09904172B2
公开(公告)日：2018-02-27
申请号：US14961046
申请日：2015-12-07
发明人： Kentaro Kumaki , Satoshi Watanabe , Koji Hasegawa , Daisuke Domon , Kenji Yamada
IPC分类号： G03F7/40 , C08L25/08 , C08L33/14 , C08L25/18 , C08F220/30 , C08F220/34 , C08F220/26 , C08F226/06 , C08F226/02 , G03F7/11 , C08F220/36 , G03F7/004 , G03F7/039 , G03F7/32 , C08F220/28 , G03F7/20
CPC分类号： G03F7/40 , C08F220/26 , C08F220/30 , C08F220/34 , C08F220/36 , C08F226/02 , C08F226/06 , C08F2220/283 , C08F2220/285 , C08L25/08 , C08L25/18 , C08L33/14 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2004 , G03F7/2041 , G03F7/325
摘要： A shrink material is provided comprising a specific polymer and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern.
-
公开(公告)号：US09829792B2
公开(公告)日：2017-11-28
申请号：US15204145
申请日：2016-07-07
发明人： Koji Hasegawa , Jun Hatakeyama , Teppei Adachi
IPC分类号： G03F7/004 , G03F7/38 , C07C69/54 , C07C69/73 , C08F220/18 , C08F220/30 , G03F7/039 , C08F128/06 , C08F116/10 , C08F116/14 , C08F124/00 , C08F116/36 , G03F7/16 , G03F7/20 , G03F7/32 , C07D307/00 , C07C69/76 , C07C69/86
CPC分类号： G03F7/0392 , C07C69/54 , C07C69/73 , C07C69/76 , C07C69/86 , C07C2601/08 , C07C2601/14 , C07C2603/74 , C07D307/00 , C08F116/10 , C08F116/14 , C08F116/36 , C08F124/00 , C08F128/06 , C08F220/18 , C08F220/30 , C08F2220/302 , G03F7/0045 , G03F7/0046 , G03F7/039 , G03F7/0397 , G03F7/085 , G03F7/168 , G03F7/2002 , G03F7/322 , G03F7/38
摘要： A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.
-
公开(公告)号：US09758609B2
公开(公告)日：2017-09-12
申请号：US14972612
申请日：2015-12-17
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , C08F220/28 , C08F220/20 , C08F224/00 , C07C69/54
CPC分类号： C08F224/00 , C07C69/54 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C08F220/20 , C08F220/28 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , C08F220/22 , C08F2220/283 , C08F2220/382 , C08F212/04 , C08F212/32
摘要： A monomer having a plurality of tertiary alcoholic hydroxyl groups is provided. A useful polymer is obtained by polymerizing the monomer. From a resist composition comprising the polymer, a negative pattern which is insoluble in alkaline developer and has high etch resistance is formed at a high resolution.
-
公开(公告)号：US20170226252A1
公开(公告)日：2017-08-10
申请号：US15426227
申请日：2017-02-07
发明人： Masayoshi Sagehashi , Masahiro Fukushima , Koji Hasegawa , Teppei Adachi , Kazuhiro Katayama , Jun Hatakeyama
IPC分类号： C08F222/20 , C08F220/28 , G03F7/004 , G03F7/32 , G03F7/16 , G03F7/20 , G03F7/38 , C07C69/675 , G03F7/038
CPC分类号： C08F222/20 , C07C69/675 , C07C381/12 , C07C2601/14 , C07C2603/14 , C07C2603/74 , C08F220/18 , C08F220/24 , C08F220/28 , C08F220/30 , C08F2220/283 , G03F7/0045 , G03F7/0046 , G03F7/038 , G03F7/0388 , G03F7/0397 , G03F7/162 , G03F7/168 , G03F7/2004 , G03F7/322 , G03F7/38
摘要： A monomer having a substituent group capable of polarity switch under the action of acid is provided. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high resolution and etch resistance which is insoluble in alkaline developer.
-
公开(公告)号：US09720324B2
公开(公告)日：2017-08-01
申请号：US15210025
申请日：2016-07-14
发明人： Jun Hatakeyama , Koji Hasegawa
IPC分类号： G03F7/004 , G03F7/30 , C08F18/20 , C08F220/28 , C08F220/60 , C08F224/00 , C08F226/02 , C08F228/02 , C08F228/06 , G03F7/039 , C08F222/40 , C08F222/20 , C08F216/14 , G03F7/16 , G03F7/20 , G03F7/32
CPC分类号： G03F7/0392 , C08F18/20 , C08F216/1416 , C08F220/18 , C08F220/28 , C08F220/60 , C08F222/20 , C08F222/40 , C08F224/00 , C08F226/02 , C08F226/06 , C08F228/02 , C08F228/06 , C08F2222/404 , C08F2222/408 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/085 , G03F7/162 , G03F7/168 , G03F7/2041 , G03F7/2053 , G03F7/30 , G03F7/325 , C08F2220/283 , C08F2220/1891 , C08F2220/1866 , C08F220/20 , C08F2220/1841 , C08F220/24 , C09D133/10 , C08L33/16 , C09D139/04 , C09D143/02
摘要： A resist composition is provided comprising a polymer comprising recurring units (a) having an oxazolidinedione, thioxooxazolidinone, thiazolidinedione or thioxothiazolidinone structure and recurring unit (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group. The resist composition suppresses acid diffusion, exhibits a high resolution, and forms a pattern of satisfactory profile with low edge roughness.
-
47.发明申请公开(公告)号：US20170008982A1
公开(公告)日：2017-01-12
申请号：US15204145
申请日：2016-07-07
发明人： Koji Hasegawa , Jun Hatakeyama , Teppei Adachi
IPC分类号： C08F128/06 , C08F116/14 , C08F124/00 , C08F116/36 , C07C69/76 , G03F7/16 , G03F7/20 , G03F7/32 , C07C69/54 , C07D307/00 , C08F116/10 , G03F7/039
CPC分类号： G03F7/0392 , C07C69/54 , C07C69/73 , C07C69/76 , C07C69/86 , C07C2601/08 , C07C2601/14 , C07C2603/74 , C07D307/00 , C08F116/10 , C08F116/14 , C08F116/36 , C08F124/00 , C08F128/06 , C08F220/18 , C08F220/30 , C08F2220/302 , G03F7/0045 , G03F7/0046 , G03F7/039 , G03F7/0397 , G03F7/085 , G03F7/168 , G03F7/2002 , G03F7/322 , G03F7/38
摘要： A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.
摘要翻译： 在正性抗蚀剂组合物，特别是化学增强的正性抗蚀剂组合物中，使用衍生自具有两个具有羟基被酸不稳定基取代的羟基苯基的具有羟基苯基的可聚合单体的重复单元的聚合物。 抗蚀剂组合物形成抗蚀剂膜，其通过光刻加工成具有高分辨率，最小边缘粗糙度和耐蚀刻性的良好轮廓的图案。
-
48.发明授权Silicone structure-bearing polymer, negative resist composition, photo-curable dry film, patterning process, and electric/electronic part-protecting film 有权含有硅氧烷结构的聚合物，负性抗蚀剂组合物，光固化型干膜，图案化工艺以及电子/电子部件保护膜公开(公告)号：US09377689B2
公开(公告)日：2016-06-28
申请号：US14807072
申请日：2015-07-23
IPC分类号： G03F7/075 , C08G77/52 , G03F7/40 , G03F7/38 , C07C39/21 , C09D183/14 , C08L83/14 , H01L21/312 , C08G77/12 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/038 , G03F7/09 , G03F7/11
CPC分类号： G03F7/0757 , C07C39/21 , C08G77/12 , C08G77/52 , C08L83/14 , C09D183/14 , G03F7/038 , G03F7/0382 , G03F7/09 , G03F7/11 , G03F7/168 , G03F7/2002 , G03F7/2037 , G03F7/32 , G03F7/38 , G03F7/40 , H01L21/312 , H01L21/321
摘要： A silicone structure-bearing polymer comprising recurring units derived from a bis(4-hydroxy-3-allylphenyl) derivative and having a Mw of 3,000-500,000 is provided. A chemically amplified negative resist composition comprising the polymer overcomes the stripping problem that a coating is stripped from metal wirings of Cu or Al, electrodes, and SiN substrates.
摘要翻译： 提供了含有衍生自双（4-羟基-3-烯丙基苯基）衍生物并具有3,000-500,000的Mw的重复单元的含硅结构的聚合物。 包含该聚合物的化学放大型负性抗蚀剂组合物克服了从Cu或Al，电极和SiN衬底的金属布线剥离涂层的剥离问题。
-
公开(公告)号：US20160179002A1
公开(公告)日：2016-06-23
申请号：US14972612
申请日：2015-12-17
IPC分类号： G03F7/038 , C08F224/00 , C07C69/593 , C08F220/68 , C07C69/013 , C07C69/54
CPC分类号： C08F224/00 , C07C69/54 , C07C2601/14 , C07C2602/42 , C07C2603/74 , C08F220/20 , C08F220/28 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , C08F220/22 , C08F2220/283 , C08F2220/382 , C08F212/04 , C08F212/32
摘要： A monomer having a plurality of tertiary alcoholic hydroxyl groups is provided. A useful polymer is obtained by polymerizing the monomer. From a resist composition comprising the polymer, a negative pattern which is insoluble in alkaline developer and has high etch resistance is formed at a high resolution.
摘要翻译： 提供具有多个叔醇羟基的单体。 通过聚合单体获得有用的聚合物。 从包含聚合物的抗蚀剂组合物，以高分辨率形成不溶于碱性显影剂并具有高耐蚀刻性的负型图案。
-
公开(公告)号：US09335632B2
公开(公告)日：2016-05-10
申请号：US14330272
申请日：2014-07-14
发明人： Jun Hatakeyama , Koji Hasegawa
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03F7/38 , G03F7/20 , C08F220/18 , C08F220/30 , C08F220/22 , C08F220/62
CPC分类号： G03F7/039 , C08F220/18 , C08F220/22 , C08F220/30 , C08F220/62 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/085 , G03F7/2002 , G03F7/2037 , G03F7/2041 , G03F7/38 , C08F2220/301 , C08F2220/382 , C08F2220/185
摘要： A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl and/or phenolic hydroxyl group substituted with an acid labile group and recurring units of tert-butyl or tert-amyl-substituted hydroxyphenyl methacrylate and having a weight average molecular weight of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure.
摘要翻译： 提供了一种正性抗蚀剂组合物，其包含聚合物，其包含具有被酸不稳定基团取代的羧基和/或酚羟基的重复单元和叔丁基或叔戊基取代的羟基苯基甲基丙烯酸酯的重复单元，并且具有重均分子量 1,000-500,000。 抗蚀剂组合物具有抑制酸扩散和高分辨率的令人满意的效果，并且在曝光后形成良好轮廓和最小边缘粗糙度的图案。
-
-
-
-
-
-
-
-
-
搜索结果
151 条记录 (耗时 0.044 秒)
