公开(公告)号：US08142606B2

公开(公告)日：2012-03-27

申请号：US11759542

申请日：2007-06-07

申请人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： C23C16/45565 ,  H01L31/182 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/546 ,  Y02P70/521

摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.

摘要翻译： 提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。 在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中的基板支撑件，并且被配置为在其上支撑四边形基板，以及布置在处理室中的基板支撑件上方的气体分配板 其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。

公开(公告)号：US20110241892A1

公开(公告)日：2011-10-06

申请号：US13042408

申请日：2011-03-07

申请人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

发明人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

IPC分类号： G08B21/00 ,  G01R13/14

CPC分类号： H01J37/32174 ,  H01J37/32935 ,  H03H7/40

摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.

摘要翻译： 通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。 在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。 在第二方面，第二对下限和上限不适合电源的频率。 两个方面优选一起用于检测异常状况的不同出现。

公开(公告)号：US20080132080A1

公开(公告)日：2008-06-05

申请号：US11607702

申请日：2006-12-01

申请人： Suhail Anwar ,  Chung-Hee Park ,  Beom Soo Park ,  Han Byoul Kim ,  Soo Young Choi ,  John M. White

发明人： Suhail Anwar ,  Chung-Hee Park ,  Beom Soo Park ,  Han Byoul Kim ,  Soo Young Choi ,  John M. White

IPC分类号： H01L21/31

CPC分类号： H01L21/02274 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3185 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67236 ,  H01L29/66765 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of PECVD deposition of silicon-containing films has been discovered and further developed. The method is particularly useful when the films are deposited on substrates having surface areas which are larger than 25,000 cm2. The method prevents the deposition of partially reacted silicon-containing species which form a powdery material or haze (contaminant compound) on the substrate surface. The contaminant compounds are avoided by assuring that the power applied to form a plasma in the PECVD process is maintained, at least at a minimal level, until reactive silicon-containing precursor gases present above the surface of the substrate have been reacted or evacuated from the plasma processing area.

摘要翻译： 已经发现并进一步开发了含硅膜的PECVD沉积方法。 当膜沉积在具有大于25,000cm 2的表面积的基底上时，该方法特别有用。 该方法防止在基材表面上沉积形成粉末状物质或雾度（污染物化合物）的部分反应的含硅物质。 通过确保在PECVD工艺中施加以形成等离子体的功率至少保持最小水平，直到存在于衬底表面上方的反应性含硅前体气体已经从 等离子处理区。

公开(公告)号：US20080074255A1

公开(公告)日：2008-03-27

申请号：US11682290

申请日：2007-03-05

申请人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

发明人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

IPC分类号： G08B21/00

CPC分类号： H01J37/32174 ,  H01J37/32935 ,  H03H7/40

摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.

摘要翻译： 通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。 在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。 在第二方面，第二对下限和上限不适合电源的频率。 两个方面优选一起用于检测异常状况的不同出现。

公开(公告)号：US08674844B2

公开(公告)日：2014-03-18

申请号：US12661699

申请日：2010-03-19

申请人： Beom Soo Park ,  Hong Soon Kim ,  Soo Young Choi ,  James Hoffman ,  Suhail Anwar ,  John M. White

发明人： Beom Soo Park ,  Hong Soon Kim ,  Soo Young Choi ,  James Hoffman ,  Suhail Anwar ,  John M. White

IPC分类号： G08B21/00

CPC分类号： H01J37/32183 ,  H01J37/32935 ,  H01J37/3299

摘要： Malfunction of a component within an RF-powered plasma chamber is detected by observing an operating condition of the plasma chamber and detecting when the operating condition deviates from a previously observed range bounded by lower and upper limits. The lower and upper limits are determined by observing the minimum and maximum values of that operating condition during the processing of workpieces throughout one or more plasma chamber cleaning cycles immediately preceding the most recent cleaning of the plasma chamber.

摘要翻译： 通过观察等离子体室的操作状态并检测何时操作条件偏离由下限和上限限定的先前观察范围，来检测RF供电的等离子体室内部件的故障。 通过在紧邻等离子体室的最近清洁之前的一个或多个等离子体室清洁循环期间观察工件处理期间该操作条件的最小值和最大值来确定下限和上限。

公开(公告)号：US08361549B2

公开(公告)日：2013-01-29

申请号：US13315366

申请日：2011-12-09

申请人： Dong-Kil Yim ,  John M. White ,  Soo Young Choi ,  Han Byoul Kim ,  Jin Man Ha ,  Beom Soo Park

发明人： Dong-Kil Yim ,  John M. White ,  Soo Young Choi ,  Han Byoul Kim ,  Jin Man Ha ,  Beom Soo Park

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： C23C16/4401 ,  C23C14/02 ,  C23C14/564 ,  C23C16/0209 ,  H01J2237/2001

摘要： A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.

摘要翻译： 公开了一种防止处理室内的颗粒污染的方法。 预处理室内的衬底可能引起热泳效应，使得室内未附着于表面的颗粒可能不会停留在衬底上。 增加衬底温度的一种方法是等离子体加载衬底。 等离子体负载包括向衬底提供惰性气体等离子体以加热衬底。 提高衬底温度的另一种方法是加载衬底的高压。 高压负载包括加热衬底，同时将腔室压力提高到约1托和约10托之间。 通过在基板处理之前快速增加处理室内的基板温度，不太可能发生颗粒污染。

公开(公告)号：US08147614B2

公开(公告)日：2012-04-03

申请号：US12794756

申请日：2010-06-06

申请人： John M. White ,  Carl Sorensen ,  Robin Tiner ,  Beom Soo Park ,  Soo Young Choi

发明人： John M. White ,  Carl Sorensen ,  Robin Tiner ,  Beom Soo Park ,  Soo Young Choi

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/45591 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449

摘要： Embodiments of the disclosure generally provide a method and apparatus for processing a substrate in a vacuum process chamber. In one embodiment a vacuum process chamber is provided that includes a chamber body and lid disposed on the chamber body. A blocker plate is coupled to the lid and bounds a staging plenum therewith. A gas distribution plate is coupled to the lid. The gas distribution plate separates a main plenum defined between the gas distribution plate and the blocker plate from a process volume defined within the chamber body. The gas distribution plate and the blocker plate define a spacing gradient therebetween which influences mixing of gases within the main plenum.

摘要翻译： 本公开的实施例通常提供用于在真空处理室中处理衬底的方法和装置。 在一个实施例中，提供真空处理室，其包括设置在室主体上的室主体和盖。 阻挡板联接到盖子并且与其分隔起来。 气体分配板联接到盖子上。 气体分配板将限定在气体分配板和阻挡板之间的主增压室与室主体内限定的过程体积分开。 气体分配板和阻挡板限定了它们之间的间隔梯度，其影响主增压室内气体的混合。

公开(公告)号：US07902991B2

公开(公告)日：2011-03-08

申请号：US11682290

申请日：2007-03-05

申请人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

发明人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

IPC分类号： G08B21/00

CPC分类号： H01J37/32174 ,  H01J37/32935 ,  H03H7/40

摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.

摘要翻译： 通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。 在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。 在第二方面，第二对下限和上限不适合电源的频率。 两个方面优选一起用于检测异常状况的不同出现。

公开(公告)号：US07732010B2

公开(公告)日：2010-06-08

申请号：US11406136

申请日：2006-04-18

申请人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  Robert I. Greene ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

发明人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  Robert I. Greene ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

IPC分类号： C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/4581 ,  C25D11/04 ,  C25D11/16 ,  C25D11/18

摘要： A method for supporting a glass substrate comprising providing a substrate support having an aluminum body, a substrate contact area formed on the surface of the substrate support, wherein the process of forming the substrate contact area comprises forming an anodization layer on a surface region of the aluminum body, the coating having a thickness of between about 0.3 mils and about 2.16 mils, wherein the surface region substantially corresponds to the substrate contact area, and preparing the anodization layer disposed over the surface region to a surface roughness between about 88 micro-inches and about 230 micro-inches, followed by anodizing the substrate surface to said thickness, positioning the substrate support adjacent a substrate processing region in a substrate processing chamber, wherein the substrate contact area is adjacent the substrate processing region, positioning the glass substrate on the substrate contact area.

摘要翻译： 一种用于支撑玻璃基板的方法，包括提供具有铝体的基板支撑件，形成在所述基板支撑件的表面上的基板接触区域，其中形成所述基板接触区域的工艺包括在所述基板支撑件的表面区域上形成阳极氧化层 铝体，所述涂层具有在约0.3密耳和约2.16密耳之间的厚度，其中所述表面区域基本上对应于所述基底接触面积，以及将所述阳极氧化层设置在所述表面区域上方的表面粗糙度在约88微英寸 约230微英寸，然后将基板表面阳极化至所述厚度，将基板支撑件邻近基板处理区域定位在基板处理室中，其中基板接触区域与基板处理区域相邻，将玻璃基板定位在基板处理区域上 基板接触面积。

公开(公告)号：US06825134B2

公开(公告)日：2004-11-30

申请号：US10254627

申请日：2002-09-24

申请人： Kam S. Law ,  Quanyuan Shang ,  William R. Harshbarger ,  Dan Maydan ,  Soo Young Choi ,  Beom Soo Park ,  Sanjay Yadav ,  John M. White

发明人： Kam S. Law ,  Quanyuan Shang ,  William R. Harshbarger ,  Dan Maydan ,  Soo Young Choi ,  Beom Soo Park ,  Sanjay Yadav ,  John M. White

IPC分类号： H01L21471

CPC分类号： C23C16/45542 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3143 ,  H01L21/31612 ,  H01L21/31683 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/32105 ,  H01L21/3211 ,  H01L29/66765

摘要： A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.

摘要翻译： 描述了膜层沉积的方法。 使用循环沉积工艺沉积膜层。 循环沉积过程基本上由一种或多种工艺气体的连续流动以及前体和能量的交替脉冲组成在衬底结构上形成膜。