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41.发明申请TRANSPARENT CONDUCTIVE THIN FILM ELECTRODES, ELECTRONIC DEVICES AND METHODS OF PRODUCING THE SAME 审中-公开透明导电薄膜电极，电子器件及其制造方法公开(公告)号：US20150279498A1
公开(公告)日：2015-10-01
申请号：US14617459
申请日：2015-02-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwang Hee KIM , Hyeon Cheol PARK , Chan KWAK , Yoon Chul SON , Sang Mock LEE
CPC classification number: C03C17/3639 , C03C17/36 , C03C17/3644 , C03C17/3649 , C03C17/3671 , C03C2217/948 , H01L31/1884 , H05B33/28 , Y02E10/50 , Y10T428/12493 , Y10T428/12556 , Y10T428/12611 , Y10T428/12625
Abstract: A transparent electrodes having a conductive thin film, an electronic devices including the same, and methods of producing the same, include a first metal layer and a second metal layer on the first metal layer, wherein a surface energy of the first metal layer is higher than a surface energy of the second metal layer.
Abstract translation: 具有导电薄膜的透明电极，包括该透明电极的电子器件及其制造方法包括在第一金属层上的第一金属层和第二金属层，其中第一金属层的表面能较高 而不是第二金属层的表面能。
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42.发明申请CATHODE FOR SOLID OXIDE FUEL CELL, METHOD OF MANUFACTURING THE SAME, AND SOLID OXIDE FUEL CELL INCLUDING THE SAME 审中-公开用于固体氧化物燃料电池的阴极，其制造方法和包括其的固体氧化物燃料电池公开(公告)号：US20140127607A1
公开(公告)日：2014-05-08
申请号：US13896395
申请日：2013-05-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chan KWAK , Doh-won JUNG , Ji-haeng YU , Hee-jung PARK , Sung-jin AHN
CPC classification number: H01M4/8828 , H01M4/9033 , H01M2008/1293
Abstract: A cathode for a solid oxide fuel cell, the cathode including: a mixed ionic-electronic conductor having a structure in a form of a pattern.
Abstract translation: 一种用于固体氧化物燃料电池的阴极，所述阴极包括：具有图案形式的结构的混合离子电子导体。
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43.发明公开公开(公告)号：US20230357043A1
公开(公告)日：2023-11-09
申请号：US18356287
申请日：2023-07-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Giyoung JO , Chan KWAK , Hyungjun KIM , Euncheol DO , Hyeoncheol PARK , Changsoo LEE
IPC: C01G33/00 , C04B35/626 , C04B35/645 , H10B12/00
CPC classification number: C01G33/006 , H01L28/40 , C04B35/6261 , C04B35/62695 , C04B35/645 , H10B12/37 , C01P2002/72 , C01P2006/40 , C01P2002/76 , C01P2006/10
Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.
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44.发明申请公开(公告)号：US20210198801A1
公开(公告)日：2021-07-01
申请号：US17126902
申请日：2020-12-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyungjun KIM , Chan KWAK , Takayoshi SASAKI , Yasuo EBINA , Changsoo LEE , Dohwon JUNG , Giyoung JO , Takaaki TANIGUCHI
Abstract: Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).
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45.发明申请公开(公告)号：US20200165142A1
公开(公告)日：2020-05-28
申请号：US16409096
申请日：2019-05-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Doh Won JUNG , Chan KWAK , Euncheol DO , Hyeon Cheol PARK , Daejin YANG , Taewon JEONG , Giyoung JO
Abstract: Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group: AxByO3-δ wherein, in Formula 1, A is a monovalent, divalent, or trivalent cation, B is a trivalent, tetravalent, or pentavalent cation, and 0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.
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Patent Agency Ranking
46.发明申请公开(公告)号：US20190304685A1
公开(公告)日：2019-10-03
申请号：US16033392
申请日：2018-07-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyun Sik KIM , Yoon Chul SON , Kyoung-Seok MOON , Daejin YANG , Chan KWAK
Abstract: Disclosed are a dielectric material, a multi-layered capacitor, and an electronic device including the same. The dielectric material includes a dielectric material particle represented by ADO3, wherein A includes Sr, Ba, Ca, Pb, K, Na, or a combination thereof, D includes Ti, Zr, Mg, Nb, Ta, or a combination thereof, the dielectric material particle includes about 2.5 moles to about 4 moles of the donor element, based on 100 moles of D, and a diameter of the dielectric material particle is in a range of from about 100 nanometers to about 300 nanometers.
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47.发明申请公开(公告)号：US20180359854A1
公开(公告)日：2018-12-13
申请号：US16106938
申请日：2018-08-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Doh Won JUNG , Se Yun KIM , Jong Wook ROH , Jongmin LEE , Sungwoo HWANG , Jinyoung HWANG , Chan KWAK
IPC: H05K1/09 , C09D7/40 , C09D1/00 , C01G55/00 , C09D5/24 , H05K3/28 , H05K1/02 , C08K3/22 , B82Y40/00 , B82Y30/00
CPC classification number: H05K1/09 , B82Y30/00 , B82Y40/00 , C01G55/004 , C01P2002/72 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/24 , C01P2004/61 , C01P2006/40 , C08K3/22 , C09D1/00 , C09D5/24 , C09D7/70 , H05K1/0274 , H05K3/28 , H05K2201/026 , H05K2201/0302 , H05K2201/032 , H05K2201/0326 , H05K2201/0338 , H05K2201/0776 , H05K2201/10977 , Y10S977/755 , Y10S977/896 , Y10S977/932
Abstract: An electrical conductor includes a substrate; and a first conductive layer disposed on the substrate and including a plurality of metal oxide nanosheets, wherein adjacent metal oxide nanosheets of the plurality of metal oxide nanosheets contact to provide an electrically conductive path between the contacting metal oxide nanosheets, wherein the plurality of metal oxide nanosheets include an oxide of Re, V, Os, Ru, Ta, Ir, Nb, W, Ga, Mo, In, Cr, Rh, Mn, Co, Fe, or a combination thereof, and wherein the metal oxide nanosheets of the plurality of metal oxide nanosheets have an average lateral dimension of greater than or equal to about 1.1 micrometers. Also an electronic device including the electrical conductor, and a method of preparing the electrical conductor.
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48.发明申请公开(公告)号：US20180257991A1
公开(公告)日：2018-09-13
申请号：US15908193
申请日：2018-02-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong Wook ROH , Daejin YANG , Doh Won JUNG , Chan KWAK , Hyungjun KIM
IPC: C04B35/491 , C04B35/468 , C04B35/47 , C04B35/472 , C01G41/00 , C01G41/02 , C01G29/00 , C01G35/00 , C07C211/63 , C07C211/01
CPC classification number: C04B35/491 , C01G29/00 , C01G29/006 , C01G35/00 , C01G35/006 , C01G41/006 , C01G41/02 , C01P2002/22 , C01P2004/03 , C01P2004/24 , C01P2006/40 , C04B35/4682 , C04B35/47 , C04B35/472 , C04B35/475 , C04B35/495 , C04B2235/3251 , C04B2235/3258 , C04B2235/3298 , C04B2235/5292 , C04B2235/5436 , C04B2235/5445 , C04B2235/85 , C07C211/01 , C07C211/63 , H01C7/008 , H01C7/115 , H01G4/10 , H01G4/1227
Abstract: A dielectric material, a method of manufacturing thereof, and a dielectric device and an electronic device including the same. A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure and the two-dimensional layered material is represented by Chemical Formula 1.
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49.发明申请公开(公告)号：US20170139514A1
公开(公告)日：2017-05-18
申请号：US15351788
申请日：2016-11-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Mi Jeong KIM , Chan KWAK , Junghwa KIM , Dong Su KO , Kwanghee KIM , Jiye KIM
CPC classification number: G06F3/0412 , B22F1/0025 , B22F2301/255 , B22F2304/05 , B32B15/02 , B32B15/08 , B32B2307/202 , B32B2457/208 , C22F1/14 , G06F3/045 , G06F2203/04102 , G06F2203/04103 , H01B1/02 , H01B1/22
Abstract: An electrical conductor includes a substrate; and a conductive layer disposed on the substrate and including a plurality of silver nanowires, wherein the silver nanowires exhibit a main peak assigned to a (111) crystal plane in an X-ray diffraction spectrum thereof, and a 2θ full width at half maximum (FWHM) of the main peak after Gaussian fitting is less than about 0.40 degrees.
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50.发明申请公开(公告)号：US20170135208A1
公开(公告)日：2017-05-11
申请号：US15342308
申请日：2016-11-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Doh Won JUNG , Se Yun KIM , Jong Wook ROH , Jongmin LEE , Sungwoo HWANG , Jinyoung HWANG , Chan KWAK
CPC classification number: H05K1/09 , B82Y30/00 , B82Y40/00 , C01G55/004 , C01P2002/72 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/24 , C01P2004/61 , C01P2006/40 , C08K3/22 , C09D1/00 , C09D5/24 , C09D7/70 , H05K1/0274 , H05K3/28 , H05K2201/026 , H05K2201/0302 , H05K2201/032 , H05K2201/0326 , H05K2201/0338 , H05K2201/0776 , H05K2201/10977 , Y10S977/755 , Y10S977/896 , Y10S977/932
Abstract: An electrical conductor includes a substrate; and a first conductive layer disposed on the substrate and including a plurality of metal oxide nanosheets, wherein adjacent metal oxide nanosheets of the plurality of metal oxide nanosheets contact to provide an electrically conductive path between the contacting metal oxide nanosheets, wherein the plurality of metal oxide nanosheets include an oxide of Re, V, Os, Ru, Ta, Ir, Nb, W, Ga, Mo, In, Cr, Rh, Mn, Co, Fe, or a combination thereof, and wherein the metal oxide nanosheets of the plurality of metal oxide nanosheets have an average lateral dimension of greater than or equal to about 1.1 micrometers. Also an electronic device including the electrical conductor, and a method of preparing the electrical conductor.
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