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    MAGNETIC STORAGE DEVICE READERS
    42.
    发明申请
    MAGNETIC STORAGE DEVICE READERS 有权

    公开(公告)号：US20170200468A1

    公开(公告)日：2017-07-13

    申请号：US14993694

    申请日：2016-01-12

    Applicant: Seagate Technology LLC

    Inventor： Wenzhong Zhu ,  Mehmet F. Erden ,  Kenneth A. Haapala ,  Wei Tian ,  Edward Gage

    IPC: G11B20/12

    CPC classification number: G11B20/1217 ,  G11B5/012 ,  G11B5/1278 ,  G11B5/4813 ,  G11B5/4886 ,  G11B20/10009 ,  G11B2020/1238

    Abstract: Implementations described and claimed herein includes a storage device comprising a plurality of readers, including a first subset of readers configured to read a first subset of tracks and a second subset of readers configured to read a second subset of tracks, the first subset of tracks being wider than the second subset of tracks. In another implementation, the readers in the first subset of readers are wider than the readers in the second subset of readers. The wider readers may be configured to recover servo information and the narrow readers may be configured to recover data information. The storage devices may include two-dimensional magnetic recording, conventional perpendicular magnetic recording, shingled magnetic recording, multi-sensor magnetic recording, and interlaced magnetic recording.

    MAGNETIC RECORDING HEAD FRONT SHIELD FORMATION
    43.
    发明申请
    MAGNETIC RECORDING HEAD FRONT SHIELD FORMATION 有权

    公开(公告)号：US20170092306A1

    公开(公告)日：2017-03-30

    申请号：US15338729

    申请日：2016-10-31

    Applicant: Seagate Technology LLC

    Inventor： Xiaohong Zhang ,  Wei Tian ,  Zhe Shen ,  Dong Lin ,  Joseph Mundenar

    IPC: G11B5/39

    CPC classification number: G11B5/3912 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/3163

    Abstract: Implementations disclosed herein provide an apparatus comprising a write pole, and a two-layer front shield formed on the write pole, the front shield comprising, a first dielectric material formed on the first layer of the front shield, an active shield control (ASC) device formed between the two layers of the front shield on the first dielectric material configured to synchronize the response to a magnetomotive force (MMF) of a write pole and the front shield, and a second dielectric material formed on the ASC device, wherein the second layer of the front shield is formed only on top of the second dielectric material and the first layer of the front shield.

    Programming a Memory Cell Using a Dual Polarity Charge Pump
    45.
    发明申请
    Programming a Memory Cell Using a Dual Polarity Charge Pump 有权
    使用双极性电荷泵编程存储单元

    公开(公告)号：US20150213901A1

    公开(公告)日：2015-07-30

    申请号：US14679654

    申请日：2015-04-06

    Applicant: Seagate Technology LLC

    Inventor： YoungPil Kim ,  Dadi Setiadi ,  Wei Tian ,  Antoine Khoueir ,  Rodney V. Bowman

    IPC: G11C16/14 ,  G11C11/56

    CPC classification number: G11C16/14 ,  G11C11/56 ,  G11C11/5628 ,  G11C11/5635 ,  G11C13/0069 ,  G11C13/0097 ,  G11C16/16 ,  G11C2013/0073 ,  G11C2211/5646

    Abstract: Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In some embodiments, an apparatus includes an array of memory cells and a dual polarity charge pump. The dual polarity charge pump has a positive polarity voltage source which applies a positive voltage to a charge storage device to program a selected memory cell to a first programming state, and a negative polarity voltage source which applies a negative voltage to the charge storage device to program the selected memory cell to a different, second programming state.

    Abstract translation: 用于管理存储器中的数据的装置和方法，诸如但不限于闪存阵列。 在一些实施例中，装置包括存储器单元阵列和双极性电荷泵。 双极性电荷泵具有正极性电压源，其向电荷存储装置施加正电压以将所选择的存储单元编程为第一编程状态;以及负极性电压源，其向电荷存储装置施加负电压 将所选择的存储器单元编程到不同的第二编程状态。

    Programmable metallization memory cell with layered solid electrolyte structure
    48.
    发明授权
    Programmable metallization memory cell with layered solid electrolyte structure 有权
    具有层状固体电解质结构的可编程金属化存储单元

    公开(公告)号：US08772122B2

    公开(公告)日：2014-07-08

    申请号：US13940547

    申请日：2013-07-12

    Applicant: Seagate Technology LLC

    Inventor： Nurul Amin ,  Insik Jin ,  Wei Tian ,  Andrew James Wirebaugh ,  Venugopalan Vaithyanathan ,  Ming Sun

    IPC: H01L21/20

    CPC classification number: H01L45/16 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/14

    Abstract: Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

    Abstract translation: 可编程金属化存储单元具有有源电极，相对的惰性电极和将活性电极与惰性电极分开的可变电阻元件。 可变电阻元件包括多个交替的固体电解质层和导电层。 导电层在可编程金属化存储单元中将有源电极电耦合到惰性电极。 也公开了形成它们的方法。

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