公开(公告)号：US5187870A

公开(公告)日：1993-02-23

申请号：US905201

申请日：1992-06-26

申请人： Atsushi Abe ,  Yoshio Sakai

发明人： Atsushi Abe ,  Yoshio Sakai

IPC分类号： G01C19/30 ,  G01C19/38

CPC分类号： G01C19/38 ,  G01C19/30

摘要： A gyro compass according to the present invention includes an inclinometer for detecting inclination of the spin axis of a rotor with respect to the earth's surface, a horizontal axis torque applying device for exerting a torque about the horizontal axis of the rotor, a vertical axis torque applying device for exerting a torque about the vertical axis of the rotor, and an equilibrium tilt angle storing device for storing an inclination angle of the rotor while the gyro compass is in the equilibrium state. An inclination adjustment controlling device for adjusting an inclination angle stored of the rotor to the inclination angle in the equilibrium state by controlling the vertical axis torque applying device.

摘要翻译： 根据本发明的陀螺仪罗盘包括用于检测转子相对于地球表面的旋转轴的倾角的倾斜计，用于施加围绕转子的水平轴线的转矩的水平轴转矩施加装置，垂直轴转矩 施加装置，用于绕转子的垂直轴施加扭矩;以及平衡倾斜角度存储装置，用于在陀螺罗盘处于平衡状态时存储转子的倾斜角。 一种倾斜调节控制装置，用于通过控制垂直轴转矩施加装置来将转子存储的倾斜角度调节到平衡状态下的倾斜角度。

公开(公告)号：US4805147A

公开(公告)日：1989-02-14

申请号：US871994

申请日：1986-06-09

申请人： Toshiaki Yamanaka ,  Yoshio Sakai ,  Tetsuya Hayashida ,  Osamu Minato ,  Katsuhiro Shimohigashi ,  Toshiaki Masuhara

发明人： Toshiaki Yamanaka ,  Yoshio Sakai ,  Tetsuya Hayashida ,  Osamu Minato ,  Katsuhiro Shimohigashi ,  Toshiaki Masuhara

IPC分类号： H01L27/04 ,  G11C11/412 ,  H01L21/265 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8244 ,  H01L23/522 ,  H01L27/10 ,  H01L27/11 ,  G11C7/00 ,  G11C11/40

CPC分类号： G11C11/4125 ,  H01L27/11 ,  H01L27/1112 ,  Y10S257/904 ,  Y10S257/906

摘要： A static random access memory cell in which capacitors are electrically connected to storage nodes, so that the memory cell will not suffer from soft error even when it is hit by alpha particles. The memory cell has MOS transistors, capacitors constituted by two polycrystalline silicon layers, and resistors constituted by a polycrystalline silicon layer, that are formed on a semiconductor substrate.

摘要翻译： 其中电容器电连接到存储节点的静态随机存取存储单元，使得即使存储单元被α粒子撞击也不会遭受软错误。 存储单元具有形成在半导体衬底上的MOS晶体管，由两个多晶硅层构成的电容器和由多晶硅层构成的电阻器。

公开(公告)号：US4785342A

公开(公告)日：1988-11-15

申请号：US8325

申请日：1987-01-29

申请人： Toshiaki Yamanaka ,  Yoshio Sakai ,  Shinpei Iijima ,  Osamu Minato ,  Shigeru Honjyo

发明人： Toshiaki Yamanaka ,  Yoshio Sakai ,  Shinpei Iijima ,  Osamu Minato ,  Shigeru Honjyo

IPC分类号： H01L27/11 ,  G11C11/41 ,  H01L21/8244 ,  H01L27/10 ,  H01L27/102 ,  H01L29/04 ,  H01L29/40 ,  H01L49/02

CPC分类号： H01L27/1025

摘要： A resistance element having a reduced occupied area and a high resistance which may be employed as a load resistor used in, for example, a static memory device. A high-resistance area is formed using a relatively thin film, while an interconnection area is formed using a relatively thick film, and these films are provided in such a manner that the thin film is in contact with the upper side of the thick film (the relatively thick film is a first-level film, and the relatively thin film is a second-level film).

摘要翻译： 具有减小的占用面积和高电阻的电阻元件，其可以用作例如静态存储器件中使用的负载电阻器。 使用相对薄的膜形成高电阻区域，而使用相对厚的膜形成互连区域，并且这些膜以这样的方式设置，使得薄膜与厚膜的上侧接触（ 相对厚的膜是第一级膜，相对薄膜是第二级膜）。

公开(公告)号：US4779709A

公开(公告)日：1988-10-25

申请号：US899640

申请日：1986-08-25

申请人： Nobuo Mitsui ,  Yoshio Sakai ,  Masao Nakazato ,  Mitsuyuki Honbu ,  Shigeta Ueda ,  Seiya Shima ,  Katsu Komuro ,  Takeki Ando ,  Akiteru Ueda ,  Kazuhiko Sasaki ,  Toshiaki Kurosawa

发明人： Nobuo Mitsui ,  Yoshio Sakai ,  Masao Nakazato ,  Mitsuyuki Honbu ,  Shigeta Ueda ,  Seiya Shima ,  Katsu Komuro ,  Takeki Ando ,  Akiteru Ueda ,  Kazuhiko Sasaki ,  Toshiaki Kurosawa

IPC分类号： H02M5/458 ,  B66B1/30

CPC分类号： H02M5/4585

摘要： An elevator control apparatus comprises an inverter device for supplying an induction motor for driving an elevator cage with AC electric power of variable voltage and frequencies and control equipment for controlling the output voltage and frequencies of the inverter device in response to signals produced in floors served by the elevator and in an elevator cage. The inverter device is constructed by a converter unit for converting AC electric power to DC electric power, at the input end of which a capacitor is connected in parallel with an AC electric source, an inverter unit for inverting the DC electric power converted in the converter unit into AC electric power, at the output end of which a capacitor is connected in parallel with an induction motor for driving the elevator cage and a DC reactor connected between the converter unit and the inverter unit.The thus constructed elevator control apparatus does not cause interference in electric appliances such as audio equipment, computer etc. existing within a building in which the elevator is installed.

摘要翻译： 电梯控制装置包括：逆变器装置，用于提供用于驱动电梯轿厢的感应电动机，其具有可变电压和频率的交流电;以及控制设备，用于响应于由服务的楼层产生的信号来控制逆变器装置的输出电压和频率 电梯和电梯笼。 逆变器装置由转换器单元构成，用于将AC电力转换成DC电力，其输入端与AC电源并联连接电容器;反相器单元，用于使在转换器中转换的DC电力反相 单元转换为交流电力，其输出端与用于驱动电梯轿厢的感应电动机并联连接电容器，连接在转换器单元和逆变器单元之间的直流电抗器。 这样构成的电梯控制装置不会对存在于安装有电梯的建筑物内的音响设备，电脑等电器产生干扰。

公开(公告)号：US4768076A

公开(公告)日：1988-08-30

申请号：US774705

申请日：1985-09-11

申请人： Masaaki Aoki ,  Toshiaki Masuhara ,  Terunori Warabisako ,  Shoji Hanamura ,  Yoshio Sakai ,  Seiichi Isomae ,  Satoshi Meguro ,  Shuji Ikeda

发明人： Masaaki Aoki ,  Toshiaki Masuhara ,  Terunori Warabisako ,  Shoji Hanamura ,  Yoshio Sakai ,  Seiichi Isomae ,  Satoshi Meguro ,  Shuji Ikeda

IPC分类号： H01L21/822 ,  H01L27/06 ,  H01L27/092 ,  H01L29/04 ,  H01L27/04

CPC分类号： H01L29/045 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/0922

摘要： A CMOS IC is formed on a semiconductor crystalline surface having a plane azimuth (110) or (023), or of a plane azimuth close thereto (plane azimuth substantially in parallel with the above-mentioned planes), in order to increase the speed of operation.At low temperatures, dependency of the carrier mobility upon the plane azimuth becomes more conspicuous as shown in FIG. 1, and the difference of mobility is amplified depending upon the planes. Therefore, employment of the above-mentioned crystalline planes helps produce a great effect when the CMOS device is to be operated at low temperature (e.g., 100.degree. K. or lower), and helps operate the device at high speeds.

摘要翻译： 在具有平面方位（110）或（023）或靠近其的平面方位（与上述平面平行的方位角）的半导体晶体表面上形成CMOS IC，以便提高 操作。 在低温下，载流子迁移率对平面方位角的依赖性变得更显着，如图3所示。 1，并且根据平面放大移动性的差异。 因此，当CMOS器件在低温（例如100°K或更低）下工作时，使用上述晶面有助于产生很大的效果，并且有助于高速操作器件。

公开(公告)号：US4756389A

公开(公告)日：1988-07-12

申请号：US78998

申请日：1987-07-29

申请人： Kazuhiro Sakata ,  Yoshio Sakai ,  Tsutomu Sano ,  Yoichi Ono

发明人： Kazuhiro Sakata ,  Yoshio Sakai ,  Tsutomu Sano ,  Yoichi Ono

IPC分类号： B66B3/02 ,  B66B1/04 ,  B66B5/02

CPC分类号： B66B1/24 ,  B66B5/028 ,  Y02B50/146 ,  Y02B50/148

摘要： In a cage position detector for a hydraulic elevator, there is provided a detector for measuring the time duration of the power failure, when the power fails. An amount of sinkage of a cage during the power failure is obtained by the time duration of the power failure and an average sinkage amount per unit time provide in advance. A cage position, which has been detected just before the power failure, is corrected by the above obtained amount of sinkage of the cage. A cage position, from which the elevator is to reopen a normal operation for service after the recovery of power, is specified by the corrected cage position.According to the present invention, even though the cage sinks during the long power failure, it is prevented to lose the true present position of the cage, from which the elevator is to reopen the normal operation after the recovery of power.

摘要翻译： 在液压升降机的轿厢位置检测器中，当电源发生故障时，设置有用于测量断电持续时间的检测器。 电力故障期间笼子的下沉量通过电力故障的持续时间和每单位时间的平均下沉量提前提供。 在电源故障之前检测到的保持架位置通过上述获得的笼的下沉量来校正。 通过校正的轿厢位置指定电梯在电源恢复后重新打开正常操作以进行维修的轿厢位置。 根据本发明，即使在长时间停电期间保持架下沉，也可以防止在恢复电力之后电梯重新打开正常操作的轿厢的真实的当前位置。

公开(公告)号：US4429215A

公开(公告)日：1984-01-31

申请号：US361376

申请日：1982-03-24

申请人： Yoshio Sakai ,  Takeshi Yamada

发明人： Yoshio Sakai ,  Takeshi Yamada

IPC分类号： H05B3/20 ,  H05B3/36 ,  H05B3/34

CPC分类号： H05B3/36 ,  H05B2203/003 ,  H05B2203/014 ,  H05B2203/017 ,  H05B2203/021

摘要： A planar heat generator comprising a linear heat generator provided with an insulating cover, a pair of insulating intermediate layers provided on opposite sides of the heat generator and heat sealed to each other via the heat generator, and a pair of outer insulating sheets provided on the outer sides of the respective intermediate layer and heat sealed to each other via the intermediate layers, the intermediate layers and outer insulating sheets being made of the same material, the insulating cover of the linear heat generator being made of a material having a slightly higher thermal deformation temperature than the intermediate layers and outer insulating sheets and flattened in a state covering the heat generator through plastic deformation caused by application of pressure and heat at the time of the heat seal.

摘要翻译： 一种平面发热体，包括设置有绝缘盖的线性发热体，设置在所述发热体的相对侧上的一对绝缘中间层，并且经由所述发热体彼此热封;以及一对外绝缘片， 各中间层的外侧，经由中间层彼此热封，中间层和外绝缘片由相同的材料制成，线性发热体的绝缘盖由具有略高的热量的材料制成 变形温度高于中间层和外部绝缘片，并且在通过在热封时施加压力和热量引起的塑性变形而覆盖发热体的状态下变平坦。

公开(公告)号：US4377819A

公开(公告)日：1983-03-22

申请号：US032017

申请日：1979-04-20

申请人： Yoshio Sakai ,  Toshiaki Masuhara ,  Osamu Minato ,  Toshio Sasaki ,  Hisao Katto ,  Norikazu Hashimoto ,  Shin-ichi Muramatsu ,  Akihiro Tomozawa

发明人： Yoshio Sakai ,  Toshiaki Masuhara ,  Osamu Minato ,  Toshio Sasaki ,  Hisao Katto ,  Norikazu Hashimoto ,  Shin-ichi Muramatsu ,  Akihiro Tomozawa

IPC分类号： G11C11/412 ,  H01L21/02 ,  H01L21/318 ,  H01L21/822 ,  H01L27/04 ,  H01L27/06 ,  H01L27/11 ,  H01L29/06 ,  H01L29/40 ,  H01L29/41 ,  H01L29/04

CPC分类号： H01L29/402 ,  H01L21/3185 ,  H01L27/0605 ,  H01L27/1112 ,  H01L28/20 ,  H01L29/41

摘要： A semiconductor device including at least a resistance element formed of polycrystalline silicon having a high resistivity. An electrode is provided on the high resistance polycrystalline silicon region with a silicon dioxide film and a silicon nitride film being interposed therebetween. The electrode is coupled to the ground potential. In this manner, high stability is obtained in the behavior of the resistance element inasmuch as the formation of a parasitic MOS device under said high resistance region is suppressed, and the threshold voltage of any such MOS device is made raised.

摘要翻译： 一种半导体器件，至少包括由具有高电阻率的多晶硅形成的电阻元件。 在具有二氧化硅膜的高电阻多晶硅区域上设置电极，并且在其间插入有氮化硅膜。 电极与地电位耦合。 以这种方式，由于抑制了在所述高电阻区域下的寄生MOS器件的形成，所以电阻元件的性能得到了很高的稳定性，并且提高了任何这种MOS器件的阈值电压。

公开(公告)号：US4199778A

公开(公告)日：1980-04-22

申请号：US843366

申请日：1977-10-19

申请人： Toshiaki Masuhara ,  Tokumasa Yasui ,  Yoshio Sakai ,  Joh Nakajima ,  Yasunobu Kosa ,  Satoshi Meguro ,  Masaharu Kubo

发明人： Toshiaki Masuhara ,  Tokumasa Yasui ,  Yoshio Sakai ,  Joh Nakajima ,  Yasunobu Kosa ,  Satoshi Meguro ,  Masaharu Kubo

IPC分类号： H01L21/763 ,  H01L21/31 ,  H01L21/3205 ,  H01L21/3215 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L29/04 ,  H01L23/48 ,  H01L29/44

CPC分类号： H01L21/32155 ,  H01L21/76889 ,  H01L23/53271 ,  H01L2924/0002

摘要： In a semiconductor integrated circuit having polycrystalline silicon interconnections and metal interconnections, a low resistance layer, containing impurities to a high concentration for the polycrystalline silicon interconnections, is formed in predetermined parts of an undoped polycrystalline silicon layer which is deposited on a first insulator film on a semiconductor substrate, a second insulator film is deposited on the polycrystalline silicon layer under the state under which the undoped parts are left at least around through-holes to be formed, and the metal interconnections at least parts of which run in a direction intersecting the polycrystalline silicon interconnections are provided on the second insulator film, the necessary contacts between the metal interconnections and the polycrystalline silicon interconnections being made through the through-holes provided in the second insulator film in correspondence with the intersecting parts of both the interconnections.

摘要翻译： 在具有多晶硅互连和金属互连的半导体集成电路中，在未掺杂的多晶硅层的预定部分中形成在多晶硅互连中含有高浓度的杂质的低电阻层，其沉积在第一绝缘膜上 半导体衬底，第二绝缘膜沉积在多晶硅层上，在未被掺杂的部分至少留在待形成的通孔周围的状态下，并且其至少部分的金属互连在与 多晶硅互连设置在第二绝缘膜上，金属互连和多晶硅互连之间的必要接触通过设置在第二绝缘膜中的通孔形成，与两个互连的相交部分相对应。

公开(公告)号：US09128375B2

公开(公告)日：2015-09-08

申请号：US14237962

申请日：2012-06-20

申请人： Michiya Higuchi ,  Fumito Suzuki ,  Yoshio Sakai ,  Hisashi Marusawa

发明人： Michiya Higuchi ,  Fumito Suzuki ,  Yoshio Sakai ,  Hisashi Marusawa

IPC分类号： G03F7/038 ,  C08G59/40 ,  G03F7/027 ,  H05K3/28 ,  C08G59/17 ,  C08G59/42 ,  C08L63/10 ,  G03F7/032 ,  H05K3/34

CPC分类号： G03F7/0385 ,  C08G59/1466 ,  C08G59/40 ,  C08G59/42 ,  C08L63/10 ,  G03F7/027 ,  G03F7/032 ,  G03F7/038 ,  G03F7/0384 ,  G03F7/0388 ,  H05K3/287 ,  H05K3/3452

摘要： The present invention provides a resin composition for resist to be efficiently formed into a cured product with high properties of crack resistance, bulge resistance, protrusion resistance, and the like for filling a through-hole, a via hole, or the like with the cured product. The resin composition for masks in accordance with the present invention contains a first resin and a second resin. The first resin is prepared by an addition reaction of polybasic acid anhydride with an adduct of an ethylenically unsaturated compound having a carboxyl group and bifunctional epoxy resin. The second resin having; a group obtained by an addition reaction of an epoxy group with monocarboxylic acid; and a group obtained by addition reaction of an epoxy group with polybasic acid.

摘要翻译： 本发明提供一种抗蚀剂用树脂组合物，其能够有效地形成具有高耐龟裂性，耐膨胀性，抗突出性等的固化物，用于填充通孔，通孔等，固化 产品。 根据本发明的掩模用树脂组合物含有第一树脂和第二树脂。 第一树脂通过多元酸酐与具有羧基的烯属不饱和化合物和双官能环氧树脂的加合物的加成反应制备。 第二树脂具有： 通过环氧基与一元羧酸的加成反应获得的基团; 和通过环氧基与多元酸的加成反应获得的基团。