Semiconductor package and manufacturing method thereof

    公开(公告)号:US11600595B2

    公开(公告)日:2023-03-07

    申请号:US16936433

    申请日:2020-07-23

    Abstract: A semiconductor package includes semiconductor bridge, first and second multilayered structures, first encapsulant, and a pair of semiconductor dies. Semiconductor dies of the pair include semiconductor substrate and conductive pads disposed at front surface of semiconductor substrate. Semiconductor bridge electrically interconnects the pair of semiconductor dies. First multilayered structure is disposed on rear surface of one semiconductor die. Second multilayered structure is disposed on rear surface of the other semiconductor die. First encapsulant laterally wraps first multilayered structure, second multilayered structure and the pair of semiconductor dies. Each one of first multilayered structure and second multilayered structure includes a top metal layer, a bottom metal layer, and an intermetallic layer. Each one of first multilayered structure and second multilayered structure has surface coplanar with surface of first encapsulant. The top metal layers, the bottom metal layers, and the intermetallic layers are in contact with the first encapsulant.

    Integrated Circuit Package and Method

    公开(公告)号:US20230052821A1

    公开(公告)日:2023-02-16

    申请号:US17980914

    申请日:2022-11-04

    Abstract: In an embodiment, a package includes: an interposer having a first side; a first integrated circuit device attached to the first side of the interposer; a second integrated circuit device attached to the first side of the interposer; an underfill disposed beneath the first integrated circuit device and the second integrated circuit device; and an encapsulant disposed around the first integrated circuit device and the second integrated circuit device, a first portion of the encapsulant extending through the underfill, the first portion of the encapsulant physically disposed between the first integrated circuit device and the second integrated circuit device, the first portion of the encapsulant being planar with edges of the underfill and edges of the first and second integrated circuit devices.

    Thermal Interface Materials, 3D Semiconductor Packages and Methods of Manufacture

    公开(公告)号:US20220375814A1

    公开(公告)日:2022-11-24

    申请号:US17883348

    申请日:2022-08-08

    Abstract: 3D semiconductor packages and methods of forming 3D semiconductor package are described herein. The 3D semiconductor packages are formed by mounting a die stack on an interposer, dispensing a thermal interface material (TIM) layer over the die stack and placing a heat spreading element over and attached to the die stack by the TIM layer. The TIM layer provides a reliable adhesion layer and an efficient thermally conductive path between the die stack and interposer to the heat spreading element. As such, delamination of the TIM layer from the heat spreading element is prevented, efficient heat transfer from the die stack to the heat spreading element is provided, and a thermal resistance along thermal paths through the TIM layer between the interposer and heat spreading element are reduced. Thus, the TIM layer reduces overall operating temperatures and increases overall reliability of the 3D semiconductor packages.

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