公开(公告)号：US20110012169A1

公开(公告)日：2011-01-20

申请号：US12933283

申请日：2009-02-02

申请人： Toshiyuki Takizawa ,  Tetsuzo Ueda ,  Manabu Usuda

发明人： Toshiyuki Takizawa ,  Tetsuzo Ueda ,  Manabu Usuda

IPC分类号： H01L33/32

CPC分类号： H01L21/02433 ,  B82Y20/00 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L2933/0016 ,  H01S5/34333

摘要： A nitride semiconductor light-emitting device includes a substrate (101) made of silicon, a mask film (102) made of silicon oxide, formed on a principal surface of the substrate (101), and having at least one opening (102a), a seed layer (104) made of GaN selectively formed on the substrate (101) in the opening (102a), an LEG layer (105) formed on a side surface of the seed layer (104), and an n-type GaN layer (106), an active layer (107), and a p-type GaN layer (108) which are formed on the LEG layer (105). The LEG layer (105) is formed by crystal growth using an organic nitrogen material as a nitrogen source.

摘要翻译： 一种氮化物半导体发光器件，包括由硅制成的衬底（101），形成在衬底（101）的主表面上的由氧化硅制成的掩模膜（102），并具有至少一个开口（102a）， 在所述开口（102a）中的所述基板（101）上选择性地形成有GaN的种子层（104），形成在所述籽晶层（104）的侧面上的LEG层（105）和n型GaN层 （106），有源层（107）和形成在LEG层（105）上的p型GaN层（108）。 使用有机氮材料作为氮源，通过晶体生长形成LEG层（105）。

公开(公告)号：US07863649B2

公开(公告)日：2011-01-04

申请号：US12331668

申请日：2008-12-10

申请人： Masahiro Hikita ,  Tetsuzo Ueda

发明人： Masahiro Hikita ,  Tetsuzo Ueda

IPC分类号： H01L29/739

CPC分类号： H01L29/2003 ,  H01L29/1066 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/808

摘要： A nitride semiconductor device includes: first through third nitride semiconductor layers formed in sequence over a substrate. The second nitride semiconductor layer has a band gap energy larger than that of the first nitride semiconductor layer. The third nitride semiconductor layer has an opening. A p-type fourth nitride semiconductor layer is formed so that the opening is filled therewith. A gate electrode is formed on the fourth nitride semiconductor layer.

摘要翻译： 氮化物半导体器件包括：顺序地在衬底上形成的第一至第三氮化物半导体层。 第二氮化物半导体层的带隙能量大于第一氮化物半导体层的带隙能量。 第三氮化物半导体层具有开口。 形成p型第四氮化物半导体层，使得开口被填充。 在第四氮化物半导体层上形成栅电极。

公开(公告)号：US20100327293A1

公开(公告)日：2010-12-30

申请号：US12880704

申请日：2010-09-13

申请人： Masahiro Hikita ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

发明人： Masahiro Hikita ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

IPC分类号： H01L29/20

CPC分类号： H01L29/7786 ,  H01L29/0843 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/7783

摘要： An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.

摘要翻译： 依次形成AlN缓冲层，未掺杂的GaN层，未掺杂的AlGaN层，p型GaN层和重掺杂的p型GaN层。 栅电极与重掺杂的p型GaN层形成欧姆接触。 源电极和漏电极设置在未掺杂的AlGaN层上。 通过在未掺杂的AlGaN层和未掺杂的GaN层和p型GaN层之间的界面处产生的二维电子气在栅极区域中形成pn结，从而可以提高栅极电压。

公开(公告)号：US07859087B2

公开(公告)日：2010-12-28

申请号：US12637240

申请日：2009-12-14

申请人： Tomohiro Murata ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Tomohiro Murata ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L23/58

CPC分类号： H01L29/7787 ,  H01L23/367 ,  H01L23/3677 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.

公开(公告)号：US07842532B2

公开(公告)日：2010-11-30

申请号：US12608625

申请日：2009-10-29

申请人： Toshiyuki Takizawa ,  Jun Shimizu ,  Tetsuzo Ueda

发明人： Toshiyuki Takizawa ,  Jun Shimizu ,  Tetsuzo Ueda

IPC分类号： H01L21/20

CPC分类号： H01L33/145 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/32 ,  H01L2933/0083 ,  H01S5/0207 ,  H01S5/2045 ,  H01S5/2223 ,  H01S5/2227 ,  H01S5/227 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor device includes: a substrate having a principal surface; a first nitride semiconductor layer formed on the principal surface of the substrate and includes one or more convex portions whose side surfaces are vertical to the principal surface; and a second nitride semiconductor layer selectively grown on the side surfaces of the one or more convex portions of the first nitride semiconductor layer.

摘要翻译： 氮化物半导体器件包括：具有主表面的衬底; 形成在所述基板的主面上的第一氮化物半导体层，具有与所述主面垂直的一个或多个凸部; 以及选择性地生长在第一氮化物半导体层的一个或多个凸部的侧面上的第二氮化物半导体层。

公开(公告)号：US07728359B2

公开(公告)日：2010-06-01

申请号：US11812591

申请日：2007-06-20

申请人： Tatsuo Morita ,  Tetsuzo Ueda

发明人： Tatsuo Morita ,  Tetsuzo Ueda

IPC分类号： H01L51/00

CPC分类号： H01L29/2003 ,  H01L29/201 ,  H01L29/66318 ,  H01L29/7371

摘要： In a nitride semiconductor based bipolar transistor, a contact layer formed so as to contact an emitter layer is composed of n-type InAlGaN quaternary mixed crystals, the emitter layer and the contact layer are selectively removed so that the barrier height with the emitter formed thereon is small, and the ohmic electrode contact resistance can be lowered on the InAlGaN quaternary mixed crystals, for example, so that a WSi emitter electrode becomes an eave. A base electrode is formed by a self-aligned process using the emitter electrode as a mask. By such a configuration, the distance between the emitter and the edge of the base electrode is sufficiently shortened, and the base resistance can be lowered. As a result, a bipolar transistor having favorable high-frequency characteristics can be realized.

摘要翻译： 在基于氮化物半导体的双极型晶体管中，形成为与发射极层接触的接触层由n型InAlGaN四元混晶构成，选择性地去除发射极层和接触层，使得其上形成有发射极的势垒高度 例如，在InAlGaN四元混晶中的欧姆电极接触电阻可以降低，使得WSi发射极成为檐。 通过使用发射电极作为掩模的自对准工艺形成基极。 通过这样的结构，能够充分地缩短发射极与基极的边缘之间的距离，能够降低基极电阻。 结果，可以实现具有良好的高频特性的双极晶体管。

公开(公告)号：US07700392B2

公开(公告)日：2010-04-20

申请号：US11286348

申请日：2005-11-25

申请人： Tetsuzo Ueda ,  Hisanori Ishiguro

发明人： Tetsuzo Ueda ,  Hisanori Ishiguro

IPC分类号： H01L21/78 ,  H01L21/301 ,  H01L21/46

CPC分类号： H01L21/67213 ,  B82Y20/00 ,  H01L21/67132 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/028 ,  H01S5/34333

摘要： The present invention is to provide a semiconductor laser device manufacturing method for realizing highly reliable semiconductor laser devices. The semiconductor laser device manufacturing method includes: cutting a wafer into bar-shaped wafers by scanning an electron beam on the front side of the wafer on which a semiconductor laser structure has been formed so as to cause cracks which trigger the cutting of the wafer; and depositing front and back coating films on the end faces, which have been newly exposed by the cutting of the wafer, of the cut wafers. In the method the cut wafers are transferred in a non-ambient atmosphere at a time between the cutting of the wafer and the depositing of the end face coating films.

摘要翻译： 本发明提供一种实现高可靠性的半导体激光器件的半导体激光器件制造方法。 半导体激光器件制造方法包括：通过扫描在其上形成有半导体激光器结构的晶片的正面上的电子束来将晶片切割成棒状晶片，以引起触发切割晶片的裂纹; 并且通过切割晶片新近暴露的端面上沉积切割晶片的前后涂膜。 在该方法中，切割晶片在切割晶片和沉积端面涂膜之间的时间在非环境大气中转移。

公开(公告)号：US20100090250A1

公开(公告)日：2010-04-15

申请号：US12637240

申请日：2009-12-14

申请人： Tomohiro MURATA ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Tomohiro MURATA ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/205 ,  H01L29/772 ,  H01L29/06

CPC分类号： H01L29/7787 ,  H01L23/367 ,  H01L23/3677 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.

摘要翻译： 半导体器件包括：半导体层; 形成在与半导体层接触的半导体层上的至少一个电极; 以及覆盖半导体层和电极的顶表面的至少一部分的钝化膜，以保护半导体层并由多个子膜形成。 钝化膜包括由氮化铝制成的第一子膜。

公开(公告)号：US20090121775A1

公开(公告)日：2009-05-14

申请号：US11995040

申请日：2006-06-27

申请人： Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Masahiro Hikita ,  Hiroaki Ueno

发明人： Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Masahiro Hikita ,  Hiroaki Ueno

IPC分类号： H01L29/207 ,  H03K17/687

CPC分类号： H01L29/739 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7786

摘要： In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are formed in this order on a sapphire substrate 101. The transistor further includes a gate electrode 110 in ohmic contact with the p-type contact layer 106, and a source electrode 108 and a drain electrode 109 provided on the undoped AlGaN layer 104. By applying a positive voltage to the p-type control layer 105, holes are injected into a channel to increase a current flowing in the channel.

摘要翻译： 在晶体管中，在蓝宝石衬底101上依次形成AlN缓冲层102，未掺杂的GaN层103，未掺杂的AlGaN层104，p型控制层105和p型接触层106。 晶体管还包括与p型接触层106欧姆接触的栅电极110以及设置在未掺杂的AlGaN层104上的源电极108和漏极109.通过向p型控制层105施加正电压 ，孔被注入到通道中以增加在通道中流动的电流。

公开(公告)号：US07508001B2

公开(公告)日：2009-03-24

申请号：US11154807

申请日：2005-06-17

申请人： Tetsuzo Ueda ,  Masaaki Yuri

发明人： Tetsuzo Ueda ,  Masaaki Yuri

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/0655 ,  H01S5/2009 ,  H01S5/2206 ,  H01S5/2218 ,  H01S5/2232 ,  H01S5/3063 ,  H01S2304/04 ,  H01S2304/12

摘要： The present invention aims to provide a long-lived semiconductor laser device with low threshold current and available for high-output operation in a blue-violet semiconductor laser device using a nitride semiconductor layer. In the semiconductor laser device, the following layers are sequentially formed on a GaN substrate 1: an n-type GaN layer 2; an n-type AlGaN cladding layer 3, a first n-type GaN guiding layer 4; and a p-type AlGaN blocking layer 6 (current-blocking layer), further a striped opening is formed on a portion of the p-type AlGaN blocking layer 6, a second n-type GaN guiding layer 5 is formed to cover the opening, and the following layers are sequentially formed on the second n-type GaN guiding layer 5: an InGaN multiple quantum well active layer 7; an undoped GaN guiding layer 8; a p-type AlGaN electron overflow suppression layer 9, a p-type AlGaN cladding layer 10, and a p-type GaN contact layer 11.

摘要翻译： 本发明旨在提供一种具有低阈值电流的长寿命半导体激光器件，并且可用于使用氮化物半导体层的蓝紫色半导体激光器件中的高输出操作。 在半导体激光器件中，在GaN衬底1上依次形成以下层：n型GaN层2; n型AlGaN包覆层3，第一n型GaN引导层4， 和p型AlGaN阻挡层6（电流阻挡层），另外在p型AlGaN阻挡层6的一部分上形成条状开口，形成第二n型GaN引导层5以覆盖开口 并且在第二n型GaN引导层5上依次形成以下层：InGaN多量子阱有源层7; 未掺杂的GaN引导层8; p型AlGaN电子溢出抑制层9，p型AlGaN包覆层10和p型GaN接触层11。