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81 条记录 (耗时 0.03 秒)

    Methods of forming hafnium oxide
    41.
    发明授权
    Methods of forming hafnium oxide 有权
    形成氧化铪的方法

    公开(公告)号：US07217630B2

    公开(公告)日：2007-05-15

    申请号：US10928547

    申请日：2004-08-26

    申请人： Cem Basceri ,  F. Daniel Gealy ,  Gurtej S. Sandhu

    发明人： Cem Basceri ,  F. Daniel Gealy ,  Gurtej S. Sandhu

    IPC分类号： H01L21/20

    CPC分类号： H01G4/33 ,  H01G4/1209 ,  H01G4/1272 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/65 ,  H01L28/90 ,  H01L28/91 ,  H01L29/7833

    摘要： The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.

    摘要翻译： 本发明包括形成含铪材料的方法，例如氧化铪。 在一个方面，提供了一种半导体衬底，并且利用第一反应条件来形成在衬底上所需的结晶相和取向的含铪种子材料。 随后，利用第二反应条件在种子材料上生长第二含铪材料。 第二含铪材料处于与含铪种子材料的结晶相和取向不同的结晶相和/或取向。 第二含铪材料可以是例如非晶相。 然后将种子材料用于在第二含铪材料中诱导所需的结晶相和取向。 本发明还包括使用含铪材料的电容器结构和包括电容器结构的电路组件。

    Capacitor constructions with a barrier layer to threshold voltage shift inducing material
    42.
    发明授权
    Capacitor constructions with a barrier layer to threshold voltage shift inducing material 失效
    具有阻挡层的阈值电压移动诱导材料的电容器结构

    公开(公告)号：US07205600B2

    公开(公告)日：2007-04-17

    申请号：US10223805

    申请日：2002-08-19

    申请人： Vishnu K. Agarwal ,  F. Daniel Gealy ,  Kunal R. Parekh ,  Randhir P. S. Thakur

    发明人： Vishnu K. Agarwal ,  F. Daniel Gealy ,  Kunal R. Parekh ,  Randhir P. S. Thakur

    IPC分类号： H01L27/108 ,  H01L29/76

    CPC分类号： H01L28/40 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76838 ,  H01L23/5222 ,  H01L28/57 ,  H01L28/84 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A capacitor forming method can include forming an insulation layer over a substrate and forming a barrier layer to threshold voltage shift inducing material over the substrate. An opening can be formed at least into the insulation layer and a capacitor dielectric layer formed at least within the opening. Threshold voltage inducing material can be provided over the barrier layer but be retarded in movement into an electronic device comprised by the substrate. The dielectric layer can comprise a tantalum oxide and the barrier layer can include a silicon nitride. Providing threshold voltage shift inducing material can include oxide annealing dielectric layer such as with N2O. The barrier layer can be formed over the insulation layer, the insulation layer can be formed over the barrier layer, or the barrier layer can be formed over a first insulation layer with a second insulation layer formed over the barrier layer. Further, the barrier layer can be formed after forming the capacitor electrode or after forming the dielectric layer, for example, by using poor step coverage deposition methods.

    摘要翻译： 电容器形成方法可以包括在衬底上形成绝缘层，并在衬底上形成阈值电压移动诱导材料的势垒层。 开口可以至少形成在绝缘层中，并且至少形成在开口内形成电容器电介质层。 阈值电压诱导材料可以设置在阻挡层之上，但是在运动中被延迟到由衬底包括的电子器件中。 电介质层可以包括氧化钽，并且阻挡层可以包括氮化硅。 提供阈值电压移动诱导材料可以包括氧化物退火介质层，例如N 2 O 2。 可以在绝缘层上形成阻挡层，可以在阻挡层上形成绝缘层，或者可以在第一绝缘层上形成阻挡层，在隔离层上形成第二绝缘层。 此外，阻挡层可以在形成电容器电极之后或在形成介电层之后形成，例如通过使用差的阶梯覆盖沉积方法。

    Capacitor having an electrode formed from a transition metal or a conductive metal-oxide, and method of forming same
    43.
    发明授权
    Capacitor having an electrode formed from a transition metal or a conductive metal-oxide, and method of forming same 失效
    具有由过渡金属或导电金属氧化物形成的电极的电容器及其形成方法

    公开(公告)号：US06960513B2

    公开(公告)日：2005-11-01

    申请号：US09770699

    申请日：2001-01-26

    申请人： F. Daniel Gealy ,  Thomas M. Graettinger

    发明人： F. Daniel Gealy ,  Thomas M. Graettinger

    IPC分类号： H01L21/02 ,  H01L21/20

    CPC分类号： H01L28/90 ,  H01G4/33 ,  H01L23/5223 ,  H01L28/55 ,  H01L28/65 ,  H01L28/84 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A capacitor including a first electrode selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof. The capacitor also includes a second electrode and a dielectric between the first and second electrodes. The present invention may be used to form devices, such as memory devices and processors. The present invention also includes a method of making a capacitor. The method includes forming a first electrode selected from a group consisting of transition metals, conductive metal-oxides, and alloys thereof. The method also includes forming a second electrode and forming a dielectric between the first and second electrodes.

    摘要翻译： 一种电容器，包括从由过渡金属，导电金属氧化物，其合金组成的组中选择的第一电极及其组合。 电容器还包括第一电极和第二电极之间的第二电极和电介质。 本发明可以用于形成诸如存储器件和处理器之类的器件。 本发明还包括制造电容器的方法。 该方法包括形成选自过渡金属，导电金属氧化物及其合金的第一电极。 该方法还包括形成第二电极并在第一和第二电极之间形成电介质。

    Methods of depositing noble metals and methods of forming capacitor constructions
    45.
    发明授权
    Methods of depositing noble metals and methods of forming capacitor constructions 失效
    沉积贵金属的方法和形成电容器结构的方法

    公开(公告)号：US06773984B2

    公开(公告)日：2004-08-10

    申请号：US10231789

    申请日：2002-08-29

    申请人： Cancheepuram V. Srividya ,  F. Daniel Gealy ,  Thomas M. Graettinger

    发明人： Cancheepuram V. Srividya ,  F. Daniel Gealy ,  Thomas M. Graettinger

    IPC分类号： H01L218242

    CPC分类号： H01L28/65 ,  H01L27/1085 ,  H01L27/10852 ,  H01L27/1087 ,  H01L28/84 ,  H01L29/66181

    摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.

    摘要翻译： 本发明包括沉积贵金属的方法。 提供基板。 衬底具有第一区域和第二区域。 第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。 在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。 在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。 本发明还包括电容器结构和形成电容器结构的方法。

    Multilayer electrode for a ferroelectric capacitor
    46.
    发明授权
    Multilayer electrode for a ferroelectric capacitor 有权
    用于铁电电容器的多层电极

    公开(公告)号：US06744093B2

    公开(公告)日：2004-06-01

    申请号：US09930958

    申请日：2001-08-17

    申请人： Vishnu K. Agarwal ,  Garo J. Derderian ,  F. Daniel Gealy

    发明人： Vishnu K. Agarwal ,  Garo J. Derderian ,  F. Daniel Gealy

    IPC分类号： H01L31119

    CPC分类号： H01L27/11502 ,  H01G4/008 ,  H01G4/33 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75 ,  H01L28/91

    摘要： A ferroelectric or high dielectric constant capacitor having a multilayer lower electrode comprising at least two layers—a platinum layer and a platinum-rhodium layer—for use in a random access memory (RAM) cell. The platinum layer of the lower electrode adjoins the capacitor dielectric, which is a ferroelectric or high dielectric constant dielectric such as BST, PZT, SBT or tantalum pentoxide. The platinum-rhodium layer serves as an oxidation barrier and may also act as an adhesion layer for preventing separation of the lower electrode from the substrate, thereby improving capacitor performance. The multilayer electrode may have titanium and/or titanium nitride layers under the platinum-rhodium layer for certain applications. The capacitor has an upper electrode which may be a conventional electrode or which may have a multilayer structure similar to that of the lower electrode. Processes for manufacturing the multilayer lower electrode and the capacitor are also disclosed.

    摘要翻译： 一种铁电或高介电常数电容器，其具有包括至少两层的多层下电极 - 铂层和铂 - 铑层，用于随机存取存储器（RAM）单元。 下电极的铂层与电容器电介质接触，电容器电介质是铁电或高介电常数电介质，如BST，PZT，SBT或五氧化二钽。 铂 - 铑层用作氧化屏障，并且还可以用作防止下电极与衬底分离的粘合层，从而提高电容器性能。 对于某些应用，多层电极可以在铂 - 铑层下方具有钛和/或氮化钛层。 电容器具有可以是常规电极的上电极，或者可以具有与下电极类似的多层结构。 还公开了用于制造多层下电极和电容器的工艺。

    Method for stabilizing high pressure oxidation of a semiconductor device
    47.
    发明授权
    Method for stabilizing high pressure oxidation of a semiconductor device 有权
    稳定半导体器件的高压氧化的方法

    公开(公告)号：US06596651B2

    公开(公告)日：2003-07-22

    申请号：US10212892

    申请日：2002-08-05

    申请人： F. Daniel Gealy ,  Scott DeBoer ,  Dave Chapek ,  Husam N. Al-Shareef ,  Randhir Thakur

    发明人： F. Daniel Gealy ,  Scott DeBoer ,  Dave Chapek ,  Husam N. Al-Shareef ,  Randhir Thakur

    IPC分类号： H01L2131

    CPC分类号： H01L21/28202 ,  C30B33/005 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31662 ,  H01L29/518 ,  Y10S438/903

    摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    摘要翻译： 公开了一种在高压氧化炉内高压氧化阶段防止N2O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N2O。 该催化剂用于五个大气压和25个大气压N 2 O之间的环境中，并且温度范围为600℃至750℃，这是导致N 2 O变得超临界的条件。 通过防止N2O变得超临界，可以控制反应，防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯，铂，铱，铑，镍，银和金。