Connector
    43.
    发明申请
    Connector 审中-公开
    连接器

    公开(公告)号:US20070006133A1

    公开(公告)日:2007-01-04

    申请号:US11446226

    申请日:2006-06-05

    IPC分类号: G06F9/44

    CPC分类号: G06F8/20

    摘要: A connector has a linking section, an associating section, and a controller. The linking section can link with at least one other connector at an input side or an output side. The associating section associates the connector with a processing module that executes a predetermined processing. The controller recognizes a linked state with other connectors, and, in accordance with the linked state, controls the processing module associated by the associating section.

    摘要翻译: 连接器具有连接部分,关联部分和控制器。 连接部分可以在输入侧或输出侧与至少一个其它连接器连接。 关联部分将连接器与执行预定处理的处理模块相关联。 控制器识别与其他连接器的链接状态,并且根据链接状态来控制由关联部分关联的处理模块。

    Disk drive with a dual-stage actuator and failure detection and recovery system for the secondary actuator

    公开(公告)号:US07075748B2

    公开(公告)日:2006-07-11

    申请号:US10997153

    申请日:2004-11-24

    IPC分类号: G11B5/596

    CPC分类号: G11B5/5552 G11B5/5534

    摘要: A dual-stage actuator disk drive has calibration tracks located in a nondata band, and uses a secondary-actuator failure detection and calibration test run by the servo control processor. The calibration tracks contain a pattern of pre-written magnetized test blocks. The test is run with the primary actuator biased against a crash stop, which enables the read head to access the calibration tracks. The servo control processor generates a test signal to the secondary actuator and receives a calibration signal from the read head as the read head detects the test blocks in the calibration tracks. The test comprises two measurements: a measurement of the secondary actuator static characteristics, and a measurement of the secondary actuator dynamic characteristics.

    Chemically amplified resist composition
    48.
    发明申请
    Chemically amplified resist composition 审中-公开
    化学放大抗蚀剂组合物

    公开(公告)号:US20060073411A1

    公开(公告)日:2006-04-06

    申请号:US11233130

    申请日:2005-09-23

    IPC分类号: G03C1/76

    CPC分类号: G03F7/0397 G03F7/0392

    摘要: The present invention provides a chemically amplified resist composition comprising a treated resin (1), an acid generator and a solvent, wherein resin (1) is (a) a (meth)acrylic resin which is insoluble or poorly soluble in an alkali aqueous solution and becomes soluble in an alkali aqueous solution by the action of an acid, and which comprises a repeating unit having an alicyclic hydrocarbon group in its side chain or (b) a styrenic resin which is insoluble or poorly soluble in an alkali aqueous solution and becomes soluble in an alkali aqueous solution by the action of an acid, and which comprises a repeating unit derived from hydroxystyrene, and wherein the treated resin (1) is obtained by (A) contacting crude resin (1) with activated carbon at 40 to 90° C. to obtain hemi-treated crude resin (1) and contacting the hemi-treated resin (1) with at least one member selected from the group consisting of kieselguhr and silica gel, or (B) contacting crude resin (1) with activated carbon and at least one member selected from the group consisting of kieselguhr and silica gel at 40 to 90 ° C.

    摘要翻译: 本发明提供一种化学增幅抗蚀剂组合物,其包含处理过的树脂(1),酸产生剂和溶剂,其中树脂(1)是(a)在碱水溶液中不溶或难溶的(甲基)丙烯酸树脂 并且通过酸的作用而溶于碱性水溶液中,并且其侧链含有具有脂环族烃基的重复单元或(b)在碱性水溶液中不溶或难溶于苯乙烯树脂,成为 通过酸的作用可溶于碱性水溶液,其中含有由羟基苯乙烯衍生的重复单元,其中,(A)将粗树脂(1)与40〜90的活性炭接触而得到 得到半经处理的粗树脂(1),并将半经处理的树脂(1)与选自硅藻土和硅胶的至少一种物质接触,或(B)使粗树脂(1)与 活性炭 和选自硅藻土和硅胶中的至少一种在40至90℃。

    Method for manufacturing semiconductor integrated circuit device
    49.
    发明授权
    Method for manufacturing semiconductor integrated circuit device 有权
    半导体集成电路器件的制造方法

    公开(公告)号:US06909133B2

    公开(公告)日:2005-06-21

    申请号:US10699690

    申请日:2003-11-04

    摘要: In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is suppressed. A gate insulating film of MISFETs constituting an internal circuit is comprised of a silicon oxynitride film. Another gate insulating film of MISFETs constituting an I/O circuit is comprised of a laminated silicon oxynitride film and a high dielectric film. A process of forming the two types of gate insulating films on the substrate is continuously carried out in a treatment apparatus of a multi-chamber system. Accordingly, the substrate will not be exposed to air. Therefore, it is possible to suppress the inclusion of undesirable foreign matter and the formation of a natural oxide film at the interface between the substrate and the gate insulating films.

    摘要翻译: 在形成具有相同基板上的厚度相互不同的栅极绝缘膜的MISFET的过程中,抑制了在半导体基板和栅极绝缘膜之间的界面处形成不期望的自然氧化膜。 构成内部电路的MISFET的栅极绝缘膜由氮氧化硅膜构成。 构成I / O电路的MISFET的另一个栅极绝缘膜由层叠的氮氧化硅膜和高介电膜构成。 在多室系统的处理装置中连续地进行在基板上形成两种栅极绝缘膜的工序。 因此,基板不会暴露在空气中。 因此,可以抑制在基板和栅极绝缘膜之间的界面处包含不需要的异物和形成自然氧化膜。