公开(公告)号：US06778575B2

公开(公告)日：2004-08-17

申请号：US10100920

申请日：2002-03-20

申请人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuhiko Nomura ,  Kunio Takeuchi

发明人： Ryoji Hiroyama ,  Daijiro Inoue ,  Yasuhiko Nomura ,  Kunio Takeuchi

IPC分类号： G01R2302

CPC分类号： B82Y20/00 ,  H01S5/0218 ,  H01S5/162 ,  H01S5/34326 ,  H01S2301/18

摘要： A semiconductor laser device having a real refractive index guided structure capable of obtaining a high kink light output and a high maximum light output also when a vertical beam divergence angle is at a small level of at least 12.5° and not more than 20.0° is provided. This semiconductor laser device comprises an n-type cladding layer of AlGaInP formed on an n-type GaAs substrate, an active layer having an AlGaInP layer formed on the n-type cladding layer, a p-type cladding layer of AlGaInP formed on the active layer and a light confinement layer formed to partially cover the p-type cladding layer, and a vertical beam divergence angle is at least 12.5° and not more than 20.0°. Thus, a higher kink light output and a higher maximum light output can be obtained as compared with a conventional semiconductor laser device having a vertical beam divergence angle exceeding 20.0°.

摘要翻译： 提供具有实际折射率引导结构的半导体激光器件，当垂直光束发散角处于至少12.5°且不大于20.0°的较小水平时，也可以获得高扭结光输出和高最大光输出 。 该半导体激光器件包括在n型GaAs衬底上形成的AlGaInP的n型包覆层，在n型覆层上形成有AlGaInP层的有源层，形成在活性层上的AlGaInP的p型包覆层 层和形成为部分地覆盖p型包层的光限制层，垂直光束发散角为至少12.5°且不大于20.0°。 因此，与具有超过20.0°的垂直光束发散角的常规半导体激光器件相比，可以获得更高的扭结光输出和更高的最大光输出。

公开(公告)号：US6044099A

公开(公告)日：2000-03-28

申请号：US924826

申请日：1997-09-05

申请人： Masayuki Shono ,  Ryoji Hiroyama ,  Kouji Komeda ,  Toyozo Nishida ,  Yasuyuki Bessho

发明人： Masayuki Shono ,  Ryoji Hiroyama ,  Kouji Komeda ,  Toyozo Nishida ,  Yasuyuki Bessho

IPC分类号： H01S3/22 ,  H01S5/16 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/085

CPC分类号： H01S5/16 ,  B82Y20/00 ,  H01S3/22 ,  H01S5/168 ,  H01S5/34 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/34326

摘要： A semiconductor laser device comprises an n-type cladding layer, an active layer formed on the n-type cladding layer and having a quantum well structure including one or a plurality of quantum well layers, a p-type cladding layer comprising a flat portion formed on the active layer and a stripe-shaped ridge portion on the flat portion, and a current blocking layer formed on the flat portion so as to cover the side surface of the ridge portion and formed on a region on the upper surface of the ridge portion from one of facets of a cavity to a position at a predetermined distance therefrom.

摘要翻译： 一种半导体激光器件包括n型包覆层，形成在n型包层上的有源层，并具有包括一个或多个量子阱层的量子阱结构，p型包层形成为平坦部分 在平坦部分上的有源层和条形脊部分上形成的电流阻挡层，以及形成在平坦部分上的电流阻挡层，以覆盖脊部的侧表面并形成在脊部的上表面上的区域上 从空腔的一个面到距预定距离的位置。

公开(公告)号：US5963572A

公开(公告)日：1999-10-05

申请号：US773346

申请日：1996-12-26

申请人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

发明人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

IPC分类号： H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/2206 ,  H01S5/222

摘要： A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5.times.10.sup.7 cm.sup.-3 or less. The n-type current blocking layer has a thickness of 0.4 .mu.m or less.

摘要翻译： 一种半导体激光装置，包括n型包层，有源层，具有脊部的p型包覆层，形成在平坦部分上的n型光限制层和p型包层， 型包层，以及n型光限制层上形成的n型电流阻挡层。 光限制层由掺杂有n型杂质的低电阻率层构成，其折射率比p型覆层更小，并且带隙能量大于激光的能量。 光学限制层的杂质浓度为5×10 7 cm -3以下。 n型电流阻挡层的厚度为0.4μm以下。

公开(公告)号：US20070069221A1

公开(公告)日：2007-03-29

申请号：US11525088

申请日：2006-09-22

申请人： Ryoji Hiroyama ,  Teruaki Miyake ,  Yuzuru Miyata

发明人： Ryoji Hiroyama ,  Teruaki Miyake ,  Yuzuru Miyata

IPC分类号： H01L33/00

CPC分类号： H01S5/162 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

摘要： A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

摘要翻译： 可以获得能够进一步提高温度特性的半导体激光二极管，同时充分防止激光束发射端面部分通过窗口结构的热破坏。 该半导体激光二极管包括在激光束发射端面部分具有窗口结构的有源层和形成在有源层的表面上的包含Mg和Zn作为杂质的p型层。 包含在p型层中的Zn的杂质浓度大于p型层中所含的Mg的杂质浓度。

公开(公告)号：US5586136A

公开(公告)日：1996-12-17

申请号：US270056

申请日：1994-07-01

申请人： Shoji Honda ,  Masayuki Shono ,  Yasuyuki Bessho ,  Ryoji Hiroyama ,  Hiroyuki Kase ,  Takatoshi Ikegami

发明人： Shoji Honda ,  Masayuki Shono ,  Yasuyuki Bessho ,  Ryoji Hiroyama ,  Hiroyuki Kase ,  Takatoshi Ikegami

IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34326 ,  H01S5/1039 ,  H01S5/2013 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3403

摘要： A semiconductor laser device according to the present invention comprises a GaAs substrate of a first conductivity type, a cladding layer of the first conductivity type formed on one main surface of the substrate, an active layer having a quantum well structure in which a tensile strain quantum well layer and a quantum barrier layer which are formed on the cladding layer of the first conductivity type are alternately laminated, and a cladding layer of a second conductivity type formed on the active layer. The one main surface of the substrate is a surface misoriented by 9.degree. to 17.degree. from a {100} plane of the substrate in a direction, and the cavity length is not less than 150 .mu.m nor more than 300 .mu.m.

摘要翻译： 根据本发明的半导体激光器件包括第一导电类型的GaAs衬底，形成在衬底的一个主表面上的第一导电类型的覆层，具有量子阱结构的有源层，其中拉伸应变量 形成在第一导电类型的包覆层上的阱层和量子势垒层交替层叠，并且在有源层上形成第二导电类型的包覆层。 基板的一个主表面是在<011>方向上从基板的{100}面偏离9°至17°的表面，并且空腔长度不小于150μm不大于300μm 。

公开(公告)号：US07260130B2

公开(公告)日：2007-08-21

申请号：US10811137

申请日：2004-03-29

申请人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Daijiro Inoue ,  Shigeyuki Okamoto ,  Noriaki Matsuoka ,  Shingo Kameyama ,  Kiyoshi Oota

发明人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Daijiro Inoue ,  Shigeyuki Okamoto ,  Noriaki Matsuoka ,  Shingo Kameyama ,  Kiyoshi Oota

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L24/83 ,  H01L2224/83192 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/34326

摘要： A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.

摘要翻译： 得到能够提高散热性，简化制造工序，提高制造成品率的半导体激光装置。 该半导体激光器件包括形成在发射层上同时构成凸脊部分的半导体层，由形成为至少覆盖脊部的侧表面的半导体构成的电流阻挡层，形成为接触的第一金属电极 脊部的上表面和从脊部以规定间隔配置在脊部两侧的凸状支撑部。

公开(公告)号：US06654397B2

公开(公告)日：2003-11-25

申请号：US09941663

申请日：2001-08-30

申请人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Shigeyuki Okamoto ,  Koji Tominaga ,  Yasuhiko Nomura ,  Daijiro Inoue

发明人： Kunio Takeuchi ,  Ryoji Hiroyama ,  Shigeyuki Okamoto ,  Koji Tominaga ,  Yasuhiko Nomura ,  Daijiro Inoue

IPC分类号： H01S500

CPC分类号： H01S5/16 ,  H01S5/0425 ,  H01S5/168

摘要： An n-GaAs current blocking layer is formed on a p-AlGaInP first cladding layer, on sides of a ridge portion and in a region on the upper surface of the ridge portion above a window region. Raised portions are formed in a p-GaAs cap layer in regions in the vicinity of facets, while raised regions are formed in the regions of a first electrode in the vicinity of the facets. A second electrode having a thickness larger than the height of the raised regions is formed on the region between the raised regions of the first electrode.

公开(公告)号：US20090323750A1

公开(公告)日：2009-12-31

申请号：US12492808

申请日：2009-06-26

申请人： Daijiro Inoue ,  Kiyoshi Oota ,  Yoshiki Murayama ,  Ryoji Hiroyama ,  Hiroki Ohbo ,  Seiichi Tokunaga

发明人： Daijiro Inoue ,  Kiyoshi Oota ,  Yoshiki Murayama ,  Ryoji Hiroyama ,  Hiroki Ohbo ,  Seiichi Tokunaga

IPC分类号： H01S5/00 ,  H01L21/00 ,  H01S5/028

CPC分类号： B82Y20/00 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/024 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04

摘要： A semiconductor laser device includes a semiconductor device layer having an emission layer and formed with a current path on a semiconductor layer in the vicinity of the emission layer, a current blocking layer formed in the vicinity of the current path, and a heat-radiation layer formed to be provided at least in the vicinity of a region formed with a cavity facet of the semiconductor device layer and be located above the current path, and having thermal conductivity larger than that of the current blocking layer.

摘要翻译： 半导体激光装置包括具有发光层并在发光层附近的半导体层上形成有电流路径的半导体器件层，形成在电流路径附近的电流阻挡层，以及散热层 形成为至少设置在形成有半导体器件层的空腔面的区域附近，并且位于电流路径上方，并且具有比当前阻挡层的导热性更大的导热性。

公开(公告)号：US06967985B2

公开(公告)日：2005-11-22

申请号：US10361618

申请日：2003-02-11

申请人： Koji Tominaga ,  Kazushi Mori ,  Atsushi Tajiri ,  Yasuhiko Nomura ,  Ryoji Hiroyama

发明人： Koji Tominaga ,  Kazushi Mori ,  Atsushi Tajiri ,  Yasuhiko Nomura ,  Ryoji Hiroyama

IPC分类号： H01S5/183 ,  H01S3/08

CPC分类号： H01S5/18355 ,  H01S5/18311 ,  H01S5/18319 ,  H01S5/18327 ,  H01S5/18338 ,  H01S5/18347 ,  H01S5/1835 ,  H01S2301/14

摘要： A surface emission semiconductor laser device capable of substantially completely controlling the plane of polarization is obtained. This surface emission semiconductor laser device comprises a first multi-layer reflector, an emission layer formed on the first multi-layer reflector and a second multi-layer reflector formed on the emission layer, and at least either the first multi-layer reflector or the second multi-layer reflector includes a striped part worked in a striped manner in a prescribed period.

摘要翻译： 获得能够基本上完全控制偏振面的表面发射半导体激光器件。 该表面发射半导体激光器件包括第一多层反射器，形成在第一多层反射器上的发射层和形成在发射层上的第二多层反射器，以及至少第一多层反射器或 第二多层反射器包括在规定时间内以条纹方式工作的条纹部分。

公开(公告)号：US06771676B2

公开(公告)日：2004-08-03

申请号：US10234250

申请日：2002-09-05

申请人： Kunio Takeuchi ,  Shigeyuki Okamoto ,  Ryoji Hiroyama ,  Yasuhiko Nomura ,  Daijiro Inoue

发明人： Kunio Takeuchi ,  Shigeyuki Okamoto ,  Ryoji Hiroyama ,  Yasuhiko Nomura ,  Daijiro Inoue

IPC分类号： H01S304

CPC分类号： B82Y20/00 ,  H01S5/0021 ,  H01S5/0213 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/2231 ,  H01S5/34333

摘要： A semiconductor laser device capable of improving reliability is obtained in a structure formed by mounting a semiconductor laser element on a submount (base) in a junction-down system. This semiconductor laser device comprises a first electrode layer formed on the surface of a semiconductor element including an emission layer to have a shape comprising recess portions and projection portions, a base mounted with the semiconductor element, and a plurality of low melting point metal layers provided between the first electrode layer formed on the surface of the semiconductor element and the base for bonding the first electrode layer formed on the surface of the semiconductor element and the base to each other. Thus, the plurality of low melting point metal layers easily embed clearances resulting from the shape comprising recess portions and projection portions of the surface of the semiconductor element dissimilarly to a case of employing a single low melting point metal layer.

摘要翻译： 通过将半导体激光元件安装在下降系统中的底座（基座）上形成的结构，可以获得能够提高可靠性的半导体激光器件。 该半导体激光器件包括形成在包括发光层的半导体元件的表面上的第一电极层，该发光层具有包括凹部和突出部的形状，安装有半导体元件的基底和设置有多个低熔点金属层 在形成在半导体元件的表面上的第一电极层和用于将形成在半导体元件的表面上的第一电极层与基底接合的基底之间。 因此，多个低熔点金属层与使用单个低熔点金属层的情况相比，容易地嵌入由包含凹部的形状和半导体元件的表面的突出部分形成的间隙。