公开(公告)号：US20100289584A1

公开(公告)日：2010-11-18

申请号：US12454326

申请日：2009-05-16

申请人： Ricardo Andres Aroca ,  Young-Kai Chen ,  Jaesik Lee

发明人： Ricardo Andres Aroca ,  Young-Kai Chen ,  Jaesik Lee

IPC分类号： H03F3/45

CPC分类号： H03F3/45475 ,  H03F3/08

摘要： An apparatus includes an electronic amplifier and an electrical feedback line, a plurality of electrical sources, and an electronic controller. The electrical feedback line connects an output of the electronic amplifier to an input thereof. The electrical sources connect to nodes on the electronic feedback line. The electronic controller is configured to adjust the electrical sources in a manner responsive to a current input to the electrical feedback line.

摘要翻译： 一种装置包括电子放大器和电反馈线，多个电源和电子控制器。 电反馈线将电子放大器的输出连接到其输入端。 电源连接到电子反馈线上的节点。 电子控制器被配置为以响应于电反馈线的电流输入的方式调整电源。

公开(公告)号：US20100214040A1

公开(公告)日：2010-08-26

申请号：US12392924

申请日：2009-02-25

申请人： Noriaki Kaneda ,  Yves Baeyens ,  Young-Kai Chen

发明人： Noriaki Kaneda ,  Yves Baeyens ,  Young-Kai Chen

IPC分类号： H01P1/203

CPC分类号： H01P1/20345

摘要： An electronic device includes a first strip conductor formed from a first metal level over a substrate. A second strip conductor formed from a second metal level is located between the first strip conductor and the substrate. At least one of the first and the second strip conductors includes a stripline portion and a microstrip line portion.

摘要翻译： 电子器件包括由衬底上的第一金属层形成的第一条状导体。 由第二金属层形成的第二带状导体位于第一带状导体和基底之间。 第一和第二带状导体中的至少一个包括带状线部分和微带线部分。

公开(公告)号：US07688872B2

公开(公告)日：2010-03-30

申请号：US12050225

申请日：2008-03-18

申请人： Young-Kai Chen ,  Mahmoud Rasras ,  Kun-Yii Tu

发明人： Young-Kai Chen ,  Mahmoud Rasras ,  Kun-Yii Tu

IPC分类号： H01S3/13

CPC分类号： H01S5/0687

摘要： A self-calibrating integrated photonic circuit and a method of controlling the same. In one embodiment, the circuit includes: (1) a substrate, (2) a laser located on the substrate and configured to produce source light at an output frequency, (3) a laser alignment sensor located on the substrate and including: (3a) a reference optical resonator configured to receive the source light, have a null proximate a predetermined center frequency and provide output light as a function of a relationship between the output frequency and the center frequency and (3b) a photodetector configured to provide an electrical signal of a magnitude that is based on the output light and (4) a calibration controller located on the substrate, coupled to the photodetector and configured to adjust the output frequency based on the magnitude.

摘要翻译： 一种自校准集成光子电路及其控制方法。 在一个实施例中，电路包括：（1）衬底，（2）位于衬底上并被配置为以输出频率产生光源的激光器，（3）位于衬底上的激光对准传感器，包括：（3a ）配置为接收源光的参考光学谐振器，具有接近预定中心频率的零点，并且作为输出频率和中心频率之间的关系的函数提供输出光，以及（3b）被配置为提供电信号 基于输出光的幅度和（4）位于衬底上的校准控制器，耦合到光电检测器并且被配置为基于大小来调整输出频率。

公开(公告)号：US07061414B2

公开(公告)日：2006-06-13

申请号：US10771089

申请日：2004-02-03

申请人： Young-Kai Chen ,  Andreas Leven ,  Kun-Yii Tu

发明人： Young-Kai Chen ,  Andreas Leven ,  Kun-Yii Tu

IPC分类号： H03M1/66

CPC分类号： G02F7/00 ,  G02F2201/18

摘要： An optical digital-to-analog conversion is realized by employing either a continuous wave or pulsed laser optical signal. The laser optical signal is split into a plurality of mutually coherent optical beams, which are phase shift modulated by bits of a digital data sequence to be converted to an analog signal. The phase shift modulated optical beams are recombined to realize the desired digital-to-analog converted optical signal.

摘要翻译： 通过采用连续波或脉冲激光光信号实现光数字到模拟转换。 激光光信号被分割成多个相互相干的光束，它们被数字数据序列的位进行相移调制以转换成模拟信号。 相移调制光束被重组以实现期望的数模转换光信号。

公开(公告)号：US20050269594A1

公开(公告)日：2005-12-08

申请号：US10859894

申请日：2004-06-03

申请人： Young-Kai Chen ,  Vincent Houtsma ,  Nils Weimann

发明人： Young-Kai Chen ,  Vincent Houtsma ,  Nils Weimann

IPC分类号： H01L21/331 ,  H01L21/8222 ,  H01L29/732 ,  H01L29/737 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/66242 ,  H01L29/66318 ,  H01L29/7371

摘要： Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound semiconductor composition layer doped to have the first charge carrier polarity and located on the second layer; a base electrode on the second layer; and a spacer ring interposed between and defining a charge carrier access path distance between the base electrode and the third layer, the path distance being within a range of between about 200 Å and about 1000 Å. Techniques for making apparatus. Apparatus is useful as a heterobipolar transistor, particularly for high frequency applications.

摘要翻译： 装置包括：掺杂以具有第一电荷载流子极性的第一化合物半导体组合物层; 第二化合物半导体组合物层，被掺杂以具有第二电荷载流子极性并位于第一层上; 第三化合物半导体组合物层，被掺杂以具有第一电荷载流子极性并位于第二层上; 第二层上的基极; 以及插入在基极和第三层之间并且限定基极和第三层之间的电荷载体存取路径距离的间隔环，路径距离在约和之间的范围内。 制造设备的技术。 器件可用作异双极晶体管，特别适用于高频应用。

公开(公告)号：US20050156195A1

公开(公告)日：2005-07-21

申请号：US11079166

申请日：2005-03-14

申请人： Young-Kai Chen ,  Lay-Lay Chua ,  Vincent Houtsma ,  Rose Kopf ,  Andreas Leven ,  Chun-Ting Liu ,  Wei-Jer Sung ,  Yang Yang

发明人： Young-Kai Chen ,  Lay-Lay Chua ,  Vincent Houtsma ,  Rose Kopf ,  Andreas Leven ,  Chun-Ting Liu ,  Wei-Jer Sung ,  Yang Yang

IPC分类号： H01L21/331 ,  H01L29/737 ,  H01L29/739 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： H01L29/66318 ,  H01L29/7371

摘要： A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.

公开(公告)号：US5977830A

公开(公告)日：1999-11-02

申请号：US974816

申请日：1997-11-20

申请人： Young-Kai Chen ,  George E. Georgiou

发明人： Young-Kai Chen ,  George E. Georgiou

IPC分类号： H01L27/02 ,  H03F1/26 ,  H03F3/16 ,  H01L27/10 ,  H03F3/08

CPC分类号： H03F1/26 ,  H01L27/0207 ,  H03F2200/294 ,  H03F2200/372

摘要： A low noise transistor IC or module comprises a plurality of conventional CMOS transistors which are laid out in parallel in such a way that the effective gate width of the combination of transistors is increased, yet the effective gate resistance and hence the noise figure (NF) of the circuit are reduced. A low noise amplifier incorporating such a module is also described.

摘要翻译： 低噪声晶体管IC或模块包括多个常规CMOS晶体管，它们并联布置，使得晶体管组合的有效栅极宽度增加，但是有效栅极电阻，因此噪声系数（NF） 的电路减少。 还描述了并入这种模块的低噪声放大器。

公开(公告)号：US5724005A

公开(公告)日：1998-03-03

申请号：US637999

申请日：1996-04-25

申请人： Young-Kai Chen ,  Jenshan Lin

发明人： Young-Kai Chen ,  Jenshan Lin

IPC分类号： H03G3/20 ,  H03F1/02 ,  H04B1/40 ,  H04B7/26 ,  H03G3/30

CPC分类号： H03F1/0261 ,  H03F2200/372

摘要： A dynamic power amplifier advantageously employed in a wireless terminal for transferring and receiving signals from a base terminal includes an input amplifier adapted to receive an input signal having a given power signal level corresponding to the distance of said wireless terminal to the terminal and adapted to provide an amplifier output signal having a given power output signal level. The dynamic amplifier further includes a power sensor configured to receive the power output signal and to generate a power indication signal corresponding to the power output signal, and a converter adapted to receive the power indication signal in order to generate a biasing signal corresponding to the power indication signal. The biasing signal is applied to the input amplifier so that the operating bias point of the power amplifier varies as a function of the power indication signal.

摘要翻译： 在无线终端中有利地用于从基站发送和接收信号的动态功率放大器包括输入放大器，其适于接收具有与所述无线终端到终端的距离相对应的给定功率信号电平的输入信号，并适于提供 具有给定功率输出信号电平的放大器输出信号。 动态放大器还包括功率传感器，其被配置为接收功率输出信号并产生对应于功率输出信号的功率指示信号，以及转换器，其适于接收功率指示信号，以产生对应于功率的偏置信号 指示信号。 偏置信号被施加到输入放大器，使得功率放大器的工作偏置点根据功率指示信号而变化。

公开(公告)号：US5213995A

公开(公告)日：1993-05-25

申请号：US869980

申请日：1992-04-16

申请人： Young-Kai Chen ,  Minghwei Hong ,  Joseph P. Mannaerts ,  Ming-Chiang Wu

发明人： Young-Kai Chen ,  Minghwei Hong ,  Joseph P. Mannaerts ,  Ming-Chiang Wu

IPC分类号： H01L21/203 ,  H01L21/20 ,  H01L33/00 ,  H01L33/06 ,  H01S5/00 ,  H01S5/20 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0245 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02546 ,  H01L33/0062 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/32316 ,  H01S5/3432 ,  Y10S438/925

摘要： A novel method of making articles that comprise a periodic heteroepitaxial semiconductor structure is disclosed. The method pertains to growth of the periodic structure by MBE, CVD or similar growth techniques, and involves periodically changing the substrate temperature. For instance, a periodic multilayer GaAs/AlGaAs is grown by MBE, with the substrate temperature cycled between 600.degree. C. and 700.degree. C. The novel method can produce multilayer structures of uniformly high material quality.

公开(公告)号：US5206524A

公开(公告)日：1993-04-27

申请号：US721913

申请日：1991-06-20

申请人： Young-Kai Chen ,  Anthony F. J. Levi ,  Richard N. Nottenburg ,  Morton Panish

发明人： Young-Kai Chen ,  Anthony F. J. Levi ,  Richard N. Nottenburg ,  Morton Panish

IPC分类号： H01L29/08 ,  H01L29/205 ,  H01L29/737

CPC分类号： H01L29/7371 ,  H01L29/0895 ,  H01L29/205

摘要： Improved heterojunction bipolar transistor (HBT) are disclosed. Inventive devices can attain high cut-off frequency (f.sub.T), exemplarily 80 GHz or higher, and high DC current gain (.beta.), exemplarily 25 or higher. The devices exhibit lateral scaling, permitting reduction in emitter stripe width without unacceptable decrease in .beta.. Exemplarily the stripe width is 1 .mu.m or less. The inventive HBTs are hot electron devices, with the hot electrons in the base region being spatially confined such that relatively few electrons reach the surface of the extrinsic base region. The relatively low bulk and surface recombination rate in the base of inventive HBTs is an important aspect of the invention and makes possible devices having relatively high .beta. and low power consumption. Appropriate choice of base material, namely, a semiconductor material having relatively low intrinsic surface recombination velocity, can result in further reduction of surface recombination, as can, for instance, the use of an appropriate non-alloyed metal base contact. Appropriate choice of collector material can result in improved ballistic transport through the collector depletion region, and novel selection criteria are disclosed. InP, InAs, and In.sub.0.53 Ga.sub.0.47 As are exemplary materials that meet these criteria. Use of a highly doped collector contact region, with dopant level within a relatively narrow concentration range, can also lead to improved device behavior, as can the use of a compound emitter that comprises one or more appropriately placed thin undoped heteroepitaxial layers.

摘要翻译： 公开了改进的异质结双极晶体管（HBT）。 本发明的器件可以获得例如80GHz或更高的高截止频率（fT）和高直流电流增益（β），示例性地为25或更高。 这些器件表现出横向缩放，允许发射极条宽度的减小，而β不会有不可接受的降低。 条纹宽度为1μm以下。 本发明的HBT是热电子器件，其中基极区中的热电子被空间限制，使得相对少的电子到达外部基极区域的表面。 本发明HBT的基底中相对较低的体积和表面复合速率是本发明的重要方面，并使得可能的器件具有相对较高的β和低功耗。 基本材料的适当选择，即具有相对低的固有表面复合速度的半导体材料可以导致表面复合的进一步减少，例如可以使用合适的非合金金属基底接触。 收集器材料的适当选择可以导致通过集电极耗尽区的改进的弹道输送，并且公开了新的选择标准。 InP，InAs和In0.53Ga0.47A是满足这些标准的示例性材料。 使用具有相对窄的浓度范围内的掺杂剂水平的高度掺杂的集电极接触区域也可以导致改进的器件特性，使用包括一个或多个适当放置的未掺杂异质外延层的复合发射极也是如此。