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    Digital lithography using real time quality control
    41.
    发明申请
    Digital lithography using real time quality control 有权
    数字光刻使用实时质量控制

    公开(公告)号：US20070035597A1

    公开(公告)日：2007-02-15

    申请号：US11204648

    申请日：2005-08-15

    申请人： Steven Ready ,  William Wong ,  Scott Limb

    发明人： Steven Ready ,  William Wong ,  Scott Limb

    IPC分类号： G01D11/00

    CPC分类号： B41J2/2139 ,  B81C99/0065 ,  B81C2201/0184 ,  B81C2201/0198

    摘要： A digital lithography system including a droplet source (printhead) for selectively ejecting liquid droplets of a phase-change masking material, and an imaging system for capturing (generating) image data representing printed features formed by the ejected liquid droplets. The system also includes a digital control system that detects defects in the printed features, for example, by comparing the image data with stored image data. The digital control system then modifies the printed feature to correct the defect, for example, by moving the printhead over the defect and causing the printhead to eject droplets onto the defect's location. In one embodiment, a single-printhead secondary printer operates in conjunction with a multi-printhead main printer to correct defects.

    摘要翻译： 一种数字光刻系统，包括用于选择性地喷射相变掩模材料的液滴的液滴源（打印头）和用于捕获（产生）表示喷射液滴形成的打印特征的图像数据的成像系统。 该系统还包括数字控制系统，其检测打印特征中的缺陷，例如通过将图像数据与存储的图像数据进行比较。 然后，数字控制系统修改打印的特征以校正缺陷，例如通过将打印头移动到缺陷上并使打印头将液滴喷射到缺陷的位置上。 在一个实施例中，单打印头二次打印机与多打印头主打印机一起操作以校正缺陷。

    Electrochemical fabrication methods for producing multilayer structures including the use of diamond machining in the planarization of deposits of material
    42.
    发明申请
    Electrochemical fabrication methods for producing multilayer structures including the use of diamond machining in the planarization of deposits of material 审中-公开
    用于生产多层结构的电化学制造方法，包括在平坦化材料沉积中使用金刚石加工

    公开(公告)号：US20050202180A1

    公开(公告)日：2005-09-15

    申请号：US11029165

    申请日：2005-01-03

    申请人： Adam Cohen ,  Uri Frodis ,  Michael Lockard ,  Ananda Kumar ,  Gang Zhang ,  Dennis Smalley

    发明人： Adam Cohen ,  Uri Frodis ,  Michael Lockard ,  Ananda Kumar ,  Gang Zhang ,  Dennis Smalley

    IPC分类号： B05D1/38 ,  C08K3/00 ,  C25D3/30 ,  C25D3/38 ,  C25D3/48 ,  C25D5/02 ,  C25D5/10 ,  C25D21/12 ,  H01L21/288 ,  H01L21/301 ,  H01L21/302 ,  H01L21/4763 ,  H01L21/768

    CPC分类号： C25D5/48 ,  B33Y10/00 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885 ,  Y10T156/1052

    摘要： Electrochemical fabrication methods for forming single and multilayer mesoscale and microscale structures are disclosed which include the use of diamond machining (e.g. fly cutting or turning) to planarize layers. Some embodiments focus on systems of sacrificial and structural materials which are useful in Electrochemical fabrication and which can be diamond machined with minimal tool wear (e.g. Ni—P and Cu, Au and Cu, Cu and Sn, Au and Cu, Au and Sn, and Au and Sn—Pb), where the first material or materials are the structural materials and the second is the sacrificial material). Some embodiments focus on methods for reducing tool wear when using diamond machining to planarize structures being electrochemically fabricated using difficult-to-machine materials (e.g. by depositing difficult to machine material selectively and potentially with little excess plating thickness, and/or pre-machining depositions to within a small increment of desired surface level (e.g. using lapping or a rough cutting operation) and then using diamond fly cutting to complete he process, and/or forming structures or portions of structures from thin walled regions of hard-to-machine material as opposed to wide solid regions of structural material.

    摘要翻译： 公开了用于形成单层和多层中尺度和微结构的电化学制造方法，其包括使用金刚石加工（例如飞切或车削）来平坦化层。 一些实施例集中于可用于电化学制造的牺牲和结构材料的系统，并且可以以最小的工具磨损（例如Ni-P和Cu，Au和Cu，Cu和Sn，Au和Cu，Au和Sn， 和Au和Sn-Pb），其中第一材料或材料是结构材料，第二材料是牺牲材料）。 一些实施例着重于在使用金刚石加工以平面化使用难以加工的材料进行电化学制造的结构（例如，通过沉积难以机械材料选择性且潜在地具有少量多余电镀厚度和/或预加工沉积 到所需表面水平的小增量（例如使用研磨或粗切割操作），然后使用金刚石飞切切割来完成其加工，和/或从硬质材料的薄壁区域形成结构或部分结构 而不是结构材料的宽固体区域。

    Thin film resistor etch
    43.
    发明申请
    Thin film resistor etch 审中-公开
    薄膜电阻蚀刻

    公开(公告)号：US20050003673A1

    公开(公告)日：2005-01-06

    申请号：US10612123

    申请日：2003-07-02

    申请人： Omid Mahdavi

    发明人： Omid Mahdavi

    IPC分类号： C23F4/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3213 ,  H01L21/461

    CPC分类号： H01L28/24 ,  B81C99/0065 ,  B81C2201/0138 ,  C23F4/00 ,  H01J37/32082 ,  H01L21/32136

    摘要： A thin film resistor is formed by employing a plasma etch on a resistor material layer. The resistor material layer can be fabricated employing a nickel chromium (NiCr) alloy, or nickel chromium aluminum (NiCrAl) alloy. A plasma etch is performed in a magnetically enhanced low pressure environment with a chlorine chemistry mixture. The magnetically enhanced low pressure environment and the sufficiently selective chlorine chemistry provide a substantially controlled plasma etch of the resistor material layer to form the thin film resistor. In-situ thickness measurements or an endpoint optical emission system can be employed to determine when to halt the etching process to mitigate damage associated with etching of the layer underlying the thin film resistor.

    摘要翻译： 通过在电阻材料层上采用等离子体蚀刻来形成薄膜电阻器。 可以使用镍铬（NiCr）合金或镍铬铝（NiCrAl）合金制造电阻材料层。 在具有氯化学混合物的磁增强低压环境中进行等离子体蚀刻。 磁增强的低压环境和足够选择的氯化学物质提供电阻材料层的基本上受控的等离子体蚀刻以形成薄膜电阻器。 可以使用原位厚度测量或端点光发射系统来确定何时停止蚀刻工艺以减轻与薄膜电阻器下面的层的蚀刻相关的损伤。

    Method for measuring etch rates during a release process
    47.
    发明申请
    Method for measuring etch rates during a release process 失效
    在释放过程中测量蚀刻速率的方法

    公开(公告)号：US20030124848A1

    公开(公告)日：2003-07-03

    申请号：US10265620

    申请日：2002-10-08

    申请人： APPLIED MATERIALS, INC.

    发明人： Jeffrey D. Chinn ,  Robert Z. Bachrach

    IPC分类号： H01L021/302 ,  H01L021/461

    CPC分类号： B81C1/00476 ,  B81C99/0065 ,  B81C2201/0142

    摘要： A method of determining the time to release of a movable feature in a multilayer substrate of silicon-containing materials including alternate layers of polysilicon and silicon oxide wherein a mass monitoring device determines the mass of a released feature, and the substrate is etched with anhydrous hydrogen fluoride until the substrate mass is equivalent to that of the released movable feature when the etch time is noted. A suitable mass monitoring device is a quartz crystal microbalance.

    摘要翻译： 一种确定在包含多晶硅和氧化硅的交替层的含硅材料的多层衬底中释放可移动特征的时间的方法，其中质量监测装置确定释放特征的质量，并且用无水氢氧化物蚀刻衬底 氟化物，直到当注意到蚀刻时间时，衬底质量等于释放的可移动特征的质量。 合适的质量监测装置是石英晶体微量天平。

    Method and devices for detecting the end point of plasma process
    48.
    发明授权
    Method and devices for detecting the end point of plasma process 失效
    用于检测等离子体工艺终点的方法和装置

    公开(公告)号：US5980767A

    公开(公告)日：1999-11-09

    申请号：US899864

    申请日：1997-07-24

    申请人： Chishio Koshimizu ,  Kimihiro Higuchi

    发明人： Chishio Koshimizu ,  Kimihiro Higuchi

    IPC分类号： G01N21/68 ,  H01L21/302

    CPC分类号： G01N21/68 ,  B81C1/00587 ,  B81C99/0065 ,  H01J37/32963 ,  H01J37/3299 ,  B81C2201/0142

    摘要： Disclosed herein is a method of detecting an end point of plasma process performed on an object, and a plasma process apparatus. The method includes the steps of detecting an emission spectrum over a wavelength region specific to C.sub.2 in the plasma, by optical detecting means, and determining the end point of the plasma process from the emission intensity of the emission spectrum detected by the optical detector. The apparatus has a process chamber, a pair of electrodes, a light-collecting device, an optical detector, and a determining device. The chamber has a monitor window. The electrodes are located in the process chamber. The first electrode is used to support the object. A high-frequency power is supplied between the electrodes to change a process gas into plasma. The light-collecting device collects the light from the plasma through the monitor window. The optical detector detects an emission spectrum from the light collected. The determining device determines the end point of the plasma process from the emission intensity of the emission spectrum detected. The monitor window is secured to the distal end of a cylindrical member protruding from the chamber. The member has a narrow gas passage for trapping a gas generated by the plasma process.

    摘要翻译： 本文公开了一种检测对物体进行的等离子体处理的终点的方法和等离子体处理装置。 该方法包括以下步骤：通过光学检测装置检测等离子体中C2特有的波长区域上的发射光谱，并根据由光学检测器检测到的发射光谱的发射强度来确定等离子体处理的终点。 该装置具有处理室，一对电极，光收集装置，光学检测器和确定装置。 该房间有一个监视器窗口。 电极位于处理室中。 第一个电极用于支撑物体。 在电极之间提供高频电力以将处理气体改变为等离子体。 集光装置通过监视窗收集来自等离子体的光。 光学检测器从所收集的光线检测发射光谱。 确定装置根据检测到的发射光谱的发射强度确定等离子体处理的终点。 监视器窗口固定到从腔室突出的圆柱形构件的远端。 该构件具有用于捕获由等离子体工艺产生的气体的窄气体通道。

    Micro-electro-mechanical structure (MEMS) capacitor devices, capacitor trimming thereof and design structures
    49.
    发明授权
    Micro-electro-mechanical structure (MEMS) capacitor devices, capacitor trimming thereof and design structures 有权
    微电子机械结构（MEMS）电容器件，其电容器修整和设计结构

    公开(公告)号：US08739096B2

    公开(公告)日：2014-05-27

    申请号：US13326409

    申请日：2011-12-15

    申请人： Christopher V. Jahnes ,  Anthony K. Stamper

    发明人： Christopher V. Jahnes ,  Anthony K. Stamper

    IPC分类号： G06F17/50 ,  H01L29/02

    CPC分类号： H01G5/18 ,  B81B2201/0221 ,  B81C99/0065 ,  H01G5/38 ,  H03H3/0076

    摘要： Micro-electro-mechanical structure (MEMS) capacitor devices, capacitor trimming for MEMS capacitor devices, and design structures are disclosed. The method includes identifying a process variation related to a formation of micro-electro-mechanical structure (MEMS) capacitor devices across a substrate. The method further includes providing design offsets or process offsets in electrode areas of the MEMS capacitor devices across the substrate, based on the identified process variation.

    摘要翻译： 公开了微电子机械结构（MEMS）电容器件，用于MEMS电容器件的电容器微调和设计结构。 该方法包括识别跨越衬底形成微机电结构（MEMS）电容器器件的过程变化。 该方法还包括基于所识别的过程变化，在跨越衬底的MEMS电容器器件的电极区域中提供设计偏移或过程偏移。

    Etching apparatus and methods
    50.
    发明授权
    Etching apparatus and methods 有权
    蚀刻装置和方法

    公开(公告)号：US08709268B2

    公开(公告)日：2014-04-29

    申请号：US13674482

    申请日：2012-11-12

    申请人： SPTS Technologies Limited

    发明人： Oliver James Ansell

    IPC分类号： G01L21/30 ,  G01R31/00

    CPC分类号： H01J37/32963 ,  B81C99/0065 ,  B81C2201/0135 ,  B81C2201/0142 ,  H01J37/32972 ,  H01L22/26

    摘要： A method of etching the whole width of a substrate to expose buried features is disclosed. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.

    摘要翻译： 公开了一种蚀刻衬底的整个宽度以暴露掩埋特征的方法。 该方法包括在其宽度上蚀刻衬底的表面以实现材料的基本上均匀的去除; 在蚀刻过程中照射蚀刻的面; 将边缘检测技术应用于从脸部反射或散射的光，以检测埋藏特征的外观; 以及响应于所述掩埋特征的检测来修改所述蚀刻。 还公开了一种用于蚀刻衬底跨越其宽度以暴露掩埋的蚀刻装置。