公开(公告)号：US20170175294A1

公开(公告)日：2017-06-22

申请号：US15316555

申请日：2015-06-05

申请人： University of Southampton

发明人： Frederic Yannick Gardes ,  Graham Trevor Reed ,  Callum George Johns

IPC分类号： C30B29/52 ,  C30B13/14 ,  C30B29/08 ,  C30B13/34 ,  C30B29/06 ,  C30B29/18 ,  H01L21/02 ,  C30B13/22

CPC分类号： C30B29/52 ,  C30B11/002 ,  C30B13/14 ,  C30B13/22 ,  C30B13/34 ,  C30B29/06 ,  C30B29/08 ,  C30B29/18 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02587 ,  H01L21/02625 ,  H01L21/02647 ,  H01L21/02667 ,  H01L21/02675

摘要： A method of fabricating at least one single-crystal alloy semiconductor structure, comprising: forming at least one seed on a substrate for growth of at least one single-crystal alloy semiconductor structure, the at least one seed containing an alloying material; providing at least one structural form on the substrate which is crystallized to form the at least one single-crystal alloy semiconductor structure, the at least one structural form being formed of a host material and comprising a main body which extends from the at least one seed and a plurality of elements which are connected in spaced relation to the main body; heating the at least one structural form such that the material of the at least one structural form has a liquid state; and cooling the at least one structural form, such that the material of the at least one structural form nucleates at the least one seed and crystallizes as a single crystal to provide at least one single-crystal alloy semiconductor structure, with a growth front of the single crystal propagating in the main body of the respective structural form away from the respective seed; wherein the plurality of elements of each structural form provide reservoirs of the alloying material in liquid state, such that successive ones of the plurality of elements act to maintain, in liquid state, an available supply of the alloying material to the growth front of the single crystal in the main body of the respective structural form.

公开(公告)号：US09624110B2

公开(公告)日：2017-04-18

申请号：US14742828

申请日：2015-06-18

申请人： CHANGZHOU UNIVERSITY

发明人： Xingmao Jiang ,  Tao Zhang ,  Hong Jia

IPC分类号： C01B33/12 ,  B01J19/18 ,  B01J19/00 ,  C01B33/18 ,  C30B7/10 ,  C30B29/18 ,  C30B29/60

CPC分类号： C01B33/126 ,  B01J19/0066 ,  B01J19/18 ,  B01J2219/00051 ,  B01J2219/00761 ,  C01B33/18 ,  C30B7/10 ,  C30B29/18 ,  C30B29/60

摘要： The present disclosure provides a method and apparatus for preparing high-purity crystalline silica particles by mixing colloidal silica with an organic base to form a mixed sol. The mixed sol is heated up to a reaction temperature of about 180 degrees Celsius or above, which is held for a reaction time of about 8 to about 168 hours for a hydrothermal synthesis process in the mixed sol. A gravitational setting or a centrifugation is performed on the mixed sol to provide precipitates from the mixed sol. The precipitates are washed with deionized water to remove residual organic base. The washed precipitates are dried at about 60 to about 80 degrees Celsius and are collected and packaged to obtain high-purity crystalline silica particles.

公开(公告)号：US20160160389A1

公开(公告)日：2016-06-09

申请号：US15046726

申请日：2016-02-18

申请人： Murata Manufacturing Co., Ltd.

发明人： MASATOSHI NISHIMOTO ,  Yu Shirai ,  Sugao Yamaguchi ,  Takumi Shitara

IPC分类号： C30B33/06 ,  C30B7/10

CPC分类号： C30B33/06 ,  C30B7/10 ,  C30B29/18

摘要： An artificial crystal growth method that includes applying a pressure that causes at least two substantially rectangular-parallelepiped-shaped crystal substrates to abut each other in an X-axis direction with crystallographic axis directions of the crystal substrates aligned with each other, and causing the at least two crystal substrates to grow an artificial crystal in a state where the pressure is being applied.

摘要翻译： 一种人造晶体生长方法，包括施加使至少两个基本上呈矩形的平行六面体形状的晶体基板的压力在X轴方向上彼此抵接，所述晶体基板的晶轴方向彼此对准，并且使得 至少两个晶体衬底，以在施加压力的状态下生长人造晶体。

公开(公告)号：US09317015B2

公开(公告)日：2016-04-19

申请号：US14071961

申请日：2013-11-05

申请人： Nivarox-FAR S.A.

发明人： Marc Stranczl ,  Thierry Hessler

IPC分类号： G04B15/12 ,  G04B15/14 ,  G04B17/26 ,  C30B1/10 ,  C30B29/18

CPC分类号： G04B15/14 ,  C30B1/10 ,  C30B29/18 ,  G04B15/12 ,  G04B17/26

摘要： Anti-trip mechanism for limiting the travel of a timepiece balance including a pin projecting from a staff, including a flexible multistable or bistable element carrying an anti-trip stop member and which is fixed, via flexible and elastic connecting members, to a rigid structural element of a timepiece movement. One end of said anti-trip stop member is arranged, according to the angular position of the balance, to interfere with the trajectory of the pin, and to perform the function of a stop if the balance exceeds its normal angular travel.Each anti-trip stop member includes two arms whose respective ends each interfere with the trajectory of the pin.

摘要翻译： 用于限制包括从工作人员突出的销的行程的防跳闸机构，包括通过柔性和弹性连接构件固定的通过柔性和弹性连接构件固定的柔性多态或双稳态元件到刚性结构 钟表机芯元素。 所述防跳闸止动构件的一端根据天平的角度位置被布置成干涉销的轨迹，并且如果平衡超过其正常的角行程则执行停止的功能。 每个防跳闸止动构件包括两个臂，其各自的端部各自干扰销的轨迹。

公开(公告)号：US08936685B2

公开(公告)日：2015-01-20

申请号：US13394284

申请日：2010-08-20

申请人： Toshiaki Sudo ,  Makiko Kodama ,  Minoru Kanda ,  Hiroshi Kishi

发明人： Toshiaki Sudo ,  Makiko Kodama ,  Minoru Kanda ,  Hiroshi Kishi

IPC分类号： C30B15/10 ,  C03B19/09 ,  C30B29/06 ,  C30B35/00 ,  C30B29/18

CPC分类号： C03B19/095 ,  C30B15/10 ,  C30B29/06 ,  C30B29/18 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/1032

摘要： The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11a provided on the crucible upper portion, and a second opaque vitreous silica portion 11b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion. The particle size distribution of the material silica powder for the first opaque vitreous silica portion 11a is wider than that of the second opaque vitreous silica portion 11b, and the material silica powder for the first opaque vitreous silica portion 11a includes more fine powder than that for the second opaque vitreous silica portion 11b.

摘要翻译： 本发明提供一种可以在拉拔硅单晶时抑制坩埚在高温下的侧壁降低的石英玻璃坩埚，以及制造这种石英玻璃坩埚的方法。 玻璃状石英玻璃坩埚10包括设置在坩埚的外表面侧并且含有大量气泡的不透明玻璃状石英层11和设置在内表面侧的透明氧化硅玻璃层12。 不透明玻璃状石英层11包括设置在坩埚上部的第一不透明玻璃状石英部分11a和设置在坩埚下部的第二不透明玻璃状石英部分11b。 第二不透玻璃状二氧化硅部11b的比重为1.7〜2.1，第一不透明玻璃状石英部11a的比重为1.4〜1.8，小于第二不透明玻璃状二氧化硅部的比重。 用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末的粒度分布比第二不透明玻璃状二氧化硅部分11b的粒度分布宽，并且用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末包含比 第二不透明玻璃状石英部分11b。

公开(公告)号：US08257675B2

公开(公告)日：2012-09-04

申请号：US12336017

申请日：2008-12-16

申请人： Noriyuki Agata ,  Shinya Kikugawa ,  Yutaka Shimizu ,  Kazumi Yoshida ,  Masatoshi Nishimoto

发明人： Noriyuki Agata ,  Shinya Kikugawa ,  Yutaka Shimizu ,  Kazumi Yoshida ,  Masatoshi Nishimoto

IPC分类号： C01B33/12

CPC分类号： C03C3/06 ,  C03C2201/02 ,  C03C2201/32 ,  C03C2201/50 ,  C30B7/10 ,  C30B29/18 ,  Y10T117/1008

摘要： An object of the present invention is to provide an artificial quartz member inhibited from suffering the decrease in transmittance in a laser light wavelength region which is caused by long-term irradiation with a laser light having a wavelength of 200 nm or shorter; and a process for producing the artificial quartz member. The invention provides an artificial quartz member for use as an optical element to be irradiated with a laser light having a wavelength of 200 nm or shorter, having an aluminum content of 200 ppb or lower.

摘要翻译： 本发明的目的在于提供一种人造石英部件，该人造石英部件由于长时间照射波长为200nm以下的激光而导致的激光波长区域的透射率降低; 以及人造石英部件的制造方法。 本发明提供一种人造石英部件，其用作要用200ppm或更低的铝含量的波长为200nm或更短的激光照射的光学元件。

公开(公告)号：US07485238B2

公开(公告)日：2009-02-03

申请号：US11115153

申请日：2005-04-27

申请人： Syunsuke Satoh ,  Hozumi Nakata

发明人： Syunsuke Satoh ,  Hozumi Nakata

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H03H9/215 ,  C30B29/18 ,  C30B33/00 ,  C30B33/08 ,  H01L41/332 ,  H03H3/08

摘要： In a state in which respective portions of a quartz wafer have been masked by a plurality of kinds of mask layers that have respectively different etching rates, the quartz wafer is subjected to an etching process. Since the etching operation is started earlier at a first portion which is masked by the mask layer having a high etching rate, the amount of etching is increased at the first portion. In contrast, the start of the etching operation is delayed at a second portion which is masked by the mask layer having a low etching rate, and the amount of etching is reduced at the second portion. Thus, it becomes possible to form the quartz wafer into a desired shape.

摘要翻译： 在石英晶片的各个部分被具有不同蚀刻速率的多种掩模层掩蔽的状态下，对石英晶片进行蚀刻处理。 由于蚀刻操作在由蚀刻速率高的掩模层掩蔽的第一部分较早地开始，所以在第一部分处蚀刻量增加。 相反，蚀刻操作的开始在被蚀刻速率低的掩模层掩蔽的第二部分被延迟，并且在第二部分处蚀刻量减少。 因此，可以将石英晶片形成为期望的形状。

公开(公告)号：US07459334B2

公开(公告)日：2008-12-02

申请号：US11341745

申请日：2006-01-27

申请人： Kiyoshi Aratake

发明人： Kiyoshi Aratake

IPC分类号： H01L21/00

CPC分类号： H03H3/02 ,  C30B29/18 ,  C30B33/08 ,  G04F5/063 ,  G04G21/04 ,  G04R20/10

摘要： A method of manufacturing a quartz crystal vibrating piece is provided. Etching masks of different sizes are each arranged on respective front and rear surfaces of a quartz crystal wafer such that the etching mask on one of the surfaces (e.g., the rear surface) is larger than the other etching mask. The quartz crystal wafer is etched using the etching masks so that a projection is formed on a side of the quartz crystal wafer due to the difference in size of the etching masks, and is overetched to remove the projection.

摘要翻译： 提供一种制造石英振动片的方法。 不同尺寸的蚀刻掩模各自布置在石英晶片的相应的前表面和后表面上，使得其中一个表面（例如，后表面）上的蚀刻掩模大于另一个蚀刻掩模。 使用蚀刻掩模蚀刻石英晶片，使得由于蚀刻掩模的尺寸的差异而在石英晶片的一侧上形成突起，并且被过蚀刻以去除突起。

公开(公告)号：US07311777B2

公开(公告)日：2007-12-25

申请号：US10926057

申请日：2004-08-26

申请人： Naoyuki Takahashi ,  Takato Nakamura ,  Satoshi Nonaka ,  Yoshinori Kubo ,  Yoichi Shinriki ,  Katsumi Tamanuki

发明人： Naoyuki Takahashi ,  Takato Nakamura ,  Satoshi Nonaka ,  Yoshinori Kubo ,  Yoichi Shinriki ,  Katsumi Tamanuki

IPC分类号： G02B6/13

CPC分类号： C30B29/18 ,  C30B25/02

摘要： A process for manufacturing a quartz crystal element consists of the steps of producing plural quartz layers on a surface of a crystalline substrate having a lattice constant differing from that of quartz crystal, in which each of the quartz layers consists of a crystalline phase and an amorphous phase, and percentage of the crystalline phase in the quartz layer farther from the substrate is larger than percentage of the crystalline phase in the quartz layer adjacent to the substrate; and producing an epitaxially grown quartz crystal film on the surface of the quartz layer farther from the substrate by a reaction between silicon alkoxide and oxygen.

摘要翻译： 一种制造石英晶体元件的方法包括以下步骤：在具有与石英晶体不同的晶格常数的晶体衬底的表面上形成多个石英层，其中每个石英层由结晶相和非晶形 石英层中的结晶相的相位和百分比远离基板，大于与基板相邻的石英层中的结晶相的百分比; 并且通过硅氧烷和氧之间的反应在石英层的表面上离开衬底产生外延生长的石英晶体膜。

公开(公告)号：US20040173141A1

公开(公告)日：2004-09-09

申请号：US10652073

申请日：2003-09-02

申请人： NIHON DEMPA KOGYO CO., LTD.

发明人： Shigeru Obara ,  Genwa Koki ,  Kouichi Hara

IPC分类号： C30B001/00

CPC分类号： H03H9/19 ,  C30B29/18 ,  C30B33/00 ,  H03H9/02023 ,  Y10T117/10

摘要： An IT-cut quartz crystal unit has a discoidal or a rectangular quartz crystal blank which is cut from a crystal of quartz along a plane perpendicular to the Y-axis of the crystal of the quartz which is rotated over approximately 34null about the X-axis, and further rotated from this rotated position over approximately 19null about the Z-axis. Excitation electrodes are formed on both main surface of the crystal blank, respectively. The crystal blank is held at positions in at least one set of opposing peripheral regions selected from an angular range of 18nullnull18null from the Znull-axis on the surface of the crystal blank, viewed from the center on the surface of the crystal blank; an angular range of 198nullnull18null from the Znull-axis; an angular range of 108nullnull18null from the Znull-axis; and an angular range of 288nullnull18null from the Znull-axis.

摘要翻译： IT切割石英晶体单元具有圆形或矩形石英晶体空白，其沿着与石英晶体的Y轴垂直的平面从石英晶体切割，该晶体围绕X轴旋转约34度， 并且从该旋转位置进一步围绕Z轴旋转大约19°。 激发电极分别形成在晶体坯的两个主表面上。 晶体坯料被保持在至少一组相对的周边区域中的位于晶体坯料的表面上的Z'轴的18°±18°的角度范围内的位置处，从 水晶空白; 与Z'轴的角度范围为198°±18°; 与Z'轴的角度范围为108°±18°; 与Z'轴的角度范围为288°±18°。