公开(公告)号：US4827130A

公开(公告)日：1989-05-02

申请号：US111832

申请日：1987-10-22

Applicant: Charles W. Reno

Inventor： Charles W. Reno

IPC: G01J5/08 ,  G01J5/28 ,  G02B13/14 ,  G02B23/12 ,  G01J1/42

CPC classification number: G02B13/22 ,  G01J5/061 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/28 ,  G02B13/14 ,  G02B23/12 ,  G01J2005/283

Abstract: An infrared imager includes an array of imager elements. Infrared radiation is focussed onto the array by a lens assembly including a plurality of lens elements. The imager array and the lens are within a cold box which includes an infrared-transparent window. For low noise, a spectrum-limiting filter is also located within the cold box, between the lens assembly and the window, at or within the pupil relief distance of the lens assembly. The pupil relief distance is extended by the use of at least one aspheric surface for one of the lens elements of the lens assembly. The mounting structure of the filter is the aperture stop for the infrared imager. The field of view may be reduced, if desired, without significant effect on the noise performance by use of a telescope including a second lens assembly optically identical to the first lens assembly, operated in conjunction with a confocal large-diameter lens assembly.

Abstract translation: 红外成像仪包括一组成像元件。 通过包括多个透镜元件的透镜组件将红外辐射聚焦到阵列上。 成像器阵列和透镜在包括红外透明窗的冷箱内。 对于低噪声，频谱限制滤波器也位于透镜组件和瞳孔释放距离之间或之内的冷盒中，在透镜组件和窗口之间。 通过使用透镜组件的透镜元件中的一个的至少一个非球面来延长光瞳释放距离。 过滤器的安装结构是红外成像仪的孔径光阑。 如果需要，可以通过使用包括与第一透镜组件光学相同的第二透镜组件的望远镜结合共焦大直径透镜组件来操作，可以减少视场，而不会对噪声性能产生显着影响。

公开(公告)号：US3554818A

公开(公告)日：1971-01-12

申请号：US3554818D

申请日：1968-04-25

Applicant: AVCO CORP

Inventor： LAMBERT VERNON L ,  GRI NORMAN J

IPC: G01J5/28 ,  H01L21/00 ,  H01L23/29 ,  H01L27/00 ,  H01L31/00 ,  H01L31/103 ,  H01L7/36 ,  H01L7/44

CPC classification number: H01L31/1035 ,  G01J5/28 ,  H01L21/00 ,  H01L23/291 ,  H01L24/05 ,  H01L27/00 ,  H01L31/00 ,  H01L2224/05552 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2924/14 ,  Y10S148/005 ,  Y10S148/02 ,  Y10S148/022 ,  Y10S148/051 ,  Y10S148/065 ,  Y10S148/08 ,  Y10S148/118 ,  Y10S148/12 ,  H01L2924/00

Abstract: THE INVENTION HERE DISCLOSED IS AN INDIUM ANTIMONIDE INFRARED DETECTOR AND A PROCESS FOR MAKING THE SAME. A DIFFUSION PROCESS YIELDS A VERY SHALLOW P-REGION ON AN N-TYPE INDIUM ANTIMONIDE SUBSTRATE. THIS LAYER HAS A THICKNESS OF 1.0 TO .5 MICRON AND HAS A HIGH CONCENTRATION OF ACCEPTORS, PROVIDING A VERY EFFICIENT COLLECTION REGION OF CARRIER CREATED BY PHOTON ABSORPTION. THE LAYER IS OF CADMIUM OR ZINC AND THE CONCENTRATION IS WITHIN A RANGE SUCH THAT WHILE LATTICE DAMAGE OCCURS DETECTOR OPERATION IS NOT IMPAIRED. THE LAYER IS SO SHALLOW THE MOST OF THE CARRIER CREATED BY PHOTON ABSORPTION ARE COLLECTED.

公开(公告)号：US3106692A

公开(公告)日：1963-10-08

申请号：US24024162

申请日：1962-11-27

Applicant: MCNANEY JOSEPH T

Inventor： MCNANEY JOSEPH T

IPC: G01J5/28

CPC classification number: G01J5/28 ,  Y10S430/145 ,  Y10S430/165

公开(公告)号：US3080542A

公开(公告)日：1963-03-05

申请号：US78481359

申请日：1959-01-02

Applicant: SANTA BARBARA RES CT

Inventor： LONG JASPER J

IPC: G01J5/28

CPC classification number: G01J5/28 ,  Y10T29/49101

公开(公告)号：US2792484A

公开(公告)日：1957-05-14

申请号：US26242651

申请日：1951-12-19

Applicant: GEN ELECTRIC

Inventor： GUREWITSCH ANATOLE M ,  DUNLAP JR WILLIAM C

IPC: G01J5/28

CPC classification number: G01J5/28

公开(公告)号：US20240192059A1

公开(公告)日：2024-06-13

申请号：US18554076

申请日：2022-05-06

Applicant: trinamiX GmbH

Inventor： Tobias BAUMGARTNER ,  Sourabh KULKARNI ,  Celal Mohan OEGUEN

IPC: G01J5/28 ,  G01J5/06 ,  G01J5/52

CPC classification number: G01J5/28 ,  G01J5/06 ,  G01J5/52 ,  G01J2005/065 ,  G01J2005/283

Abstract: The present invention refers to a device (112) for monitoring an emission temperature of at least one radiation emitting element (114), a heating system (110) for heating at the least one radiation emitting element (114) to emit thermal radiation at an emission temperature, a method for monitoring an emission temperature of at least one radiation emitting element (114) and method for heating the at least one radiation emitting element (114) to emit thermal radiation at an emission temperature. Herein, the device (112) for monitoring an emission temperature of at least one radiation emitting element (114) comprises—at least one light source (125), wherein the light source is configured to emit optical radiation at least partially towards the at least one radiation emitting element (114); —at least one radiation sensitive element (126), wherein the at least one radiation sensitive element (126) has at least one sensor region (128), wherein the at least one sensor region (128) comprises at least one photosensitive material selected from at least one photoconductive material, wherein the at least one sensor region (128) is designated for generating at least one sensor signal depending on an intensity of the thermal radiation emitted by the at least one radiation emitting element (114) and received by the sensor region (128) within at least one wavelength range, wherein the sensor region (128) is further designated for generating at least one further sensor signal depending on an intensity of the optical radiation emitted by the at least one light source (125) and received by the sensor region (128) within at least one further wavelength range, wherein the at least one radiation sensitive element (126) is arranged in a manner that the thermal radiation travels through at least one transition material (116) prior to being received by the at least one radiation sensitive element (126), wherein at least one of the at least one light source (125) and the at least one radiation sensitive element (126) is arranged in a manner that the optical radiation travels through the at least one transition material (116) and impinges the at least one radiation emitting element (114) prior to being received by the at least one radiation sensitive element (126); and—at least one evaluation unit (138), wherein the at least one evaluation unit (138) is configured to determine the emission temperature of the at least one radiation emitting element (114) by using values for the intensity of the thermal radiation and the optical radiation.

公开(公告)号：US20190204216A1

公开(公告)日：2019-07-04

申请号：US16200352

申请日：2018-11-26

Applicant: IMEC vzw ,  Stichting IMEC Nederland

Inventor： Peter Offermans ,  Joris Van Campenhout

IPC: G01N21/3586 ,  G01J3/02 ,  G01J1/04 ,  G01J1/44 ,  G01J3/42 ,  H01L31/09 ,  G02B6/122

CPC classification number: G01N21/3586 ,  G01J1/0407 ,  G01J1/44 ,  G01J3/0205 ,  G01J3/42 ,  G01J5/0818 ,  G01J5/0837 ,  G01J5/10 ,  G01J5/28 ,  G02B6/12 ,  G02B6/1228 ,  G02F2203/13 ,  H01L31/09

Abstract: A solid-state device for photo detection, in general, of terahertz radiation is disclosed. One aspect is a detector device comprising a body having a photoconductive material, a first antenna element connected to a first portion of the body, and a second antenna element connected to a second portion of the body. The first antenna element and the second antenna element are arranged to induce an electric field in the body in response to an incident signal. Further, the device has a waveguide arranged to couple light into the photoconductive material via a coupling interface between the waveguide and the body, where the coupling interface faces away from the first portion and the second portion of the body and is closer to the first portion than to the second portion.

公开(公告)号：US20180308998A1

公开(公告)日：2018-10-25

申请号：US15492267

申请日：2017-04-20

Applicant: King Abdulaziz University

Inventor： Wageh SWELM ,  Fahrettin Yakuphanoglu ,  Ahmed A. Al-Ghamdi ,  Yusuf Abdulaziz Al-Turki

IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/072 ,  H01L31/0336 ,  H01L31/18 ,  G01J1/42

CPC classification number: H01L31/035218 ,  G01J1/42 ,  G01J5/0853 ,  G01J5/28 ,  G01J2001/4266 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/072 ,  H01L31/109 ,  H01L31/18 ,  Y02E10/50

Abstract: A photodiode comprising a photoactive spinel oxide layer is described. This photoactive spinel oxide layer forms a contact with both a light absorption layer of quantum dots, quantum wires, or quantum rods, and an inorganic substrate layer. In some embodiments, the inorganic substrate layer and the photoactive spinel oxide layer form an isotype junction. Methods of characterizing the photodiode are provided and demonstrate commercially relevant electrical and optoelectronic properties, particularly the ability to operate as a photodetector with a high photosensitivity. An economical process for preparing the photodiode is provided as well as applications.

公开(公告)号：US20170131148A1

公开(公告)日：2017-05-11

申请号：US15156115

申请日：2016-05-16

Applicant: Massachusetts Institute of Technology ,  Trustees of Boston University

Inventor： Harold Y. Hwang ,  Mengkun Liu ,  Richard D. Averitt ,  Keith A. Nelson ,  Aaron Sternbach ,  Kebin Fan

IPC: G01J5/28 ,  H01L27/146 ,  G01J5/20

CPC classification number: G01J5/28 ,  G01J5/20 ,  G01J2005/0077 ,  G01J2005/202 ,  G01J2005/283 ,  G01J2005/286 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14669 ,  H01L31/09

Abstract: An apparatus for detecting electromagnetic radiation within a target frequency range is provided. The apparatus includes a substrate and one or more resonator structures disposed on the substrate. The substrate can be a dielectric or semiconductor material. Each of the one or more resonator structures has at least one dimension that is less than the wavelength of target electromagnetic radiation within the target frequency range, and each of the resonator structures includes at least two conductive structures separated by a spacing. Charge carriers are induced in the substrate near the spacing when the resonator structures are exposed to the target electromagnetic radiation. A measure of the change in conductivity of the substrate due to the induced charge carriers provides an indication of the presence of the target electromagnetic radiation.

公开(公告)号：US09296641B2

公开(公告)日：2016-03-29

申请号：US13666644

申请日：2012-11-01

Applicant: Owens-Brockway Glass Container Inc.

Inventor： Roger P. Smith ,  Carol A. Click ,  Rebecca Mullen ,  Stephen Daniel Barton

IPC: C03C4/02 ,  C03B32/00 ,  G01J5/28 ,  C03C3/087 ,  G01N33/38 ,  G01N21/90

CPC classification number: G01N21/958 ,  C03B32/00 ,  C03C3/087 ,  C03C4/02 ,  G01J5/28 ,  G01N21/8806 ,  G01N21/909 ,  G01N33/386 ,  G01N2021/8845 ,  Y10T428/131

Abstract: A soda-lime-silica glass container and related methods of manufacturing. A black-strikable glass composition having a base glass portion and a latent colorant portion is prepared. The base glass portion includes soda-lime-silica glass materials and one or more blue colorant materials, and the latent colorant portion includes cuprous oxide (Cu2O), stannous oxide (SnO), bismuth oxide (Bi2O3), and carbon (C). Glass containers may be formed from the black-strikable glass composition, and these glass containers may be heated to a temperature greater than 600 degrees Celsius to strike black therein. The glass containers formed from the black-strikable glass composition may be inspected—before or after striking—by infrared inspection equipment.

Abstract translation: 钠钙硅玻璃容器及相关制造方法。 制备具有基底玻璃部分和潜着色剂部分的黑色可蚀刻玻璃组合物。 基础玻璃部分包括钠钙石英玻璃材料和一种或多种蓝色着色剂材料，潜着色剂部分包括氧化亚铜（Cu 2 O），氧化亚锡（SnO），氧化铋（Bi 2 O 3）和碳（C）。 玻璃容器可以由黑色玻璃组合物形成，并且这些玻璃容器可以被加热到大于600摄氏度的温度以在其中发黑。 由黑色可见玻璃组合物形成的玻璃容器可以在通过红外检测设备打击之前或之后进行检查。