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    IN-SITU LOW-K CAPPING TO IMPROVE INTEGRATION DAMAGE RESISTANCE
    52.
    发明申请
    IN-SITU LOW-K CAPPING TO IMPROVE INTEGRATION DAMAGE RESISTANCE 审中-公开
    IN-SITU LOW-K CAPPING提高集成耐损伤性

    公开(公告)号：US20120156890A1

    公开(公告)日：2012-06-21

    申请号：US13305559

    申请日：2011-11-28

    Applicant: KANG SUB YIM ,  Jin XU ,  Sure NGO ,  Alexandros T. DEMOS

    Inventor： KANG SUB YIM ,  Jin XU ,  Sure NGO ,  Alexandros T. DEMOS

    IPC: H01L21/3105

    CPC classification number: H01L21/02214 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/7682 ,  H01L21/76829 ,  H01L2221/1047

    Abstract: A method and apparatus for forming low-k dielectric layers that include air gaps is provided. In one embodiment, a method of processing a substrate is provided. The method comprises disposing a substrate within a processing region, reacting an organosilicon compound, with an oxidizing gas, and a porogen providing precursor in the presence of a plasma to deposit a porogen containing low-k dielectric layer comprising silicon, oxygen, and carbon on the substrate, depositing a porous dielectric capping layer comprising silicon, oxygen and carbon on the porogen containing low-k dielectric layer, and ultraviolet (UV) curing the porogen containing low-k dielectric layer and the porous dielectric capping layer to remove at least a portion of the porogen from the porogen containing low-k dielectric layer through the porous dielectric capping layer to convert the porogen containing low-k dielectric layer to a porous low-k dielectric layer having air gaps.

    Abstract translation: 提供了一种用于形成包括气隙的低k电介质层的方法和装置。 在一个实施例中，提供了一种处理衬底的方法。 该方法包括在等离子体存在下将处理区域内的底物，有机硅化合物与氧化气体和造孔剂提供前体反应，将含有硅，氧和碳的低k电介质层的致孔剂沉积在 在包含低k电介质层的致孔剂上沉积包含硅，氧和碳的多孔电介质覆盖层，以及紫外线（UV）固化包含低k电介质层的致孔剂和多孔介电覆盖层以除去至少一个 致孔剂部分由含有低k电介质层的致孔剂穿过多孔介电覆盖层，以将含有低介电常数的介电层转化为具有气隙的多孔低k电介质层。

    METHOD AND APPARATUS FOR MODULATING WAFER TREATMENT PROFILE IN UV CHAMBER
    53.
    发明申请
    METHOD AND APPARATUS FOR MODULATING WAFER TREATMENT PROFILE IN UV CHAMBER 有权
    用于调节UV室中的水处理轮廓的方法和装置

    公开(公告)号：US20120132618A1

    公开(公告)日：2012-05-31

    申请号：US13301558

    申请日：2011-11-21

    Applicant: SANJEEV BALUJA ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos

    Inventor： SANJEEV BALUJA ,  Juan Carlos Rocha-Alvarez ,  Alexandros T. Demos

    IPC: C23F1/08 ,  G02B5/22 ,  C23F1/00 ,  C23C16/48 ,  C08J7/18

    CPC classification number: G02B5/22 ,  G02B5/208 ,  H01L21/67115

    Abstract: A method and apparatus for providing a uniform UV radiation irradiance profile across a surface of a substrate is provided. In one embodiment, a substrate processing tool includes a processing chamber defining a processing region, a substrate support for supporting a substrate within the processing region, an ultraviolet (UV) radiation source spaced apart from the substrate support and configured to transmit ultraviolet radiation toward the substrate positioned on the substrate support, and a light transmissive window positioned between the UV radiation source and the substrate support, the light transmissive window having an optical film layer coated thereon. In one example, the optical film layer has a non-uniform thickness profile in a radial direction, wherein a thickness of the optical film layer at the peripheral area of the light transmissive window is relatively thicker than at the center region of the optical film layer.

    Abstract translation: 提供了一种用于在衬底的表面上提供均匀的UV辐射辐照度分布的方法和装置。 在一个实施例中，衬底处理工具包括限定处理区域的处理室，用于支撑处理区域内的衬底的衬底支撑件，与衬底支撑件间隔开并且被配置成向衬底支撑件发射紫外线辐射的紫外线（UV）辐射源 位于基板支撑件上的基板和位于UV辐射源和基板支撑件之间的透光窗口，透光窗口具有涂覆在其上的光学膜层。 在一个示例中，光学膜层在径向上具有不均匀的厚度分布，其中在透光窗的周边区域处的光学膜层的厚度比在光学膜层的中心区域处的厚度更厚 。

    PROCESS FOR LOWERING ADHESION LAYER THICKNESS AND IMPROVING DAMAGE RESISTANCE FOR THIN ULTRA LOW-K DIELECTRIC FILM
    54.
    发明申请
    PROCESS FOR LOWERING ADHESION LAYER THICKNESS AND IMPROVING DAMAGE RESISTANCE FOR THIN ULTRA LOW-K DIELECTRIC FILM 审中-公开
    降低粘结层厚度的方法，提高薄膜超低介电膜的耐损伤性

    公开(公告)号：US20120121823A1

    公开(公告)日：2012-05-17

    申请号：US12945625

    申请日：2010-11-12

    Applicant: MAHENDRA CHHABRA ,  Kang Sub Yim ,  Alexandros T. Demos

    Inventor： MAHENDRA CHHABRA ,  Kang Sub Yim ,  Alexandros T. Demos

    IPC: C23C8/06

    CPC classification number: C23C16/401 ,  C23C8/10 ,  C23C16/45523 ,  C23C16/56

    Abstract: An improved method for depositing an ultra low dielectric constant film stack is provided. Embodiments of the invention minimize k (dielectric constant) impact from initial stages of depositing the ultra low dielectric constant film stack by reducing a thickness of an oxide adhesion layer in the ultra low dielectric film stack (

    Abstract translation: 提供了一种用于沉积超低介电常数膜堆叠的改进方法。 本发明的实施例通过将超低介电膜堆叠（<2k）中的氧化物粘附层的厚度减小到大约或小于200来来最小化沉积超低介电常数膜堆叠的初始阶段的k（介电常数）冲击 从而将薄膜叠层的厚度不均匀性降低到小于2％。 改进的方法在较低的沉积速率和较低的等离子体密度下结合较高的总流速沉积了超低介电膜堆叠中的氧化物粘附层和本体层，从而在膜沉积期间共同沉积物质的更好的填充/排序 这导致较高的机械强度和较低的孔隙率。 改进的粘附层提供高粘附能量，以更好地与超低介电常数膜粘合到下面的阻挡层/衬层层上。 所得到的低电介质膜具有纳米尺寸的孔和更紧密的孔径分布，产生介电常数为约2.5或更小的低介电常数膜。

    Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor deposition
    55.
    发明授权
    Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor deposition 有权
    通过等离子体增强化学气相沉积法制备具有高机械性能的K <2.2的超低K膜的硅前体

    公开(公告)号：US07998536B2

    公开(公告)日：2011-08-16

    申请号：US11777185

    申请日：2007-07-12

    Applicant: Kang Sub Yim ,  Alexandros T. Demos

    Inventor： Kang Sub Yim ,  Alexandros T. Demos

    IPC: C23C16/00 ,  B05D3/00 ,  B29C71/02 ,  B29C71/04 ,  C04B41/00 ,  C08J7/18

    CPC classification number: C23C16/401 ,  C23C16/56

    Abstract: A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—CX—Si or —Si—O—(CH2)n—O—Si—. Low dielectric constant films provided herein include films that include Si—CX—Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.

    Abstract translation: 提供了一种在基片上沉积低介电常数膜的方法。 低介电常数膜通过包括使一种或多种有机硅化合物和致孔剂反应的方法沉积，然后对膜进行后处理以在膜中产生孔。 一种或多种有机硅化合物包括具有通式结构Si-CX-Si或-Si-O-（CH2）n-O-Si-的化合物。 本文提供的低介电常数膜包括在膜的后处理之前和之后包括Si-CX-Si键的膜。 低介电常数膜具有良好的机械和粘附性能以及期望的介电常数。

    Techniques promoting adhesion of porous low K film to underlying barrier layer
    58.
    发明授权
    Techniques promoting adhesion of porous low K film to underlying barrier layer 有权
    促进多孔低K膜粘附到底层阻挡层的技术

    公开(公告)号：US07547643B2

    公开(公告)日：2009-06-16

    申请号：US11046090

    申请日：2005-01-28

    Applicant: Francimar Schmitt ,  Alexandros T. Demos ,  Derek R. Witty ,  Hichem M'Sadd ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Khaled A. Elsheref ,  Zhenjiang Cui

    Inventor： Francimar Schmitt ,  Alexandros T. Demos ,  Derek R. Witty ,  Hichem M'Sadd ,  Sang H. Ahn ,  Lester A. D'Cruz ,  Khaled A. Elsheref ,  Zhenjiang Cui

    IPC: H01L21/31 ,  H01L21/469

    CPC classification number: H01L21/31633 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76832 ,  H01L2221/1047

    Abstract: Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition. In still another approach, parameters of ebeam treatment such as dosage, energy, or the use of thermal annealing, may be controlled to remove carbon species at the interface between the barrier and the low K film. In a further approach, a pre-treatment plasma may be introduced prior to low k deposition to enhance heating of the barrier interface, such that a thin oxide interface is formed when low K deposition gases are introduced and the low K film is deposited.

    Abstract translation: 通过与上覆的多孔低K膜形成碳含量较低的中间层和富含氧化硅的多孔低K膜与下面的阻挡层的粘附性得到改善。 可以利用单独或组合的多种技术之一形成该粘合层。 在一种方法中，粘合层可以通过引入富氧化气体如O 2 / CO 2等形成。 以在沉积低K材料之前立即氧化Si前体。 在另一种方法中，在低K膜沉积之前，除去热不稳定化学品如α-萜品烯，伞花烃和任何其它不含氧的有机物。 在另一种方法中，可以修改硬件或处理参数，例如引入非硅含量组分的方式，以使得能够在低K膜沉积之前形成氧化物界面。 在另一种方法中，可以控制ebeam处理的参数，例如剂量，能量或使用热退火，以去除阻挡层和低K膜之间的界面处的碳物质。 在另一种方法中，可以在低k沉积之前引入预处理等离子体以增强阻挡界面的加热，使得当引入低K沉积气体并沉积低K膜时，形成薄氧化物界面。

    NOVEL SILICON PRECURSORS TO MAKE ULTRA LOW-K FILMS OF K<2.2 WITH HIGH MECHANICAL PROPERTIES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
    59.
    发明申请
    NOVEL SILICON PRECURSORS TO MAKE ULTRA LOW-K FILMS OF K<2.2 WITH HIGH MECHANICAL PROPERTIES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION 有权
    通过等离子体增强化学蒸气沉积法制备具有高机械性能的K <2.2的超低K膜的新型硅前驱体

    公开(公告)号：US20090017639A1

    公开(公告)日：2009-01-15

    申请号：US11777185

    申请日：2007-07-12

    Applicant: Kang Sub Yim ,  Alexandros T. Demos

    Inventor： Kang Sub Yim ,  Alexandros T. Demos

    IPC: H01L21/31

    CPC classification number: C23C16/401 ,  C23C16/56

    Abstract: A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—CX—Si or —Si—O—(CH2)n—O—Si—. Low dielectric constant films provided herein include films that include Si—CX—Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.

    Abstract translation: 提供了一种在基片上沉积低介电常数膜的方法。 低介电常数膜通过包括使一种或多种有机硅化合物和致孔剂反应的方法沉积，然后对膜进行后处理以在膜中产生孔。 一种或多种有机硅化合物包括具有通式结构Si-CX-Si或-Si-O-（CH2）n-O-Si-的化合物。 本文提供的低介电常数膜包括在膜的后处理之前和之后包括Si-CX-Si键的膜。 低介电常数膜具有良好的机械和粘附性能以及期望的介电常数。

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