Device having interdigital capacitor
    51.
    发明申请
    Device having interdigital capacitor 失效
    器件具有叉指电容

    公开(公告)号:US20030183864A1

    公开(公告)日:2003-10-02

    申请号:US10396461

    申请日:2003-03-26

    发明人: Naoyuki Miyazawa

    IPC分类号: H01L029/00 H01L027/108

    CPC分类号: H01L27/0805

    摘要: A device includes a transistor, and two interdigital capacitors. The transistor is located on an imaginary extension line aligned with a common electrode of the two interdigital capacitors.

    摘要翻译: 器件包括晶体管和两个交指电容器。 晶体管位于与两个指数间电容器的公共电极对准的虚拟延伸线上。

    Optical device and method of manufacturing the same
    52.
    发明申请
    Optical device and method of manufacturing the same 有权
    光学装置及其制造方法

    公开(公告)号:US20030053761A1

    公开(公告)日:2003-03-20

    申请号:US10244757

    申请日:2002-09-17

    IPC分类号: G02B006/36

    CPC分类号: G02B6/3835 G02B6/3887

    摘要: An optical device includes a rigid pipe provided to cover the outer peripheries of a fixing joint portion and an optical fiber. The tip portion of the rigid pipe has a gap for providing flexibility between the optical fiber and the tip portion. Therefore, the rigid pipe suppresses bending of the optical fiber to avoid concentration of stress in the fixing joint portion for fixing the optical fiber to an optical unit section, thereby avoiding breakage of the optical fiber in the fixing joint portion.

    摘要翻译: 光学装置包括设置成覆盖固定接合部分和光纤的外周的刚性管。 刚性管的尖端部分具有用于在光纤和尖端部分之间提供柔性的间隙。 因此,刚性管抑制光纤的弯曲,以避免在用于将光纤固定到光学单元部分的固定接合部分中的应力集中,从而避免光纤在固定接合部分中的断裂。

    Semiconductor amplifier circuit
    54.
    发明申请
    Semiconductor amplifier circuit 有权
    半导体放大电路

    公开(公告)号:US20030001678A1

    公开(公告)日:2003-01-02

    申请号:US10175497

    申请日:2002-06-20

    发明人: Shigemi Miyazawa

    IPC分类号: H03F003/08

    CPC分类号: H03F1/306 H03F3/082

    摘要: A semiconductor amplifier circuit comprises a transimpedance amplifier for amplifying an input signal; a by-pass transistor connected between an input terminal of the transimpedance amplifier and the ground potential; a first resistor, one end of the first resistor being connected to an output terminal of the transimpedance amplifier; a capacitor connected between the other end of the first resistor and the ground potential; a second resistor connected between the other end of the first resistor and the gate of the by-pass transistor via an inverter; and a differential amplifier having a signal input terminal connected to the output terminal of the transimpedance amplifier and a reference-voltage input terminal connected to the other end of the first resistor.

    摘要翻译: 半导体放大器电路包括用于放大输入信号的跨阻放大器; 连接在跨阻放大器的输入端和地电位之间的旁路晶体管; 第一电阻器,第一电阻器的一端连接到跨阻放大器的输出端子; 连接在第一电阻器的另一端和地电位之间的电容器; 连接在所述第一电阻器的另一端和旁通晶体管的栅极之间的第二电阻器,经由反相器; 以及差分放大器,其具有连接到跨阻放大器的输出端子的信号输入端子和连接到第一电阻器的另一端的基准电压输入端子。

    Device for and method of testing semiconductor laser module
    55.
    发明申请
    Device for and method of testing semiconductor laser module 失效
    半导体激光器模块的测试方法和测试方法

    公开(公告)号:US20020172243A1

    公开(公告)日:2002-11-21

    申请号:US10143945

    申请日:2002-05-14

    IPC分类号: H01S003/13 H01S003/04

    摘要: In the semiconductor laser module testing device, a temperature control power source changes a temperature of a wavelength locker module, and a wavelength monitoring bias circuit detects an output of a wavelength monitor in the changed temperature range and computes a correlation between a temperature of a semiconductor laser and a wavelength of light output therefrom. Moreover, the wavelength of the output light is locked by controlling the temperature of the wavelength locker module while feeding back the output of the wavelength monitor by a wavelength feedback circuit based on the obtained correlation between the temperature and the wavelength.

    摘要翻译: 在半导体激光器模块测试装置中,温度控制电源改变波长锁定器模块的温度,并且波长监视偏置电路在改变的温度范围内检测波长监视器的输出,并且计算半导体的温度之间的相关性 激光和从其输出的光的波长。 此外,通过基于获得的温度和波长之间的相关性,通过波长反馈电路反馈波长监视器的输出来控制波长锁定模块的温度来锁定输出光的波长。

    SEMICONDUCTOR INTEGRATED CIRCUIT HAVING THREE-DIMENSIONAL INTERCONNECTION LINES
    56.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT HAVING THREE-DIMENSIONAL INTERCONNECTION LINES 失效
    具有三维互连线的半导体集成电路

    公开(公告)号:US20020140088A1

    公开(公告)日:2002-10-03

    申请号:US10084921

    申请日:2002-03-01

    IPC分类号: H01L023/34

    摘要: A semiconductor integrated circuit has a 3-dimmensional interconnection line structure for high-speed operation. One aspect of the present invention, there is provided a monolithic microwave integrated circuit (MMIC) having a 3-dimmensional tournament tree shaped multilayer interconnection lines, wherein a single electric feeding point on a top surface of the MMIC is divided, layer by layer, into plural electrodes on the semiconductor substrate of the MMIC via a plurality of laminated interconnection layers and vertical interconnection layers therebetween shaped like a tournament tree.

    摘要翻译: 半导体集成电路具有用于高速操作的3维互连线结构。 本发明的一个方面提供了一种具有三维比赛树形多层互连线的单片微波集成电路(MMIC),其中,MMIC的顶表面上的单个馈电点逐层分割, 通过多个层压互连层和其间形成像锦标赛树的垂直互连层,在MMIC的半导体衬底上形成多个电极。

    Semiconductor device and method for fabricating the same
    57.
    发明申请
    Semiconductor device and method for fabricating the same 失效
    半导体装置及其制造方法

    公开(公告)号:US20020140007A1

    公开(公告)日:2002-10-03

    申请号:US10100061

    申请日:2002-03-19

    发明人: Kazuyuki Sakamoto

    摘要: A protective pattern is formed on a semiconductor substrate in a shape covering a circuit region and exposing an air bridge connecting portion, a metallic film and an insulating film are formed to cover the protective pattern, the metallic film and the insulating film are patterned to form air bridge wiring and an air bridge protective film covering the air bridge wiring, and thereafter, the protective pattern is removed to form a hollow between the air bridge wiring and the circuit region.

    摘要翻译: 在覆盖电路区域的形状的半导体基板上形成保护图案,露出气桥连接部,形成金属膜和绝缘膜以覆盖保护图案,将金属膜和绝缘膜图案化以形成 空气桥接线和覆盖空气桥接线的空气桥保护膜,然后去除保护图案,以在空气桥接线和电路区域之间形成中空。

    High frequency semiconductor device
    58.
    发明申请
    High frequency semiconductor device 失效
    高频半导体器件

    公开(公告)号:US20020139993A1

    公开(公告)日:2002-10-03

    申请号:US10090614

    申请日:2002-03-06

    摘要: In a high frequency semiconductor device, a shield plate which is connected to the ground potential is provided above an MMIC structure including line conductors, with an insulating interlayer provided therebetween. By using the shield plate to shield the MMIC, interference caused by external electromagnetic waves or leakage of electromagnetic waves to the exterior can be reduced in a chip alone.

    摘要翻译: 在高频半导体器件中,连接到地电势的屏蔽板设置在包括线导体的MMIC结构之上,其间设置有绝缘夹层。 通过使用屏蔽板来屏蔽MMIC,可以仅在芯片中减少由外部电磁波引起的干扰或电磁波泄漏到外部的干扰。

    Semiconductor photodetection device
    60.
    发明申请
    Semiconductor photodetection device 有权
    半导体光电检测装置

    公开(公告)号:US20020113282A1

    公开(公告)日:2002-08-22

    申请号:US10015681

    申请日:2001-12-17

    IPC分类号: H01L031/0232

    摘要: A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to the first side, a contact electrode surrounding the dielectric reflecting layer and contacting with the semiconductor structure, and a close contact electrode covering the dielectric reflecting layer and contacting with the contact electrode and the dielectric reflecting layer, wherein the close contact electrode adheres to the dielectric reflecting layer more strongly than to the contact electrode.

    摘要翻译: 半导体光检测装置包括:半导体结构,其包括在第一侧上具有光入射面的光吸收层,形成在与第一侧相反的半导体结构的第二侧上的电介质反射层,围绕电介质的接触电极 反射层并与半导体结构接触,以及覆盖电介质反射层并与接触电极和电介质反射层接触的紧密接触电极,其中紧密接触电极比接触电极更牢固地粘附于电介质反射层。