Mutant microorganism producing succinic acid simultaneously using sucrose and glycerol, and method for preparing succinic acid using same
    52.
    发明授权
    Mutant microorganism producing succinic acid simultaneously using sucrose and glycerol, and method for preparing succinic acid using same 有权
    使用蔗糖和甘油同时生产琥珀酸的突变体微生物,以及使用其制备琥珀酸的方法

    公开(公告)号:US08691516B2

    公开(公告)日:2014-04-08

    申请号:US13819339

    申请日:2011-08-30

    CPC classification number: C12P7/46 C12N1/20 C12N15/52 C12R1/01

    Abstract: The present invention relates to a succinic acid-producing mutant microorganism that is able to utilize sucrose and glycerol simultaneously as carbon sources. More particularly, the present invention relates to a succinic acid-producing mutant microorganism that is able to utilize sucrose and glycerol simultaneously for succinic acid production, the mutant organism being obtained by relieving the mechanism of sucrose-mediated catabolite repression of glycerol in a succinic acid-producing microorganism. As described above, when the succinic acid-producing mutant microorganism is cultured, it utilizes sucrose and glycerol simultaneously so that succinic acid can be produced with high productivity in a maximum yield approaching the theoretical yield while the production of byproducts is minimized. In addition, according to the present invention, various reduced chemicals which have been produced in low yields in conventional methods can be more effectively produced.

    Abstract translation: 本发明涉及能够同时使用蔗糖和甘油作为碳源的产琥珀酸突变体微生物。 更具体地,本发明涉及能够同时使用蔗糖和甘油进行琥珀酸生产的产琥珀酸的突变体微生物,其通过减轻甘油在琥珀酸中的蔗糖介导的分解代谢物抑制的机制而获得 生产微生物。 如上所述,当培养产琥珀酸的突变体微生物时,它同时使用蔗糖和甘油,使得以最大产率接近理论产率的高生产率生产琥珀酸,同时副产物的产生最小化。 此外,根据本发明,可以更有效地制造在常规方法中以低收率生产的各种还原化学品。

    Nitride-based semiconductor light emitting device with light extraction layer formed within
    56.
    发明授权
    Nitride-based semiconductor light emitting device with light extraction layer formed within 有权
    基于氮化物的半导体发光器件,其内部形成有光提取层

    公开(公告)号:US07888694B2

    公开(公告)日:2011-02-15

    申请号:US11525096

    申请日:2006-09-22

    CPC classification number: H01L33/22 H01L33/10 H01L33/32 H01L2933/0083

    Abstract: A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

    Abstract translation: 具有提高光提取效率的改进结构的氮化物系半导体发光器件及其制造方法。 氮化物系半导体发光元件包括依次层叠在基板上的n包覆层,有源层和p覆盖层,其中n包覆层包括第一覆盖层,第二覆盖层 以及插入在第一覆盖层和第二覆盖层之间并由多个纳米柱的阵列构成的光提取层,在有源层中产生的光提取层衍射或/和散射光。

    Semiconductor light emitting device and method of manufacturing the same
    57.
    发明授权
    Semiconductor light emitting device and method of manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US07719013B2

    公开(公告)日:2010-05-18

    申请号:US11289292

    申请日:2005-11-30

    Applicant: Jeong-wook Lee

    Inventor: Jeong-wook Lee

    Abstract: A semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a substrate, at least two light emitting cells located on the substrate and formed by stacking semiconductor material layers, a reflection layer and a transparent insulating layer sequentially stacked between the light emitting cells, and a transparent electrode covering the upper surface of the light emitting cells.

    Abstract translation: 提供半导体发光器件和制造半导体发光器件的方法。 半导体发光器件包括:基板,位于基板上的至少两个发光单元,其通过层叠半导体材料层,反射层和依次层叠在发光单元之间的透明绝缘层形成,以及覆盖上部的透明电极 发光单元的表面。

    Nitride-based semiconductor light-emitting device and method of manufacturing the same
    58.
    发明授权
    Nitride-based semiconductor light-emitting device and method of manufacturing the same 有权
    氮化物系半导体发光元件及其制造方法

    公开(公告)号:US07541206B2

    公开(公告)日:2009-06-02

    申请号:US11649237

    申请日:2007-01-04

    Abstract: A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.

    Abstract translation: 提供一种具有改善结构以提高光提取效率的氮化物基半导体发光器件及其制造方法。 该方法包括在衬底上依次形成n包覆层,有源层和p覆盖层的操作; 在所述p覆盖层的上表面上形成多个掩模点; 在所述掩模点之间的所述p覆盖层的部分上形成具有粗糙表面的p接触层; 通过干蚀刻从p接触层的上表面的一部分形成与p接触层的粗糙形状相同的粗糙形状的n包覆层的粗糙的n接触表面到期望的深度 n覆层; 在粗糙的n接触面上形成n电极; 以及在p-接触层上形成p电极。

    Semiconductor light emitting diode having textured structure and method of manufacturing the same
    59.
    发明授权
    Semiconductor light emitting diode having textured structure and method of manufacturing the same 失效
    具有纹理结构的半导体发光二极管及其制造方法

    公开(公告)号:US07521329B2

    公开(公告)日:2009-04-21

    申请号:US11320811

    申请日:2005-12-30

    Abstract: A semiconductor light emitting diode having a textured structure and a method of manufacturing the semiconductor light emitting diode are provided. The method includes forming a first semiconductor layer on a substrate; forming a textured structured first semiconductor layer by penetrating a material of a material layer into the first semiconductor layer after the material layer is formed on the first semiconductor layer and is annealed; and forming a second semiconductor layer on the first semiconductor layer.

    Abstract translation: 提供具有纹理结构的半导体发光二极管和制造半导体发光二极管的方法。 该方法包括在基板上形成第一半导体层; 在所述第一半导体层上形成所述材料层并退火之后,通过将材料层的材料穿入所述第一半导体层而形成纹理化结构化的第一半导体层; 以及在所述第一半导体层上形成第二半导体层。

    Gene encoding malic enzyme and method for preparing succinic acid using the same
    60.
    发明授权
    Gene encoding malic enzyme and method for preparing succinic acid using the same 有权
    基因编码苹果酸酶及使用其制备琥珀酸的方法

    公开(公告)号:US07470770B2

    公开(公告)日:2008-12-30

    申请号:US11229368

    申请日:2005-09-16

    CPC classification number: C12N9/0006 C12P7/46

    Abstract: A nucleotide sequence encoding a malic enzyme and a method for preparing succinic acid using the same, more particularly, a maeB nucleotide sequence encoding a malic enzyme B having the activity of converting pyruvic acid or pyruvate to malic acid or malate, or vice versa, a recombinant vector containing the gene, a microorganism transformed with the recombinant vector, and a method for preparing succinic acid using the transformed microorganism.

    Abstract translation: 编码苹果酸的核苷酸序列和使用该琥珀酸的琥珀酸的制备方法,特别是编码具有将丙酮酸或丙酮酸转化成苹果酸或苹果酸的活性的苹果酸B的maeB核苷酸序列,反之亦然, 含有该基因的重组载体,用重组载体转化的微生物,以及使用转化的微生物制备琥珀酸的方法。

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