SYSTEMS AND PROCESSES FOR PLASMA TUNING
    52.
    发明申请

    公开(公告)号:US20200090907A1

    公开(公告)日:2020-03-19

    申请号:US16134200

    申请日:2018-09-18

    Abstract: Systems and methods may be used to enact plasma tuning. Exemplary semiconductor processing chambers may include a pedestal positioned within the chamber and configured to support a substrate. The pedestal may include an electrode operable to form a plasma within a processing region of the semiconductor processing chamber, with the processing region at least partially defined by the pedestal. The pedestal may include a heater embedded within the pedestal, and the heater may be coupled with a power supply. An RF filter may be coupled between the power supply and the heater. A shunt capacitor may also be coupled between the RF filter and the heater.

    Flow control features of CVD chambers

    公开(公告)号:US10550472B2

    公开(公告)日:2020-02-04

    申请号:US14481774

    申请日:2014-09-09

    Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

    Rotatable substrate support having radio frequency applicator

    公开(公告)号:US10460915B2

    公开(公告)日:2019-10-29

    申请号:US15582282

    申请日:2017-04-28

    Abstract: A substrate support assembly includes a shaft assembly, a pedestal coupled to a portion of the shaft assembly, and a first rotary connector coupled to the shaft assembly, wherein the first rotary connector comprises a first coil member surrounding a rotatable shaft member that is electrically coupled to the shaft assembly, the first coil member being rotatable with the rotatable shaft, and a second coil member surrounding the first coil member, the second coil member being stationary relative to the first coil member, wherein the first coil member electrically couples with the second coil member when the rotating radio frequency applicator is energized and provides a radio frequency signal/power to the pedestal through the shaft assembly.

    PLASMA HEALTH DETERMINATION IN SEMICONDUCTOR SUBSTRATE PROCESSING REACTORS

    公开(公告)号:US20180366378A1

    公开(公告)日:2018-12-20

    申请号:US15625454

    申请日:2017-06-16

    Abstract: Methods of monitoring a plasma while processing a semiconductor substrate are described. In embodiments, the methods include determining the difference in power between the power delivered from the plasma power supply and the power received by the plasma in a substrate processing chamber. The power received may be determined using a V/I sensor positioned after the matching circuit. The power reflected or the power lost is the difference between the delivered power and the received power. The process may be terminated by removing the delivered power if the reflected power is above a setpoint. The VRF may further be fourier transformed into frequency space and compared to the stored fourier transform of a healthy plasma process. Missing frequencies from the VRF fourier transform may independently or further indicate an out-of-tune plasma process and the process may be terminated.

    ALKALI METAL AND ALKALI EARTH METAL REDUCTION

    公开(公告)号:US20180025900A1

    公开(公告)日:2018-01-25

    申请号:US15217651

    申请日:2016-07-22

    Abstract: Methods of removing contamination from the surface of a substrate are described. The etch selectively removes alkali metals and alkali earth metals from substrates. The alkali metals may include sodium, lithium, rubidium or potassium and the alkali earth metals may include calcium. For example, the etch may remove contaminants by generating and then desorbing volatile chemical species from the substrate. A hydrogen-and-oxygen-containing precursor or combination of precursors is flowed into a remote plasma to form plasma effluents. The plasma effluents are then flowed into the substrate processing region to react with the substrate and remove an alkali metal and/or an alkali earth metal from the surface of the substrate. No local plasma excites the plasma effluents in embodiments.

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