公开(公告)号：US07420222B2

公开(公告)日：2008-09-02

申请号：US11842350

申请日：2007-08-21

申请人： David B. Slater, Jr. ,  Robert C. Glass ,  Charles M. Swoboda ,  Bernd Keller ,  James Ibbetson ,  Brian Thibeault ,  Eric J. Tarsa

发明人： David B. Slater, Jr. ,  Robert C. Glass ,  Charles M. Swoboda ,  Bernd Keller ,  James Ibbetson ,  Brian Thibeault ,  Eric J. Tarsa

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/10 ,  H01L33/405 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32014 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

摘要： Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. A reflector is provided between the mounting support and the diode region, that is configured to reflect light that is emitted from the diode region back into the diode region, through the substrate that is transparent to optical radiation in the predetermined wavelength range and from the plurality of pedestals, upon application of voltage across the diode region. A layer of Indium Tin Oxide (ITO) is provided between the reflector and the diode region.

摘要翻译： 发光二极管包括具有第一和第二相对面并且对于预定波长范围内的光辐射透明的衬底，其被图案化以在横截面中限定多个基座，其从第一面朝向 第二张脸。 第二面上的二极管区域被配置为在施加二极管区域上的电压时将预定波长范围内的光发射到衬底中。 配置在与衬底相对的二极管区域上的安装支撑件被配置为支撑二极管区域，使得从二极管区域发射到衬底中的光在施加二极管区域上的电压时从第一面发射。 在安装支撑件和二极管区域之间设置反射器，其被配置为将从二极管区域发射的光反射回二极管区域，穿过对于预定波长范围内的光辐射透明的基板和从多个 在二极管区域施加电压时， 在反射器和二极管区域之间设置一层氧化铟锡（ITO）。

公开(公告)号：US20080142817A1

公开(公告)日：2008-06-19

申请号：US12027313

申请日：2008-02-07

申请人： James Ibbetson ,  Bernd Keller ,  Primit Parikh

发明人： James Ibbetson ,  Bernd Keller ,  Primit Parikh

IPC分类号： H01L33/00 ,  H01L21/02

CPC分类号： H01L33/62 ,  H01L33/0079 ,  H01L33/483 ,  H01L33/486 ,  H01L33/60 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A packaged light emitting device includes a carrier substrate having a top surface and a bottom surface, first and second conductive vias extending from the top surface of the substrate to the bottom surface of the substrate, and a bond pad on the top surface of the substrate in electrical contact with the first conductive via. A diode having first and second electrodes is mounted on the bond pad with the first electrode is in electrical contact with the bond pad. A passivation layer is formed on the diode, exposing the second electrode of the diode. A conductive trace is formed on the top surface of the carrier substrate in electrical contact with the second conductive via and the second electrode. The conductive trace is on and extends across the passivation layer to contact the second electrode.Methods of packaging light emitting devices include providing an epiwafer including a growth substrate and an epitaxial structure on the growth substrate, bonding a carrier substrate to the epitaxial structure of the epiwafer, forming a plurality of conductive vias through the carrier substrate, defining a plurality of isolated diodes in the epitaxial structure, and electrically connecting at least one conductive via to respective ones of the plurality of isolated diodes.

摘要翻译： 封装的发光器件包括具有顶表面和底表面的载体衬底，从衬底的顶表面延伸到衬底的底表面的第一和第二导电通孔以及衬底的顶表面上的接合焊盘 与第一导电通孔电接触。 具有第一和第二电极的二极管安装在接合焊盘上，第一电极与接合焊盘电接触。 在二极管上形成钝化层，使二极管的第二电极露出。 导电迹线形成在载体基板的顶表面上，与第二导电通孔和第二电极电接触。 导电迹线在钝化层上并且延伸穿过第二电极。 封装发光器件的方法包括在生长衬底上提供包括生长衬底和外延结构的外延膜，将载体衬底结合到外延膜的外延结构，形成通过载体衬底的多个导电通孔，限定多个 隔离二极管，并且将至少一个导电通孔电连接到多个隔离二极管中的相应二极管。

公开(公告)号：US20080007953A1

公开(公告)日：2008-01-10

申请号：US11149999

申请日：2005-06-10

申请人： Bernd Keller ,  James Ibbetson

发明人： Bernd Keller ,  James Ibbetson

IPC分类号： F21V29/00

CPC分类号： H01L33/641 ,  H01L33/60 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2924/00

摘要： A high power semiconductor component structure having a semiconductor device arranged to operate in response to an electrical signal, with the device heating up during operation in response to the electrical signal. A heat sink is positioned in thermal contact with the semiconductor device such that heat from the device transmits into the first heat sink. The heat sink has at least partially a porous material region of a thermally conductive material in a 3-dimensional pore structure with the surfaces of the pore structure providing surface area for heat to dissipate into the ambient air.

摘要翻译： 一种具有半导体器件的高功率半导体器件结构，该半导体器件被布置成响应于电信号而工作，该器件响应于该电信号在操作期间加热。 散热器定位成与半导体器件热接触，使得来自器件的热量传输到第一散热器。 散热器至少部分地具有三维孔结构中的导热材料的多孔材料区域，孔结构的表面提供用于热量散发到周围空气中的表面积。

公开(公告)号：US09666772B2

公开(公告)日：2017-05-30

申请号：US10836743

申请日：2004-04-29

申请人： James Ibbetson ,  Jayesh Bharathan ,  Bernd Keller

发明人： James Ibbetson ,  Jayesh Bharathan ,  Bernd Keller

IPC分类号： H01L33/54 ,  H01L33/60 ,  H01L33/64 ,  H01L33/56 ,  H01L33/58

CPC分类号： H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitter includes a planar supporting surface, a light source positioned on the spreader region, and an encapsulant positioned on the spreader region to surround the light source. Except where constrained by adhesion to the planar supporting surface, the encapsulant is capable of expanding and contracting in response to a change in temperature so that forces caused by differences in the coefficient of thermal expansion between the different components is minimized. One or more reflective elements can be positioned proximate to the light source to increase the light emitting efficiency of the light emitter. The reflective elements can include a reflective layer on the spreader region and/or a reflective layer on a portion of the encapsulant.

公开(公告)号：US09012937B2

公开(公告)日：2015-04-21

申请号：US11974431

申请日：2007-10-10

申请人： Bernd Keller ,  James Ibbetson

发明人： Bernd Keller ,  James Ibbetson

IPC分类号： H01L33/00 ,  C09K11/77 ,  H01L33/50

CPC分类号： C09K11/7734 ,  H01L33/504 ,  H01L2924/0002 ,  H01L2924/00

摘要： An emitter package comprising a light emitting diode (LED) emitting light at a wavelength within a wavelength range and a plurality of phosphors. Each of the phosphors absorbs at least some light from the LED and re-emits a different wavelength of light. The package emits a combination of light from the LED and the plurality of phosphors, with the phosphors having excitation characteristics such that the emitter package emits light within a standard deviation of a target color for LEDs emitting at the wavelengths with the wavelength range. A method for fabricating emitter packages comprising fabricating a plurality of LEDs, each of which emits at a wavelength within a range of wavelengths. Each of the LEDs are arranged in a respective package with a plurality of conversion materials so that at least some light from each of the LEDs is absorbed and re-emitted by its corresponding conversion materials. The plurality of conversion materials have excitation characteristics that compensate for different LED emission wavelengths within the LED range of wavelengths such that each of the LED packages emits light within a standard deviation from a target color.

公开(公告)号：US08680556B2

公开(公告)日：2014-03-25

申请号：US13415626

申请日：2012-03-08

申请人： James Ibbetson ,  Ting Li ,  Bernd Keller

发明人： James Ibbetson ,  Ting Li ,  Bernd Keller

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/46 ,  G02B19/0028 ,  G02B19/0061 ,  H01L33/48 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014

摘要： A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED or package to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises a LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. One embodiment of a LED package comprises a LED mounted on a substrate with an encapsulant over said LED and a composite high reflectivity layer arranged to reflect emitted light. The composite layer comprises a plurality of layers such that at least one of said plurality of layers has an index of refraction lower than the encapsulant and a reflective layer on a side of said plurality of layers opposite the LED. In some embodiments, conductive vias are included through the composite layer to allow an electrical signal to pass through the layer to the LED.

摘要翻译： 一种具有与所述LED或封装集成的复合高反射率层的高效率发光二极管，以提高发射效率。 发光二极管（LED）芯片的一个实施例包括LED和与LED成一体的复合高反射率层以反射从有源区域发射的光。 LED封装的一个实施例包括安装在具有在所述LED上的密封剂的衬底上的LED和布置成反射发射光的复合高反射率层。 复合层包括多个层，使得所述多个层中的至少一个层具有低于密封剂的折射率和在与LED相对的所述多个层的一侧上的反射层。 在一些实施例中，通过复合层包括导电通孔，以允许电信号通过该层到达LED。

公开(公告)号：US08558252B2

公开(公告)日：2013-10-15

申请号：US13219486

申请日：2011-08-26

申请人： James Ibbetson ,  Bernd Keller ,  Ronan Letoquin ,  Matthew Donofrio ,  Michael Bergmann

发明人： James Ibbetson ,  Bernd Keller ,  Ronan Letoquin ,  Matthew Donofrio ,  Michael Bergmann

IPC分类号： H01L29/18 ,  H01L29/205 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L33/504 ,  H01L33/0095 ,  H01L2933/0041

摘要： Methods for fabricating semiconductor devices such as LED chips with emission wavelength correction and devices fabricated using these methods. Different embodiments include sequential coating methods that provide two or more coatings or layers of conversion material over LEDs, which can be done at the wafer level. The methods are particularly applicable to fabricating LED chips that emit a warm white light, which typically requires covering LEDs with one or more wavelength conversion materials such as phosphors. In one embodiment, a base wavelength conversion material is applied to the semiconductor devices. A portion of the base conversion material is removed. At least two different tuning wavelength conversion materials are also applied to the semiconductor devices, either before or after the application of the base conversion material.

摘要翻译： 用于制造具有发射波长校正的LED芯片的半导体器件的方法以及使用这些方法制造的器件。 不同的实施方案包括在LED上提供两个或更多个转化材料的涂层或多层的顺序涂覆方法，其可以在晶片级完成。 该方法特别适用于制造发出暖白光的LED芯片，其通常需要用一种或多种波长转换材料如磷光体覆盖LED。 在一个实施例中，将基础波长转换材料施加到半导体器件。 一部分碱转换材料被去除。 在应用基底转换材料之前或之后，至少两种不同的调谐波长转换材料也被应用于半导体器件。

公开(公告)号：US06972438B2

公开(公告)日：2005-12-06

申请号：US10676953

申请日：2003-09-30

申请人： Ting Li ,  James Ibbetson ,  Bernd Keller

发明人： Ting Li ,  James Ibbetson ,  Bernd Keller

IPC分类号： H01L21/3063 ,  H01L31/0236 ,  H01L33/16 ,  H01L33/20 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L21/3063 ,  H01L31/0236 ,  H01L33/16 ,  H01L2224/16245 ,  H01L2924/10158

摘要： A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.

摘要翻译： 一种在半导体材料的表面上形成多孔层的方法和装置，其中提供电解质并与半导体材料层的一个或多个表面接触。 电解质被加热并且跨越所述电解质和半导体材料引入偏压，导致电流在电解质和半导体材料之间流动。 电流在与电解质接触的半导体材料的一个或多个表面上形成多孔层。 具有多孔层的半导体材料可以用作发光体的基板。 可以在衬底上形成半导体发射区域。 发射区域能够响应于偏压而全向发光，多孔层增强了通过衬底的发射区域光的提取。

公开(公告)号：US09412926B2

公开(公告)日：2016-08-09

申请号：US11149999

申请日：2005-06-10

申请人： Bernd Keller ,  James Ibbetson

发明人： Bernd Keller ,  James Ibbetson

IPC分类号： H01L33/64 ,  H01L33/60

CPC分类号： H01L33/641 ,  H01L33/60 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2924/00

摘要： A high power semiconductor component structure having a semiconductor device arranged to operate in response to an electrical signal, with the device heating up during operation in response to the electrical signal. A heat sink is positioned in thermal contact with the semiconductor device such that heat from the device transmits into the first heat sink. The heat sink has at least partially a porous material region of a thermally conductive material in a 3-dimensional pore structure with the surfaces of the pore structure providing surface area for heat to dissipate into the ambient air.

摘要翻译： 一种具有半导体器件的高功率半导体器件结构，该半导体器件被布置成响应于电信号而工作，该器件响应于该电信号在操作期间加热。 散热器定位成与半导体器件热接触，使得来自器件的热量传输到第一散热器。 散热器至少部分地具有三维孔结构中的导热材料的多孔材料区域，孔结构的表面提供用于热量散发到周围空气中的表面积。

公开(公告)号：US08847257B2

公开(公告)日：2014-09-30

申请号：US13372765

申请日：2012-02-14

申请人： Bernd Keller ,  James Ibbetson ,  Peter Andrews ,  Gerald H. Negley ,  Norbert Hiller

发明人： Bernd Keller ,  James Ibbetson ,  Peter Andrews ,  Gerald H. Negley ,  Norbert Hiller

IPC分类号： H01L33/00 ,  H01L25/16 ,  H01L33/50

CPC分类号： H01L33/507 ,  H01L25/167 ,  H01L2224/48091 ,  H01L2924/10253 ,  H01L2924/00014 ,  H01L2924/00

摘要： A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member and methods for forming the same are also provided.

摘要翻译： 半导体发光器件的基座包括其中具有腔室的半导体衬底，其配置为接收发光器件。 第一接合焊盘定位在空腔中以耦合到容纳在空腔中的发光器件的第一节点。 第二接合焊盘定位在空腔中以耦合到定位在其中的发光器件的第二节点。 还提供了包括固体波长转换元件的发光器件及其形成方法。