摘要:
A system for detecting an initialization flag signal and distinguishing it from a normal flag signal having half the duration of the initialization flag signal. The initialization flag detection system may be included in the command buffer of a packetized DRAM that is used in a computer system. In one embodiment, the initialization flag detection system includes a pair of shift registers receiving the flag signal at their respective data inputs. One of the shift registers is clocked by a signal corresponding to an externally applied to command clock signal, while the other shift register is clocked by a quadrature clock signal. Together, the shift registers store a number of samples taken over a duration that is longer than the duration of the normal flag signal. The outputs of the shift registers are applied to a logic circuit, such as a NAND gate, that generates an initialization signal when all of the samples stored in the shift registers correspond to the logic levels of the flag signal. In another embodiment, the initialization flag detection system includes a plurality of latches receiving the flag signals at their data inputs. The latches are clocked by respective strobe signals corresponding to the command clock signal, but having phases that differ from each other. The outputs of the latches are applied to a logic circuit, such as a NAND) gate. Finally, in another embodiment of the invention, the bits of the command packet are sampled along with the flag signal and compared to the samples of the flag signal to detect when a command packet having a predetermined pattern does not correspond to a flag signal having a predetermined pattern.
摘要:
A multi-bank memory includes memory cells arranged in individually selectable banks that share column select signals. The memory cells are addressed by a row decoder that activates word lines to couple data onto digit lines. The digit lines are coupled to input/output lines through first and second series-connected switches. The first switches are input/output switches that are controlled by column select signals that are shared between multiple banks. The second switches are bank select switches that are controlled by a bank decoder, for coupling only one of the banks to input/output lines and isolating the other banks from input/output lines. The invention reduces timing requirements between operations in different banks, and allows concurrent operations in different banks, thereby increasing the speed at which the memory operates.
摘要:
A method and system for generating a reference voltage for memory device signal receivers operates in either a calibration mode or a normal operating mode. In the calibration mode, the magnitude of the reference voltage is incrementally varied, and a digital signal pattern is coupled to the receiver at each reference voltage. An output of the receiver is analyzed to determine if the receiver can accurately pass the signal pattern at each reference voltage level. A range of reference voltages that allow the receiver to accurately pass the signal pattern is recorded, and a final reference voltage is calculated at the approximate midpoint of the range. This final reference voltage is applied to the receiver during normal operation.
摘要:
A memory device is operable in either a high mode or a low speed mode. In either mode, 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.
摘要:
A memory device is operable in either a high mode or a low speed mode. In either mode 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.
摘要:
A SLDRAM System is provided with a plurality of in-circuit, calibratable memory modules and a memory controller for issuing unicast and multicast command packets to the memory modules. Command packets are transmitted over a unidirectional command link that includes a complementary pair of command clock lines, a command FLAG line and a plurality of noncomplemented command bit lines. Each of the command clock lines, command bit lines and the FLAG line is a SLIO transmission line. Data transfer operations are carried out in response to the command packets over one or more bidirectional data links that each includes two complementary pairs of data clock lines, and a plurality of noncomplemented data bit lines. Each of the data clock lines and the data bit lines is a SLIO transmission line. Each SLIO transmission line is single-end terminated and preferably tapped into by way of stub resistors.
摘要:
The present invention is directed to a system, a module, and an apparatus and method for forming a microelectronic memory device. In one embodiment, a system includes a processor and a controller coupled to the processor with at least one memory module coupled to the controller, the module including a pair of memory devices oppositely positioned on respective surfaces of a substrate and interconnected by members extending through the substrate that couple terminals of the devices, the terminals being selected to include a group of terminals that are configured to communicate functionally compatible signals.
摘要:
The present invention is directed to a system, a module, and an apparatus and method for forming a microelectronic memory device. In one embodiment, a system includes a processor and a controller coupled to the processor with at least one memory module coupled to the controller, the module including a pair of memory devices oppositely positioned on respective surfaces of a substrate and interconnected by members extending through the substrate that couple terminals of the devices, the terminals being selected to include a group of terminals that are configured to communicate functionally compatible signals.
摘要:
A data capture circuit for an integrated circuit is disclosed which includes providing respective data paths between a latch and clock terminal and a latch and an associated data terminal, the length of each of the paths for a given latch device being approximately equal.
摘要:
The present invention is directed to a system, a module, and an apparatus and method for forming a microelectronic memory device. In one embodiment, a system includes a processor and a controller coupled to the processor with at least one memory module coupled to the controller, the module including a pair of memory devices oppositely positioned on respective surfaces of a substrate and interconnected by members extending through the substrate that couple terminals of the devices, the terminals being selected to include a group of terminals that are configured to communicate functionally compatible signals.