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51.发明申请Method for lowering deposition stress, improving ductility, and enhancing lateral growth in electrodeposited iron-containing alloys 审中-公开降低沉积应力，改善延展性和增强电沉积含铁合金的横向生长的方法公开(公告)号：US20060222871A1
公开(公告)日：2006-10-05
申请号：US11097538
申请日：2005-03-31
申请人： Christian Bonhote , John Lam , Lubomyr Romankiw , Xiaoyan Shao
发明人： Christian Bonhote , John Lam , Lubomyr Romankiw , Xiaoyan Shao
CPC分类号： C25D5/18 , C25D3/562 , Y10T428/31678
摘要： The present invention provides an electrodeposition/plating method for metal films and alloys in a bath which contain ferric ions and which usually deposit with high stress, but which when electrodeposited under pulse plating conditions in the presence of low valence vanadium or other ions capable of existing in multiple valence states produce low stress films and alloys and furthermore when plated through a mask creep laterally through walls and creep laterally along the surface of the mask to permit formation of overhangers, bridges, heat exchangers, and other complex three dimensional micro structures of low stress.
摘要翻译： 本发明提供了一种用于金属膜和合金的电沉积/电镀方法，其中含有铁离子并且通常以高应力沉积的金属膜和合金，但是当在低价钒或其它能够存在的其它离子的存在下在脉冲电镀条件下电沉积时 在多价态下产生低应力膜和合金，此外当通过掩模电镀通过壁横向穿过壁并沿着掩模的表面横向蠕变以允许形成悬臂，桥，热交换器以及其它复杂的三维微结构 强调。
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52.发明授权公开(公告)号：US08941240B2
公开(公告)日：2015-01-27
申请号：US13564414
申请日：2012-08-01
申请人： Hariklia Deligianni , Xiaoyan Shao
发明人： Hariklia Deligianni , Xiaoyan Shao
IPC分类号： H01L23/48 , H01L23/532 , C25D3/50 , C25D5/50 , H01L21/288 , H01L21/768
CPC分类号： H01L23/53242 , C25D3/50 , C25D5/50 , H01L21/2885 , H01L21/76877 , H01L2924/0002 , H01L2924/3011 , Y10T428/12007 , H01L2924/00
摘要： A contact rhodium structure is fabricated by a process that comprises obtaining a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein into which the contact rhodium is to be deposited; depositing a seed layer in the cavities and on the dielectric layer; and depositing the rhodium by electroplating from a bath comprising a rhodium salt; an acid and a stress reducer; and then optionally annealing the structure.
摘要翻译： 通过包括获得其上具有电介质层的衬底的方法制造接触铑结构，其中介电层具有其中将沉积接触铑的空腔; 将种子层沉积在空腔中和介电层上; 并通过电镀从含铑盐的浴中沉积铑; 酸和减压剂; 然后可选地退火该结构。
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53.发明授权Forming an electrode having reduced corrosion and water decomposition on surface using an organic protective layer 失效使用有机保护层形成表面上具有降低的腐蚀和水分解的电极公开(公告)号：US08354336B2
公开(公告)日：2013-01-15
申请号：US12820543
申请日：2010-06-22
申请人： Ali Afzali-Ardakani , Shafaat Ahmed , Hariklia Deligianni , Dario L. Goldfarb , Stefan Harrer , Binquan Luan , Glenn J. Martyna , Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Xiaoyan Shao , Gustavo A. Stolovitzky
发明人： Ali Afzali-Ardakani , Shafaat Ahmed , Hariklia Deligianni , Dario L. Goldfarb , Stefan Harrer , Binquan Luan , Glenn J. Martyna , Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Xiaoyan Shao , Gustavo A. Stolovitzky
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： B82Y10/00 , H01L21/76834 , H01L29/0665 , H01L51/0093 , H01L51/0504 , H01L51/102
摘要： Accordingly, the present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A substrate which has a conductive layer disposed thereon is provided and the conductive layer has an oxide layer with an exposed surface. The exposed surface of the oxide layer contacts a solution of an organic surface active compound in an organic solvent to form a protective layer of the organic surface active compound over the oxide layer. The protective layer has a thickness of from about 0.5 nm to about 5 nm and ranges therebetween depending on a chemical structure of the surface active compound.
摘要翻译： 因此，本发明提供一种在其表面上形成具有降低的腐蚀和水分解的电极的方法。 提供了具有设置在其上的导电层的衬底，并且导电层具有具有暴露表面的氧化物层。 氧化物层的暴露表面接触有机表面活性化合物在有机溶剂中的溶液，以在氧化物层上形成有机表面活性化合物的保护层。 根据表面活性化合物的化学结构，保护层的厚度为约0.5nm至约5nm，并且其范围。
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公开(公告)号：US08273591B2
公开(公告)日：2012-09-25
申请号：US12054886
申请日：2008-03-25
IPC分类号： H01L21/00
CPC分类号： H01L31/18 , B82Y10/00 , B82Y30/00 , C30B29/02 , C30B29/06 , C30B29/40 , C30B29/52 , C30B29/60 , C30B29/605 , C30B33/10 , H01L21/30604 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L31/0352 , H01L33/20
摘要： Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
摘要翻译： 在没有模板的情况下通过从两种或更多种半导体材料的层状结构中去除材料来制造分段半导体纳米线。 去除在层状结构的表面上的某些位置处发生，并且优选地沿着结晶轴的方向延伸，使得具有分段结构的纳米线保持在很少或不发生去除的位置。 不同片段之间的界面可以垂直于纳米线的纵向方向或与之相垂直。
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55.发明申请REDUCING CORROSION AND WATER DECOMPOSITION ON A SURFACE OF A TITANIUM NITRIDE ELECTRODE 审中-公开降低硝酸钛电极表面的腐蚀和水分解公开(公告)号：US20110308969A1
公开(公告)日：2011-12-22
申请号：US12820574
申请日：2010-06-22
申请人： Ali Afzali-Azdakani , Shafaat Ahmed , Hariklia Deligianni , Stefan Harrer , Binquan Luan , Glenn J. Martyna , Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Xiaoyan Shao , Gustavo A. Stolovitzky
发明人： Ali Afzali-Azdakani , Shafaat Ahmed , Hariklia Deligianni , Stefan Harrer , Binquan Luan , Glenn J. Martyna , Hongbo Peng , Stanislav Polonsky , Stephen Rossnagel , Xiaoyan Shao , Gustavo A. Stolovitzky
IPC分类号： G01N17/04
CPC分类号： G01N17/04
摘要： The present invention provides a method of reducing corrosion and water decomposition on a surface of an electrode having a titanium nitride conductive layer disposed on a substrate and estimating extent of reduction thereof. The electrode is immersed into a solution containing a hydroxyl-functional compound. Thereafter, a voltage is applied to the titanium nitride conductive layer of the electrode. The extent of oxidation of the titanium nitride conductive layer is correlated with the extent of formation of oxide of titanium nitride and/or the extent of oxidation of the titanium nitride conductive layer is correlated with the increase of surface roughness. The extent of water decomposition is correlated with formation of hydrogen and oxygen bubbles.
摘要翻译： 本发明提供了在具有设置在基板上的具有氮化钛导电层的电极的表面上减少腐蚀和水分解的方法，并且估计其还原程度。 将电极浸入含有羟基官能化合物的溶液中。 然后，向电极的氮化钛导电层施加电压。 氮化钛导电层的氧化程度与氮化钛的氧化物的形成程度和/或氮化钛导电层的氧化程度与表面粗糙度的增加有关。 水分解的程度与氢气和氧气泡的形成有关。
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56.发明授权公开(公告)号：US07918984B2
公开(公告)日：2011-04-05
申请号：US11856335
申请日：2007-09-17
IPC分类号： C25D5/02
CPC分类号： C25D7/12 , C25D3/54 , C25D5/022 , C25D5/18 , C25D17/001 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1608 , H01L45/1683
摘要： A method of electrodepositing germanium compound materials on an exposed region of a substrate structure, which includes forming a plating solution by dissolving at least one germanium salt and at least one salt containing an element other than germanium in water; obtaining a substrate with a clean surface; immersing the substrate in the solution; and electroplating germanium compound materials on the substrate by applying an electrical potential between the substrate and an anode in the plating solution, in which the substrate is included in a semiconductor or phase change device.
摘要翻译： 一种将锗化合物材料电沉积在基材结构的暴露区域上的方法，其包括通过将至少一种锗盐和至少一种含锗以外的元素的盐溶解在水中形成电镀溶液; 获得具有干净表面的基材; 将基材浸入溶液中; 以及通过在所述基板和所述基板被包括在半导体或相变装置中的所述电镀液中的所述基板和阳极之间施加电位而在所述基板上电镀锗化合物材料。
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公开(公告)号：US20110037042A1
公开(公告)日：2011-02-17
申请号：US12541595
申请日：2009-08-14
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1683 , H01L45/1691
摘要： A method for fabricating a phase change memory device including memory cells includes patterning a via to a contact surface of a substrate corresponding to each of an array of conductive contacts to be connected to access circuitry, lining each via with a conformal conductive seed layer to the contact surface, forming a dielectric layer covering the conductive seed layer, and etching a center region of each via to the contact surface to expose the conformal conductive seed layer at the contact surface. The method further includes electroplating phase change material on exposed portions of the conformal conductive seed layer, recessing the phase change material within the center region forming a conductive material that remains conductive upon oxidation, on the recessed phase change material, oxidizing edges of the conformal conductive seed layer formed along sides of each via, and forming a top electrode over each memory cell.
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公开(公告)号：US20100037933A1
公开(公告)日：2010-02-18
申请号：US12189839
申请日：2008-08-12
IPC分类号： H01L31/052 , H01L31/048 , H01L31/18
CPC分类号： H01L31/0504 , H01L31/0201 , H01L31/022433 , H01L31/0475 , H01L31/048 , H01L31/049 , H01L31/0508 , Y02E10/50
摘要： A solar cell panel and method of forming a solar cell panel. The method includes a: forming an electrically conductive bus bar on a top surface of a bottom cover plate; forming an electrically conductive contact frame proximate to a bottom surface of a top cover plate, the top cover plate transparent to visible light; and placing an array of rows and columns of solar cell chips between the bottom cover plate and the top cover plate, each solar cell chip of the array of solar cell chips comprising an anode adjacent to a top surface and a cathode adjacent to a bottom surface of the solar cell chip, the bus bar electrically contacting each anode of each solar cell chip of the array of solar cell chips and the contact frame contacting each anode of each solar cell chip of the array of solar cell chips.
摘要翻译： 太阳能电池板及其制造方法。 该方法包括：在底盖板的顶表面上形成导电母线; 形成靠近顶盖板的底表面的导电接触框架，顶盖板对可见光透明; 并且将太阳能电池芯片的行和列阵列放置在底盖板和顶盖板之间，太阳能电池芯片阵列的每个太阳能电池芯片包括与顶表面相邻的阳极和与底表面相邻的阴极 所述母线与所述太阳能电池芯片阵列的每个太阳能电池芯片的每个阳极电接触，并且所述接触框架接触所述太阳能电池芯片阵列的每个太阳能电池芯片的每个阳极。
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公开(公告)号：US20090242869A1
公开(公告)日：2009-10-01
申请号：US12054886
申请日：2008-03-25
CPC分类号： H01L31/18 , B82Y10/00 , B82Y30/00 , C30B29/02 , C30B29/06 , C30B29/40 , C30B29/52 , C30B29/60 , C30B29/605 , C30B33/10 , H01L21/30604 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L31/0352 , H01L33/20
摘要： Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
摘要翻译： 在没有模板的情况下通过从两种或更多种半导体材料的层状结构中去除材料来制造分段半导体纳米线。 去除在层状结构的表面上的某些位置处发生，并且优选地沿着结晶轴的方向延伸，使得具有分段结构的纳米线保持在很少或不发生去除的位置。 不同片段之间的界面可以垂直于纳米线的纵向方向或与之相垂直。
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60.发明申请METHOD OF MAKING PHASE CHANGE MATERIALS ELECTROCHEMICAL ATOMIC LAYER DEPOSITION 审中-公开制备相变材料的方法电化学原子层沉积公开(公告)号：US20090011577A1
公开(公告)日：2009-01-08
申请号：US11774105
申请日：2007-07-06
IPC分类号： H01L21/20
CPC分类号： C25D3/54 , C25D5/10 , C25D5/18 , C25D7/12 , H01L45/06 , H01L45/144 , H01L45/148 , H01L45/1608
摘要： A method of making phase change materials on a substrate by electrochemical atomic layer deposition, which includes sequentially electrodepositing at least one atomic layer of a first element of a first solution and at least one atomic layer of a second element of a second solution on a substrate; and repeating the sequential electrodepositing until at least one film of a phase change material is formed on the substrate.
摘要翻译： 一种通过电化学原子层沉积在基底上制备相变材料的方法，其包括将至少一个原子层的第一溶液的第一元素和第二溶液的第二元素的至少一个原子层顺次电沉积在基底上 ; 并重复连续的电沉积，直到在基底上形成至少一相变材料膜。
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