公开(公告)号：US4999485A

公开(公告)日：1991-03-12

申请号：US533999

申请日：1990-06-04

申请人： Federico Capasso ,  Stephen E. Ralph

发明人： Federico Capasso ,  Stephen E. Ralph

IPC分类号： G02F1/017 ,  G02F1/355

CPC分类号： B82Y20/00 ,  G02F1/01716 ,  G02F1/3556 ,  G02F2001/0175

摘要： A nonlinear optical device structure is formed by a compound semiconductor having a graded chemical composition such that the average drift velocity of electrons is in the same direction as, but of greater magnitude than, that of holes. In this way, when a pump optical beam (control beam) is flashed (as by a picosecond pulse) upon the structure, electron-hole pairs are created with a resulting temporary spatial separation between the holes and the electron--whereby an electric dipole moment is temporarily induced in the structure. In turn, this dipole moment temporarily modifies either the birefringence or absorption property, or both, with respect to a controlled beam--whereby the polarization, phase, or intensity, of the controlled beam can be modified by the control beam. After the electrons and holes drift to positions which extinguish the dipole the structure is ready for a repeat performance.

摘要翻译： 非线性光学器件结构由具有分级化学成分的化合物半导体形成，使得电子的平均漂移速度与孔的方向相同但大于其值。 以这种方式，当泵结构的光束（控制光束）通过皮秒脉冲闪光时，电子 - 空穴对产生空穴和电子之间的临时空间分隔，由此电偶极矩 在结构中暂时诱导。 反过来，这个偶极矩相对于被控制的光束临时修改双折射或吸收特性或二者，由此受控束的偏振，相位或强度可以被控制光束修改。 在电子和空穴漂移到熄灭偶极子的位置之后，该结构准备好重复执行。

公开(公告)号：US4794440A

公开(公告)日：1988-12-27

申请号：US142316

申请日：1987-12-30

申请人： Federico Capasso ,  Arthur C. Gossard ,  John R. Hayes ,  Roger J. Malik ,  Pierre M. Petroff

发明人： Federico Capasso ,  Arthur C. Gossard ,  John R. Hayes ,  Roger J. Malik ,  Pierre M. Petroff

IPC分类号： H01L29/737 ,  H01L29/72

CPC分类号： H01L29/7371

摘要： A heterojunction bipolar transistor having means for changing carrier transport properties is described.

摘要翻译： 描述了具有用于改变载流子传输特性的装置的异质结双极晶体管。

公开(公告)号：US4719496A

公开(公告)日：1988-01-12

申请号：US631041

申请日：1986-02-12

申请人： Federico Capasso ,  James A. Cooper, Jr. ,  Karvel K. Thornber

发明人： Federico Capasso ,  James A. Cooper, Jr. ,  Karvel K. Thornber

IPC分类号： H01L29/10 ,  H01L29/15 ,  H01L29/36 ,  H01L29/861 ,  H01L45/00 ,  H01L29/205

CPC分类号： H01L29/157 ,  H01L29/1029 ,  H01L29/155 ,  H01L29/365 ,  H01L29/8618

摘要： Semiconductor structures suitable for repeated velocity overshoot are described. The structure comprises at least two velocity overshoot sections with each section comprising a first semiconductor region having a rapid change in potential and a dimension such that the carrier transit time is comparable to or shorter than the mean scattering time and a second semiconductor region having a more gradual change in potential and a dimension such that the carrier transit time is sufficient to allow the energy relaxation time to be exceeded.

摘要翻译： 描述适用于重复速度超调的半导体结构。 该结构包括至少两个速度过冲部分，每个部分包括具有快速变化的电位的第一半导体区域和使得载流子渡越时间与平均散射时间相当或更短的尺寸，以及具有更多的第二半导体区域 电势的逐渐变化和使得载流子传播时间足以允许超过能量松弛时间的尺寸。

公开(公告)号：US4704622A

公开(公告)日：1987-11-03

申请号：US803108

申请日：1985-11-27

申请人： Federico Capasso ,  Sergey Luryi

发明人： Federico Capasso ,  Sergey Luryi

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/12 ,  H01L29/15 ,  H01L29/20 ,  H01L29/205 ,  H01L29/68 ,  H01L29/772 ,  H01L29/775 ,  H01L29/80 ,  H01L27/12 ,  H01L29/161

CPC分类号： B82Y10/00 ,  H01L29/1029 ,  H01L29/151 ,  H01L29/205 ,  H01L29/772 ,  H01L29/775

摘要： A resonant tunneling device having a one-dimensional quantum well comprises a semiconductor region capable of exhibiting one-dimensional quantization. The device comprises source and drain contact regions adjoining such semiconductor region as well as a gate contact for applying a field to such region; the device can be implemented, e.g., by methods of III-V deposition and etching technology. Under suitable source-drain bias conditions the device can function as a transistor having negative transconductance.

摘要翻译： 具有一维量子阱的谐振隧穿装置包括能够呈现一维量化的半导体区域。 该器件包括与这种半导体区域相邻的源极和漏极接触区域以及用于将场施加到这样的区域的栅极接触; 该装置可以例如通过III-V沉积和蚀刻技术的方法来实现。 在合适的源极 - 漏极偏置条件下，该器件可用作具有负跨导的晶体管。

公开(公告)号：US20130266034A1

公开(公告)日：2013-10-10

申请号：US13696734

申请日：2011-05-06

申请人： Nanfang Yu ,  Federico Capasso

发明人： Nanfang Yu ,  Federico Capasso

IPC分类号： H01S3/063

CPC分类号： H01S3/063 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0267 ,  H01S5/0287 ,  H01S5/1046 ,  H01S5/12 ,  H01S5/3402 ,  H01S2301/18 ,  H01S2302/02

摘要： laser devices described may emit a beam of electromagnetic radiation having a large wavelength (e.g., mid-infrared, far-infrared) and exhibiting a low angle of divergence. In some embodiments, the wavelength of the electromagnetic radiation is between 3 microns and 500 microns and the divergence angel is less than 15 degrees. Electromagnetic waves may be produced from a single monolithic laser device which includes a laser waveguide (e.g., quantum cascade laser waveguide) and a collimating element having at least one indented region (e.g., a plurality of periodically disposed grooved structures). A portion of the electromagnetic radiation may propagate as surface waves (e.g., surface plasmons) along the surface of the collimating element where indented regions in the collimating element may decrease the propagation velocity of the surface waves. A portion of the electromagnetic radiation may also be substantially convinced within a grooved structure of the collimating element (e.g., as channel polaritons).

摘要翻译： 所描述的激光器件可以发射具有大波长（例如，中红外，远红外）并且呈现低发散角的电磁辐射束。 在一些实施例中，电磁辐射的波长在3微米至500微米之间，发散角小于15度。 电磁波可以由包括激光波导（例如，量子级联激光波导）和具有至少一个凹陷区域（例如，多个周期性设置的带槽结构）的准直元件的单个单片激光装置产生。 电磁辐射的一部分可以沿着准直元件的表面作为表面波（例如，表面等离子体激元）传播，其中准直元件中的凹陷区域可能降低表面波的传播速度。 电磁辐射的一部分也可以在准直元件的沟槽结构内（例如，作为通道极化子）基本相信。

公开(公告)号：US08328396B2

公开(公告)日：2012-12-11

申请号：US12738180

申请日：2008-11-19

申请人： Federico Capasso ,  Nanfang Yu ,  Jonathan Fan

发明人： Federico Capasso ,  Nanfang Yu ,  Jonathan Fan

IPC分类号： F21V33/00

CPC分类号： H01S5/1082 ,  B82Y20/00 ,  G02B5/008 ,  H01S5/005 ,  H01S5/1046 ,  H01S2301/14 ,  H01S2301/18

摘要： An apparatus for collimating radiation can include an aperture of subwavelength dimensions and a neighboring set of grooves defined on a metal film integrated with an active or passive device that emits radiation. Integration of the beam collimator onto the facet of a laser or other radiation-emitting device provides for beam collimation and polarization selection. Beam divergence can be reduced by more than one order of magnitude compared with the output of a conventional laser. An active beam collimator with an aperture-groove structure can be integrated with a wide range of optical devices, such as semiconductor lasers (e.g., quantum cascade lasers), light emitting diodes, optical fibers, and fiber lasers.

摘要翻译： 用于准直辐射的装置可以包括亚波长尺寸的孔径和限定在与发射辐射的有源或无源器件集成的金属膜上的相邻的一组沟槽。 将光束准直仪集成到激光器或其他辐射发射器件的小面上提供光束准直和偏振选择。 与常规激光器的输出相比，光束发散度可以减少超过一个数量级。 具有孔径凹槽结构的有源光束准直器可以与诸如半导体激光器（例如，量子级联激光器），发光二极管，光纤和光纤激光器等宽范围的光学器件集成。

公开(公告)号：US20060146893A1

公开(公告)日：2006-07-06

申请号：US11027398

申请日：2004-12-30

申请人： Alexey Belyanin ,  Federico Capasso ,  Mariano Troccoli

发明人： Alexey Belyanin ,  Federico Capasso ,  Mariano Troccoli

IPC分类号： H01S3/10

CPC分类号： H01S5/04 ,  H01S3/30

摘要： Embodiments of a laser are disclosed.

摘要翻译： 公开了一种激光器的实施例。

公开(公告)号：US06816530B2

公开(公告)日：2004-11-09

申请号：US10261423

申请日：2002-09-30

申请人： Federico Capasso ,  Alfred Yi Cho ,  Raffaele Colombelli ,  Claire F Gmachl ,  Nina Owschimikow ,  Deborah Lee Sivco

发明人： Federico Capasso ,  Alfred Yi Cho ,  Raffaele Colombelli ,  Claire F Gmachl ,  Nina Owschimikow ,  Deborah Lee Sivco

IPC分类号： H01S310

CPC分类号： B82Y20/00 ,  G02F1/39 ,  H01S3/1083 ,  H01S3/109 ,  H01S5/0604 ,  H01S5/0605 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3402 ,  H01S5/3425

摘要： A monolithic apparatus has a laser optical cavity. The laser optical cavity has a multi-layer structure that includes a first active semiconductor multi-layer and a second semiconductor multi-layer. The second semiconductor multi-layer is located laterally adjacent to the first active semiconductor multi-layer. The first active semiconductor multi-layer includes a sequence of quantum well structures that produce light of a lasing frequency in response to being electrically pumped. The second semiconductor multi-layer includes a sequence of quantum well structures and is configured to both absorb light of the lasing frequency and produce one of parametric light and harmonic light in response to absorbing light of the lasing frequency.

摘要翻译： 单片设备具有激光光腔。 激光光腔具有包括第一有源半导体多层和第二半导体多层的多层结构。 第二半导体多层位于与第一有源半导体多层横向相邻的位置。 第一有源半导体多层包括量子阱结构序列，其响应于被电泵浦产生激光频率的光。 第二半导体多层包括一系列量子阱结构，并且被配置为既吸收激光频率的光并且响应于吸收激光频率的光而产生参量光和谐波光之一。

公开(公告)号：US06795467B2

公开(公告)日：2004-09-21

申请号：US09826237

申请日：2001-04-04

申请人： Federico Capasso ,  Alfred Yi Cho ,  Raffaele Colombelli ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alessandro Tredicucci

发明人： Federico Capasso ,  Alfred Yi Cho ,  Raffaele Colombelli ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alessandro Tredicucci

IPC分类号： H01S319

CPC分类号： B82Y20/00 ,  H01S5/0014 ,  H01S5/0264 ,  H01S5/0683 ,  H01S5/1078 ,  H01S5/3402

摘要： The measurement of intersubband electroluminescence (ISB-EL) in unipolar quantum cascade lasers is achieved by forming a longitudinal cleave through the active region and waveguide of the QC laser device, exposing a complete side face of the device, including the active region. The conventional laser facets at the entrance and exit of the active region are coated with a highly reflective material and the emission from the exposed side face is measured. In theory, the sideface emission would comprise only the ISB-EL spontaneous emission, but some additional laser emission (due to scattering in the imperfect waveguide structure) also exits along this sideface. Spatial filtering and/or polarization monitoring can be used to differentiate the laser emission from the ISB-EL spontaneous emission.

摘要翻译： 在单极量子级联激光器中的子带间电致发光（ISB-EL）的测量通过形成纵向切割通过QC激光器件的有源区和波导来实现，暴露了包括有源区的器件的完整侧面。 在有源区域的入口和出口处的常规激光刻面涂覆有高反射材料，并且测量来自暴露侧面的发射。 在理论上，侧面发射将仅包括ISB-EL自发发射，但是一些额外的激光发射（由于在不完美的波导结构中的散射）也沿该侧面退出。 空间滤波和/或偏振监测可用于区分激光发射与ISB-EL自发发射。

公开(公告)号：US06556604B1

公开(公告)日：2003-04-29

申请号：US09708223

申请日：2000-11-08

申请人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alessandro Tredicucci ,  Michael Clement Wanke

发明人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alessandro Tredicucci ,  Michael Clement Wanke

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/3402 ,  H01S5/3407

摘要： The RT regions of an ISB light emitter comprise pre-biased SLs and a multiplicity of split quantum wells (SPQWs). A SPQW is a quantum well that is divided into a multiplicity of sub-wells by a first barrier layer sufficiently thin that the upper and lower energy states are split beyond their natural broadening and contribute to different minibands in each RT region. In contrast, adjacent SPQWs are coupled to one another by second barrier layers. The thicknesses of the latter layers are chosen so that minibands are created across each RT region. In one embodiment, the emitter includes an I/R region between adjacent RT regions, and in another embodiment the I/R regions are omitted.

摘要翻译： ISB光发射器的RT区域包括预偏置SL和多个分裂量子阱（SPQW）。 SPQW是通过第一势垒层被分成多个子阱的量子阱，其足够薄，使得上部和下部能量状态被分裂超出它们的自然扩宽并且有助于每个RT区域中的不同的微型物体。 相反，相邻的SPQW通过第二阻挡层相互耦合。 选择后一层的厚度，以便在每个RT区域上形成最小值。 在一个实施例中，发射器包括相邻RT区域之间的I / R区域，在另一实施例中，I / R区域被省略。