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公开(公告)号：US5019519A
公开(公告)日：1991-05-28
申请号：US316865
申请日：1989-02-28
IPC分类号： H01L21/265 , G02B6/134 , H01L21/306 , H01L21/324 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/20
CPC分类号： H01S5/0265 , G02B6/1347 , H01L21/30612 , H01L21/3245 , H01S5/20 , H01S5/2059 , H01S5/2063 , Y10S148/084
摘要： An optical semiconductor device manufacturing method is disclosed which involves an ion implantation step of implanting ions into a compound semiconductor wafer through an ion implantation mask and an annealing step of activating atoms in the compound semiconductor wafer through an annealing mask film. The ion implantation step and the annealing step are performed in succession after laminating mono- or multi-layered compound semiconductor layers as the ion implantation mask and the annealing mask film on the compound semiconductor wafer.
摘要翻译： 公开了一种光学半导体器件制造方法，其包括通过离子注入掩模将离子注入化合物半导体晶片的离子注入步骤和通过退火掩模膜激活化合物半导体晶片中的原子的退火步骤。 在将单层或多层化合物半导体层作为离子注入掩模和化合物半导体晶片上的退火掩模膜层叠之后，依次进行离子注入步骤和退火步骤。
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公开(公告)号：US4731641A
公开(公告)日：1988-03-15
申请号：US892479
申请日：1986-08-05
申请人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
发明人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
IPC分类号： H01L31/107 , H01L31/18 , H01L29/201 , H01L27/14 , H01L31/08
CPC分类号： H01L31/1075 , H01L31/18
摘要： An avalanche photodiode with a quantum well layer in which a thin film, periodic multilayer structure composed of two different semiconductors is formed in a carrier multiplying region, the effective ionization coefficient ratio of carriers is raised by a quantum well layer formed by the thin film, multilayer periodic structure, and only electrons of large ionization coefficient are injected into the multiplying region, thereby to reduce noise in the APD.
摘要翻译： 具有量子阱层的雪崩光电二极管，其中在载流子倍增区域中形成由两个不同半导体构成的薄膜周期性多层结构，载流子的有效电离系数比由薄膜形成的量子阱层提高， 多层周期性结构，只有电离系数较大的电子注入乘法区域，从而降低APD中的噪声。
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公开(公告)号：US4682196A
公开(公告)日：1987-07-21
申请号：US806746
申请日：1985-12-09
IPC分类号： H01L29/205 , H01L31/0352 , H01L31/11 , H01L27/14 , H01L29/12
CPC分类号： H01L29/205 , H01L31/035281 , H01L31/11 , Y02E10/50
摘要： A semiconductor device, which is formed by a sequential lamination of a first semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3, a second semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, a third semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and a thickness less than 300 .ANG., a fourth semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, and a fifth semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and, in which the first and fifth semiconductor layers are the same in conductivity type and the third semiconductor layer is different in conductivity type from the fifth semiconductor layer. In accordance with the present invention, the energy gap of the third semiconductor layer is larger than the energy gaps of the second and fourth semiconductor layers. An annular region of a semi-insulating material or of the same conductivity type as that of the third semiconductor layer may be formed around an active region to extend from the fifth semiconductor layer to the second semiconductor layer.
摘要翻译： 一种半导体器件，其通过顺次层叠具有载流子浓度大于1017cm -3的第一半导体层，载流子浓度小于1016cm-3的第二半导体层，具有载流子浓度的第三半导体层 大于1017cm-3，厚度小于300，载流子浓度小于1016cm-3的第四半导体层和载流子浓度大于1017cm-3的第五半导体层，其中第一 并且第五半导体层的导电类型相同，并且第三半导体层的导电类型与第五半导体层不同。 根据本发明，第三半导体层的能隙大于第二和第四半导体层的能隙。 可以在有源区周围形成半绝缘材料或与第三半导体层相同的导电类型的环形区域，以从第五半导体层延伸到第二半导体层。
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公开(公告)号：US4660934A
公开(公告)日：1987-04-28
申请号：US710984
申请日：1985-03-12
CPC分类号： G03F7/095 , G02B5/1857 , G03F7/001 , Y10S359/90
摘要： A method for manufacturing diffraction grating, in which after forming, on a substrate, one of a negative type photoresist film (an N film) and a positive type photoresist film (a P film) to cover a first region A and the other of the negative type photoresist film and the positive type photoresist film, or the latter film on the former one to cover a second region B, the first region and the second region are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film. Another feature of the present invention resides in that after forming, on a substrate, a structure in which a negative type photoresist film (an N film) is formed to cover only a first region A and the negative type photoresist film is formed on a positive type photoresist film (a P film) to cover a second region B, the first region and the second region of the substrate are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film.
摘要翻译： 制造衍射光栅的方法，其中在基板上形成负型光致抗蚀剂膜（N膜）和正型光致抗蚀剂膜（P膜）之一以覆盖第一区域A和另一个 负型光致抗蚀剂膜和正型光致抗蚀剂膜，或者在前者的后者膜覆盖第二区域B，第一区域和第二区域受到双光束干涉曝光，从而形成衍射光栅，其中波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，在第一区域和第二区域中的相位彼此相反。 本发明的另一个特征在于，在基板上形成后，形成负型光致抗蚀剂膜（N膜）仅覆盖第一区域A并且负型光致抗蚀剂膜形成为阳性的结构 （P膜）覆盖第二区域B，对基板的第一区域和第二区域进行双光束干涉曝光，从而形成衍射光栅，其中第一区域和第二区域中的波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，彼此相反。
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公开(公告)号：US4573158A
公开(公告)日：1986-02-25
申请号：US699586
申请日：1985-02-08
申请人： Katsuyuki Utaka , Kazuo Sakai , Shigeyuki Akiba
发明人： Katsuyuki Utaka , Kazuo Sakai , Shigeyuki Akiba
IPC分类号： H01S5/00 , H01S5/06 , H01S5/0625 , H01S5/12 , H01S3/19
CPC分类号： H01S5/0625 , H01S5/0602 , H01S5/06255 , H01S5/12
摘要： A semiconductor laser of distributed feedback type, which is provided with a portion having periodic refractive index variations in the direction of light propagation in one of an active layer and a layer adjacent thereto and is caused to perform laser oscillation by injecting a current into the active layer portion. In accordance with the present invention, a current injection region having no periodic refractive index variations is formed on an extension of the portion having the periodic refractive index variations.
摘要翻译： 一种分布式反馈型半导体激光器，其具有在有源层和与其相邻的层之一上的光传播方向上具有周期性折射率变化的部分，并且通过向有源层注入电流而进行激光振荡 层部分。 根据本发明，在具有周期性折射率变化的部分的延伸部上形成不具有周期性折射率变化的电流注入区域。
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公开(公告)号：US4456998A
公开(公告)日：1984-06-26
申请号：US266610
申请日：1981-05-22
CPC分类号： H01S5/2231
摘要： A semiconductor laser, which comprises a substrate of InP, an active layer, and two clad layers holding therebetween the active layer, and which is constructed so that the refractive index of the active layer may be larger than the refractive indexes of the two clad layers. In one of the two clad layers, the refractive index of a region adjacent to a radiation region in the active layer is larger than the refractive index of a region adjacent to a non-radiation region in the active layer. The refractive index of the other clad layer is equal to the refractive index of that region of said on clad layer adjoining the radiation region or the non-radiation region. The thickness and width of the radiation region of the active layer are selected so that the semiconductor laser may oscillate in the fundamental transverse mode. A buffer layer may be further provided between the active layer and one of the two clad layers.
摘要翻译： 一种半导体激光器，其包括InP的衬底，有源层和保持在其间的有源层的两个覆盖层，并且被构造成使得有源层的折射率可以大于两个覆盖层的折射率 。 在两个包覆层中的一个中，与有源层中的辐射区相邻的区域的折射率大于与有源层中的非辐射区域相邻的区域的折射率。 另一个包覆层的折射率等于与辐射区域或非辐射区域相邻的所述上包层的区域的折射率。 选择有源层的辐射区域的厚度和宽度，使得半导体激光器可以在基本横向模式下振荡。 可以在活性层和两个包覆层中的一个之间进一步设置缓冲层。
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公开(公告)号：US5122844A
公开(公告)日：1992-06-16
申请号：US706542
申请日：1991-05-22
摘要： A quantum well structure is disclosed, which is comprised of a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confinement layers of an energy gap greater than that of the quantum well layer. A second material of a lattice constant different from that of a first material primarily for the quantum well layer is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer. A semiconductor device which employs such a quantum well structure and is so constructed as to utilize its physical phenomenon which is caused by the energy levels in the forbidden band. In concrete terms, the present invention has its feature in allowing ease in the fabrication of an intermediate infrared or blue light emitting device, for instance.
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公开(公告)号：US4932034A
公开(公告)日：1990-06-05
申请号：US414585
申请日：1989-09-27
IPC分类号： H01S5/00 , H01S5/042 , H01S5/0625 , H01S5/0683 , H01S5/12 , H01S5/16
CPC分类号： H01S5/164 , H01S5/0625 , H01S5/0683 , H01S5/06255 , H01S5/06258 , H01S5/06832 , H01S5/12 , H01S5/124
摘要： A distributed feedback semiconductor device is disclosed which has a diffraction grating disposed near a light emitting active layer, a double hetero structure with the active layer sandwiched between n- and p-type semiconductors and n- and p-side electrodes for injection a current into the active layer, one of the n- and p-side electrodes being divided into a plurality of electrodes, and in which a current is injected into the active layer across the n- and p-side electrodes for laser oscillation to obtain output light. A first current source is connected to each of electrodes into which one of the n- and p-side electrodes is divided, and a second current source is connected to the divided electrodes via resistors, for injecting a current into the active layer in a desired ratio. The first and second current sources are controlled in accordance with the light emitting state of the active layer. In operation, a current is injected into the active layer through the divided electrodes while controlling the injected-current density in the active layer to be uniform in the direction of travel of light until the injected current reaches a threshold current at which the distributed feedback semiconductor laser device starts to oscillate, and a current thereafter injected while controlling the injected-current density to be maximum in at least that region of the active layer in which the light intensity is maximum in the direction of travel of light.
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公开(公告)号：US4897845A
公开(公告)日：1990-01-30
申请号：US350088
申请日：1989-05-10
IPC分类号： G02F1/35 , H01L33/06 , H01L33/10 , H01L33/20 , H01L33/30 , H01L33/44 , H01L33/58 , H01S5/00 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/343 , H01S5/50
CPC分类号： B82Y20/00 , H01S5/2027 , H01S5/50 , H01S5/2203 , H01S5/34306 , H01S5/34313
摘要： A semiconductor optical amplifying element is disclosed which has a semiconductor multilayer structure including at least a first semiconductor layer for providing an optical gain in response to the injection of carriers thereinto, and a p-side electrode and an n-side electrode for the carrier injection. A first reflecting surface and a second reflecting surface are disposed thickwisely of the semiconductor multilayer structure and opposite to each other thereacross. The element is designed so that light incident thereon from the thickwise direction of the semiconductor multilayer structure is amplified by propagating through the element perpendicularly to the thickwise direction of the semiconductor multilayer structure while being multiple-reflected between the first reflecting surface and the second reflecting surface.
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公开(公告)号：US4815090A
公开(公告)日：1989-03-21
申请号：US164819
申请日：1988-03-07
CPC分类号： H01S5/0264 , H01S5/164 , H01S5/12
摘要： A distributed feedback semiconductor laser with monitor is disclosed, in which the energy gap of a light absorbing layer provided on the window region alone is smaller than the energy gap of the light emitting layer, and in which an independent pn junction isolated from the pn junction in the laser region is provided in or at one edge of the light absorbing layer on the window region.
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