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公开(公告)号：US4504764A
公开(公告)日：1985-03-12
申请号：US376146
申请日：1982-05-07
申请人： Yasuhiro Sakamoto , Koji Saita , Akihiro Kojima
发明人： Yasuhiro Sakamoto , Koji Saita , Akihiro Kojima
CPC分类号： H01J29/07 , H01J2229/0744 , H01J2229/0761
摘要： A cathode ray tube having a phosphor layer formed on an inner surface of a panel of an envelope, a color selecting aperture grill formed of a number of grid elements and located within the envelope opposing to the phosphor layer, a metal wire for coupling the number of the grid elements, an electron gun located within the envelope and a deflecting device located around the envelope is disclosed, in which the resonance frequency of at least one grid element of the color selecting grid is selected different from that of another grid element in the vicinity thereof.
摘要翻译： 一种阴极射线管，其具有形成在外壳的面板的内表面上的荧光体层，由若干格栅元件形成并位于与荧光体层相对的外壳内的选色孔格栅，用于将数字 的电子枪，位于外壳内的电子枪和位于封套周围的偏转装置，其中，选择栅格中至少一个栅格元件的谐振频率被选择为不同于另一栅格元件的谐振频率 附近。
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公开(公告)号：US08933480B2
公开(公告)日：2015-01-13
申请号：US12793945
申请日：2010-06-04
CPC分类号： H01L33/486 , H01L33/0079 , H01L33/385 , H01L33/54 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor stack, a first electrode, a second electrode, a first interconnect, an insulating film, and a second interconnect. The semiconductor stack includes a first major surface, a second major surface provided on a side opposite to the first major surface, a side face, and a light emitting layer. The first electrode is provided on the first major surface. The second electrode is provided at least on a peripheral portion of the second major surface. The first interconnect is provided on the first electrode. The insulating film is provided on the side face of the semiconductor stack. The second interconnect is provided on the side face of the semiconductor stack via the insulating film. The second interconnect is connected to the second electrode in outside of the peripheral portion of the second major surface of the semiconductor stack.
摘要翻译： 根据一个实施例，半导体发光器件包括半导体堆叠，第一电极，第二电极，第一互连，绝缘膜和第二互连。 半导体堆叠包括第一主表面，设置在与第一主表面相对的一侧的第二主表面，侧面和发光层。 第一电极设置在第一主表面上。 第二电极至少设置在第二主表面的周边部分上。 第一互连设置在第一电极上。 绝缘膜设置在半导体叠层的侧面上。 第二互连经由绝缘膜设置在半导体堆叠的侧面上。 第二互连在半导体堆叠的第二主表面的外围部分的外部连接到第二电极。
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公开(公告)号：US08872210B2
公开(公告)日：2014-10-28
申请号：US13598393
申请日：2012-08-29
IPC分类号： H01L33/40
CPC分类号： H01L33/504 , H01L24/97 , H01L33/46 , H01L33/501 , H01L33/52 , H01L33/60 , H01L33/62 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2933/0091 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting element, a phosphor layer, and a fluorescent reflection film. The phosphor layer has a transparent medium, a phosphor dispersed in the transparent medium, and a particle dispersed in the transparent medium. The phosphor is excited by the excitation light so as to emit a fluorescence. The particle is a magnitude of not more than 1/10 a wavelength of the excitation light. The particle has a different refractive index from a refractive index of the transparent medium. The fluorescent reflection film is provided between the light emitting element and the phosphor layer. The fluorescent reflection film has a higher reflectance with respect to a fluorescent wavelength of the phosphor, than a reflectance with respect to the wavelength of the excitation light.
摘要翻译： 根据一个实施例，半导体发光器件包括发光元件，荧光体层和荧光反射膜。 荧光体层具有透明介质，分散在透明介质中的荧光体和分散在透明介质中的粒子。 荧光体被激发光激发，从而发出荧光。 粒子的大小不大于激发光的波长的1/10。 该颗粒具有与透明介质的折射率不同的折射率。 荧光反射膜设置在发光元件和荧光体层之间。 荧光反射膜相对于荧光体的荧光波长具有比相对于激发光的波长的反射率更高的反射率。
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公开(公告)号：US08829359B2
公开(公告)日：2014-09-09
申请号：US13647845
申请日：2012-10-09
IPC分类号： H05K1/16
CPC分类号： B81B7/0038 , B81B2201/0221 , B81B2203/04 , B81C1/00476
摘要： A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.
摘要翻译： 衬底包括功能元件。 绝缘的第一膜形成空腔，其与基板一起存储功能元件，并且包括多个通孔。 绝缘的第二膜覆盖多个通孔，形成在第一膜上，并且具有比第一膜高的透气性。 在第二薄膜上形成绝缘的第三薄膜，其透气度低于第二薄膜。 绝缘的第四膜形成在第三膜上，并且具有大于第三膜的弹性。
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公开(公告)号：US08766310B2
公开(公告)日：2014-07-01
申请号：US12849098
申请日：2010-08-03
申请人： Akihiro Kojima
发明人： Akihiro Kojima
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/02 , H01L33/20 , H01L33/24 , H01L33/36 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/486 , H01L33/50 , H01L33/62 , H01L2224/16
摘要： According to one embodiment, a semiconductor light emitting device includes, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a first interconnection, and a second interconnection. The first semiconductor layer has a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion selectively provided on the second major surface, and a trench formed from the second major surface to the first major surface. The second semiconductor layer is stacked on the protrusion of the first semiconductor layer and includes a light emitting layer. The first electrode is provided on the second major surface of the first semiconductor layer and a side surface of the trench. The second electrode is provided on a surface of the second semiconductor layer on an opposite side to the first semiconductor layer.
摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，第一电极，第二电极，第一互连和第二互连。 第一半导体层具有第一主表面，设置在与第一主表面相反的一侧的第二主表面，选择性地设置在第二主表面上的突起以及从第二主表面到第一主表面形成的沟槽。 第二半导体层层叠在第一半导体层的突起上，并且包括发光层。 第一电极设置在第一半导体层的第二主表面和沟槽的侧表面上。 第二电极设置在第二半导体层的与第一半导体层相反的一侧的表面上。
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公开(公告)号：US08729592B2
公开(公告)日：2014-05-20
申请号：US12886092
申请日：2010-09-20
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L33/14
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on a side face of a portion of the semiconductor layer between the light emitting layer and the first major surface. The second interconnect layer is provided in the second opening and on the first insulating layer on the side opposite to the second major surface to connect to the second electrode provided on the side face. The second interconnect layer is provided on the side face of the portion of the semiconductor layer with interposing the second electrode.
摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，第一绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和 第二绝缘层。 第一电极设置在半导体层的第二主表面上。 第二电极设置在发光层和第一主表面之间的半导体层的一部分的侧面上。 第二互连层设置在与第二主表面相对的一侧的第二开口中和第一绝缘层上，以连接到设置在侧面上的第二电极。 第二互连层设置在半导体层的该部分的侧面上并插入第二电极。
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公开(公告)号：US20130248904A1
公开(公告)日：2013-09-26
申请号：US13601487
申请日：2012-08-31
IPC分类号： H01L33/50
CPC分类号： H01L33/647 , H01L25/0753 , H01L33/0095 , H01L33/20 , H01L33/385 , H01L33/502 , H01L33/505 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first face, a second face, a side face, and a light emitting layer; a p-side electrode provided on the second face; an n-side electrode provided on the side face; a first p-side metal layer provided on the p-side electrode; a first n-side metal layer provided on the periphery of the n-side electrode; a first insulating layer provided on a face on the second face side in the first n-side metal layer; a second p-side metal layer connected with the first p-side metal layer on the first p-side metal layer, and provided, extending from on the first p-side metal layer to on the first insulating layer; and a second n-side metal layer provided on a face on the second face side in the first n-side metal layer in a peripheral region of the semiconductor layer.
摘要翻译： 根据一个实施例，半导体发光器件包括：包括第一面，第二面，侧面和发光层的半导体层; 设置在所述第二面上的p侧电极; 设置在所述侧面上的n侧电极; 设置在p侧电极上的第一p侧金属层; 设置在n侧电极的周围的第一n侧金属层; 设置在第一n侧金属层的第二面侧的面上的第一绝缘层; 第二p侧金属层，与第一p侧金属层上的第一p侧金属层连接，并且从第一p侧金属层延伸到第一绝缘层; 以及设置在半导体层的周边区域中的第一n侧金属层的第二面侧的面上的第二n侧金属层。
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公开(公告)号：US08349415B2
公开(公告)日：2013-01-08
申请号：US13167310
申请日：2011-06-23
申请人： Akihiro Kojima , Fumio Shimano
发明人： Akihiro Kojima , Fumio Shimano
CPC分类号： C09K19/20 , C09K19/46 , C09K19/586 , C09K19/588 , C09K2019/0466 , C09K2019/183 , C09K2019/2035 , C09K2019/3438 , Y10T428/10
摘要： The present invention relates to a liquid-crystalline medium having high twist, to the use thereof for electro-optical purposes, and to displays containing this medium.
摘要翻译： 本发明涉及一种具有高扭曲，其电光目的用途的液晶介质，以及含有该介质的显示器。
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公开(公告)号：US08278676B2
公开(公告)日：2012-10-02
申请号：US12728837
申请日：2010-03-22
申请人： Akihiro Kojima , Yoshiaki Sugizaki
发明人： Akihiro Kojima , Yoshiaki Sugizaki
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/44 , H01L33/486 , H01L33/50 , H01L33/505 , H01L33/62 , H01L2224/16 , H01L2933/0016
摘要： A semiconductor light-emitting device includes: a first semiconductor layer having a first major surface and a second major surface which is an opposite side to the first major surface; a second semiconductor layer provided on the second major surface of the first semiconductor layer and including a light-emitting layer; a first electrode provided on the second major surface of the first semiconductor layer; a second electrode provided on a surface of the second semiconductor layer, the surface being an opposite side to the first semiconductor layer; an insulating film provided on a side surface of the second semiconductor layer, and an edge of an interface between the first semiconductor layer and the second semiconductor layer; and a metal film provided on the insulating film from the second electrode side toward the edge of the interface.
摘要翻译： 一种半导体发光器件包括：具有第一主表面的第一半导体层和与第一主表面相对的第二主表面; 第二半导体层，设置在第一半导体层的第二主表面上并且包括发光层; 设置在第一半导体层的第二主表面上的第一电极; 设置在所述第二半导体层的表面上的第二电极，所述表面是与所述第一半导体层相反的一侧; 设置在所述第二半导体层的侧表面上的绝缘膜，以及所述第一半导体层和所述第二半导体层之间的界面的边缘; 以及设置在所述绝缘膜上的从所述第二电极侧朝向所述界面的边缘的金属膜。
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公开(公告)号：US20120153344A1
公开(公告)日：2012-06-21
申请号：US13406840
申请日：2012-02-28
IPC分类号： H01L33/36
CPC分类号： H01L33/62 , H01L33/0008 , H01L33/0016 , H01L33/0095 , H01L33/36 , H01L33/387 , H01L33/56 , H01L2933/0016 , H01L2933/005 , H01L2933/0066 , Y10S438/94
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer; a p-side electrode provided on the second surface of the semiconductor layer in a region including the light emitting layer; an n-side electrode provided on the second surface of the semiconductor layer in a region not including the light emitting layer; an insulating film being more flexible than the semiconductor layer, the insulating film provided on the second surface and a side surface of the semiconductor layer, and the insulating film having a first opening reaching the p-side electrode and a second opening reaching the n-side electrode; a p-side interconnection layer provided on the insulating film and connected to the p-side electrode; and an n-side interconnection layer provided on the insulating film and connected to the n-side electrode.
摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，包括第一表面，与第一表面相对的第二表面和发光层; p侧电极，设置在包括发光层的区域中的半导体层的第二表面上; 在不包括发光层的区域中设置在半导体层的第二表面上的n侧电极; 绝缘膜比半导体层更柔性，设置在第二表面上的绝缘膜和半导体层的侧表面，绝缘膜具有到达p侧电极的第一开口和到达p侧电极的第二开口， 侧电极; p侧互连层，设置在绝缘膜上并连接到p侧电极; 以及设置在绝缘膜上并连接到n侧电极的n侧互连层。
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