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    Dielectric resonator apparatus including means for adjusting the degree of coupling
    52.
    发明授权
    Dielectric resonator apparatus including means for adjusting the degree of coupling 失效
    介质谐振器装置包括用于调节耦合度的装置

    公开(公告)号：US5537082A

    公开(公告)日：1996-07-16

    申请号：US198819

    申请日：1994-02-18

    Applicant: Hitoshi Tada ,  Hideyuki Kato ,  Tatsuya Tsujiguchi ,  Yukihiro Kitaichi ,  Tadahiro Yorita ,  Hisashi Mori ,  Haruo Matsumoto

    Inventor： Hitoshi Tada ,  Hideyuki Kato ,  Tatsuya Tsujiguchi ,  Yukihiro Kitaichi ,  Tadahiro Yorita ,  Hisashi Mori ,  Haruo Matsumoto

    IPC: H01P1/205

    CPC classification number: H01P1/2056

    Abstract: A compact dielectric resonator apparatus is comprised of a dielectric block having a plurality of mutually parallel throughholes formed therethrough with inner surfaces covered with a conductive film so as to provide coaxial resonators. The degree of coupling between a mutually adjacent pair of such dielectric resonators can be adjusted by forming grooves, a bottomed hole or a slit or burying a conductive plate therebetween in the dielectric block, and varying physical characteristics of such grooves, bottomed hole, slit and/or conductive plate, without changing the separations between the throughholes or the external dimensions of the dielectric block.

    Abstract translation: 紧凑的介质谐振器装置包括具有多个彼此平行的通孔，其内表面被导电膜覆盖以便提供同轴谐振器的介质块。 可以通过在介质块中形成沟槽，有底孔或狭缝或在其间埋设导电板来调节相互相邻的一对这样的介电谐振器之间的耦合程度，以及这些沟槽，有底孔，狭缝和 /或导电板，而不改变通孔之间的间隔或介质块的外部尺寸。

    Semiconductor laser element structure
    53.
    发明授权
    Semiconductor laser element structure 失效
    半导体激光元件结构

    公开(公告)号：US5418799A

    公开(公告)日：1995-05-23

    申请号：US147499

    申请日：1993-11-05

    Applicant: Hitoshi Tada

    Inventor： Hitoshi Tada

    IPC: H01L21/301 ,  H01S5/00 ,  H01S5/02 ,  H01S3/19

    CPC classification number: H01S5/0201 ,  H01S5/0202

    Abstract: A semiconductor laser device element substrate includes a plurality of semiconductor laser device elements arranged in an array on a semiconductor substrate, the array including a plurality of rows and a plurality of columns, laser resonator facets being located at the boundaries between respective rows of the semiconductor laser device elements, and element separation guiding grooves, for guiding separation of the substrate into a plurality of divided semiconductor laser devices, the grooves being located at the boundaries between the semiconductor laser device elements of the respective columns, wherein the element separation guiding grooves are arranged at positions on different straight lines running in the column direction for each group at least two adjacent rows. Therefore, even if some forces are applied to the substrate, the forces are not concentrated on a point, whereby wafer cracking can be prevented.

    Abstract translation: 半导体激光器件元件基板包括在半导体衬底上排列成阵列的多个半导体激光器件元件，该阵列包括多个行和多个列，激光谐振器面位于半导体的各行之间的边界处 激光装置元件和元件分离引导槽，用于将基板分离成多个划分的半导体激光器件，所述槽位于各列的半导体激光器件元件之间的边界处，其中元件分离引导槽是 布置在每组至少两个相邻行上在列方向上运行的不同直线上的位置。 因此，即使有一些力施加到基板上，力也不集中在一个点上，从而可以防止晶片破裂。

    Method for producing semiconductor device
    54.
    发明授权
    Method for producing semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US5316967A

    公开(公告)日：1994-05-31

    申请号：US975109

    申请日：1992-11-12

    Applicant: Nobuaki Kaneno ,  Hirotaka Kizuki ,  Norio Hayafuji ,  Tetsuo Shiba ,  Hitoshi Tada

    Inventor： Nobuaki Kaneno ,  Hirotaka Kizuki ,  Norio Hayafuji ,  Tetsuo Shiba ,  Hitoshi Tada

    IPC: H01L21/20 ,  H01L21/308 ,  H01S5/20 ,  H01S5/223 ,  H01S5/227 ,  H01S5/323

    CPC classification number: H01L21/3081 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/0262 ,  H01S5/2231 ,  H01S2304/04 ,  H01S5/2081 ,  H01S5/2277 ,  H01S5/32325

    Abstract: In a method for producing a semiconductor device, a first semiconductor layer is epitaxially grown on a semiconductor substrate, an insulating film pattern is formed on the first semiconductor layer, and portions of the first semiconductor layer are removed by wet etching using the insulating film pattern as a mask to leave a ridge having a reverse mesa shape and a width. Ends of the insulating film pattern are removed by etching to approximately the width of the ridge, a second semiconductor layer is epitaxially grown on opposite sides of the ridge, and a third semiconductor layer is epitaxially grown on the ridge and the second semiconductor layer. The second semiconductor layer is evenly grown without concave portions at opposite sides of the ridge. In addition, the third semiconductor layer is evenly grown on the ridge and the second semiconductor layer, and an electrode reliably connects the surface of the third semiconductor layer. A semiconductor device with good performance and high reliability is reproducibly manufactured.

    Abstract translation: 在制造半导体器件的方法中，在半导体衬底上外延生长第一半导体层，在第一半导体层上形成绝缘膜图案，并且通过使用绝缘膜图案的湿蚀刻去除第一半导体层的部分 作为掩模，离开具有反台面形状和宽度的脊。 绝缘膜图案的端部通过蚀刻到脊的宽度去除，在脊的相对侧上外延生长第二半导体层，并且在脊和第二半导体层上外延生长第三半导体层。 第二半导体层在脊的相对侧均匀生长而没有凹部。 此外，第三半导体层均匀地生长在脊和第二半导体层上，并且电极可靠地连接第三半导体层的表面。 可重复地制造具有良好性能和高可靠性的半导体器件。

    SEMICONDUCTOR LASER DEVICE
    55.
    发明申请
    SEMICONDUCTOR LASER DEVICE 审中-公开
    半导体激光器件

    公开(公告)号：US20110013655A1

    公开(公告)日：2011-01-20

    申请号：US12823179

    申请日：2010-06-25

    Applicant: Tadashi Takase ,  Hitoshi Tada ,  Hiroaki Maehara ,  Yoshihiro Hisa ,  Hitoshi Sakuma

    Inventor： Tadashi Takase ,  Hitoshi Tada ,  Hiroaki Maehara ,  Yoshihiro Hisa ,  Hitoshi Sakuma

    IPC: H01S5/22

    CPC classification number: H01S5/02272 ,  G11B7/1275 ,  G11B2007/0006 ,  H01S5/0224 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2301/14

    Abstract: In a semiconductor laser device a dual wavelength semiconductor laser chip is joined onto a submount, junction down, to reduce built-in stress produced between the laser chip and the submount and to decrease polarization angles of the two respective lasers. SnAg solder is used to join the dual wavelength semiconductor laser chip onto the submount. When joining, with respect to each of the two lasers, a ratio of a distance between the center line of a waveguide and an end, placed at a lateral side of the laser chip, of a portion joining the laser chip and the submount, to a distance between the center line of the waveguide and another end, placed toward the center of the laser chip, of the portion joining the laser chip and the submount, falls within a range of 0.69 to 1.46.

    Abstract translation: 在半导体激光器件中，双波长半导体激光器芯片被连接到基座上，结合下来，以减少在激光芯片和底座之间产生的内在应力，并降低两个激光器的偏振角。 SnAg焊料用于将双波长半导体激光芯片连接到基座上。 当连接时，相对于两个激光器中的每一个，将波导的中心线与放置在激光芯片的侧面的端部之间的距离与将激光芯片和底座接合的部分的比率与 波导的中心线与接合激光芯片和底座的部分朝激光芯片的中心放置的另一端之间的距离在0.69〜1.46的范围内。

    Production method for dielectric resonator device
    56.
    发明授权
    Production method for dielectric resonator device 有权
    介质谐振器装置的制造方法

    公开(公告)号：US07308749B2

    公开(公告)日：2007-12-18

    申请号：US10238446

    申请日：2002-09-09

    Applicant: Takahiro Okada ,  Jinsei Ishihara ,  Hideyuki Kato ,  Hitoshi Tada

    Inventor： Takahiro Okada ,  Jinsei Ishihara ,  Hideyuki Kato ,  Hitoshi Tada

    IPC: H04R31/00

    CPC classification number: H01P11/007 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/49156 ,  Y10T29/49165

    Abstract: A method of forming a dielectric resonator from an inner-conductor-formed hole that has a substantially rectangular or substantially elliptical cross section in a direction perpendicular to the depth direction thereof, by placing a rotary cutting disk in contact with the edge of the opening of the inner-conductor-formed hole, and removing portions of an outer conductor and the inner conductor in the contact portion with the rotary cutting disk, thereby separating the inner conductor and the outer conductor.

    Abstract translation: 一种从内导体形成的孔形成介质谐振器的方法，该方法是通过将旋转切割盘与开口的开口的边缘相接触而在垂直于其深度方向的方向上具有大致矩形或基本上椭圆形的横截面 内部导体形成的孔，以及外部导体的去除部分和与旋转切割盘的接触部分中的内部导体，从而分离内部导体和外部导体。

    Semiconductor laser
    57.
    发明申请
    Semiconductor laser 有权
    半导体激光器

    公开(公告)号：US20060098704A1

    公开(公告)日：2006-05-11

    申请号：US11269627

    申请日：2005-11-09

    Applicant: Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

    Inventor： Tsutomu Yamaguchi ,  Takehiro Nishida ,  Harumi Nishiguchi ,  Hitoshi Tada ,  Yasuaki Yoshida

    IPC: H01S5/00

    CPC classification number: H01S5/22

    Abstract: A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.

    Abstract translation: 提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的 。 确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的大小（E2）提供。 大于0.0001且小于0.01的比E1 / E2。 在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。 因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状 水平方向的远场模式是稳定的。

    Dielectric filter, dielectric duplexer, and communication apparatus
    58.
    发明授权
    Dielectric filter, dielectric duplexer, and communication apparatus 有权
    介质滤波器，介质双工器和通信设备

    公开(公告)号：US06940364B2

    公开(公告)日：2005-09-06

    申请号：US10805353

    申请日：2004-03-22

    Applicant: Masayuki Atokawa ,  Hitoshi Tada ,  Hideyuki Kato

    Inventor： Masayuki Atokawa ,  Hitoshi Tada ,  Hideyuki Kato

    IPC: H01P1/205 ,  H01P1/213 ,  H01P7/04 ,  H01P5/12

    CPC classification number: H01P1/2136 ,  H01P1/2056

    Abstract: A dielectric filter provided with a dielectric block including at least four resonant through holes that are adjacent to each other. A multipath slot is arranged near three adjacent through holes of the at least four resonant through holes. The multipath slot has an inner conductor formed on an inner surface thereof in order to generate a first capacitance between a first area near the open end of each of the three adjacent through holes and the inner conductor of the multipath slot. A step is formed so that a second capacitance is generated between a second area near the open end of each of two through holes of the at least four resonant through holes and an outer conductor located within the step. An attenuation peak is generated at the lower-frequency side of the passband with the multipath slot and the three adjacent through holes, and an attenuation peak is generated at the higher-frequency side of the passband with the two through holes and the outer conductor within the step.

    Abstract translation: 一种介质滤波器，其具有包括彼此相邻的至少四个谐振通孔的介质块。 多路槽位于至少四个谐振通孔的三个相邻通孔附近。 多径槽具有形成在其内表面上的内导体，以便在三个相邻通孔中的每一个的开口端附近的第一区域和多路槽的内导体之间产生第一电容。 形成台阶，使得在至少四个谐振通孔的两个通孔的开口端附近的第二区域和位于台阶内的外部导体之间产生第二电容。 在具有多径槽和三个相邻通孔的通带的低频侧产生衰减峰值，并且在通带的高频侧产生衰减峰值，其中两个通孔和外部导体在 的步骤

    Dielectric filter, dielectric duplexer, and communication apparatus
    59.
    发明授权
    Dielectric filter, dielectric duplexer, and communication apparatus 有权
    介质滤波器，介质双工器和通信设备

    公开(公告)号：US06930571B2

    公开(公告)日：2005-08-16

    申请号：US10422987

    申请日：2003-04-25

    Applicant: Hitoshi Tada ,  Hideyuki Kato

    Inventor： Hitoshi Tada ,  Hideyuki Kato

    IPC: H01P1/205 ,  H01P1/212 ,  H01P1/213 ,  H01P1/30 ,  H01P1/202

    CPC classification number: H01P1/2056 ,  H01P1/213

    Abstract: A dielectric filter includes a dielectric block having a plurality of through holes; an outer conductor provided on an outer surface of the dielectric block; and inner conductors provided on inner surfaces of the plurality of through holes. The dielectric filter also includes a first dielectric provided between the respective inner conductors and the outer conductor; and at least one second dielectric provided between the inner conductors of two adjacent through holes. The temperature coefficient of the resonant frequency of the first dielectric is different from that of the second dielectric. If inductive coupling between the adjacent resonators generates an attenuation pole at a frequency higher than a pass band, the temperature coefficient of the resonant frequency of the first dielectrics is set to a predetermined positive value, and the temperature coefficient of the resonant frequency of the second dielectric is set to a predetermined negative value.

    Abstract translation: 介质滤波器包括具有多个通孔的介质块; 设置在介质块的外表面上的外导体; 以及设置在所述多个通孔的内表面上的内部导体。 介质滤波器还包括设置在各个内部导体和外部导体之间的第一电介质; 以及设置在两个相邻通孔的内部导体之间的至少一个第二电介质。 第一电介质的谐振频率的温度系数与第二电介质的温度系数不同。 如果相邻谐振器之间的电感耦合产生高于通带的频率的衰减极，则将第一电介质的谐振频率的温度系数设定为预定的正值，将第二电感的谐振频率的温度系数 电介质被设定为预定的负值。

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