公开(公告)号：US20160172719A1

公开(公告)日：2016-06-16

申请号：US15049803

申请日：2016-02-22

申请人： Chia-Fa Chang ,  Hua Chung ,  Ligong Wang ,  Yung Fa Chueh

发明人： Chia-Fa Chang ,  Hua Chung ,  Ligong Wang ,  Yung Fa Chueh

IPC分类号： H01M10/44 ,  G06F1/28 ,  H02J7/00 ,  G06F1/26

CPC分类号： H01M10/44 ,  G06F1/263 ,  G06F1/28 ,  H01M10/4257 ,  H01M2010/4271 ,  H01M2010/4278 ,  H01M2220/30 ,  H02J7/0021

摘要： Desktop power use behavior may be detected while a portable information handling system or any other type of battery powered information handling system is operating on external power such as an AC adapter. The desktop power use behavior may be detected by monitoring one or more power usage parameters to detect usage characteristics that indicate a battery powered information handling system is being operated in a manner that is similar to operation of a desktop information handling system. Upon detection of desktop behavior, one or more processing devices of the information handling system may respond by taking one or more desktop use response actions.

摘要翻译： 当便携式信息处理系统或任何其他类型的电池供电的信息处理系统在诸如AC适配器的外部电源上操作时，可以检测桌面电力使用行为。 可以通过监视一个或多个功率使用参数来检测桌面电力使用行为，以检测指示以类似于桌面信息处理系统的操作的方式操作电池供电的信息处理系统的使用特性。 在检测到桌面行为时，信息处理系统的一个或多个处理设备可以通过采取一个或多个桌面使用响应动作来做出响应。

公开(公告)号：US09300015B2

公开(公告)日：2016-03-29

申请号：US12799871

申请日：2010-05-04

申请人： Chia-Fa Chang ,  Hua Chung ,  Ligong Wang ,  Yung Fa Chueh

发明人： Chia-Fa Chang ,  Hua Chung ,  Ligong Wang ,  Yung Fa Chueh

IPC分类号： G06F1/26 ,  H01M10/42 ,  G06F1/28

CPC分类号： H01M10/44 ,  G06F1/263 ,  G06F1/28 ,  H01M10/4257 ,  H01M2010/4271 ,  H01M2010/4278 ,  H01M2220/30 ,  H02J7/0021

摘要： Desktop power use behavior may be detected while a portable information handling system or any other type of battery powered information handling, system is operating on external power such as an AC adapter. The desktop power use behavior may be detected by monitoring one or more power usage parameters to detect usage characteristics that indicate a battery powered information handling system is being operated in a manner that is similar to operation of a desktop information handling system. Upon detection of desktop behavior, one or more processing devices of the information handling system may respond by taking one or more desktop use response actions.

摘要翻译： 当便携式信息处理系统或任何其他类型的电池供电的信息处理系统正在诸如AC适配器的外部电源上操作时，可以检测桌面电力使用行为。 可以通过监视一个或多个功率使用参数来检测桌面电力使用行为，以检测指示以类似于桌面信息处理系统的操作的方式操作电池供电的信息处理系统的使用特性。 在检测到桌面行为时，信息处理系统的一个或多个处理设备可以通过采取一个或多个桌面使用响应动作来做出响应。

公开(公告)号：US08764961B2

公开(公告)日：2014-07-01

申请号：US12256418

申请日：2008-10-22

申请人： Qian Luo ,  Arvind Sundarrajan ,  Hua Chung ,  Xianmin Tang ,  Jick M. Yu ,  Murali K. Narasimhan

发明人： Qian Luo ,  Arvind Sundarrajan ,  Hua Chung ,  Xianmin Tang ,  Jick M. Yu ,  Murali K. Narasimhan

IPC分类号： C25D5/34 ,  C25D7/12

CPC分类号： H01L21/76873 ,  C25D5/02 ,  C25D21/12 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76877

摘要： A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.

摘要翻译： 一种用于在电镀过程中选择性地控制导电材料的沉积速率的方法和装置。 在通过电镀在场区域中填充开口之前，掺杂剂主要被结合到衬底的场区域上的导电种子层中。 衬底被定位在一个或多个处理室中，形成阻挡层和导电种子层。 在室内提供掺杂剂前体，并且在电压偏置或没有电压偏置的情况下电离。 掺杂剂主要并入到场区域上的导电种子层中。 导电种子层在场区域的电导率相对于开口中的导电种子层的导电率降低，导致电镀期间金属在场区域上的初始沉积速率较低，并且金属沉积中几乎没有或没有空隙形成 在开口。

公开(公告)号：US08668776B2

公开(公告)日：2014-03-11

申请号：US12797999

申请日：2010-06-10

申请人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

发明人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

摘要翻译： 提供了在基板上形成薄层的装置和方法。 处理室具有气体输送组件，该气体输送组件包括具有盖部分的盖和覆盖部件，该盖部分在盖的中心部分处共同限定出扩张通道，该覆盖部件具有从扩张通道延伸到外围的锥形底面 覆盖部件的一部分。 气体管道连接到膨胀通道并且与膨胀通道的中心成一定角度定位，以形成通过膨胀通道的圆形气流。 室盖的底表面的形状和尺寸基本上覆盖基板接收表面。 一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。 扼流圈设置在邻近锥形底面的周边的腔室盖上。

公开(公告)号：US08318266B2

公开(公告)日：2012-11-27

申请号：US11470922

申请日：2006-09-07

申请人： Ling Chen ,  Hua Chung ,  Barry L. Chin ,  Hong Zhang

发明人： Ling Chen ,  Hua Chung ,  Barry L. Chin ,  Hong Zhang

IPC分类号： C23C16/00 ,  C23C14/02 ,  H05H1/00

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

公开(公告)号：US08119525B2

公开(公告)日：2012-02-21

申请号：US12037578

申请日：2008-02-26

申请人： Jick M. Yu ,  Wei D. Wang ,  Rongjun Wang ,  Hua Chung

发明人： Jick M. Yu ,  Wei D. Wang ,  Rongjun Wang ,  Hua Chung

IPC分类号： H01L21/44

CPC分类号： H01L21/76879 ,  C25D5/02 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76862 ,  H01L21/76873

摘要： Methods of controlling deposition of metal on field regions of a substrate in an electroplating process are provided. In one aspect, a dielectric layer is deposited under plasma on the field region of a patterned substrate, leaving a conductive surface exposed in the openings. Electroplating on the field region is reduced or eliminated, resulting in void-free features and minimal excess plating. In another aspect, a resistive layer, which may be a metal, is used in place of the dielectric. In a further aspect, the surface of the conductive field region is modified to change its chemical potential relative to the sidewalls and bottoms of the openings.

摘要翻译： 提供了在电镀工艺中控制金属在基片的场区上沉积的方法。 在一个方面，电介质层在等离子体上沉积在图案化衬底的场区上，留下在开口中暴露的导电表面。 场区域上的电镀被减少或消除，导致无空隙特征和最小的多余电镀。 在另一方面，可以使用可以是金属的电阻层来代替电介质。 在另一方面，导电场区域的表面被修改以相对于开口的侧壁和底部改变其化学势。

公开(公告)号：US07846840B2

公开(公告)日：2010-12-07

申请号：US12645117

申请日：2009-12-22

申请人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung

发明人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung

IPC分类号： H01L21/44

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.

公开(公告)号：US07780788B2

公开(公告)日：2010-08-24

申请号：US11077753

申请日：2005-03-11

申请人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

发明人： Ling Chen ,  Vincent Ku ,  Dien-Yeh Wu ,  Hua Chung ,  Alan Ouye ,  Norman Nakashima

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871

摘要： Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel, The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

摘要翻译： 提供了在基板上形成薄层的装置和方法。 处理室具有气体输送组件，其包括具有盖部分的盖和覆盖部件，所述盖部在盖的中心部分处共同限定出扩张通道，所述覆盖部件具有从扩张通道延伸到外围的锥形底面 覆盖部件的一部分。 气体管道连接到膨胀通道并且与膨胀通道的中心成角度地定位，以形成通过膨胀通道的圆形气体流动。腔室盖的底表面的形状和尺寸基本上覆盖基底接收表面。 一个或多个阀联接到通道，并且一个或多个气体源联接到每个阀。 扼流圈设置在邻近锥形底面的周边的腔室盖上。

公开(公告)号：US07595263B2

公开(公告)日：2009-09-29

申请号：US11691617

申请日：2007-03-27

申请人： Hua Chung ,  Rongjun Wang ,  Nirmalya Maity

发明人： Hua Chung ,  Rongjun Wang ,  Nirmalya Maity

IPC分类号： H01L21/4763

CPC分类号： C23C16/45529 ,  C23C16/02 ,  C23C16/0281 ,  C23C16/14 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76876

摘要： Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.

摘要翻译： 提供了通过原子层沉积处理衬底以沉积一层或多层材料层的阻挡层的方法。 在一个方面，提供了一种处理衬底的方法，包括通过交替地引入含有金属的化合物的一种或多种脉冲和含氮化合物的一个或多个脉冲，在衬底表面的至少一部分上沉积金属氮化物阻挡层 以及通过交替地引入一种或多种含金属化合物的脉冲和一种或多种还原剂的脉冲，在金属氮化物阻挡层的至少一部分上沉积金属阻挡层。 可以在沉积金属氮化物阻挡层和/或金属阻挡层之前在衬底表面上进行浸泡工艺。

公开(公告)号：US20090202710A1

公开(公告)日：2009-08-13

申请号：US12365310

申请日：2009-02-04

申请人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

发明人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

IPC分类号： C23C16/18

CPC分类号： H01L29/495 ,  C23C16/18 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/28079 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76864 ,  H01L29/4958 ,  H01L29/517

摘要： In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate. The tantalum barrier layer may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride.

摘要翻译： 在一个实施方案中，提供了一种用于在基底上形成含钽材料的方法，其包括将含有叔戊酰亚氨基 - 三（二甲基氨基）钽（TAIMATA）的液体钽前体加热至至少30℃的温度以形成钽 前体气体，并在原子层沉积过程中将衬底暴露于载气的连续流动。 该方法进一步通过将钽前体气体脉冲到载气中并将钽前驱体气体吸附在基底上以在其上形成钽前体层而使衬底暴露于钽前体气体。 随后，通过在衬底上形成钽阻挡层，将含二次元素的气体脉冲送入载气中，使钽前体层暴露于至少一个含二元素气体。 钽阻挡层可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。