公开(公告)号：US09437785B2

公开(公告)日：2016-09-06

申请号：US12538602

申请日：2009-08-10

申请人： Michael John Bergmann ,  Kevin Ward Haberern ,  Bradley E. Williams ,  Winston T. Parker ,  Arthur Fong-Yuen Pun ,  Doowon Suh ,  Matthew Donofrio

发明人： Michael John Bergmann ,  Kevin Ward Haberern ,  Bradley E. Williams ,  Winston T. Parker ,  Arthur Fong-Yuen Pun ,  Doowon Suh ,  Matthew Donofrio

IPC分类号： H01L33/00 ,  H01L33/46 ,  H01L33/20

CPC分类号： H01L33/46 ,  H01L33/007 ,  H01L33/20 ,  H01L2224/73265

摘要： Light emitting diodes include a silicon carbide substrate having first and second opposing faces, a diode region on the first face, anode and cathode contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer having an index of refraction that is lower than the silicon carbide substrate, and a reflective layer on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer may be provided between the hybrid reflector and the die attach layer.

摘要翻译： 发光二极管包括具有第一和第二相对面的碳化硅衬底，第一面上的二极管区域，与碳化硅衬底相对的二极管区域上的阳极和阴极接触以及与二极管区域相对的碳化硅衬底上的混合反射器。 混合反射器包括具有低于碳化硅衬底的折射率的透明层和与衬底相对的透明层上的反射层。 可以在混合反射器上设置芯片附着层，与碳化硅衬底相对。 可以在混合反射器和管芯附着层之间设置阻挡层。

公开(公告)号：US09349596B2

公开(公告)日：2016-05-24

申请号：US12474720

申请日：2009-05-29

申请人： Anant Agarwal ,  Sei-Hyung Ryu ,  Matthew Donofrio

发明人： Anant Agarwal ,  Sei-Hyung Ryu ,  Matthew Donofrio

IPC分类号： H01L21/76 ,  H01L21/04 ,  H01L29/66 ,  H01L21/268

CPC分类号： H01L21/0485 ,  H01L21/0495 ,  H01L21/268 ,  H01L29/6606 ,  Y10S438/931

摘要： Methods of forming a silicon carbide semiconductor device are disclosed. The methods include forming a semiconductor device at a first surface of a silicon carbide substrate having a first thickness, and mounting a carrier substrate to the first surface of the silicon carbide substrate. The carrier substrate provides mechanical support to the silicon carbide substrate. The methods further include thinning the silicon carbide substrate to a thickness less the first thickness, forming a metal layer on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate, and locally annealing the metal layer to form an ohmic contact on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate. The silicon carbide substrate is singulated to provide a singulated semiconductor device.

公开(公告)号：US09166126B2

公开(公告)日：2015-10-20

申请号：US13017845

申请日：2011-01-31

申请人： Matthew Donofrio ,  Howard Nordby ,  Peter S. Andrews

发明人： Matthew Donofrio ,  Howard Nordby ,  Peter S. Andrews

IPC分类号： H01L33/00 ,  H01L33/50 ,  H01L33/44 ,  H01L33/54

CPC分类号： H01L33/508 ,  H01L33/44 ,  H01L33/505 ,  H01L33/507 ,  H01L33/54 ,  H01L2224/16225

摘要： Methods are disclosed including applying a conformal coating to multiple light emitters. The conformal coating forms in gap areas between adjacent ones of the light emitters. The plurality of light emitters are separated into individual light emitters. The individual light emitters include the conformal coating that extends to a space corresponding to respective gap areas. Light emitting structures are disclosed including a semiconductor light emitting diode (LED) having an active region and a conformal coating including a first portion and a second portion, the first portion corresponding to at least one surface of the LED and the second portion extending from the first portion.

摘要翻译： 公开了包括对多个发光体施加保形涂层的方法。 在相邻的发光体之间的间隙区域中形成保形涂层。 多个发光体被分离为各个发光体。 单个光发射器包括延伸到对应于相应间隙区域的空间的保形涂层。 公开了一种发光结构，其包括具有有源区和包括第一部分和第二部分的保形涂层的半导体发光二极管（LED），所述第一部分对应于LED的至少一个表面，而第二部分从 第一部分。

公开(公告)号：USD691973S1

公开(公告)日：2013-10-22

申请号：US29396909

申请日：2011-07-08

申请人： Matthew Donofrio ,  Peter Andrews

设计人： Matthew Donofrio ,  Peter Andrews

公开(公告)号：US08558252B2

公开(公告)日：2013-10-15

申请号：US13219486

申请日：2011-08-26

申请人： James Ibbetson ,  Bernd Keller ,  Ronan Letoquin ,  Matthew Donofrio ,  Michael Bergmann

发明人： James Ibbetson ,  Bernd Keller ,  Ronan Letoquin ,  Matthew Donofrio ,  Michael Bergmann

IPC分类号： H01L29/18 ,  H01L29/205 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L33/504 ,  H01L33/0095 ,  H01L2933/0041

摘要： Methods for fabricating semiconductor devices such as LED chips with emission wavelength correction and devices fabricated using these methods. Different embodiments include sequential coating methods that provide two or more coatings or layers of conversion material over LEDs, which can be done at the wafer level. The methods are particularly applicable to fabricating LED chips that emit a warm white light, which typically requires covering LEDs with one or more wavelength conversion materials such as phosphors. In one embodiment, a base wavelength conversion material is applied to the semiconductor devices. A portion of the base conversion material is removed. At least two different tuning wavelength conversion materials are also applied to the semiconductor devices, either before or after the application of the base conversion material.

摘要翻译： 用于制造具有发射波长校正的LED芯片的半导体器件的方法以及使用这些方法制造的器件。 不同的实施方案包括在LED上提供两个或更多个转化材料的涂层或多层的顺序涂覆方法，其可以在晶片级完成。 该方法特别适用于制造发出暖白光的LED芯片，其通常需要用一种或多种波长转换材料如磷光体覆盖LED。 在一个实施例中，将基础波长转换材料施加到半导体器件。 一部分碱转换材料被去除。 在应用基底转换材料之前或之后，至少两种不同的调谐波长转换材料也被应用于半导体器件。

公开(公告)号：US20120319142A1

公开(公告)日：2012-12-20

申请号：US13369996

申请日：2012-02-09

申请人： Matthew Donofrio

发明人： Matthew Donofrio

IPC分类号： H01L33/50 ,  H01L33/58 ,  H01L33/08

CPC分类号： H01L25/0753 ,  H01L33/20 ,  H01L33/505 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2924/10155 ,  H01L2924/00014

摘要： A light emitting device is fabricated by providing a mounting substrate and an array of light emitting diode dies adjacent the mounting substrate to define gaps. A gel that is diluted in a solvent is applied on the substrate and on the array of light emitting dies. At least some of the solvent is evaporated so that the gel remains in the gaps, but does not completely cover the light emitting diode dies. For example, the gel substantially recedes from the substrate beyond the array of light emitting diode dies and also substantially recedes from an outer face of the light emitting diode dies. Related light emitting device structures are also described.

摘要翻译： 通过提供安装基板和与安装基板相邻的发光二极管管芯阵列来限定间隙来制造发光器件。 将在溶剂中稀释的凝胶施加在基板上和发光管芯阵列上。 蒸发至少一些溶剂，使得凝胶留在间隙中，但不完全覆盖发光二极管管芯。 例如，凝胶基本上从衬底超过发光二极管管芯的阵列后退，并且基本上从发光二极管管芯的外表面后退。 还描述了相关的发光器件结构。

公开(公告)号：US20120193662A1

公开(公告)日：2012-08-02

申请号：US13178791

申请日：2011-07-08

申请人： Matthew Donofrio ,  John Adam Edmond ,  Peter Scott Andrews ,  David Der Chi Chang

发明人： Matthew Donofrio ,  John Adam Edmond ,  Peter Scott Andrews ,  David Der Chi Chang

IPC分类号： H01L33/50

CPC分类号： H01L33/60 ,  H01L25/0753 ,  H01L33/20 ,  H01L33/486 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/16

摘要： A light emitting device includes a mounting substrate having a reflective layer that defines spaced apart anode and cathode pads, and a gap between them. A light emitting diode die is flip-chip mounted on the mounting substrate, such that the anode contact of the LED die is bonded to the anode pad and the cathode contact of the LED die is bonded to the cathode pad. A lens extends from the mounting substrate to surround the LED die. The reflective layer extends on the mounting substrate to cover substantially all of the mounting substrate that lies beneath the lens, excluding the gap, and may also extend beyond the lens.

摘要翻译： 发光器件包括具有限定间隔开的阳极和阴极焊盘以及它们之间的间隙的反射层的安装基板。 将发光二极管管芯倒装安装在安装基板上，使得LED管芯的阳极接触件接合到阳极焊盘，并将LED管芯的阴极接触件接合到阴极焊盘。 透镜从安装基板延伸以围绕LED管芯。 反射层在安装基板上延伸以覆盖位于透镜下方的基本上所有的安装基板，不包括间隙，并且还可以延伸超出透镜。

公开(公告)号：US20120153343A1

公开(公告)日：2012-06-21

申请号：US13406251

申请日：2012-02-27

申请人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, JR. ,  Matthew Donofrio ,  John Edmond

发明人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, JR. ,  Matthew Donofrio ,  John Edmond

IPC分类号： H01L33/48 ,  H01L33/36

CPC分类号： H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.

摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。

公开(公告)号：US08193544B2

公开(公告)日：2012-06-05

申请号：US13018254

申请日：2011-01-31

申请人： Matthew Donofrio

发明人： Matthew Donofrio

IPC分类号： H01L33/00

CPC分类号： H01L33/005 ,  H01L33/44 ,  H01L33/508 ,  H01L2933/0041

摘要： A method for fabricating a plurality of LED chips comprises providing a plurality of LEDs and forming a plurality of spacers each of which is on at least one of the LEDs. Coating the LEDs with a conversion material, each of the spacers reducing the amount of conversion material over its one of the LEDs. This reduction causes the plurality of LED chips to emit a wavelength of light in response to an electrical signal that is within a standard deviation of a target wavelength. LEDs, LED chips and LED chip wafers are fabricated using the method according to the present invention. One embodiment of an LED chip wafer according to the present invention comprises a plurality of LEDs on a wafer and a plurality of a spacers, each of which is on a respective one of the LEDs. A conversion material at least partially covers the LEDs and spacers, with at least some light from the LEDs passing through the conversion material and is converted. The spacers cause the LED chips to emit light having a wavelength within a standard deviation compared to the similar LED chips without the spacers where at least some of the LED chips emit light a wavelength of light outside the standard deviation.

摘要翻译： 一种用于制造多个LED芯片的方法包括提供多个LED并且形成多个间隔件，每个衬垫位于至少一个LED上。 用转换材料涂覆LED，每个间隔物减少其一个LED上的转换材料的量。 这种减少使得多个LED芯片响应于在目标波长的标准偏差内的电信号而发出波长的光。 使用根据本发明的方法制造LED，LED芯片和LED芯片晶片。 根据本发明的LED芯片晶片的一个实施例包括晶片上的多个LED和多个间隔件，每个间隔件在相应的一个LED上。 转换材料至少部分地覆盖LED和间隔物，其中来自LED的至少一些光通过转换材料并被转换。 间隔物导致LED芯片发射具有标准偏差波长的光，与没有间隔物的类似LED芯片相比，其中至少一些LED芯片发射出超出标准偏差的波长的光。

公开(公告)号：US20100155750A1

公开(公告)日：2010-06-24

申请号：US12317528

申请日：2008-12-23

申请人： Matthew Donofrio

发明人： Matthew Donofrio

IPC分类号： H01L33/00 ,  H01L21/66

CPC分类号： H01L33/005 ,  H01L33/44 ,  H01L33/508 ,  H01L2933/0041

摘要： A method for fabricating a plurality of LED chips comprises providing a plurality of LEDs and forming a plurality of spacers each of which is on at least one of the LEDs. Coating the LEDs with a conversion material, each of the spacers reducing the amount of conversion material over its one of the LEDs. This reduction causes the plurality of LED chips to emit a wavelength of light in response to an electrical signal that is within a standard deviation of a target wavelength. LEDs, LED chips and LED chip wafers are fabricated using the method according to the present invention. One embodiment of an LED chip wafer according to the present invention comprises a plurality of LEDs on a wafer and a plurality of a spacers, each of which is on a respective one of the LEDs. A conversion material at least partially covers the LEDs and spacers, with at least some light from the LEDs passing through the conversion material and is converted. The spacers cause the LED chips to emit light having a wavelength within a standard deviation compared to the similar LED chips without the spacers where at least some of the LED chips emit light a wavelength of light outside the standard deviation.

摘要翻译： 一种用于制造多个LED芯片的方法包括提供多个LED并且形成多个间隔件，每个衬垫位于至少一个LED上。 用转换材料涂覆LED，每个间隔物减少其一个LED上的转换材料的量。 这种减少使得多个LED芯片响应于在目标波长的标准偏差内的电信号而发出波长的光。 使用根据本发明的方法制造LED，LED芯片和LED芯片晶片。 根据本发明的LED芯片晶片的一个实施例包括晶片上的多个LED和多个间隔件，每个间隔件在相应的一个LED上。 转换材料至少部分地覆盖LED和间隔物，其中来自LED的至少一些光通过转换材料并被转换。 间隔物导致LED芯片发射具有标准偏差波长的光，与没有间隔物的类似LED芯片相比，其中至少一些LED芯片发射出超出标准偏差的波长的光。