摘要:
A method for manufacturing a wafer level package is provided that enables suppressing the wearing of a cutter and extending the lifetime of the cutter, including forming insulating first resin over the top face of a substrate, which includes a groove for wiring to be formed; forming a film of first metal that is to serve as a portion of the wiring on the top face of the first resin using physical vapor deposition; forming a film of second metal that is to form a portion of the wiring on the top face of the first metal, with a lower hardness than the first metal; setting a cutter at a height corresponding to a place where the film of the first metal is not formed on a side face of the groove or the film thickness is low; and cutting at least the first resin by scanning the cutter.
摘要:
A purpose of a high-speed signal transmission system of the present invention is to pass a high-speed digital signal through an outside-chip line exchanging a signal with a high speed LSI chip with a band higher than GHz. The high-speed signal transmission system of the present invention has a configuration of: insertion of a circuit for feeding back received information and adjusting a waveform at a sending side based on genetic algorithm; a device structure for automatically performing pump up and pump down of a transistor carrier; a transmission line of a wiring out of a transistor; and elimination of a common power source of a circuit.
摘要:
A memory cell MC includes nMOS transistors for a transfer gate configured to be paired with each other, and one capacitor for data storage connected to the nMOS transistor. A gate electrode of the nMOS transistor is connected to a word line WL, and a drain is connected to a bit line BL. A gate electrode of the nMOS transistor is connected to a word line /WL, and a drain and a source are connected to a ground. The capacitor is connected between a source of the nMOS transistor and the ground. A Y selector circuit is connected between a differential bit line BL, /BL and a differential data line DL, /DL. The Y selector circuit has two pairs of nMOS transistors configured to be paired transistors, respectively.
摘要:
A wiring structure for a transmission line has a ground line (2) and a signal line (1). The signal line (1) is disposed so as to face the ground line (2) through a dielectric (3). A surface of the signal line (1) facing the ground line (2) has a groove extending in the transmission direction. A surface of the ground line (2) facing the signal line (1) also has a groove extending in the transmission direction. The grooves restrain that electromagnetic induction is caused in the signal line (1) due to an electromagnetic field generated by other adjacent signal lines (1).
摘要:
To transmit a high-speed digital signal of several tens GHz via a differential line by connecting a differential line referring to the ground to differential lines not referring to the ground, there is provided a signal transmission system which transmits a digital signal between circuit blocks via a signal transmission line, each of the circuit blocks basically including a functional circuit, a reception/transmission circuit formed separately from the functional circuit and an impedance-matched transmission line (115) formed between reception and transmission ends of the reception/transmission circuit; a differential line (105) referring to the ground (110), led out from a differential output driver, being formed from differential signal lines disposed symmetrically with respect to the ground (110) in the circuit block, only differential pair lines (111, 112) not referring to the ground being extended directly from the differential signal lines disposed symmetrically with respect to the ground in the signal transmission line (115).
摘要:
A CMOS line driver is made up of p- and nMOS transistors. A pMOS varactor is interposed between the source of the pMOS transistor and a power supply, while an nMOS varactor is interposed between the source of the nMOS transistor and ground. The sizes of each of these MOS varactors may be the same as those of the p- or nMOS transistor. Alternatively, each of these MOS varactors may have a channel area twice greater than that of the p- or nMOS transistor. The inverted version of a signal input to the line driver is supplied to the gates of the MOS varactors. In this manner, the MOS transistors, making up the line driver, can switch at a high speed.
摘要:
An electronic device includes a wiring board, and at least one pair of signal lines that is provided on the wiring board in parallel and has an equal length. A chip is mounted on the wiring board and includes at least one differential driver which outputs complementary digital transmit signals to said at least one of lines. A pair of power system lines is provided to supply first and second power supply voltages to the above-mentioned at least one differential driver. The power system lines are parallel to each other and have an equal length.
摘要:
An electronic device which improves speed of signal transmission in a bus wiring system by specifying circuit configuration of a driver circuit and transmission line characteristic impedance. An input/output circuit combines a differential driver of current switch type with a bus wiring system having a transmission line for transmitting a differential complementary digital signal and a termination end resistor matching the transmission line. An integrated circuit chip including the differential driver is mounted on a wiring board including the transmission line and the termination end resistor. The transmission line includes wires having an equal length which have characteristic impedance of 25&OHgr; or less. In combination with the current switch type differential driver, this transmission line structure restricts attenuation of signal energy during transmission and restricts electromagnetic interference between transmission lines close to each other.
摘要:
A cooling apparatus for an electronic device of high calorific density including an elastomer interposed between a semiconductor chip and a heat sink so as to connect them thermally. The elastomer may also be in close contact with a large number of semiconductor chips having various configurations which are mounted on a board, so that the elastomer is thermally connected with them, whereby the elastomer absorbs thermal deformations.
摘要:
A semiconductor device is provided having a semiconductor pellet that is arranged on a substantially central part of a film base in which a metal plate is overlaid with an insulating member, while inner leads are arranged on a peripheral part of the film base in a state in which they are electrically isolated from the metal plate of the film base. External terminals for a power source among external terminals of the semiconductor pellet and middle parts of the metal plate of the film base, as well as inner leads for the power source among the inner leads and peripheral parts of the metal plate are electrically connected by pieces of bonding wire, respectively.