Method for forming a patterned semiconductor film
    54.
    发明授权
    Method for forming a patterned semiconductor film 失效
    用于形成图案化半导体膜的方法

    公开(公告)号:US06498114B1

    公开(公告)日:2002-12-24

    申请号:US09651710

    申请日:2000-08-31

    IPC分类号: H01L2131

    摘要: A process for forming a pattern in a semiconductor film is provided. The process comprises the steps of: providing a substrate; providing an organic semiconductor film adjacent the substrate; and providing a destructive agent adjacent selected portions of the organic semiconductor film, the destructive agent changing a property of selected portions of the organic semiconductor film substantially through the full thickness of the organic semiconductor film such that the property of the selected portions of the organic semiconductor film differs from the property of remaining portions of the organic semiconductor film. A method for manufacturing a transistor comprises the steps of: providing a substrate; providing a gate electrode adjacent the substrate; providing a gate dielectric adjacent the substrate and the gate electrode; providing a source electrode and a drain electrode adjacent the gate dielectric; providing a mask adjacent the gate dielectric in a pattern such that the source electrode, the drain electrode, and a portion of the gate dielectric remain exposed; and providing a semiconductor layer comprising one of an organic semiconductor and a plurality of inorganic colloidal particles, adjacent the source electrode, the drain electrode, the portion of the gate dielectric and the mask, thereby forming the transistor, the semiconductor layer having a thickness less than a thickness of the mask.

    摘要翻译: 提供了一种在半导体膜中形成图案的工艺。 该方法包括以下步骤:提供衬底; 提供邻近所述衬底的有机半导体膜; 并且在所述有机半导体膜的选定部分附近提供破坏性试剂,所述破坏剂基本上改变所述有机半导体膜的全部厚度以改变所述有机半导体膜的选定部分的性质,使得所述有机半导体膜的选定部分的性质 膜与有机半导体膜的剩余部分的性质不同。 一种制造晶体管的方法,包括以下步骤:提供衬底; 在所述衬底附近提供栅电极; 在所述衬底和所述栅极附近提供栅极电介质; 提供邻近栅极电介质的源电极和漏电极; 以图案提供与栅极电介质相邻的掩模,使得源电极,漏电极和栅电介质的一部分保持暴露; 并且提供包括有机半导体和多个无机胶体粒子之一的半导体层,与源电极,漏电极,栅极电介质的部分和掩模相邻,从而形成晶体管,半导体层的厚度较小 比掩模的厚度。