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98 条记录 (耗时 0.023 秒)

    Graded index waveguide
    56.
    发明授权
    Graded index waveguide 失效
    分级索引波导

    公开(公告)号：US06690871B2

    公开(公告)日：2004-02-10

    申请号：US09893263

    申请日：2001-06-27

    申请人： Kevin K. Lee ,  Desmond Lim ,  Kazumi Wada ,  Lionel C. Kimerling

    发明人： Kevin K. Lee ,  Desmond Lim ,  Kazumi Wada ,  Lionel C. Kimerling

    IPC分类号： G02B610

    CPC分类号： G02B6/10 ,  G02B6/105 ,  G02B6/122 ,  G02B6/13 ,  G02B6/132 ,  G02B2006/12176

    摘要： A planar waveguide that has a graded index layer at the core/cladding interface to reduce scattering losses due to core/cladding interface roughness. The refractive index at the core/cladding interface is changed from that of the core to that of cladding gradually by having a graded index layer. The graded index layer reduces the scattering of light traveling in the waveguide by reducing the effect of the roughness at the abrupt interface between the core and the cladding. Using a proper design, the graded index layer also minimizes the modal and polarization dispersion of the optical mode traveling in the waveguide.

    摘要翻译： 平面波导，其在芯/包层界面处具有渐变折射率层，以减少由于芯/包层界面粗糙度引起的散射损耗。 通过具有渐变折射率层，芯/包层界面处的折射率从芯的折射率逐渐改变为包层的折射率。 渐变折射率层通过减小在芯和包层之间的突然界面处的粗糙度的影响来减少在波导管中传播的光的散射。 使用适当的设计，渐变折射率层还使在波导中行进的光学模式的模态和偏振色散最小化。

    All optical switch for optical integrated circuits
    57.
    发明授权
    All optical switch for optical integrated circuits 失效
    所有光开关用于光集成电路

    公开(公告)号：US06684003B2

    公开(公告)日：2004-01-27

    申请号：US09825075

    申请日：2001-04-03

    申请人： Michal Lipson ,  Lionel C. Kimerling

    发明人： Michal Lipson ,  Lionel C. Kimerling

    IPC分类号： G02B635

    CPC分类号： G02F1/3517 ,  G02F1/0126 ,  G02F1/218 ,  G02F2001/213

    摘要： An optical switch operating with an optical pumping source. The switch includes a microcavity structure that is resonant with both the pumping source and the input optical signal. The microcavity structure includes a cavity in between two reflectors. The input optical signal is switched from one to zero, by varying the pump source intensity. The microcavity provides amplification of the pumping energy allowing for a nonlocal optical power source. In addition it also provides a way for fast optical modulation of the input optical signal using continuous wave pumping source.

    摘要翻译： 用光泵浦源操作的光开关。 开关包括与泵浦源和输入光信号共振的微腔结构。 微腔结构包括两个反射器之间的空腔。 通过改变泵浦源强度，将输入光信号从一个切换到零。 微腔提供泵浦能量的放大，允许非局部光功率源。 此外，它还提供了使用连续波泵浦源对输入光信号进行快速光调制的方法。

    Engineering emission wavelengths in laser and light emitting devices
    59.
    发明授权
    Engineering emission wavelengths in laser and light emitting devices 有权
    激光和发光器件中的工程发射波长

    公开(公告)号：US08242480B2

    公开(公告)日：2012-08-14

    申请号：US12821643

    申请日：2010-06-23

    申请人： Lionel C. Kimerling ,  Jifeng Liu ,  Jurgen Michel

    发明人： Lionel C. Kimerling ,  Jifeng Liu ,  Jurgen Michel

    IPC分类号： H01L29/12

    CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3403 ,  H01S5/34333

    摘要： A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.

    摘要翻译： 提供一种发光器件，其包括至少一个第一半导体材料层和至少一个第二半导体材料层。 至少一个近直接带隙材料层位于至少一个第一半导体层和至少一个第二半导体材料层之间。 所述至少一个第一半导体层和所述至少一个第二材料层具有比所述至少一个近直接带隙材料层更大的带隙。 所述至少一个近直接带隙材料层具有小于0.5eV的直接和间接带隙之间的能量差。

    Confined Lateral Growth of Crystalline Material
    60.
    发明申请
    Confined Lateral Growth of Crystalline Material 审中-公开
    结晶材料的限制横向生长

    公开(公告)号：US20120025195A1

    公开(公告)日：2012-02-02

    申请号：US13191682

    申请日：2011-07-27

    申请人： Kevin Andrew McComber ,  Jifeng Liu ,  Jurgen Michel ,  Lionel C. Kimerling

    发明人： Kevin Andrew McComber ,  Jifeng Liu ,  Jurgen Michel ,  Lionel C. Kimerling

    IPC分类号： H01L29/161 ,  C30B19/00 ,  H01L21/203 ,  C30B23/04 ,  H01L21/208 ,  B05C11/00 ,  C30B25/04

    CPC分类号： C30B25/18 ,  C23C16/04 ,  C23C16/06 ,  C30B23/04 ,  C30B25/04 ,  C30B29/08 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L27/1281 ,  H01L29/66742 ,  H01L29/78684

    摘要： In a structure for crystalline material growth, there is provided a lower growth confinement layer and an upper growth confinement layer that is disposed above and vertically separated from the lower growth confinement layer. A lateral growth channel is provided between the upper and lower growth confinement layers, and is characterized by a height that is defined by the vertical separation between the upper and lower growth confinement layers. A growth seed is disposed at a site in the lateral growth channel for initiating crystalline material growth in the channel. A growth channel outlet is included for providing formed crystalline material from the growth channel. With this growth confinement structure, crystalline material can be grown from the growth seed to the lateral growth channel outlet.

    摘要翻译： 在结晶材料生长的结构中，提供了较低的生长限制层和上部生长约束层，其设置在下部生长限制层的上方并与之垂直分离。 在上部和下部生长限制层之间提供横向生长通道，其特征在于由上部和下部生长限制层之间的垂直分隔限定的高度。 将生长种子设置在横向生长通道中的位置以引发通道中的结晶材料生长。 包括生长通道出口用于从生长通道提供形成的结晶材料。 利用这种生长限制结构，可以将结晶物质从生长种子生长到侧生长通道出口。