公开(公告)号：US10672913B2

公开(公告)日：2020-06-02

申请号：US16024967

申请日：2018-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Hirokazu Watanabe ,  Yuhei Sato ,  Yasumasa Yamane ,  Daisuke Matsubayashi

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/66

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

公开(公告)号：US10573758B2

公开(公告)日：2020-02-25

申请号：US15617696

申请日：2017-06-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazuya Hanaoka ,  Daisuke Matsubayashi ,  Yoshiyuki Kobayashi ,  Shunpei Yamazaki ,  Shinpei Matsuda

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/78

Abstract: Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the second oxide film, and a gate electrode in contact with the gate insulating film. A top end portion of the oxide semiconductor film is curved when seen in a channel width direction.

公开(公告)号：US10361291B2

公开(公告)日：2019-07-23

申请号：US15150587

申请日：2016-05-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Yukinori Shima ,  Hajime Tokunaga ,  Toshinari Sasaki ,  Keisuke Murayama ,  Daisuke Matsubayashi

IPC: H01L21/02 ,  H01L27/12 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

Abstract: To reduce defects in an oxide semiconductor film in a semiconductor device. To improve the electrical characteristics and the reliability of a semiconductor device including an oxide semiconductor film. In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

公开(公告)号：US10147681B2

公开(公告)日：2018-12-04

申请号：US15825778

申请日：2017-11-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Daisuke Matsubayashi

IPC: H01L23/485 ,  H01L23/532 ,  H01L29/423 ,  H01L29/08 ,  H01L27/01

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first insulator over a substrate; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator over the first conductor; a fourth insulator in contact with a side surface of the second insulator, a side surface of the first conductor, and a side surface of the third insulator; a fifth insulator in contact with a top surface of the oxide and a side surface of the fourth insulator; and a second conductor in contact with the top surface of the oxide and the fifth insulator. The level of the top surface of the fourth insulator is higher than the level of the top surface of the fifth insulator.

公开(公告)号：US10079238B2

公开(公告)日：2018-09-18

申请号：US15804096

申请日：2017-11-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke Matsubayashi

IPC: H01L27/10 ,  H01L27/108 ,  C23C14/08 ,  H01L21/84 ,  H01L27/105 ,  H01L27/115 ,  H01L27/12 ,  H01L49/02 ,  H01L29/786 ,  H01L27/1156 ,  H01L27/11514 ,  H01L27/06 ,  H01L27/11507

CPC classification number: H01L27/1085 ,  C23C14/08 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10891 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/115 ,  H01L27/11507 ,  H01L27/11514 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1255 ,  H01L28/40 ,  H01L29/78642 ,  H01L29/7869

Abstract: A memory device that is as small in area as possible and has an extremely long data retention period. A transistor with extremely low leakage current is used as a cell transistor of a memory element in a memory device. Moreover, in order to reduce the area of a memory cell, the transistor is formed so that its source and drain are stacked in the vertical direction in a region where a bit line and a word line intersect each other. Further, a capacitor is stacked above the transistor.

公开(公告)号：US10032918B2

公开(公告)日：2018-07-24

申请号：US15488626

申请日：2017-04-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Daisuke Matsubayashi ,  Ryo Tokumaru ,  Yasumasa Yamane ,  Kiyofumi Ogino ,  Taichi Endo ,  Hajime Kimura

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66 ,  H01L27/105 ,  H01L27/12

Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first barrier insulating film; a first gate electrode thereover; a first gate insulating film thereover; an oxide semiconductor film thereover; source and drain electrodes over the oxide semiconductor film; a second gate insulating film over the oxide semiconductor film; a second gate electrode over the second gate insulating film; a second barrier insulating film that covers the oxide semiconductor film, the source and the drain electrodes, and the second gate electrode, and is in contact with side surfaces of the oxide semiconductor film and the source and drain electrodes; and a third barrier insulating film thereover. The first to third barrier insulating films are less likely to transmit hydrogen, water, and oxygen than the first and second gate insulating films. The third barrier insulating film is thinner than the second barrier insulating film. The source and drain electrodes each includes a conductive oxide film in contact with the oxide semiconductor film. The conductive oxide film has more oxygen vacancies than the oxide semiconductor film.

公开(公告)号：US09972718B2

公开(公告)日：2018-05-15

申请号：US15389846

申请日：2016-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Yukinori Shima ,  Hajime Tokunaga ,  Toshinari Sasaki ,  Keisuke Murayama ,  Daisuke Matsubayashi

IPC: H01L21/00 ,  H01L27/146 ,  H01L29/786 ,  H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L29/78606 ,  H01L21/02109 ,  H01L21/02263 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/51 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, and an oxide insulating film covering the transistor. The multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide insulating film contains more oxygen than that in the stoichiometric composition, and in the transistor, by a bias-temperature stress test, threshold voltage does not change or the amount of the change in a positive direction or a negative direction is less than or equal to 1.0 V, preferably less than or equal to 0.5 V.

公开(公告)号：US09899420B2

公开(公告)日：2018-02-20

申请号：US14290251

申请日：2014-05-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Seiko Inoue ,  Shinpei Matsuda ,  Daisuke Matsubayashi ,  Masahiko Hayakawa

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1225 ,  H01L27/1251 ,  H01L27/3258 ,  H01L27/3262

Abstract: In a pixel including a selection transistor, a driver transistor, and a light-emitting element, as the driver transistor, a transistor is used in which a channel is formed in an oxide semiconductor film and its channel length is 0.5 μm or greater and 4.5 μm or less. The driver transistor includes a first gate electrode over an oxide semiconductor film and a second gate electrode below the oxide semiconductor film. The first gate electrode and the second gate electrode are electrically connected to each other and overlap with the oxide semiconductor film. Furthermore, in the selection transistor of a pixel, which does not need to have field-effect mobility as high as that of the driver transistor, a channel length is made longer than at least the channel length of the driver transistor.

公开(公告)号：US09812458B2

公开(公告)日：2017-11-07

申请号：US15240328

申请日：2016-08-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke Matsubayashi

IPC: H01L27/1156 ,  H01L27/108 ,  H01L21/84 ,  H01L27/105 ,  H01L27/115 ,  H01L27/12 ,  H01L49/02 ,  H01L29/786 ,  C23C14/08 ,  H01L27/06 ,  H01L27/11507 ,  H01L27/11514

CPC classification number: H01L27/1085 ,  C23C14/08 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10891 ,  H01L27/10894 ,  H01L27/10897 ,  H01L27/115 ,  H01L27/11507 ,  H01L27/11514 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1255 ,  H01L28/40 ,  H01L29/78642 ,  H01L29/7869

Abstract: A memory device that is as small in area as possible and has an extremely long data retention period. A transistor with extremely low leakage current is used as a cell transistor of a memory element in a memory device. Moreover, in order to reduce the area of a memory cell, the transistor is formed so that its source and drain are stacked in the vertical direction in a region where a bit line and a word line intersect each other. Further, a capacitor is stacked above the transistor.

公开(公告)号：US09806200B2

公开(公告)日：2017-10-31

申请号：US15077029

申请日：2016-03-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Tetsuhiro Tanaka ,  Masayuki Kimura ,  Ryo Tokumaru ,  Daisuke Matsubayashi ,  Yasumasa Yamane

IPC: H01L29/786 ,  H01L29/772 ,  H01L29/24 ,  H01L27/32 ,  H01L27/12 ,  G02F1/1368

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/78603

Abstract: A semiconductor device including a miniaturized transistor is provided. The semiconductor device includes a first insulator, a second insulator, a semiconductor, and a conductor. The semiconductor is over the first insulator. The second insulator is over the semiconductor. The conductor is over the second insulator. The semiconductor includes a first region, a second region, and a third region. The first region is a region where the semiconductor overlaps with the conductor. Each of the second region and the third region is a region where the semiconductor does not overlap with the conductor. The second region and the third region each have a region with a spinel crystal structure.