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    Monolithically isled back contact back junction solar cells
    51.
    发明授权
    Monolithically isled back contact back junction solar cells 有权
    单片背面接触背面太阳能电池

    公开(公告)号：US09515217B2

    公开(公告)日：2016-12-06

    申请号：US14179526

    申请日：2014-02-12

    Applicant: Solexel, Inc.

    Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  Michael Wingert

    IPC: H01L31/18 ,  H01L31/0224 ,  H01L27/142 ,  H01L31/05

    CPC classification number: H01L31/18 ,  H01L27/1421 ,  H01L31/02245 ,  H01L31/0516 ,  Y02E10/50

    Abstract: According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles.

    Abstract translation: 根据所公开的主题的一个方面，提供了一种形成一体式背面接触背面太阳能电池的方法。 发射极和基极接触区形成在具有光接收前侧和与前侧相对的背面的半导体晶片的背面。 第一层接触金属化形成在晶片背面，并且电绝缘底板附着到半导体晶片背面。 在将半导体晶片图案化成多个电隔离岛的半导体晶片中形成隔离沟槽，并且半导体晶片变薄。 在电绝缘背板上形成电连接多个岛的金属化结构。

    Electrical parametric testing for back contact semiconductor solar cells
    52.
    发明授权
    Electrical parametric testing for back contact semiconductor solar cells 有权
    背接触半导体太阳能电池的电气参数测试

    公开(公告)号：US09461582B2

    公开(公告)日：2016-10-04

    申请号：US14479540

    申请日：2014-09-08

    Applicant: Solexel, Inc.

    Inventor： Swaroop Kommera ,  Pawan Kapur ,  Mehrdad M. Moslehi

    IPC: H01L31/068 ,  H02S50/10 ,  H01L21/66 ,  H01L31/0224 ,  G01R31/40 ,  G01R27/02

    CPC classification number: H02S50/10 ,  G01R27/02 ,  H01L22/14 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/0682 ,  H02S50/00 ,  Y02E10/547

    Abstract: Methods and structures for extracting at least one electric parametric value from a back contact solar cell. According to one embodiment, a first layer of electrically conductive metal having an interdigitated pattern of base electrodes and emitter electrodes is formed on the backside surface of a semiconductor solar cell substrate. An electrically insulating layer is formed on the first layer of electrically conductive metal providing electrical isolation between the first layer of electrically conductive metal and a second layer of electrically conductive metal. Vias are formed in the electrically insulating layer providing access to the first layer of electrically conductive metal. A second electrically conductive metallization layer is formed on the electrically insulating layer and contacts the first electrically conductive metal layer through the vias. An electrical parametric value is extracted from the solar cell by probing the electrically conductive metallization layer with an electrical current or voltage.

    Abstract translation: 从背面接触太阳能电池提取至少一个电参数值的方法和结构。 根据一个实施例，在半导体太阳能电池基板的背面形成有具有基准电极和发射极电极的交错图案的第一导电金属层。 在第一导电金属层上形成电绝缘层，在第一导电金属层和第二导电金属层之间提供电隔离。 在电绝缘层中形成通孔，提供对第一层导电金属的访问。 第二导电金属化层形成在电绝缘层上，并通过通孔与第一导电金属层接触。 通过用电流或电压探测导电金属化层，从太阳能电池提取电参数值。

    TRENCH ISOLATION FOR MONOLITHICALLY ISLED SOLAR PHOTOVOLTAIC CELLS AND MODULES
    53.
    发明申请
    TRENCH ISOLATION FOR MONOLITHICALLY ISLED SOLAR PHOTOVOLTAIC CELLS AND MODULES 有权
    单片隔离太阳能光伏电池和模块的热分离

    公开(公告)号：US20160190366A1

    公开(公告)日：2016-06-30

    申请号：US14846537

    申请日：2015-09-04

    Applicant: Solexel, Inc.

    Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Heather Deshazer ,  Pawan Kapur

    IPC: H01L31/0224

    CPC classification number: H01L31/022458 ,  H01L27/1421 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Fabrication methods and structures are provided for the formation of monolithically isled back contact back junction solar cells. In one embodiment, base and emitter contact metallization is formed on the backside of a back contact back junction solar cell substrate. A trench stop layer is formed on the backside of a back contact back junction solar cell substrate and is electrically isolated from the base and emitter contact metallization. The trench stop layer has a pattern for forming a plurality semiconductor regions. An electrically insulating layer is formed on the base and emitter contact metallization and the trench stop layer. A trench isolation pattern is formed through the back contact back junction solar cell substrate to the trench stop layer which partitions the semiconductor layer into a plurality of solar cell semiconductor regions on the electrically insulating layer.

    Abstract translation: 提供制造方法和结构用于形成单片背面接触背面太阳能电池。 在一个实施例中，在背接触太阳能电池基板的背面形成基极和发射极接触金属化。 在背面接合太阳能电池基板的背面形成沟槽阻挡层，并且与基极和发射极接触金属化电隔离。 沟槽停止层具有用于形成多个半导体区域的图案。 在基极和发射极接触金属化和沟槽停止层上形成电绝缘层。 通过背面接合太阳能电池基板形成沟槽隔离层，其将半导体层分隔成电绝缘层上的多个太阳能电池半导体区域。

    STRUCTURES AND METHODS FOR HIGH-EFFICIENCY PYRAMIDAL THREE-DIMENSIONAL SOLAR CELLS
    55.
    发明申请
    STRUCTURES AND METHODS FOR HIGH-EFFICIENCY PYRAMIDAL THREE-DIMENSIONAL SOLAR CELLS 有权
    高效率三维太阳能电池的结构和方法

    公开(公告)号：US20150325714A1

    公开(公告)日：2015-11-12

    申请号：US14601123

    申请日：2015-01-20

    Applicant: Solexel, Inc.

    Inventor： Pawan Kapur ,  Mehrdad M. Moslehi

    IPC: H01L31/0236 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/0445

    CPC classification number: H01L31/022425 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0445 ,  H01L31/068 ,  H01L31/182 ,  H01L31/1896 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: The present disclosure enables high-volume cost effective production of three-dimensional thin film solar cell (3-D TFSC) substrates. First, the present disclosure discloses pyramid-like unit cell structure 16 and 50 which enable epitaxial growth through their open pyramidal structure. The present disclosure than gives four 3-D TFSC embodiments 70, 82, 100, and 110 which may combined as necessary. A basic 3-D TFSC having a substrate, emitter, oxidation on the emitter, front and back metal contacts allows simple processing. Other embodiments disclose a selective emitter, selective backside metal contact, and front-side SiN ARC layers. Several processing methods including process flows 150, 200, 250, 300, and 350 enable production of these 3-D TFSC. Further, the present disclosure enables higher throughput through the use of dual sided template 400. By processing the substrate in the template, the present disclosure increases yield and reduces processing steps.

    Abstract translation: 本公开使得能够大量成本有效地生产三维薄膜太阳能电池（3-D TFSC）基板。 首先，本公开公开了金字塔形单元结构16和50，其能够通过其开放金字塔形结构进行外延生长。 本公开不是给出可以根据需要组合的四个三维TFSC实施例70,82,100和110。 在发射器，前后金属触点上具有衬底，发射极，氧化的基本3-D TFSC允许简单的处理。 其他实施例公开了选择性发射极，选择性背侧金属接触和前侧SiN ARC层。 包括工艺流程150,200,250,300和350的几种处理方法使得能够生产这些3-D TFSC。 此外，本公开通过使用双面模板400可实现更高的生产量。通过在模板中处理衬底，本公开增加了产量并降低了处理步骤。

    AMORPHOUS SILICON PASSIVATED CONTACTS FOR BACK CONTACT BACK JUNCTION SOLAR CELLS
    56.
    发明申请
    AMORPHOUS SILICON PASSIVATED CONTACTS FOR BACK CONTACT BACK JUNCTION SOLAR CELLS 审中-公开
    用于背面接触反射式太阳能电池的无定形硅被动接触件

    公开(公告)号：US20150236175A1

    公开(公告)日：2015-08-20

    申请号：US14582090

    申请日：2014-12-23

    Applicant: Solexel, Inc.

    Inventor： Pawan Kapur ,  Heather Deshazer ,  Mohammed Islam ,  Mehrdad M. Moslehi

    IPC: H01L31/0224 ,  H01L31/02 ,  H01L31/0216

    CPC classification number: H01L31/022441 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Passivated contact structures and fabrication methods for back contact back junction solar cells are provided. According to one example embodiment, a back contact back junction photovoltaic solar cell is described that has a semiconductor light absorbing layer having a front side and a backside having base regions and emitter regions. An amorphous silicon passivating layer is positioned on the base regions. A first level base and emitter metallization contacts the emitter regions and the amorphous silicon passivating layer on the base regions. An electrically insulating backplane is positioned on the first level base and emitter metallization. A second level metallization contacts the first level base and emitter metallization through conductive vias in the electrically insulating backplane.

    Abstract translation: 提供了背接触太阳能电池的钝化接触结构和制造方法。 根据一个示例性实施例，描述了具有正面和背面具有基极区域和发射极区域的半导体光吸收层的背面接合光伏太阳能电池。 非晶硅钝化层位于基极区上。 第一级基极和发射极金属化接触基极区上的发射极区域和非晶硅钝化层。 电绝缘背板位于第一级基底和发射极金属化上。 第二级金属化通过电绝缘背板中的导电通孔接触第一级基极和发射极金属化。

    TRENCH ISOLATION FOR MONOLITHICALLY ISLED SOLAR PHOTOVOLTAIC CELLS AND MODULES
    57.
    发明申请
    TRENCH ISOLATION FOR MONOLITHICALLY ISLED SOLAR PHOTOVOLTAIC CELLS AND MODULES 有权
    单片隔离太阳能光伏电池和模块的热分离

    公开(公告)号：US20150136227A1

    公开(公告)日：2015-05-21

    申请号：US14601202

    申请日：2015-01-20

    Applicant: Solexel, Inc.

    Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Heather Deshazer ,  Pawan Kapur

    IPC: H01L31/0224 ,  H01L31/18

    CPC classification number: H01L31/022458 ,  H01L27/1421 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Fabrication methods and structures are provided for the formation of monolithically isled back contact back junction solar cells. In one embodiment, base and emitter contact metallization is formed on the backside of a back contact back junction solar cell substrate. A trench stop layer is formed on the backside of a back contact back junction solar cell substrate and which is electrically isolated from the base and emitter contact metallization. The trench stop layer has a pattern for forming a plurality semiconductor regions. An electrically insulating layer is formed on the base and emitter contact metallization and the etch stop layer. And a trench isolation pattern is formed through the back contact back junction solar cell substrate to the trench stop layer which partitions semiconductor layer into a plurality of solar cell semiconductor regions on the electrically insulating layer.

    Abstract translation: 提供制造方法和结构用于形成单片背面接触背面太阳能电池。 在一个实施例中，在背接触太阳能电池基板的背面形成基极和发射极接触金属化。 在背面接合太阳能电池基板的背面形成沟槽阻挡层，并且与基底和发射极接触金属化电隔离。 沟槽停止层具有用于形成多个半导体区域的图案。 在基极和发射极接触金属化层和蚀刻停止层上形成电绝缘层。 并且通过背接触太阳能电池基板形成沟槽隔离图案，其将半导体层分隔成电绝缘层上的多个太阳能电池半导体区域的沟槽停止层。

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