公开(公告)号：US07070877B2

公开(公告)日：2006-07-04

申请号：US10405895

申请日：2003-04-02

申请人： Yoshikazu Morita ,  Shinichi Kamoshida ,  Takeshi Shimizu ,  Tsutomu Miyano ,  Keiji Izumi ,  Yuichi Yagami ,  Tsuyoshi Takahashi ,  Yoshiaki Kajikawa ,  Kouta Kodama

发明人： Yoshikazu Morita ,  Shinichi Kamoshida ,  Takeshi Shimizu ,  Tsutomu Miyano ,  Keiji Izumi ,  Yuichi Yagami ,  Tsuyoshi Takahashi ,  Yoshiaki Kajikawa ,  Kouta Kodama

IPC分类号： H01M2/00

CPC分类号： H01M8/021 ,  C23G1/081 ,  C25F3/06 ,  Y10T428/12993

摘要： A stainless steel separator, which is good of corrosion-resistance and low of contact-resistance, is proposed for a fuel cell. Its surface faced to a fuel electrode is pickled, which the other surface faced to an oxidizing electrode is roughened by electrolytic etching or the like. The roughening treatment may be performed before or after pickling and passivation. The roughened surface of the stainless steel separator without pickling or passivation may be faced to the oxidizing electrode.

公开(公告)号：US20050218469A1

公开(公告)日：2005-10-06

申请号：US11086998

申请日：2005-03-23

申请人： Tsuyoshi Takahashi ,  Katsuya Okabe

发明人： Tsuyoshi Takahashi ,  Katsuya Okabe

IPC分类号： H01L27/14 ,  H01L31/105

CPC分类号： H01L31/105 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636

摘要： Disclosed is an optical semiconductor integrated circuit device, in which an opening portion is formed in an insulating layer, which is formed in a light receiving region of a photodiode, and the insulating layer is covered with a refractory metal layer as a light shadowing film. As result, since the refractory metal layer has an excellent step coverage, the refractory metal layer is not broken by a step of the opening portion located on an upper plane of a region where the photodiode is formed. Accordingly, a problem that the light shadowing film is broken when Al is used as the light shadowing film is solved.

摘要翻译： 公开了一种光学半导体集成电路器件，其中在绝缘层中形成开口部分，该绝缘层形成在光电二极管的光接收区域中，绝缘层被作为遮光膜的难熔金属层覆盖。 结果，由于难熔金属层具有优异的台阶覆盖率，难熔金属层不会被位于形成光电二极管的区域的上平面上的开口部分的台阶破坏。 因此，解决了当使用Al作为遮光膜时遮光膜破裂的问题。

公开(公告)号：US06927112B2

公开(公告)日：2005-08-09

申请号：US10310949

申请日：2002-12-06

申请人： Masanobu Igeta ,  Shintaro Aoyama ,  Hiroshi Shinriki ,  Tsuyoshi Takahashi

发明人： Masanobu Igeta ,  Shintaro Aoyama ,  Hiroshi Shinriki ,  Tsuyoshi Takahashi

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/8238

CPC分类号： H01L21/28185 ,  C23C16/34 ,  C23C16/405 ,  C23C16/482 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/316 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L21/67017 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method of nitriding an insulation film, includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film.

摘要翻译： 对绝缘膜进行氮化的方法包括以下步骤：通过在绝缘膜的表面供给氮自由基，通过高频等离子体形成氮自由基，并在其中含有氧的绝缘膜的表面发生氮化。

公开(公告)号：US06914356B2

公开(公告)日：2005-07-05

申请号：US10302867

申请日：2002-11-25

申请人： Akihiro Yamamura ,  Tetsunao Takaki ,  Tsuyoshi Takahashi ,  Akifumi Miyake ,  Akira Izawa ,  Hiromu Nonoguchi ,  Kazuo Matsunaga ,  Hiroyuki Akita

发明人： Akihiro Yamamura ,  Tetsunao Takaki ,  Tsuyoshi Takahashi ,  Akifumi Miyake ,  Akira Izawa ,  Hiromu Nonoguchi ,  Kazuo Matsunaga ,  Hiroyuki Akita

IPC分类号： H02K3/04 ,  H02K3/50 ,  H02K3/52 ,  H02K15/04 ,  H02K11/00

CPC分类号： H02K3/50 ,  H02K3/522 ,  H02K2203/09

摘要： A conductive member includes a strip conductive portion 24 and an arm portion 22 integral with the strip conductive portion 24 and extending from a side end portion 24a of the strip conductive portion 24 to be almost parallel in a longitudinal direction, the arm portion being bent in a direction of plate thickness for the strip conductive portion 24.

摘要翻译： 导电部件包括带状导电部分24和与带状导电部分24成一体并且从带状导电部分24的侧端部分24a延伸到大致平行于纵向方向的臂部分22，臂部分弯曲 在带状导电部24的板厚方向上。

公开(公告)号：US20050059259A1

公开(公告)日：2005-03-17

申请号：US10662875

申请日：2003-09-16

申请人： David O'Meara ,  Cory Wajda ,  Tsuyoshi Takahashi ,  Alessandro Callegari ,  Kristen Scheer ,  Sufi Zafar ,  Paul Jamison

发明人： David O'Meara ,  Cory Wajda ,  Tsuyoshi Takahashi ,  Alessandro Callegari ,  Kristen Scheer ,  Sufi Zafar ,  Paul Jamison

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  H01L21/02181 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31658 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method is provided for forming a microstructure with an interfacial oxide layer by using a diffusion filter layer to control the oxidation properties of a substrate associated with formation of a high-k layer into the microstructure. The diffusion filter layer controls the oxidation of the surface. The interfacial oxide layer can be formed during an oxidation process that is carried out following deposition of a high-k layer onto the diffusion filter layer, or during deposition of a high-k layer onto the diffusion filter layer.

摘要翻译： 提供了一种用于通过使用扩散过滤层来形成具有界面氧化物层的微观结构以控制与形成高k层的微结构相关联的衬底的氧化性能的方法。 扩散过滤层控制表面的氧化。 可以在氧化过程中形成界面氧化物层，该氧化过程在沉积高k层到扩散过滤层上之后或在沉积高k层到扩散过滤层上之后进行。

公开(公告)号：US06771449B1

公开(公告)日：2004-08-03

申请号：US09694372

申请日：2000-10-24

申请人： Tatsuya Ito ,  Tadashi Okumura ,  Tsuyoshi Takahashi ,  Masatoshi Ishikawa ,  Yuji Nishimura ,  Tetsuo Yuki

发明人： Tatsuya Ito ,  Tadashi Okumura ,  Tsuyoshi Takahashi ,  Masatoshi Ishikawa ,  Yuji Nishimura ,  Tetsuo Yuki

IPC分类号： G11B2102

CPC分类号： G01P15/0891 ,  G11B5/54 ,  G11B19/04 ,  G11B21/12

摘要： A falling sensor is provided, which detects a falling of a magnetic disk drive or a information processing device installed with the magnetic disk drive and which is effective for avoiding physical damage of magnetic heads and magnetic disk media. The magnetic disk drive or the information processing device, include an unload mechanism moving or evacuating the magnetic head from a surface of the magnetic disk media, and a falling sensor comprising a conductive flexible beam or member having a compatible function, a conductive weight supported by these beams and a conductive wall arranged to be made in contact or non-contact with the weight. The sensor can detect a falling of the magnetic disk drive or the information processing device, which is typically a notebook personal computer installed with the magnetic disk drive, and evacuate the magnetic head by the unload mechanism. The conductive wall can be formed of a tubular member.

摘要翻译： 提供了一种下降的传感器，其检测磁盘驱动器或安装有磁盘驱动器的信息处理装置的下降，并且其有效地避免磁头和磁盘介质的物理损坏。 磁盘驱动器或信息处理装置包括从磁盘介质的表面移动或抽出磁头的卸载机构，以及包括具有兼容功能的导电柔性梁或构件的下落传感器，由 这些梁和导电壁布置成与重物接触或不接触。 该传感器可以检测磁盘驱动器或信息处理装置的下落，该装置通常是安装有磁盘驱动器的笔记本个人计算机，并通过卸载机构排出磁头。 导电壁可以由管状构件形成。

公开(公告)号：US06469866B1

公开(公告)日：2002-10-22

申请号：US09504043

申请日：2000-02-14

申请人： Katsutoshi Nii ,  Masaru Muranishi ,  Shozo Saegusa ,  Tsuyoshi Takahashi ,  Kenji Tomida ,  Takashi Matsuki ,  Yuuichi Yanagase ,  Mitsuyuki Tsuyuki ,  Shinobu Yoshida ,  Hiroshi Nishida ,  Kazuhiko Kawakami

发明人： Katsutoshi Nii ,  Masaru Muranishi ,  Shozo Saegusa ,  Tsuyoshi Takahashi ,  Kenji Tomida ,  Takashi Matsuki ,  Yuuichi Yanagase ,  Mitsuyuki Tsuyuki ,  Shinobu Yoshida ,  Hiroshi Nishida ,  Kazuhiko Kawakami

IPC分类号： G11B1920

CPC分类号： H02K7/09 ,  F16C17/028 ,  F16C17/045 ,  F16C17/047 ,  F16C17/10 ,  F16C17/26 ,  F16C33/1035 ,  F16C33/107 ,  F16C2370/12 ,  G11B19/2009 ,  G11B19/2036 ,  H02K7/085

摘要： A rotary shaft is rotatably supported by a hydrodynamic fluid radial bearing and a hydrodynamic fluid thrust bearing which are excellent in shock resistance, an bearing arrangement in which vibration in a translation mode of the shaft, among vibration components caused by unbalance force exerted to the rotary shaft, is supported by the radial bearing, and vibration in conical mode is supported by the thrust bearing, magnetic fluid is used as lubrication oil, and a permanent magnet is located between the radial bearing and the thrust bearing so as to apply a magnetic attracting force between the rotary shaft and the thrust bearing so as to carry out axial positioning in order to use the magnetic disc device in an arbitrary attaching posture. With this arrangement, the magnetic disc device using such a bearing arrangement can enhance portability, thinning and antishock ability, and reduce noise and power consumption, thereby it is possible to provide a note-type personal computer with a high degree of reliability.

摘要翻译： 旋转轴由能够抗冲击性优异的流体动力流体径向轴承和流体动力学流体推力轴承可旋转地支撑，轴承装置，其中轴的平移模式中的振动由施加到旋转体的不平衡力引起的振动分量之中 轴由径向轴承支撑，锥形模式的振动由推力轴承支撑，磁流体用作润滑油，永磁体位于径向轴承和推力轴承之间，以便施加磁吸力 旋转轴和推力轴承之间的力，以便执行轴向定位，以便以任意的安装姿势使用磁盘装置。 通过这种布置，使用这种轴承装置的磁盘装置可以提高便携性，变薄和抗震能力，并且降低噪声和功耗，从而可以提供具有高度可靠性的笔记型个人计算机。

公开(公告)号：US06404021B1

公开(公告)日：2002-06-11

申请号：US09023712

申请日：1998-02-13

申请人： Masato Koizumi ,  Kazuya Okubo ,  Tsuyoshi Takahashi ,  Tsuyoshi Hashimoto ,  Kimihiro Matsuse

发明人： Masato Koizumi ,  Kazuya Okubo ,  Tsuyoshi Takahashi ,  Tsuyoshi Hashimoto ,  Kimihiro Matsuse

IPC分类号： H01L2976

CPC分类号： H01L29/4933 ,  H01L21/28061 ,  H01L21/76889 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film might not be formed on the poly-crystal silicon layer, and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.

摘要翻译： 形成多层结构的栅电极的方法包括：向成膜器件提供多晶硅膜形成处理气体和P型杂质的步骤，以形成掺杂有多晶硅层的多晶硅层 在栅极膜靶的表面上的P型杂质可能不会在多晶硅层上形成保持成膜装置中的处理对象以防止形成氧化膜的步骤， 用于形成钨硅化物膜的处理气体和P型杂质成膜装置，以在不形成氧化膜的多晶硅层上形成掺有P型杂质的杂质的硅化钨层 。

公开(公告)号：US6110772A

公开(公告)日：2000-08-29

申请号：US16512

申请日：1998-01-30

申请人： Tadayoshi Takada ,  Tsuyoshi Takahashi ,  Yasunari Tagami ,  Hirotsugu Hata ,  Satoru Kaneko

发明人： Tadayoshi Takada ,  Tsuyoshi Takahashi ,  Yasunari Tagami ,  Hirotsugu Hata ,  Satoru Kaneko

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/265 ,  H01L21/822 ,  H01L27/06 ,  H01L21/70

CPC分类号： H01L27/0635 ,  H01L28/20 ,  H01L28/40

摘要： A semiconductor IC including a resistance element on a circuit substrate. The resistance element includes a resistance layer formed on an insulating layer. The resistance layer is formed using a Si layer obtained by forming an a-Si layer, doping the a-Si layer with impurities, and heating the doped a-Si layer to diffuse the impurities while substantially preserving the fineness of the a-Si layer surface. Preferably, a SiN layer is provided lying beneath the resistance layer. A capacitor may be integrated on the same circuit substrate where the resistance element is formed. In this case, a lower electrode, a SiN dielectric layer, and an upper electrode are formed in this order to constitute a capacitor. The SiN dielectric layer of the capacitor is formed extending from a capacitor formation region to another region, so that the resistance layer of the resistance element is formed on the extending SiN dielectric layer. The lower and upper electrodes of the capacitor may be formed using an a-Si layer, similar to the resistance layer.

摘要翻译： 一种在电路基板上包括电阻元件的半导体IC。 电阻元件包括形成在绝缘层上的电阻层。 电阻层使用通过形成a-Si层获得的Si层，用杂质掺杂a-Si层并加热掺杂的a-Si层以扩散杂质而形成，同时基本上保持a-Si层的细度 表面。 优选地，设置在电阻层下方的SiN层。 电容器可以集成在形成电阻元件的同一电路基板上。 在这种情况下，依次形成下电极，SiN电介质层和上电极，构成电容器。 电容器的SiN介质层形成为从电容器形成区域延伸到另一区域，使得电阻元件的电阻层形成在延伸的SiN电介质层上。 可以使用类似于电阻层的a-Si层来形成电容器的下电极和上电极。

公开(公告)号：US6078454A

公开(公告)日：2000-06-20

申请号：US573319

申请日：1995-12-15

申请人： Tsuyoshi Takahashi ,  Toshihiko Matsuda ,  Takehiko Tsuboi ,  Koji Ikenoya ,  Yukio Abe ,  Koji Ishii ,  Tomoo Furukawa ,  Hiroyuki Kobayashi

发明人： Tsuyoshi Takahashi ,  Toshihiko Matsuda ,  Takehiko Tsuboi ,  Koji Ikenoya ,  Yukio Abe ,  Koji Ishii ,  Tomoo Furukawa ,  Hiroyuki Kobayashi

IPC分类号： G11B5/09 ,  G11B5/00 ,  G11B5/012 ,  G11B5/03 ,  G11B5/39 ,  G11B5/48 ,  G11B5/56 ,  G11B5/596 ,  G11B21/10 ,  G11B33/14

CPC分类号： G11B5/012 ,  G11B21/106 ,  G11B5/56 ,  G11B2005/0018 ,  G11B33/14 ,  G11B5/4886

摘要： When a combination head is on-tracked to an arbitrary cylinder position, a head position controller corrects a head position so as to eliminate an offset amount derived from an offset table. A bias current setting circuit obtains a current set value corresponding to an offset correction amount from a bias current table and supplies the bias current according to the current set value to an MR head. As kinds of offsets, there are a yaw angle offset, a thermal offset, and a core deviation offset.

摘要翻译： 当组合磁头跟踪到任意气缸位置时，磁头位置控制器校正磁头位置，以消除从偏移表导出的偏移量。 偏置电流设定电路从偏置电流表获得与偏移校正量对应的电流设定值，并根据当前设定值将偏置电流提供给MR磁头。 作为偏移类型，存在偏航角偏移，热偏移和磁心偏移偏移。