公开(公告)号：US08154031B2

公开(公告)日：2012-04-10

申请号：US11885204

申请日：2006-02-10

申请人： Stefan Grötsch ,  Berthold Hahn ,  Stefan Illek ,  Wolfgang Schnabel

发明人： Stefan Grötsch ,  Berthold Hahn ,  Stefan Illek ,  Wolfgang Schnabel

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  F21K9/00 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/48137 ,  H01L2924/0102 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041

摘要： A module comprising a regular arrangement of individual radiation-emitting semiconductor bodies (1) which are applied on a mounting area (6) of a carrier (2), wherein a wire connection is fitted between two adjacent radiation-emitting semiconductor bodies (1) on a top side, opposite to the mounting area (6), of the two radiation-emitting semiconductor bodies (1).

摘要翻译： 一种模块，包括施加在载体（2）的安装区域（6）上的各个辐射发射半导体体（1）的规则排列，其中，线连接装配在两个相邻的发射辐射半导体体（1）之间， 在两个辐射发射半导体本体（1）的顶侧上与安装区域（6）相对。

公开(公告)号：US20110175238A1

公开(公告)日：2011-07-21

申请号：US12746096

申请日：2008-12-08

申请人： Stefan Illek

发明人： Stefan Illek

IPC分类号： H01L23/12 ,  H01L21/50

CPC分类号： H01L24/83 ,  H01L21/6835 ,  H01L24/97 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2221/68377 ,  H01L2224/83001 ,  H01L2224/838 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10158 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/19043 ,  H01L2224/83 ,  H01L2924/01031 ,  H01L2924/3512 ,  H01L2924/00

摘要： A method for producing a plurality of semiconductor chips is specified. A plurality of semiconductor bodies is provided on a substrate, wherein the semiconductor bodies are spaced apart from one another by interspaces. A structured carrier is provided, having a plurality of elevations. The structured carrier is positioned relative to the substrate in such a way that the elevations of the structured carrier extend into the interspaces between the semiconductor bodies A mechanically stable assemblage is produced, comprising the substrate and the structured carrier. The assemblage is singulated into a plurality of semiconductor chips.

摘要翻译： 规定了制造多个半导体芯片的方法。 多个半导体本体设置在基板上，其中半导体主体通过间隙彼此间隔开。 提供具有多个高度的结构化载体。 结构化载体相对于基底定位成使得结构化载体的隆起延伸到半导体体之间的间隙中。产生包括基底和结构化载体的机械稳定的组合。 该组合被分成多个半导体芯片。

公开(公告)号：US07723730B2

公开(公告)日：2010-05-25

申请号：US10999854

申请日：2004-11-29

申请人： Stefan Groetsch ,  Stefan Illek ,  Andreas Ploessl ,  Berthold Hahn

发明人： Stefan Groetsch ,  Stefan Illek ,  Andreas Ploessl ,  Berthold Hahn

IPC分类号： H01L33/00

CPC分类号： H01L33/641 ,  H01L21/6835 ,  H01L23/15 ,  H01L23/3677 ,  H01L24/97 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/62 ,  H01L33/647 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2224/83048 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00

摘要： A carrier layer (1) for a semiconductor layer sequence comprising an electrical insulation layer (2) containing AlN or a ceramic. Furthermore a method for producing semiconductor chips is described.

摘要翻译： 一种用于半导体层序列的载体层（1），包括含有AlN或陶瓷的电绝缘层（2）。 另外，对半导体芯片的制造方法进行说明。

公开(公告)号：US20100117111A1

公开(公告)日：2010-05-13

申请号：US12597682

申请日：2008-04-25

申请人： Stefan Illek ,  Andreas Ploessl ,  Alexander Heindl ,  Patrick Rode ,  Dieter Eissler

发明人： Stefan Illek ,  Andreas Ploessl ,  Alexander Heindl ,  Patrick Rode ,  Dieter Eissler

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/20 ,  H01L33/46 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed.

摘要翻译： 具有半导体本体的光电子部件包括适于产生辐射的有源区和布置在半导体本体上的两个电触头。 触头电连接到有源区。 触点各自具有面向远离半导体主体的连接面。 接触面位于部件的连接侧，并且与连接侧不同的部件的一侧被镜面涂覆。 还公开了用于制造这种多个部件的方法。

公开(公告)号：US20090302429A1

公开(公告)日：2009-12-10

申请号：US12301566

申请日：2007-05-16

申请人： Andreas Plössl ,  Stefan Illek

发明人： Andreas Plössl ,  Stefan Illek

IPC分类号： H01L23/52 ,  H01L21/50

CPC分类号： H05K3/321 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/20 ,  H01L2224/26145 ,  H01L2224/27013 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10155 ,  H01L2924/10158 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/15788 ,  H01L2924/19043 ,  H05K2201/0373 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A device comprising a first component (5) having a first surface (6), a second component (8) having a second surface (9) and a connection layer (7) between the first surface (6) of the first component (5) and the second surface (9) of the second component (8), wherein the connection layer (7) comprises an electrically insulating adhesive and there is an electrically conductive contact between the first surface (6) of the first component (5) and the second surface (9) of the second component (8).

摘要翻译： 一种装置，包括具有第一表面（6）的第一部件（5），具有第二表面（9）的第二部件（8）和在第一部件（5）的第一表面（6）之间的连接层 ）和第二部件（8）的第二表面（9），其中连接层（7）包括电绝缘粘合剂，并且在第一部件（5）的第一表面（6）和 第二部件（8）的第二表面（9）。

公开(公告)号：US07598529B2

公开(公告)日：2009-10-06

申请号：US11393533

申请日：2006-03-30

申请人： Andreas Ploessl ,  Stefan Illek ,  Vincent Grolier

发明人： Andreas Ploessl ,  Stefan Illek ,  Vincent Grolier

IPC分类号： H01L29/201

CPC分类号： H01L24/83 ,  H01L24/29 ,  H01L24/33 ,  H01L33/62 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/157 ,  H01L2924/1579 ,  H01L2924/3025 ,  H01L2924/01083 ,  H01L2924/00014

摘要： A semiconductor chip (1), to which a layer sequence (2) intended for the production of a soldered connection has been applied. The layer sequence (2) comprises a solder layer (15) and an oxidation prevention layer (17), which follows the solder layer (15) as seen from the semiconductor chip (1). A barrier layer (16) is included between the solder layer (15) and the oxidation prevention layer (17). This prevents a constituent of the solder layer (15) from diffusing through the oxidation prevention layer (17) prior to the soldering operation, where it would effect oxidation that is disadvantageous for producing a soldered connection.

摘要翻译： 已经应用了用于生产焊接连接的层序列（2）的半导体芯片（1）。 层序列（2）包括如从半导体芯片（1）所见的跟随焊料层（15）的焊料层（15）和防氧化层（17）。 阻焊层（16）包括在焊料层（15）和防氧化层（17）之间。 这防止焊接层（15）的组成部分在焊接操作之前通过氧​​化防止层（17）扩散，在那里它将产生不利于生产焊接连接的氧化。

公开(公告)号：US07547921B2

公开(公告)日：2009-06-16

申请号：US11292389

申请日：2005-11-30

申请人： Stefan Illek ,  Klaus Streubel ,  Walter Wegleiter ,  Andreas Ploessl ,  Ralph Wirth

发明人： Stefan Illek ,  Klaus Streubel ,  Walter Wegleiter ,  Andreas Ploessl ,  Ralph Wirth

IPC分类号： H01L27/15

CPC分类号： H01L33/405 ,  H01L33/08 ,  H01L33/20 ,  H01L33/382 ,  H01L33/46

摘要： An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.

公开(公告)号：US20070181891A1

公开(公告)日：2007-08-09

申请号：US11731914

申请日：2007-04-02

申请人： Dominik Eisert ,  Stefan Illek ,  Wolfgang Schmid

发明人： Dominik Eisert ,  Stefan Illek ,  Wolfgang Schmid

IPC分类号： H01L31/12

CPC分类号： H01L33/20 ,  H01L23/3677 ,  H01L24/29 ,  H01L24/83 ,  H01L24/95 ,  H01L2224/29014 ,  H01L2224/29124 ,  H01L2224/29164 ,  H01L2224/29169 ,  H01L2224/83203 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

摘要： A semiconductor component having a light-emitting semiconductor layer or a light-emitting semiconductor element, two contact locations and a vertically or horizontally patterned carrier substrate, and a method for producing a semiconductor component are disclosed for the purpose of reducing or compensating for the thermal stresses in the component. The thermal stresses arise as a result of temperature changes during processing and during operation and on account of the different expansion coefficients of the semiconductor and carrier substrate. The carrier substrate is patterned in such a way that the thermal stresses are reduced or compensated for sufficiently to ensure that the component does not fail.

摘要翻译： 公开了具有发光半导体层或发光半导体元件，两个接触位置和垂直或水平图案化载体衬底的半导体部件以及用于制造半导体部件的方法，用于减少或补偿热 组件中的压力。 热应力由于处理过程中和工作期间的温度变化以及由于半导体和载体衬底的不同膨胀系数而产生。 载体基板被图案化，使得热应力被减少或补偿以充分确保部件不失败。

公开(公告)号：US07109527B2

公开(公告)日：2006-09-19

申请号：US10344308

申请日：2001-08-08

申请人： Stefan Illek ,  Andreas Plössl ,  Klaus Streubel ,  Walter Wegleiter ,  Ralph Wirth

发明人： Stefan Illek ,  Andreas Plössl ,  Klaus Streubel ,  Walter Wegleiter ,  Ralph Wirth

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/10 ,  H01L33/30 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor chip, particularly a radiation-emitting semiconductor chip, comprises an active thin-film layer in which a photon-emitting zone is formed, and a carrier substrate for the thin-film layer is arranged at a side of the thin-film layer faces away from the emission direction and is connected to it. At least one cavity via which a plurality of mesas is fashioned at the boundary between carrier substrate and thin-film layer is fashioned in the active thin-film layer proceeding from the carrier substrate.

摘要翻译： 半导体芯片，特别是辐射发射半导体芯片，包括其中形成有光子发射区的有源薄膜层，并且用于薄膜层的载体衬底被布置在薄膜层的一侧 面向远离发射方向并连接到它。 在载体衬底和活性薄膜层之间形成至少一个通过其在载体衬底和薄膜层之间的边界处形成多个台面的空腔。

公开(公告)号：US20060180820A1

公开(公告)日：2006-08-17

申请号：US11403006

申请日：2006-04-12

申请人： Stefan Illek ,  Andreas Plossl ,  Klaus Streubel ,  Walter Wegleiter ,  Ralph Wirth

发明人： Stefan Illek ,  Andreas Plossl ,  Klaus Streubel ,  Walter Wegleiter ,  Ralph Wirth

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/10 ,  H01L33/30 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor chip, particularly a radiation-emitting semiconductor chip, comprises an active thin-film layer in which a photon-emitting zone is formed, and a carrier substrate for the thin-film layer is arranged at a side of the thin-film layer faces away from the emission direction and is connected to it. At least one cavity via which a plurality of mesas is fashioned at the boundary between carrier substrate and thin-film layer is fashioned in the active thin-film layer proceeding from the carrier substrate.

摘要翻译： 半导体芯片，特别是辐射发射半导体芯片，包括其中形成有光子发射区的有源薄膜层，并且用于薄膜层的载体衬底被布置在薄膜层的一侧 面向远离发射方向并连接到它。 在载体衬底和活性薄膜层之间形成至少一个通过其在载体衬底和薄膜层之间的边界处形成多个台面的空腔。