公开(公告)号：US20090317939A1

公开(公告)日：2009-12-24

申请号：US12110295

申请日：2008-04-26

Applicant: Yu Huang ,  Bing-Joe Hwang ,  Hsuan-Fu Wang ,  Chih-Chung Wu ,  Shih-Hong Chang

Inventor： Yu Huang ,  Bing-Joe Hwang ,  Hsuan-Fu Wang ,  Chih-Chung Wu ,  Shih-Hong Chang

IPC: H01L31/18 ,  C01B19/00

CPC classification number: C01B19/002 ,  C01G3/00 ,  C01G15/00 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2006/40 ,  H01L51/0037

Abstract: Fabrication methods for nano-scale chalcopyritic powders and polymeric thin-film solar cells are presented. The fabrication method for nano-scale chalcopyritic powders includes providing a solution consisting of group IB, IIIA, VIA elements on the chemistry periodic table or combinations thereof. The solution is heated by a microwave generator. The solution is washed and filtered by a washing agent. The solution is subsequently dried, thereby acquiring nano-scale chalcopyritic powders.

Abstract translation: 提出了纳米级黄铜矿粉末和聚合物薄膜太阳能电池的制备方法。 纳米级黄铜矿粉末的制造方法包括在化学周期表上提供由IB，IIIA，VIA族元素组成的溶液或其组合。 溶液由微波发生器加热。 将溶液洗涤并用洗涤剂过滤。 随后将溶液干燥，从而获得纳米级黄铜矿粉末。

公开(公告)号：US07610409B2

公开(公告)日：2009-10-27

申请号：US11339173

申请日：2006-01-24

Applicant: Yu Huang ,  Zhou Lu ,  Fan Chen

Inventor： Yu Huang ,  Zhou Lu ,  Fan Chen

IPC: G06F3/00 ,  G06F12/00

CPC classification number: G06F13/385

Abstract: A Universal Serial Bus data transport method and its device is disclosed. Data transport is performed through a high-speed transport technique based on a Universal Serial Bus, which consists of Universal Serial Bus protocol for communication between the device and the host, and SCSI protocol for interaction between the device and the upper driver layer. A data transport device using the Universal Serial Bus thus uses the embedded driver inside the operating system, which may be self-loaded/self-initialized, and have high data transport speed, and convenient to use.

Abstract translation: 公开了一种通用串行总线数据传输方法及其装置。 通过基于通用串行总线的高速传输技术来执行数据传输，该通用串行总线由用于设备和主机之间的通信的通用串行总线协议和用于设备与上层驱动器层之间的交互的SCSI协议组成。 因此，使用通用串行总线的数据传输装置使用操作系统内的嵌入式驱动器，其可以是自载/自初始化，并具有高数据传输速度，并且使用方便。

公开(公告)号：US07595260B2

公开(公告)日：2009-09-29

申请号：US11543326

申请日：2006-10-04

Applicant: Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

Inventor： Charles M. Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC: H01L21/30 ,  H01L21/86

CPC classification number: H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

Abstract: A bulk-doped semiconductor may be at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may have a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof.

Abstract translation: 体掺杂半导体可以是以下至少一种：单晶，细长和体掺杂半导体，其沿​​着其纵向轴线的任何点处具有小于500纳米的最大横截面尺寸， 具有至少一部分具有小于500纳米的最小宽度的立体和体掺杂半导体。 这种半导体的至少一部分可以具有小于200纳米，或小于150纳米，或小于100纳米，或小于80纳米，或小于70纳米，或小于60纳米的最小宽度，或 小于40纳米，或小于20纳米，或小于10纳米，甚至小于5纳米。 这样的半导体可以在生长期间被掺杂。 这样的半导体可以是设备的一部分，其可以包括各种设备中的任何一种以及它们的组合。

公开(公告)号：US20090057224A1

公开(公告)日：2009-03-05

申请号：US11897675

申请日：2007-08-30

Applicant: Yu Huang ,  Richard W. Baker ,  Tiem Aldajani ,  Jennifer Ly

Inventor： Yu Huang ,  Richard W. Baker ,  Tiem Aldajani ,  Jennifer Ly

IPC: C07C7/144 ,  B01D15/14 ,  B01D29/05 ,  C07C29/80

CPC classification number: B01D71/36 ,  B01D53/268 ,  B01D61/362 ,  B01D69/12 ,  B01D71/12 ,  B01D71/32 ,  B01D71/38 ,  B01D71/80 ,  B01D2325/20

Abstract: Processes for removing water from organic compounds, especially polar compounds such as alcohols. The processes include a membrane-based dehydration step, using a membrane that has a dioxole-based polymer selective layer or the like and a hydrophilic selective layer, and can operate even when the stream to be treated has a high water content, such as 10 wt % or more. The processes are particularly useful for dehydrating ethanol.

Abstract translation: 从有机化合物，特别是极性化合物如醇中除去水的方法。 该方法包括使用具有二氧杂环烯基聚合物选择层等的膜和亲水选择层的膜基脱水步骤，即使待处理流体具有高含水量，例如10 wt％以上。 该方法特别适用于乙醇脱水。

公开(公告)号：US07495900B2

公开(公告)日：2009-02-24

申请号：US11306452

申请日：2005-12-29

Applicant: Shu-Gang Shi ,  Yu Huang

Inventor： Shu-Gang Shi ,  Yu Huang

IPC: G06F1/16

CPC classification number: G06F1/181

Abstract: A protection mechanism in accordance with a preferred embodiment of the present invention includes a bracket for being secured to a rear portion of a computer chassis, and first and second covers respectively pivotally attached to the bracket. Adjacent sides of the first and second covers each form a lug. The lug of the first cover abuts against the lug of the second cover so as to prevent the second cover from rotating.

Abstract translation: 根据本发明的优选实施例的保护机构包括用于固定到计算机机箱的后部的支架，以及分别枢转地附接到支架的第一和第二盖。 第一和第二盖的相邻侧各自形成凸耳。 第一盖的凸耳抵靠第二盖的凸耳，以防止第二盖旋转。

公开(公告)号：US07333689B2

公开(公告)日：2008-02-19

申请号：US11241003

申请日：2005-09-30

Applicant: Vinod M. Menon ,  Milind R. Gokhale ,  Stephen R. Forrest ,  Yu Huang ,  Fengnian Xia

Inventor： Vinod M. Menon ,  Milind R. Gokhale ,  Stephen R. Forrest ,  Yu Huang ,  Fengnian Xia

IPC: G02B6/26 ,  G02B6/10

CPC classification number: H01S5/1082 ,  B82Y20/00 ,  G02B6/1228 ,  H01S5/065 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/162 ,  H01S5/3213 ,  H01S5/34306

Abstract: An asymmetric twin waveguide (ATG) structure with quantum-well intermixing in the taper region of the active waveguide is disclosed. The structure comprises a first waveguide, a second waveguide, and a taper formed in the second waveguide. The taper has an intermixed area formed therein comprising a plurality of quantum wells intermixed with a plurality of barriers. The quantum wells and barriers may be intermixed using plasma-enhanced intermixing such as, for example, Argon plasma enhanced intermixing. Quantum-well intermixing reduces absorption loss normally encountered in the movement of light between waveguides.

Abstract translation: 公开了在有源波导的锥形区域中具有量子阱混合的不对称双波导（ATG）结构。 该结构包括第一波导，第二波导和形成在第二波导中的锥形。 该锥形件具有形成在其中的混合区域，其包括与多个屏障混合的多个量子阱。 量子阱和屏障可以使用等离子体增强混合（例如，氩等离子体增强混合）混合。 量子阱混合减少了在波导之间光的移动中通常遇到的吸收损耗。

公开(公告)号：US20070032051A1

公开(公告)日：2007-02-08

申请号：US11543336

申请日：2006-10-04

Applicant: Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

Inventor： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC: H01G9/20

CPC classification number: H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

公开(公告)号：US20060282577A1

公开(公告)日：2006-12-14

申请号：US11339173

申请日：2006-01-24

Applicant: Yu Huang ,  Zhou Lu ,  Fan Chen

Inventor： Yu Huang ,  Zhou Lu ,  Fan Chen

IPC: G06F13/38

CPC classification number: G06F13/385

Abstract: A Universal Serial Bus data transport method and its device is disclosed. Data transport is performed through a high-speed transport technique based on a Universal Serial Bus, which consists of Universal Serial Bus protocol for communication between the device and the host, and SCSI protocol for interaction between the device and the upper driver layer. A data transport device using the Universal Serial Bus thus uses the embedded driver inside the operating system, which may be self-loaded/self-initialized, and have high data transport speed, and convenient to use.

Abstract translation: 公开了一种通用串行总线数据传输方法及其装置。 通过基于通用串行总线的高速传输技术来执行数据传输，该通用串行总线由用于设备和主机之间的通信的通用串行总线协议和用于设备与上层驱动器层之间的交互的SCSI协议组成。 因此，使用通用串行总线的数据传输装置使用操作系统内的嵌入式驱动器，其可以是自载/自初始化，并具有高数据传输速度，并且使用方便。

公开(公告)号：US20060279933A1

公开(公告)日：2006-12-14

申请号：US11269379

申请日：2005-11-08

Applicant: Hsieh-Kun Lee ,  Chun-Chi Chen ,  Shin-Hsuu Wung ,  Yu Huang

Inventor： Hsieh-Kun Lee ,  Chun-Chi Chen ,  Shin-Hsuu Wung ,  Yu Huang

IPC: H05K7/20

CPC classification number: H01L23/4093 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic assembly includes a PCB (20), a socket (22) mounted on the PCB, a CPU (24) connected with the socket, a heat sink (10) in thermal contact with the CPU, a foldable back plate (30) attached to an underside of the PCB and a base plane (40) forming four bridges (42). The back plate includes a first piece section (32) and a second piece section (34) pivotally joined together by a pivot (36). The first and the second piece sections each comprise two legs inserted into two corresponding bridges. Screws are used to extend through the heat sink, the PCB, the bridges to threadedly engage with the legs of the back plate, respectively. The pivot is located under a part of the PCB at which the CPU is mounted.

Abstract translation: 电子组件包括PCB（20），安装在PCB上的插座（22），与插座连接的CPU（24），与CPU热接触的散热器（10），可折叠背板（30） 附接到PCB的下侧和形成四个桥（42）的基面（40）。 后板包括通过枢轴（36）枢轴连接在一起的第一片段（32）和第二片段（34）。 第一和第二片段各自包括插入到两个对应的桥中的两个腿。 螺丝用于延伸穿过散热片，PCB，桥接件分别与背板的腿部螺纹接合。 枢轴位于安装有CPU的PCB的一部分下方。

公开(公告)号：US20060175601A1

公开(公告)日：2006-08-10

申请号：US11172408

申请日：2005-06-30

Applicant: Charles Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David Smith ,  Deli Wang ,  Zhaohui Zhong

Inventor： Charles Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David Smith ,  Deli Wang ,  Zhaohui Zhong

IPC: H01L31/109

CPC classification number: C30B29/60 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/73 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L33/20 ,  H01L51/0048

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.