公开(公告)号：US20240198366A1

公开(公告)日：2024-06-20

申请号：US18540419

申请日：2023-12-14

Applicant: ASM IP Holding B.V.

Inventor： Dinkar Nandwana ,  Allen D'Ambra ,  Dinh Tran ,  Chen Ni ,  Gary Paulsen ,  Michael Samy Boulos Hanna Elkomos

IPC: B05B1/30 ,  B05B1/00 ,  B05B1/18

CPC classification number: B05B1/3006 ,  B05B1/005 ,  B05B1/185

Abstract: Methods and apparatuses for measuring a flow conductance of a showerhead assembly are described. For example, a showerhead assembly may be seated in a housing. A gas source may be coupled to an intake port of the showerhead assembly and supply gas to the showerhead assembly via the intake port. A pressure controller may be coupled between the gas source and the showerhead assembly. The pressure controller may measure a flow throughput of the gas that passes through the pressure controller. The pressure controller may maintain the gas being supplied to the showerhead assembly at a first pressure value. A pressure transducer coupled to an exhaust port of the showerhead assembly may measure a second pressure value. A controller may determine a flow conductance of the showerhead assembly based on the flow throughput and the first and second pressure values.

公开(公告)号：US20240191351A1

公开(公告)日：2024-06-13

申请号：US18530444

申请日：2023-12-06

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux

IPC: C23C16/44 ,  C23C16/30 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02

CPC classification number: C23C16/4412 ,  C23C16/308 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/52 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/0228

Abstract: A substrate processing system and a method for forming a layer on one or more substrates is disclosed. Embodiments, of the recently described substrate processing system comprise a process chamber, a precursor storage module, a pump, a pump valve and a controller configured to control the provision of the precursor flow to the process chamber.

公开(公告)号：USD1030687S1

公开(公告)日：2024-06-11

申请号：US29840698

申请日：2022-05-31

Applicant: ASM IP Holding B.V.

Designer： Shujin Huang ,  Junwei Su ,  Wentao Wang ,  Xing Lin

Abstract: FIG. 1 is a front perspective view of a susceptor, showing our new design;
FIG. 2 is a bottom perspective view thereof;
FIG. 3 is right side view thereof;
FIG. 4 is a left side view thereof;
FIG. 5 is front view thereof;
FIG. 6 is back view thereof;
FIG. 7 is a top view thereof; and,
FIG. 8 is a bottom view thereof.

公开(公告)号：US20240178021A1

公开(公告)日：2024-05-30

申请号：US18522152

申请日：2023-11-28

Applicant: ASM IP Holding B.V.

Inventor： Senthil Sivaraman ,  Mandar Deshpande ,  Samer Banna

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67201 ,  H01L21/67098 ,  H01L21/6719 ,  H01L21/67742

Abstract: A load lock arrangement includes a load lock body having an upper plate member defining an upper accessory seat, an intermediate plate member spaced apart from the upper plate member and defining an intermediate accessory seat, and a lower plate member separated from the upper plate member by the intermediate plate member and defining a lower accessory seat. One of an upper heater and an upper accessory seat blanking plate is fixed to the upper accessory seat; one of an upper chill plate and an intermediate accessory seat blanking plate fixed to the intermediate accessory seat; and one of a lower chill plate, a lower heater, and a lower accessory seat blanking plate fixed to the lower accessory seat. Semiconductor processing systems, methods of making load lock arrangements, and material layer deposition methods are also described.

公开(公告)号：US20240177992A1

公开(公告)日：2024-05-30

申请号：US18519172

申请日：2023-11-27

Applicant: ASM IP Holding B.V.

Inventor： Andrea Illiberi ,  Shaoren Deng ,  Giuseppe Alessio Verni ,  Daria Nevstrueva ,  Marko Tuominen ,  Charles Dezelah ,  Daniele Chiappe ,  Eva Elisabeth Tois ,  Viraj Madhiwala ,  Michael Givens

IPC: H01L21/02

CPC classification number: H01L21/02337 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/0228

Abstract: The disclosure relates to methods of forming organic polymers comprising polyimide and layers comprising the same and to methods of reducing polyamic acid content of an organic polymer. The embodiments of the disclosure further relate to methods of fabricating semiconductor devices, to selectively depositing a material on a surface of a semiconductor substrate and to semiconductor processing assemblies. The methods are characterized by contacting a polyimide-containing material, such as a layer, with a modifying agent that increases the proportion of polyimide in the organic polymer material.

公开(公告)号：USD1028913S1

公开(公告)日：2024-05-28

申请号：US29797476

申请日：2021-06-30

Applicant: ASM IP HOLDING B.V.

Designer： Rutvij Naik ,  Junwei Su ,  Wentao Wang ,  Chuqin Zhou ,  Xing Lin

Abstract: FIG. 1 is a top perspective view of a semiconductor deposition reactor ring;
FIG. 2 is a bottom perspective view thereof;
FIG. 3 is a front view thereof;
FIG. 4 is a back view thereof;
FIG. 5 is a left view thereof;
FIG. 6 is a right view thereof;
FIG. 7 is a top view thereof; and,
FIG. 8 is a bottom view thereof.
The broken lines in the drawings illustrate portions of the semiconductor deposition reactor ring that form no part of the claimed design.

公开(公告)号：US11988316B2

公开(公告)日：2024-05-21

申请号：US17944296

申请日：2022-09-14

Applicant: ASM IP Holding B.V.

Inventor： Andrew Michael Yednak, III

IPC: H01L21/67 ,  F16L53/38 ,  C23C16/455

CPC classification number: F16L53/38 ,  H01L21/67023 ,  C23C16/45561 ,  Y10T137/6416

Abstract: An apparatus capable of heating a liquid may provide a valve assembly configured to receive an incoming liquid from a bulk source. The valve assembly may control the flow of the liquid to a source vessel via a pipe system. The pipe system includes a first pipe directly connected to the valve assembly and a second pipe downstream from the first pipe and connected between the first pipe and the source valve. The second pipe is heated with a heating system that surrounds the second pipe, and the second pipe has a larger diameter than that of the first pipe.

公开(公告)号：US20240162036A1

公开(公告)日：2024-05-16

申请号：US18388548

申请日：2023-11-10

Applicant: ASM IP Holding B.V.

Inventor： Viraj Madhiwala ,  Eva Elisabeth Tois ,  Daniele Chiappe ,  Marko Tuominen

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/0217 ,  C23C16/308 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45527 ,  C23C16/56 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02312

Abstract: The disclosure relates to methods and deposition assemblies for selectively depositing material including silicon and nitrogen on a first surface of a substrate relative to the second surface of the same substrate. In the disclosure, material including silicon and nitrogen is selectively deposited on a first surface of a substrate relative to a second surface of the same substrate by a cyclic deposition process by providing a substrate in a reaction chamber, providing a silicon precursor comprising silicon and halogen into the reaction chamber in a vapor phase and providing a nitrogen precursor into the reaction chamber in a vapor phase to form the material including silicon and nitrogen on the first surface.

公开(公告)号：US20240153767A1

公开(公告)日：2024-05-09

申请号：US18386128

申请日：2023-11-01

Applicant: ASM IP Holding B.V.

Inventor： Bart Vermeulen ,  Varun Sharma ,  Andrea Illiberi ,  Michael Givens ,  Charles Dezelah ,  Eric Shero

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/267 ,  H01L29/792 ,  H10B43/27

CPC classification number: H01L21/02565 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/24 ,  H01L29/242 ,  H01L29/267 ,  H01L29/792 ,  H10B43/27

Abstract: Disclosed are methods and systems for depositing layers including a p-type semiconducting oxide onto a surface of a substrate. The deposition process includes a cyclical deposition process. Exemplary structures in which the layers may be incorporated include 3D NAND cells, memory devices, metal-insulator-metal structured, and DRAM capacitors.

公开(公告)号：US20240150898A1

公开(公告)日：2024-05-09

申请号：US18386481

申请日：2023-11-02

Applicant: ASM IP Holding B.V.

Inventor： Yoshiyuki Kikuchi ,  Hirotsugu Sugiura ,  Alexey Remnev ,  Koei Aida ,  Lingjun Xue

IPC: C23C16/458 ,  H01J37/32

CPC classification number: C23C16/4585 ,  H01J37/32715 ,  H01J37/32743 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: A substrate processing apparatus is provided. A substrate processing apparatus comprises a reaction chamber provided with a chamber wall comprising a first sidewall, a second sidewall disposed opposite to the first sidewall, a bottom wall connected to the first sidewall and the second sidewall; a gate valve tunnel disposed in the first sidewall configured to be closed by a gate valve; a substrate support provided with a top plate and a shaft, the substrate support being disposed within the reaction chamber and configured to support a substrate on the top plate, wherein the substrate support is configured to be vertically movable between a process position and a transfer position; and a liner disposed around perimeter of the substrate support and configured to move with the substrate support, wherein an outer wall of the liner is configured to cover the gate valve tunnel when the substrate support is in the process position.