摘要:
Methods of purifying hydrogen-containing materials are described. The methods may include the steps of providing a purifier material comprising silica. The silica may be heated at temperature of about 100° C. or more in a dry atmosphere to form activated silica. The activated silica may be contacted with a starting hydrogen-containing material, where the activated silica reduces a concentration of one or more impurity from the starting hydrogen-containing material to form the purified hydrogen-containing material, and where the activated silica does not decompose the purified hydrogen-containing material.
摘要:
According to the invention, a system for applying torque to a valve element that stops fluid flow through the valve is disclosed. The system may include an input element, a drive element, and a torque transferring mechanism. The input element may be configured to receive a torque. The drive element may be configured to apply substantially none of the torque, or at least a portion of the torque, to the valve element. The torque transferring mechanism may be configured to receive the torque from the input element, and transfer substantially none of the torque, or at least a portion of the torque, to the drive element based at least in part on a resistance of the valve element to turning.
摘要:
A modular fluid handling system is disclosed and may include a plurality of fluid handling units. Adjacent fluid handling units may be coupled together to form the fluid handling system. The fluid handling system may deliver fluid from at least one fluid source to fluid utilizing equipment. A plurality of fluid passages may be formed from the coupled plurality of fluid handling units, where the diameter of at least one fluid passage may be greater than the diameter of at least one other fluid passage.
摘要:
A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. The vessel contains an ionic liquid therein. The fluid is contacted with the ionic liquid for take-up of the fluid by the ionic liquid. There is substantially no chemical change in the ionic liquid and the fluid. The fluid is released from the ionic liquid and dispensed from the vessel.
摘要:
A method of coating an interior of a gas storage container, where the method includes supplying a chemical vapor precursor to the storage container, and forming a metal coating on the interior surface of the container, where the coating is formed from the chemical vapor precursor. Also, a gas storage container that includes a gas storage vessel with an interior surface that has a liner formed on the interior surface of the storage vessel. The liner may include tungsten metal with a purity of about 99%, by weight, or more. Additionally, a system for making a metal lined gas storage container that may include a chemical vapor precursor generator, and a precursor injection assembly for transporting the precursor into a gas storage vessel. The system may also include an exhaust outlet for removing gaseous deposition products from the gas storage vessel.
摘要:
A process for removing trace amounts of moisture and/or one or more impurities from contaminated hydride, inert and non-reactive gases, thus decreasing the concentration of the impurities to parts-per-billion (ppb) or parts-per-trillion (ppt) levels. The gas purifier materials of this invention include thermally activated aluminas, said aluminas including organic alumina materials, modified organic alumina materials, and modified inorganic aluminas. The thermally activated alumina materials of this invention are activated by heating the alumina material at a temperature between about 50° C.–1000° C. in an inert or non-inert atmosphere or in a vacuum and maintaining the activated material in the inert or non-inert atmosphere or in a vacuum atmosphere subsequent to said activation but prior to use.
摘要:
The present invention relates to a system for recirculating the gas atmosphere within an excimer laser system, where contaminates, created in the laser's operation, are removed, and the gas concentrations of additive gases, such as Xe, Kr, or others, depleted in the laser operation, are rebalanced to specific lasing mixtures by analyzation and component replenishment from one or more external supplies.
摘要:
The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as “materials”). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to, a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CyFz) and/or an oxide of carbon (COx) to a nitrogen trifluoride (NF3) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF2. The NF3 may be excited in a plasma inside the CVD chamber or in a remote plasma region upstream from the CVD chamber. The additive(s) may be introduced upstream or downstream of the remote plasma such that both NF3 and the additive(s) (and any plasma-generated effluents) are present in the CVD chamber during cleaning.
摘要:
Methods and systems of purifying an acetylene process gas are described. The methods may include the steps of providing an acetylene vessel containing source acetylene mixed with a solvent impurity, and flowing the source acetylene through a purification container that holds a cooled purifying medium, where at least a portion of the solvent impurity in the source acetylene separates as a liquid impurity on the purifying medium. The method may also include removing the liquid from the purification container and flowing a purified acetylene gas from the purification container. The purified acetylene gas has a concentration of the solvent impurity of about 5 vol. % or less, and the separated liquid impurity is removed without interrupting the flow of the acetylene while the purified acetylene gas flows from the purification container to keep the concentration of the solvent impurity substantially constant in the purified acetylene gas.
摘要:
The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.