公开(公告)号：US20160264410A1

公开(公告)日：2016-09-15

申请号：US15162997

申请日：2016-05-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael T. Brigham ,  Christopher V. Jahnes ,  Cameron E. Luce ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper ,  Eric J. White

IPC: B81C1/00

CPC classification number: B81C1/0015 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2207/09 ,  B81C1/00047 ,  B81C1/00269 ,  B81C1/00365 ,  B81C1/00531 ,  B81C1/00936 ,  B81C2201/0104 ,  B81C2201/0107 ,  B81C2201/0121 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0176 ,  B81C2201/0181 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0714 ,  G06F17/5009

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

公开(公告)号：US20160008849A1

公开(公告)日：2016-01-14

申请号：US14799632

申请日：2015-07-15

Applicant: Hitachi Medical Corporation

Inventor： Shuntaro MACHIDA ,  Takashi KOBAYASHI

IPC: B06B1/02

CPC classification number: B06B1/0292 ,  B81C1/00158 ,  B81C1/00182 ,  B81C1/00214 ,  B81C1/00476 ,  B81C1/00531 ,  B81C1/00611 ,  B81C2201/0104 ,  B81C2201/0107 ,  B81C2201/0109 ,  C09K13/00 ,  C23F4/00 ,  H01L21/30604 ,  H01L29/84 ,  Y10T29/49156

Abstract: Disclosed is an ultrasonic transducer that is provided with: a bottom electrode; an electric connection part which is connected to the bottom electrode from the bottom of the bottom electrode; a first insulating film which is formed so as to cover the bottom electrode; a cavity which is formed on the first insulating film so as to overlap the bottom electrode when seen from above; a second insulating film which is formed so as to cover the cavity; and a top electrode which is formed on the second insulating film so as to overlap the cavity when seen from above. The electric connection part to the bottom electrode is positioned so as to not overlap the cavity when seen from above.

Abstract translation: 公开了一种超声波换能器，其具备：底部电极; 电连接部，其从所述底部电极的底部连接到所述底部电极; 形成为覆盖底部电极的第一绝缘膜; 形成在第一绝缘膜上以便从上方观察时与底部电极重叠的空腔; 形成为覆盖空腔的第二绝缘膜; 以及形成在第二绝缘膜上以从上方观察时与空腔重叠的顶部电极。 位于底部电极的电连接部分被定位为当从上方观察时不与腔体重叠。

公开(公告)号：US08358458B2

公开(公告)日：2013-01-22

申请号：US12939909

申请日：2010-11-04

Applicant: James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

Inventor： James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

IPC: G02B26/00

CPC classification number: B81B3/0008 ,  B81B2201/042 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/24917

Abstract: Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.

Abstract translation: 提供了减轻设备的可移动部件的永久性粘附或静电的机电系统装置的制造方法。 该方法提供了具有改进和可再现的表面粗糙度的非晶硅牺牲层。 非晶硅牺牲层对于机电系统器件中常用的材料进一步表现出优异的附着性。

公开(公告)号：US08174085B2

公开(公告)日：2012-05-08

申请号：US12580052

申请日：2009-10-15

Applicant: Goro Nakatani

Inventor： Goro Nakatani

IPC: H01L29/84

CPC classification number: B81B3/001 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00476 ,  B81C1/00595 ,  B81C2201/0107 ,  G01L9/0042 ,  G01L9/0073 ,  H04R19/005

Abstract: A method of manufacturing an MEMS sensor according to the present invention includes the steps of: forming a first sacrificial layer on one surface of a substrate; forming a lower electrode on the first sacrificial layer; forming a second sacrificial layer made of a metallic material on the first sacrificial layer to cover the lower electrode; forming an upper electrode made of a metallic material on the second sacrificial layer; forming a protective film made of a nonmetallic material on the substrate to collectively cover the first sacrificial layer, the second sacrificial layer and the upper electrode; and removing at least the second sacrificial layer by forming a through-hole in the protective film and supplying an etchant to the inner side of the protective film through the through-hole.

Abstract translation: 根据本发明的MEMS传感器的制造方法包括以下步骤：在衬底的一个表面上形成第一牺牲层; 在所述第一牺牲层上形成下电极; 在所述第一牺牲层上形成由金属材料制成的第二牺牲层以覆盖所述下电极; 在所述第二牺牲层上形成由金属材料制成的上电极; 在所述基板上形成由非金属材料制成的保护膜，以共同覆盖所述第一牺牲层，所述第二牺牲层和所述上电极; 以及通过在所述保护膜中形成通孔并且通过所述通孔向所述保护膜的内侧供给蚀刻剂，至少去除所述第二牺牲层。

公开(公告)号：US08097483B2

公开(公告)日：2012-01-17

申请号：US12682000

申请日：2008-10-15

Applicant: Robertus T. F. Van Schaijk ,  Piebe Anne Zijlstra ,  Ronald Koster ,  Pieter Simon Van Dijk

Inventor： Robertus T. F. Van Schaijk ,  Piebe Anne Zijlstra ,  Ronald Koster ,  Pieter Simon Van Dijk

IPC: H01L21/00

CPC classification number: B81C1/0015 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81C2201/0107 ,  H01G5/16 ,  H01G13/00

Abstract: Method for manufacturing a capacitor on a substrate, the capacitor including a first electrode (5) and a second electrode (12; 25), the first and second electrodes being separated by a cavity (16; 32), the substrate including an insulating surface layer (3), the first electrode (5) being arranged on the insulating surface layer a first metal body (7a; 20) being adjacent to the first electrode and arranged as anchor of the second electrode (12; 25) the second electrode being arranged as a beam-shaped body (12; 25) located on the first metal body and above the first electrode; the cavity (16; 32) being laterally demarcated by a sidewall of the first metal body.

Abstract translation: 在基板上制造电容器的方法，所述电容器包括第一电极（5）和第二电极（12; 25），所述第一和第二电极由空腔（16; 32）分开，所述基板包括绝缘表面 层（3），所述第一电极（5）在所述绝缘表面层上布置有与所述第一电极相邻并且被布置为所述第二电极（12; 25）的锚定件的第一金属体（7a; 20），所述第二电极为 被布置为位于所述第一金属体上并位于所述第一电极上方的梁状体（12; 25）; 空腔（16; 32）由第一金属体的侧壁横向划分。

公开(公告)号：US20100264498A1

公开(公告)日：2010-10-21

申请号：US12682000

申请日：2008-10-15

Applicant: Robertus T. F. Van Schaijk ,  Piebe Anne Zijlstra ,  Ronald Koster ,  Pieter Simon Van Dijk

Inventor： Robertus T. F. Van Schaijk ,  Piebe Anne Zijlstra ,  Ronald Koster ,  Pieter Simon Van Dijk

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81C1/0015 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81C2201/0107 ,  H01G5/16 ,  H01G13/00

Abstract: Method for manufacturing a capacitor on a substrate, the capacitor including a first electrode (5) and a second electrode (12; 25), the first and second electrodes being separated by a cavity (16; 32), the substrate including an insulating surface layer (3), the first electrode (5) being arranged on the insulating surface layer a first metal body (7a; 20) being adjacent to the first electrode and arranged as anchor of the second electrode (12; 25) the second electrode being arranged as a beam-shaped body (12; 25) located on the first metal body and above the first electrode; the cavity (16; 32) being laterally demarcated by a sidewall of the first metal body.

Abstract translation: 在基板上制造电容器的方法，所述电容器包括第一电极（5）和第二电极（12; 25），所述第一和第二电极由空腔（16; 32）分开，所述基板包括绝缘表面 层（3），所述第一电极（5）在所述绝缘表面层上布置有与所述第一电极相邻并且被布置为所述第二电极（12; 25）的锚定件的第一金属体（7a; 20），所述第二电极为 被布置为位于所述第一金属体上并位于所述第一电极上方的梁状体（12; 25）; 空腔（16; 32）由第一金属体的侧壁横向划分。

公开(公告)号：US20100213068A1

公开(公告)日：2010-08-26

申请号：US12706566

申请日：2010-02-16

Applicant: Christopher A. Bang

Inventor： Christopher A. Bang

IPC: C25D1/00

CPC classification number: G01P15/0802 ,  B33Y10/00 ,  B81B2201/042 ,  B81C99/0085 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/0197 ,  G01P15/125

Abstract: Molded structures, methods of and apparatus for producing the molded structures are provided. At least a portion of the surface features for the molds are formed from multilayer electrochemically fabricated structures (e.g. fabricated by the EFAB™ formation process), and typically contain features having resolutions within the 1 to 100 μm range. The layered structure is combined with other mold components, as necessary, and a molding material is injected into the mold and hardened. The layered structure is removed (e.g. by etching) along with any other mold components to yield the molded article. In some embodiments portions of the layered structure remain in the molded article and in other embodiments an additional molding material is added after a partial or complete removal of the layered structure.

Abstract translation: 提供了模制结构，制造模制结构的方法和设备。 用于模具的表面特征的至少一部分由多层电化学制造的结构（例如通过EFAB TM形成工艺制造）形成，并且通常包含具有在1至100μm范围内的分辨率的特征。 根据需要，将层状结构与其他模具部件组合，并将模塑材料注入模具中并硬化。 层压结构与任何其它模具部件一起被除去（例如通过蚀刻）以产生模塑制品。 在一些实施例中，分层结构的部分保留在模制品中，并且在其它实施例中，在部分或完全去除层状结构之后添加另外的模制材料。

公开(公告)号：US20090234425A1

公开(公告)日：2009-09-17

申请号：US12296519

申请日：2007-01-26

Applicant: Hans-Jurgen Tiedtke

Inventor： Hans-Jurgen Tiedtke

IPC: A61N1/05 ,  B05D3/00 ,  C23C14/34 ,  B32B15/00

CPC classification number: A61N1/05 ,  A61N1/0543 ,  A61N1/0551 ,  B81C99/008 ,  B81C2201/0107 ,  B81C2201/0181 ,  Y10T428/12493

Abstract: The object, to create a method for producing multilayers or multilayer systems wherein the structures generated on a substrate can easily be jointly detached from the substrate and are preserved in a composite, is achieved by the present invention by means of a method for producing implant structures comprising generating a first metal layer on a substrate, generating a second metal layer above the first metal layer, producing a number of multilayered implant structures above the second metal layer, removing the first metal layer between the substrate and the second metal layer, and releasing the implant structures from the substrate in a coherent composite. With the method according to the invention, between the implant structures and the substrate a release layer is generated consisting of two or three metal layers which serve as sacrificial layer in the course of releasing the fully processed multilayers by means of an under-etching process. As a result, a uniform and reliable separation of the finished multilayers from the substrate in a composite is achieved, facilitating the subsequent technology for assembly and interconnection of the implant structures.

Abstract translation: 本发明的目的是为了产生多层或多层体系的制造方法，其中在衬底上产生的结构可以容易地与衬底共同分离并且被保存在复合材料中，这通过本发明通过生产植入结构的方法来实现 包括在衬底上产生第一金属层，在第一金属层上方产生第二金属层，在第二金属层之上产生多个多层植入结构，去除衬底和第二金属层之间的第一金属层，并释放 在相干复合材料中来自基底的植入物结构。 利用根据本发明的方法，在植入结构和衬底之间，产生剥离层，其由在蚀刻过程中释放完全处理的多层膜的过程中用作牺牲层的两个或三个金属层组成。 结果，实现了在复合材料中完成的多层与基底的均匀可靠的分离，有助于随后的用于植入结构的组装和互连的技术。

公开(公告)号：US07566939B2

公开(公告)日：2009-07-28

申请号：US11149921

申请日：2005-06-10

Applicant: Michel Despont ,  Roy H. Magnuson ,  Ute Drechsler

Inventor： Michel Despont ,  Roy H. Magnuson ,  Ute Drechsler

IPC: H01L29/82

CPC classification number: H01L21/30604 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C1/00801 ,  B81C2201/0107 ,  B81C2201/0114 ,  B81C2201/0133 ,  C23F13/14

Abstract: A method for protecting a material of a microstructure comprising the material and a noble metal layer against undesired galvanic etching during manufacture, the method comprises forming on the structure a sacrificial metal layer having a lower redox potential than the material, the sacrificial metal layer being electrically connected to the noble metal layer.

Abstract translation: 一种用于在制造期间保护包含该材料的微结构材料和贵金属层以防止不期望的电化学蚀刻的方法，所述方法包括在所述结构上形成具有比所述材料更低的氧化还原电位的牺牲金属层，所述牺牲金属层是电 连接到贵金属层。

公开(公告)号：US20080268575A1

公开(公告)日：2008-10-30

申请号：US11789578

申请日：2007-04-24

Applicant: Guillaume Bouche ,  Ralph N. Wall

Inventor： Guillaume Bouche ,  Ralph N. Wall

IPC: H01L21/78 ,  H01L21/302

CPC classification number: B81C1/0015 ,  B81B2201/014 ,  B81B2203/0384 ,  B81C1/00333 ,  B81C2201/0107 ,  B81C2201/0157 ,  B81C2203/0118

Abstract: In accordance with the present invention, accurate and easily controlled sloped walls may be formed using. AlN and preferably a heated TMAH for such purpose as the fabrication of MEMS devices, wafer level packaging and fabrication of fluidic devices. Various embodiments are disclosed.

Abstract translation: 根据本发明，可以使用精确且容易控制的倾斜壁来形成。 AlN，并且优选地是加热的TMAH，用于制造MEMS器件，晶片级封装和流体器件的制造。 公开了各种实施例。