摘要:
In a block exposure pattern extracting system applied to a charged-particle beam exposure system having a block mask including a plurality of transparent stats having different shapes, a comparator unit compares first vectors connecting one of apexes of an input exposure pattern to other apexes thereof with second vectors connecting a reference point which is one of apexes of a unit block exposure pattern to other apexes of the unit block exposure pattern. A determining unit determines whether or not the first vectors coincide with the second vectors. An extracting unit extracts the input exposure pattern as the unit block exposure pattern when the determining unit determines that the first vectors coincide with the second vectors.
摘要:
A charged particle beam apparatus is provided with an aperture device which includes a plurality of slit plates. Each of the slit plates includes a plurality of slits having different widths. The slit plates are superimposed in a direction of the axis of a charged particle beam so that the corresponding slits in the slit plates overlap to define an aperture which controls a beam current.
摘要:
Particle beam systems, for example electron beam microscopes, exhibit improved resolution in a first direction by manipulating a beam of charged particles so that the beam has a non-circular beam profile in a focal plane of an objective lens. Multiple images of a sample can be recorded at different orientations of the beam profile relative to the sample, and the recorded images can be synthesized using non-uniform spatial-frequency weights to obtain an image of the sample having improved resolution in any direction. The orientation of the beam profile can be adjusted to a target orientation depending on a structure on a sample prior to recording an image of the sample, thereby making it possible to achieve highest resolution in a selected direction of interest.
摘要:
Variations in charged-particle-beam (CPB) source location are determined by scanning an alignment aperture that is fixed with respect to a beam defining aperture in a CPB, particularly at edges of a defocused CPB illumination disk. The alignment aperture is operable to transmit a CPB portion to a secondary emission surface that produces secondary emission directed to a scintillator element. Scintillation light produced in response is directed out of a vacuum enclosure associated with the CPB via a light guide to an external photodetection system.
摘要:
The present invention relates to a slit diaphragm, a slit diaphragm system comprising at least two slit diaphragms arranged adjacent to each other and to a coating module and coating facility comprising a slit diaphragm.
摘要:
The present invention concerns a charged-particle multi-beamlet system that comprises a source of charged particles (301); a first multi-aperture plate (320) having plural apertures disposed in a charged particle beam path of the system downstream of the source; a first multi-aperture selector plate (313) having plural apertures; a carrier (340), wherein the first multi-aperture selector plate is mounted on the carrier; and an actuator (350) configured to move the carrier such that the first multi-aperture selector plate is disposed in the charged particle beam path of the system downstream of the source in a first mode of operation of the system, and such that the first multi-aperture selector plate is disposed outside of the charged particle beam path in a second mode of operation of the system. The source, the first multi-aperture plate and the carrier of the system are arranged such that a first number of charged particle beamlets is generated at a position downstream of both the first multi-aperture plate and the first multi-aperture selector plate in the first mode of operation, and that a second number of charged particle beamlets is generated at the position in the second mode of operation, wherein the first number of beamlets differs from the second number of beamlets.
摘要:
The present invention concerns a charged-particle multi-beamlet system that comprises a source of charged particles (301); a first multi-aperture plate (320) having plural apertures disposed in a charged particle beam path of the system downstream of the source; a first multi-aperture selector plate (313) having plural apertures; a carrier (340), wherein the first multi-aperture selector plate is mounted on the carrier; and an actuator (350) configured to move the carrier such that the first multi-aperture selector plate is disposed in the charged particle beam path of the system downstream of the source in a first mode of operation of the system, and such that the first multi-aperture selector plate is disposed outside of the charged particle beam path in a second mode of operation of the system. The source, the first multi-aperture plate and the carrier of the system are arranged such that a first number of charged particle beamlets is generated at a position downstream of both the first multi-aperture plate and the first multi-aperture selector plate in the first mode of operation, and that a second number of charged particle beamlets is generated at the position in the second mode of operation, wherein the first number of beamlets differs from the second number of beamlets.
摘要:
A method of forming a reticle includes: loading a blank reticle; projecting an electron beam; moving a second aperture plate having a first pattern aperture and a second pattern aperture so that the first pattern aperture is directly overlapped by a first aperture of a first aperture plate, the electron beam passing through the first pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam after the electron beam passes the first pattern aperture, to form a first exposure pattern; moving the second aperture plate so that the second pattern aperture is directly overlapped by the first aperture of the first aperture plate, the electron beam passing through the second pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam after the electron beam passes the second pattern aperture, to form a second exposure pattern; and developing the blank reticle having the first and second exposure patterns to form the reticle having first and second patterns.
摘要:
Disclosed is an operation for an optical system which achieves observation of focused ion beam processing equivalent to that in a case wherein a sample stage is tilted mechanically. In a focused ion beam optical system, an aperture, a tilting deflector, a beam scanner, and an objective lens are controlled so as to irradiate an ion beam tilted to the optical axis of the optical system, thereby achieving thin film processing and a cross section processing without accompanying adjustment and operation for a sample stage. The thin film processing and the cross section processing with a focused ion beam can be automated, and yield can be improved. For example, by applying the present invention to a cross section monitor to detect an end point, the cross section processing can be easily automated.
摘要:
Provided is a focused ion beam apparatus including a control portion configured to: store in advance, in a condenser voltage table, a calculation value of a condenser voltage for obtaining a reference beam current for all each of a plurality of apertures; obtain an experimental value of the condenser voltage for obtaining the reference beam current for a reference aperture; obtain a correction value of the condenser voltage by subtracting the calculation value stored for the reference aperture from the experimental value for the reference aperture; obtain setting values of the condenser voltage by adding the correction value to the calculation values stored for each of the plurality of the apertures; and store the obtained setting value in the condenser voltage table.