公开(公告)号：US20080176008A1

公开(公告)日：2008-07-24

申请号：US12010181

申请日：2008-01-22

申请人： Xinming Wang ,  Akira Owatari ,  Takashi Koba ,  Tsutomu Nakada ,  Akira Fukuda

发明人： Xinming Wang ,  Akira Owatari ,  Takashi Koba ,  Tsutomu Nakada ,  Akira Fukuda

IPC分类号： H01F10/08

CPC分类号： H01F41/24 ,  C23C18/161 ,  C23C18/1673 ,  C23C18/1879 ,  C23C18/36

摘要： A magnetic film forming apparatus can form a magnetic film, especially a magnetic alloy film, selectively on a metal surface exposed on a surface of a substrate, such as a semiconductor wafer. The magnetic film forming apparatus comprises an electroless plating apparatus having a magnetic field generation apparatus for generating a magnetic field around and parallel to a substrate disposed such that the surface of the substrate is in contact with a plating solution in a plating tank.

摘要翻译： 磁性膜形成装置可以在暴露在诸如半导体晶片的基板的表面上的金属表面上选择性地形成磁性膜，特别是磁性合金膜。 磁性膜形成装置包括具有磁场产生装置的化学镀设备，用于产生围绕并平行于基板的磁场，该基板设置成使得基板的表面与电镀槽中的镀液接触。

公开(公告)号：US06847545B2

公开(公告)日：2005-01-25

申请号：US10689717

申请日：2003-10-22

申请人： Naoki Nishimura

发明人： Naoki Nishimura

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  H01F10/08 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/16

CPC分类号： B82Y10/00 ,  G11C11/15 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic thin film element is provided with a magnetoresistive film including a first magnetic layer composed of a perpendicular magnetization film, a second magnetic layer composed of a perpendicular magnetization film having a higher coercive force than that of the first magnetic layer, and a nonmagenetic layer interposed between the first magnetic layer and the second magnetic layer. The resistance of the magnetoresistive film varies depending on whether or not the magnetic spins of the first magnetic layer and the second magnetic layer are in the same direction.

公开(公告)号：US6165329A

公开(公告)日：2000-12-26

申请号：US322080

申请日：1999-05-27

申请人： Bernard Rodmacq ,  Andre Pierrot ,  Philippe Gerard ,  Jean Mouchot

发明人： Bernard Rodmacq ,  Andre Pierrot ,  Philippe Gerard ,  Jean Mouchot

IPC分类号： G11B5/39 ,  G01R33/09 ,  H01F10/08 ,  H01F10/14 ,  H01F10/16 ,  H01F10/30 ,  H01F10/32 ,  H01F41/18 ,  H01F41/30 ,  H01L43/08 ,  G01R33/06 ,  C23C14/34

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/325 ,  H01F41/302

摘要： Multilayer magnetic transducer and structure and process for the production of the structure. The magnetic structure only has one stack of layers of a magnetic material separated by layers of a non-magnetic metallic material having a thickness such that there is an anti-ferromagnetic coupling between the magnetic layers, the magnetic material being chosen from among the alloys FeNi, FeNiCo, and NiCo and the non-magnetic material is silver.

摘要翻译： 多层磁换能器及结构及工艺生产结构。 磁性结构仅具有一层由磁性材料层隔开的一层层叠的非磁性金属材料，其厚度使得磁性层之间存在抗铁磁性耦合，磁性材料选自合金FeNi ，FeNiCo和NiCo，非磁性材料为银。

公开(公告)号：US6163437A

公开(公告)日：2000-12-19

申请号：US44886

申请日：1998-03-20

申请人： Kenji Inage ,  Toshiaki Maeda ,  Jun Shouji ,  Koichi Terunuma ,  Masanori Sakai

发明人： Kenji Inage ,  Toshiaki Maeda ,  Jun Shouji ,  Koichi Terunuma ,  Masanori Sakai

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/40 ,  H01F10/00 ,  H01F10/08 ,  H01F10/32 ,  H01L43/08

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3166 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/40 ,  G11B2005/3996

摘要： A magnetic head with a spin valve effect MR element and a method of manufacturing the head. A plurality of spin valve effect MR elements on a substrate are formed, a plurality of pairs of lead conductors connected with the respective spin valve effect MR elements on the substrate are formed, and then a plurality of protection circuits of magnetization inversion connected between the respective pairs of lead conductors on the substrate are formed. Each of the protection circuits is constituted so as to turn on when it receives an energy with a level at which the pinned direction inversion in each of the spin valve effect MR elements occurs.

摘要翻译： 具有旋转阀效应MR元件的磁头和制造头部的方法。 在衬底上形成多个自旋阀效应MR元件，形成多个与各个自旋阀连接的引导导体，在衬底上形成MR元件，然后将多个磁化反转保护电路连接在相应的 形成基板上的导体导体对。 每个保护电路被构造成当其接收到具有在每个自旋阀效应MR元件中发生销钉方向反转的水平的能量时接通能量。

公开(公告)号：US6117568A

公开(公告)日：2000-09-12

申请号：US913167

申请日：1997-10-30

申请人： Kazuhito Hashimoto ,  Akira Fujishima ,  Osamu Sato ,  Tomokazu Iyoda

发明人： Kazuhito Hashimoto ,  Akira Fujishima ,  Osamu Sato ,  Tomokazu Iyoda

IPC分类号： C25D9/00 ,  H01F10/00 ,  H01F41/26 ,  H01F10/08

CPC分类号： H01F41/26 ,  C25D9/00 ,  H01F10/005

摘要： The invention provides a novel cyanochromium-complex-based magnetic material formed on an electrode, which is excellent in magnetic properties and of which magnetic properties are reversibly controllable, by impressing a reduction potential which electrochemically reduces Cr.sup.3+ into Cr.sup.2+ in a solution containing at least [Cr(CN).sub.6 ].sup.3- and Cr.sup.3+.

摘要翻译： PCT No.PCT / JP96 / 00577 Sec。 371 1997年10月30日第 102（e）1997年10月30日PCT 1996年3月8日PCT公布。 公开号WO96 / 28831 日期1996年9月19日本发明提供了一种形成在电极上的新颖的基于氰基铬络合物的磁性材料，其磁性能优异，磁性能可逆地控制，通过在电化学方法中减少Cr3 +的还原电位， 至少含有[Cr（CN）6] 3-和Cr3 +的溶液。

公开(公告)号：US06111782A

公开(公告)日：2000-08-29

申请号：US270647

申请日：1999-03-16

申请人： Hiroshi Sakakima ,  Yousuke Irie ,  Mitsuo Satomi ,  Yasuhiro Kawawake

发明人： Hiroshi Sakakima ,  Yousuke Irie ,  Mitsuo Satomi ,  Yasuhiro Kawawake

IPC分类号： G01R33/09 ,  G06K19/06 ,  G11B5/39 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  H01F10/08 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H03F7/02 ,  H03F15/00 ,  G11C11/00

CPC分类号： H03F7/02 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01F10/3281 ,  H01L27/222 ,  H01L43/10 ,  G11B2005/3996 ,  G11B5/3925 ,  G11C2211/5616

摘要： A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.

摘要翻译： 本发明的磁阻效应器件包括：衬底; 以及形成在基板上的多层结构。 多层结构包括硬磁膜，软磁膜和用于从硬磁膜分离硬磁膜的非磁性金属膜。 硬磁性膜的磁化曲线具有良好的正方形特征，硬磁性膜的磁化容易轴的方向基本上与要检测的磁场的方向一致。

公开(公告)号：US06063491A

公开(公告)日：2000-05-16

申请号：US38093

申请日：1998-03-11

申请人： Jun-Ichi Fujikata ,  Kazuhiko Hayashi ,  Hidefumi Yamamoto ,  Kunihiko Ishihara

发明人： Jun-Ichi Fujikata ,  Kazuhiko Hayashi ,  Hidefumi Yamamoto ,  Kunihiko Ishihara

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/18 ,  H01F10/28 ,  H01F10/32 ,  H01L43/08 ,  G11B5/66

CPC分类号： H01L43/08 ,  Y10S428/90 ,  Y10T428/1121 ,  Y10T428/26 ,  Y10T428/265

摘要： The invention provides a magnetoresistance effects film including (a) at least two thin magnetic films deposited on a substrate, (b) at least one thin nonmagnetic film interposed between the thin magnetic films, and (c) a thin antiferromagnetic film disposed adjacent to one of the thin magnetic films between which the thin nonmagnetic film is interposed. A bias magnetic field of one of the thin magnetic films induced by the thin antiferromagnetic film has an intensity Hr greater than a coercivity H.sub.C2 of the other of the thin magnetic films which is remote from the thin antiferromagnetic film (Hr>H.sub.C2). The thin antiferromagnetic film has a superlattice structure composed of at least two of NiO, Ni.sub.x Co.sub.1-x O(x=0.1-0.9) and CoO. A ratio of Ni relative to Co in the number of atoms in the superlattice structure is set equal to or greater than 1.0. The magnetoresistance effects film exhibits large linear change in resistance with the hysteresis being small even when a small external field is applied thereto.

摘要翻译： 本发明提供了一种磁电阻效应膜，其包括（a）沉积在基板上的至少两个薄磁膜，（b）介于薄磁膜之间的至少一个薄非磁性膜，（c）与一个薄的反铁磁膜 的薄磁性膜，薄的非磁性膜被插入其间。 由薄的反铁磁膜引起的薄磁膜之一的偏磁场的强度Hr大于远离薄反铁磁膜（Hr> HC2）的另一个薄磁膜的矫顽力HC2。 薄的反铁磁膜具有由NiO，NixCo1-xO（x = 0.1-0.9）和CoO中的至少两种构成的超晶格结构。 超晶格结构中的原子数相对于Co的比例设定为1.0以上。 即使施加小的外部场，磁阻效应膜也呈现大的电阻线性变化，滞后小。

公开(公告)号：US6055215A

公开(公告)日：2000-04-25

申请号：US63391

申请日：1998-04-21

申请人： Tadao Katsuragawa

发明人： Tadao Katsuragawa

IPC分类号： G02B5/30 ,  G02B1/11 ,  G02B1/113 ,  G02B1/16 ,  G02F1/09 ,  G11B5/00 ,  G11B5/39 ,  G11B5/49 ,  G11B5/64 ,  G11B5/65 ,  G11B5/73 ,  G11B5/74 ,  G11B13/04 ,  H01F10/08 ,  G11B11/00

CPC分类号： G11B5/82 ,  G02F1/09 ,  G11B5/29 ,  G11B5/4976 ,  G11B5/855 ,  G02F1/092 ,  G02F2201/38 ,  G02F2203/01 ,  G02F2203/12 ,  G11B13/045 ,  G11B2005/0002 ,  G11B5/3958

摘要： A magneto-optical device including a substrate which is transparent to light in a visible spectrum region and a plurality of ferromagnetic layers arranged thereon, each ferromagnetic layer preferably having a width ranging from 5 to 100 nanometers and a thickness ranging from 0.1 to 5 microns. The ferromagnetic layers are parallel to each other and separated by a distance ranging from 0.2 to 2 microns. The ferromagnetic layers are arranged preferably on the side walls of grooves formed parallel to each other in the transparent substrate.

摘要翻译： 一种磁光装置，其包括对可见光谱区域中的光透明的衬底和布置在其上的多个铁磁层，每个铁磁层优选地具有5至100纳米的宽度和0.1至5微米的厚度。 铁磁层彼此平行并分开0.2至2微米的距离。 铁磁层优选地布置在透明基板中彼此平行形成的槽的侧壁上。

公开(公告)号：US5997698A

公开(公告)日：1999-12-07

申请号：US933138

申请日：1997-09-18

申请人： Tetsuya Mino ,  Yasufumi Uno

发明人： Tetsuya Mino ,  Yasufumi Uno

IPC分类号： G11B5/31 ,  C23C14/00 ,  C23C14/06 ,  C23C14/50 ,  C23C14/58 ,  G11B5/127 ,  G11B5/39 ,  H01F10/08 ,  H01F10/14 ,  H01F10/32 ,  H01F41/18 ,  H01L43/12 ,  C23C14/34

CPC分类号： C23C14/5806 ,  C23C14/0036 ,  C23C14/0641 ,  C23C14/505 ,  H01F10/147

摘要： An Fe--Zr--N base thin film composed of a metal nitride is formed by reactive sputtering. At the reactive sputtering step, the stress of the thin film is controlled by causing relative movement of the substrate with respect to a target in such a manner that the substrate can be periodically opposite to the target, or applying a negative bias voltage to the substrate, or performing said relative movement of the substrate with the application of the negative bias voltage to the substrate.

摘要翻译： 通过反应溅射形成由金属氮化物构成的Fe-Zr-N基薄膜。 在反应溅射步骤中，通过使基板相对于目标物的相对移动以使得基板可以周期性地与靶相反的方式或向基板施加负偏压来控制薄膜的应力 或者通过将负偏置电压施加到衬底来执行衬底的所述相对运动。

公开(公告)号：US5955211A

公开(公告)日：1999-09-21

申请号：US890508

申请日：1997-07-09

申请人： Atsushi Maeda ,  Satoru Oikawa

发明人： Atsushi Maeda ,  Satoru Oikawa

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/12 ,  H01F10/13 ,  H01F10/18 ,  H01F10/187 ,  H01F10/32 ,  H01L43/08 ,  G11B5/66

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/3204 ,  H01F10/3268 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10T428/1121

摘要： Disclosed is a magnetoresistive film which includes an antiferromagnetic layer, a first amorphous ferromagnetic layer, a crystalline ferromagnetic interlayer disposed between the antiferromagnetic layer and the first amorphous ferromagnetic layer, a nonmagnetic conductive layer provided on the first amorphous ferromagnetic layer and a ferromagnetic layer provided on the nonmagnetic conductive layer.

摘要翻译： 公开了一种磁阻膜，其包括反铁磁层，第一非晶铁磁层，设置在反铁磁层和第一非晶铁磁层之间的结晶铁磁中间层，设置在第一非晶铁磁层上的非磁性导电层和设置在第一非铁磁性层上的铁磁层 非磁性导电层。