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公开(公告)号：US20160362580A1
公开(公告)日：2016-12-15
申请号：US15120936
申请日：2015-02-27
发明人： Ralf GROTTENMÜLLER , Rosalin KARUNANANDAN , Fumio KITA , Helmut LENZ , Dieter WAGNER , Andreas DRESEL
IPC分类号： C09D183/16 , C08G77/62 , C08J3/24 , H01L33/56 , C09D7/12
CPC分类号： C09D183/16 , C08G77/62 , C08G2190/00 , C08J3/247 , C08J2383/16 , C08K3/013 , C08K3/22 , C08K3/36 , C08K9/04 , C08K9/06 , C08K2003/2241 , C08K2003/2244 , C08K2201/003 , C08K2201/011 , C09D7/62 , C09D7/67 , H01L33/52 , H01L33/56 , H01L2933/005 , C08L83/16 , C08K3/0033
摘要： A hybrid material for light emitting diodes, comprising a) an organopolysilazane material, comprising repeating units of formulae (I) and (II) [—SiR1R2—NR3—]x (I) [—SiHR4—NR5—]y (II) wherein the symbols and indices have the following meanings: R1 is C2-C6-alkenyl or C4-C6-alkadienyl; R2 is H or an organic group; R3 is H or an organic group; R4 is H or an organic group; R5 is H or an organic group; x is 0.001 to 0.2; and y is 2x to (1−x), with the proviso that x+y≦1 and that y can be 0 if R2 is H, and b) inorganic nanoparticles having a mean diameter in the range of from 1 to 30 nm, which are surface modified with a capping agent comprising a C1-C18-alkyl and/or C1-C18-alkenyl group, is useful as encapsulation material for LEDs.
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公开(公告)号：US09505721B2
公开(公告)日：2016-11-29
申请号：US14439477
申请日：2013-10-28
发明人： Eri Hirahara , Ralph Dammel , Georg Pawlowski
IPC分类号： C07D471/12 , C07D221/14 , C07D409/06 , C07D401/12 , C07D403/04 , C07D405/04 , C07D409/04 , C07D409/12 , G03F7/004
CPC分类号： C07D221/14 , C07D401/12 , C07D403/04 , C07D405/04 , C07D409/04 , C07D409/06 , C07D409/12 , C07D471/12 , G03F7/004 , G03F7/0045 , G03F7/0046
摘要： [Problem] to provide an aromatic imide compound wherein the sensitivity for visible light such as g-line, h-line etc. is increased and solubility is also improved.[Means for solving problem] The aromatic imide compound of the invention is a compound represented by the formula (1) below (in the formula, R1 represents a haloalkyl group having 1 to 7 carbon atoms or a haloaryl group, R2 represents a group containing a substituted or unsubstituted, aliphatic or aromatic group which may have a heteroatom, and adjacent R2s may form an imido group by connecting each other, R3 represent a halogen atom or a hydrocarbon group, m is zero or an integer of 1 or more, n is zero or an integer of 1 or more, and a sum of n and m is 1 to 6). These compounds are obtained by following processes. A halogenated naphtharic anhydride is reacted with an aromatic group-containing hydrocarbon such as ethynylbenzene to prepare a naphthalic anhydride substituted by an aromatic group-containing group. The obtained compound is then reacted with hydroxylamine hydrochloride to be made N-hydoxyimidization. Finally, the resultant compound is reacted with a sulfonyl halide such as trifluoromethylsulfonyl chloride to obtain the objective compound.
摘要翻译： [解决问题的方法]本发明的芳香族酰亚胺化合物是下述式（1）表示的化合物（式中，R1表示碳原子数1〜7的卤代烷基或卤代芳基，R2表示含有 可以具有杂原子的取代或未取代的脂族或芳族基团，相邻的R 2可以通过彼此连接形成亚氨基，R 3表示卤素原子或烃基，m为0或1以上的整数，n 为0或1以上的整数，n和m的和为1〜6）。 这些化合物通过以下方法获得。 将卤代的石脑油酸酐与含芳基的烃如乙炔基苯反应以制备被含芳族基团取代的萘二甲酸酐。 然后将得到的化合物与盐酸羟胺反应，进行N-羟基亚氨基化。 最后，将所得化合物与磺酰卤例如三氟甲基磺酰氯反应，得到目标化合物。
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63.发明申请METAL HARDMASK COMPOSITION AND PROCESSES FOR FORMING FINE PATTERNS ON SEMICONDUCTOR SUBSTRATES 有权用于在半导体基板上形成精细图案的金属HARDMASK组合物和工艺公开(公告)号：US20160230019A1
公开(公告)日：2016-08-11
申请号：US14619603
申请日：2015-02-11
IPC分类号： C09D5/00 , G03F7/11 , H01L21/02 , H01L21/308 , H01L21/311
CPC分类号： C09D5/006 , G03F7/11 , H01L21/02142 , H01L21/02172 , H01L21/02175 , H01L21/02282 , H01L21/3081 , H01L21/3086 , H01L21/31133 , H01L21/31138
摘要： The present invention relates to a novel composition with improved stability containing soluble, multi-ligand-substituted metal compound, a polyol compound and a solvent useful for filling material on photoresist patterns with good trench or via filling properties of microlithographic features, where the filled patterns having good plasma etch resistance in oxygen based plasmas and are used as a hard mask in forming fine patterns on semiconductor substrates by pattern transfer of this hard mask. The present invention further relates to using the novel composition in methods for manufacturing electronic devices.
摘要翻译： 本发明涉及具有改进稳定性的新型组合物，其含有可溶性，多配位体取代的金属化合物，多元醇化合物和可用于在光刻胶图案上填充材料的溶剂，具有良好的沟槽或通过微光刻特征的通孔填充特性，其中填充图案 在氧基等离子体中具有良好的等离子体蚀刻电阻，并且用作通过该硬掩模的图案转印在半导体衬底上形成精细图案的硬掩模。 本发明还涉及在制造电子器件的方法中使用该组合物。
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64.发明申请DEFECT REDUCTION METHODS AND COMPOSITION FOR VIA FORMATION IN DIRECTED SELF-ASSEMBLY PATTERNING 审中-公开通过指导自组装方式形成的缺陷减少方法和组合公开(公告)号：US20160122580A1
公开(公告)日：2016-05-05
申请号：US14527962
申请日：2014-10-30
发明人： SungEun HONG , Naoki MATSUMOTO , Yasushi AKIYAMA , Kazunori KUROSAWA , Shinji MIYAZAKI , Guanyang LIN
IPC分类号： C09D153/00 , H01J37/32
CPC分类号： C09D153/00 , B81C1/00031 , B81C1/00396 , B81C2201/0149 , H01J37/32009 , H01L21/3081
摘要： The present invention relates to a two novel processes, “Dual Coating Process and Single Coating Process,” for forming an array of via's by employing a graphoepitaxy approach, where an array of pillars the surface of the pillars has been modified by the formation of a hydrophobic poly(vinyl aryl) brush at the surface of the pillars. The present invention also relates to a composition comprising a poly(vinyl aryl) hydrophopic polymer brush precursor terminated at one chain end with a reactive functional group, a diblock copolymer comprising an etch resistant hydrophobic block and a highly etchable hydrophilic block, a thermal acid generator and a solvent.
摘要翻译： 本发明涉及两种新型工艺：“双重涂布工艺和单一涂覆工艺”，用于通过采用石墨刻蚀方法形成通孔阵列，其中支柱的表面阵列已经通过形成 疏水性聚（乙烯基芳基）刷在柱的表面。 本发明还涉及一种组合物，其包含在一个末端用反应性官能团封端的聚（乙烯基芳基）水薰衣草聚合物刷子前体，包含耐蚀刻疏水嵌段的二嵌段共聚物和高度可蚀刻的亲水性嵌段，热酸产生剂 和溶剂。
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公开(公告)号：US11506978B2
公开(公告)日：2022-11-22
申请号：US16089021
申请日：2017-03-27
IPC分类号： G03F7/075 , C08F230/08 , C08G77/14 , C08G77/20 , G03F7/00 , G03F7/031 , G03F7/32 , G03F7/40 , G03F7/16 , G03F7/20
摘要： [Object] To provide a negative type photosensitive composition developable with a low concentration alkali developer and capable of forming a cured film excellent in transparency, in chemical resistance and in environmental durability; and further to provide a pattern-formation method employing the composition. [Means] The present invention provides a negative type photosensitive composition comprising: (I) an alkali-soluble resin, namely, a polymer comprising a carboxyl-containing polymerization unit and an alkoxysilyl-containing polymerization unit, (II) a polysiloxane, (III) a compound having two or more (meth)acryloyloxy groups, (IV) (i) a silicone derivative having a particular structure and/or (ii) a compound having two or more epoxy groups, (V) a polymerization initiator, and (VI) a solvent.
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公开(公告)号：US11079680B2
公开(公告)日：2021-08-03
申请号：US15773029
申请日：2016-11-02
摘要： [Problem] To provide a high heat resistance resist composition and a pattern formation method using the composition.
[Solution] The present invention provides a chemically amplified negative-type resist composition comprising a particular polymer and a particular crosslinking agent, and this composition makes it possible to form a resist pattern of high sensitivity, of excellent resolution and of strong heat-resistance.-
67.发明申请公开(公告)号：US20200319556A1
公开(公告)日：2020-10-08
申请号：US16303813
申请日：2017-05-29
发明人： Xiaowei Wang , Tatsuro NAGAHARA
摘要： [Subject] There is provided a gap filling composition which can reduce pattern collapse and a pattern forming method using the composition. [Solution means] There is provided a gap filling composition including a polymer having a certain structure and an organic solvent. There is provided a pattern forming method using a certain polymer.
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公开(公告)号：US10656522B2
公开(公告)日：2020-05-19
申请号：US15775661
申请日：2016-11-02
发明人： Xiaowei Wang
IPC分类号： G03F7/11 , G03F7/40 , C09D139/04 , C09D139/08 , G03F7/038 , G03F7/16
摘要： The present invention relates to a shrink material composition for fattening a resist pattern prepared from a negative-tone lithography process, comprising at least one polymer and at least one organic solvent, wherein the at least one polymer comprises at least one structural unit of a nitrogen heteroaromatic ring system.
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公开(公告)号：US10409161B2
公开(公告)日：2019-09-10
申请号：US16078767
申请日：2017-01-20
摘要： To provide a positive type photosensitive composition capable of forming a pattern of high resolution, of high heat resistance and of high transparency without emitting harmful volatile substances such as benzene, also capable of reducing pattern defects caused by development residues, by undissolved residues, or by reattached hardly-soluble trace left in pattern formation, and further capable of being excellent in storage stability. The present invention provides a positive type photosensitive siloxane composition comprising: a polysiloxane having a phenyl group, a diazonaphthoquinone derivative, a hydrate or solvate of a photo base-generator having a particular nitrogen-containing hetero-cyclic structure, and an organic solvent.
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公开(公告)号：US20190171107A1
公开(公告)日：2019-06-06
申请号：US16324299
申请日：2017-08-02
IPC分类号： G03F7/09 , C09D133/14 , C09D125/18
摘要： [Problem to be Solved] To provide a bottom antireflective coating forming composition which can show high etching resistance and can be crosslinked even at a relatively low temperature. Further, to provide a resist pattern manufacturing method and a device manufacturing method using the same. [Solution] The bottom antireflective coating forming composition comprises: a polymer A comprising specific repeating units; a low molecular crosslinking agent having a molecular weight of 1 00 to 3,000; and a solvent. The resist pattern manufacturing method and the device manufacturing method using the same are also provided.
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